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KSD1408

Onsemi

KSD1408 by Onsemi

The Onsemi KSD1408 is a NPN BJT transistor with 80V VCE, 4A IC, and 15 hFE. Ideal for amplifier applications, it has a silicon element, rectangular package shape, and flange mount style. With 3 terminals in through-hole form, it offers an isolated case connection and 8MHz fT.

Median Price

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Lifecycle Status

Suppliers In-Stock

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In-Stock Inventory

1k+

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Digiode

USA . 2,556 parts In-Stock

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Vyrian

USA . 2,422 parts In-Stock

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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A-Z Elektronik GmbH

Germany . 4,502 parts In-Stock

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Kulean Microsystems

USA . 4,298 parts In-Stock

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TANS Electronics

Latvia . 3,887 parts In-Stock

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Problanco Electronics

Mexico . 3,269 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,001 parts In-Stock

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SupplyDigital Components

Austria . 2,967 parts In-Stock

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Supply Digital

USA . 2,889 parts In-Stock

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Corphita

USA . 1,731 parts In-Stock

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Corohmni

South Africa . 311 parts In-Stock

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UHIMA Technologies

Türkiye . 122 parts In-Stock

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Overview

Unleash the power of innovation with the Onsemi KSD1408 Power Bipolar Junction Transistor. Crafted with precision and expertise by Onsemi, this NPN transistor is designed to amplify with unparalleled efficiency. Whether you're working on audio amplifiers, switch mode power supplies, or motor control applications, the KSD1408 delivers reliable performance and unmatched quality. Elevate your projects with the KSD1408 - where excellence meets innovation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good protection for the transistor while also keeping it lightweight and cost-effective.

Polarity or Channel Type: NPN

NPN type transistors are commonly used in amplification circuits, making this transistor suitable for amplifier applications.

Configuration: SINGLE

Simplified design and easy to use in circuits that require a single transistor.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in such circuits.

Package Shape: RECTANGULAR

Typically easier to mount and solder onto circuit boards compared to other package shapes.

Terminal Form: THROUGH-HOLE

Easily mounted onto circuit boards and provides a secure connection for reliable performance.

No. of Terminals: 3

Simplified connectivity with fewer terminals, making it easier to incorporate into circuit designs.

Package Style (Meter): FLANGE MOUNT

Flange mount style provides a stable and secure mounting option for the transistor.

Minimum DC Current Gain (hFE): 15

Higher current gain ensures efficient amplification of the input signal.

Maximum Collector-Emitter Voltage: 80 V

Allows for higher voltage applications without damaging the transistor.

Transistor Element Material: SILICON

Silicon transistors offer high performance, reliability, and efficiency in electronic circuits.

Maximum Collector Current (IC): 4 A

Can handle high current loads, making it suitable for various amplifier applications.

Terminal Position: SINGLE

Simplified wiring and connectivity with a single terminal position.

Case Connection: ISOLATED

Provides electrical isolation for added safety and protection in the circuit.

Nominal Transition Frequency (fT): 8 MHz

Higher transition frequency allows for faster switching speeds in amplification circuits.

Technical Specifications

Power Bipolar Junction Transistors (BJT) KSD1408 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

15

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

KSD1408 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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