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LV51130T-TLM-E

Onsemi

LV51130T-TLM-E by Onsemi

LV51130T-TLM-E by Onsemi is a Power Management IC with 1.5/10V power supplies, 8 terminals, and -30 to 85 °C operating temperature range. It is used in applications requiring small outline, thin profile packages for CMOS technology-based power supply solutions.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Flip Electronics

USA . 8,540 parts In-Stock

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Vyrian

USA . 5,386 parts In-Stock

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Digiode

USA . 2,367 parts In-Stock

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Advanced Electronics

New Zealand . 5,000 parts In-Stock

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$17.850

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$16.244

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$14.637

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$17.850

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AZTECH Wire

Italy . 872 parts In-Stock

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$19.210

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Component Stockers USA

USA . 609 parts In-Stock

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$99.990

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609

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Authorized Procurement Solutions

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Metaverse IC Inc.

Canada . 16,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 13,825 parts In-Stock

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Kepictronics

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Microchip USA

USA . 7,459 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,239 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,159 parts In-Stock

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Problanco Electronics

Mexico . 2,108 parts In-Stock

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Corphita

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TANS Electronics

Latvia . 1,294 parts In-Stock

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SupplyDigital Components

Austria . 1,271 parts In-Stock

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Kulean Microsystems

USA . 1,024 parts In-Stock

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UHIMA Technologies

Türkiye . 532 parts In-Stock

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Corohmni

South Africa . 434 parts In-Stock

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Overview

Elevate your power management capabilities with the LV51130T-TLM-E by Onsemi. Crafted with precision and reliability in mind, this Power Management IC offers unparalleled performance for a wide range of applications. From industrial automation to consumer electronics, this product delivers exceptional value and efficiency, ensuring optimal power supply for your devices. Trust Onsemi's expertise and quality craftsmanship to take your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good protection for the internal components of the IC, ensuring durability and longevity.

Surface Mount: YES

Easier and more convenient to install on PCBs, saving time and effort.

Package Shape: RECTANGULAR

Efficient use of space on the PCB, allowing for a more compact design.

Power Supplies (V): 1.5/10

Supports a wide range of power supply voltages, making it versatile for different applications.

No. of Terminals: 8

Provides multiple connection points for interfacing with other components, increasing flexibility in circuit design.

Maximum Operating Temperature: 85 °C

Can operate in high temperature environments without overheating, ensuring reliable performance.

Moisture Sensitivity Level (MSL): 3

Can withstand moderate levels of moisture exposure, making it suitable for a variety of environmental conditions.

Technical Specifications

Power Management ICs LV51130T-TLM-E attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

3

No. of Terminals:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-30 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP8,.19

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.5/10

Qualification:

Not Qualified

Sub-Category:

Power Management Circuits

Maximum Supply Current (Isup):

.013 mA

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN BISMUTH

Terminal Form:

GULL WING

Terminal Pitch:

.635 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

LV51130T-TLM-E Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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