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LV51138T

Onsemi

LV51138T by Onsemi

LV51138T by Onsemi is a Power Management IC with 8 terminals in a small outline, thin profile package. It operates b/w -30 °C to 85°C and features CMOS technology. Ideal for power supply support circuits, this IC is surface mountable and has a terminal pitch of 0.65mm.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,546 parts In-Stock

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Vyrian

USA . 1,225 parts In-Stock

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1,225

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TANS Electronics

Latvia . 5,157 parts In-Stock

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5,157

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SupplyDigital Components

Austria . 4,066 parts In-Stock

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Problanco Electronics

Mexico . 2,837 parts In-Stock

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Kulean Microsystems

USA . 2,084 parts In-Stock

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UHIMA Technologies

Türkiye . 949 parts In-Stock

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949

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Corphita

USA . 234 parts In-Stock

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Corohmni

South Africa . 217 parts In-Stock

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Overview

Experience the power of innovation with the LV51138T by Onsemi, a cutting-edge Power Management IC that boasts unrivaled quality and reliability. Manufactured by the trusted name in semiconductor technology, this product offers exceptional performance and efficiency for a wide range of applications. From power supply support circuits to voltage regulation, the LV51138T delivers superior functionality in a compact and durable package. Trust Onsemi to provide you with the tools you need to take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the IC, ensuring reliability in various operating conditions.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly, saving time and cost during manufacturing.

Package Shape: SQUARE

The square shape allows for efficient use of PCB space and enables easier placement and routing of the IC during assembly.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this IC can reliably function in demanding applications without overheating or performance degradation.

Minimum Operating Temperature: -30 °C

The wide temperature range allows for operation in both extreme cold and hot environments, making it versatile for various applications.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, resulting in efficient performance and reduced power consumption for the device.

Technical Specifications

Power Management ICs LV51138T attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

Additional Features:

CHARGE AND DISCHARGE DETECTION VOLTAGE IS 4.21 AND 2.3V

Adjustable Threshold:

NO

JESD-30 Code:

S-PDSO-G8

Length:

3 mm

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-30 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Maximum Seated Height:

1.1 mm

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Width (mm):

3 mm

Trade Compliance

LV51138T Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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