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KSD1691G

Onsemi

KSD1691G by Onsemi

KSD1691G by Onsemi is a NPN Power BJT with hFE of 200, VCE of 60V, and IC of 5A. Ideal for applications requiring high current amplification in a single configuration. Suitable for power control circuits due to its silicon transistor element material and through-hole terminal form.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,841 parts In-Stock

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Digiode

USA . 935 parts In-Stock

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Kulean Microsystems

USA . 7,352 parts In-Stock

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TANS Electronics

Latvia . 5,468 parts In-Stock

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Problanco Electronics

Mexico . 4,023 parts In-Stock

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Corphita

USA . 2,052 parts In-Stock

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Supply Digital

USA . 1,357 parts In-Stock

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SupplyDigital Components

Austria . 1,148 parts In-Stock

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UHIMA Technologies

Türkiye . 446 parts In-Stock

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Corohmni

South Africa . 107 parts In-Stock

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Overview

Unlock the potential of your electronic projects with the KSD1691G by Onsemi. As a leading manufacturer in power bipolar junction transistors, Onsemi delivers superior quality and reliability. This NPN transistor offers a DC current gain of 200 and a maximum collector-emitter voltage of 60V, making it ideal for a wide range of applications. Whether you're working on amplifiers, switching circuits, or voltage regulators, this versatile transistor provides the performance and efficiency you need. Trust Onsemi to bring innovation and value to your designs with the KSD1691G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides good insulation properties and is cost-effective for mass production.

Polarity or Channel Type: NPN

NPN transistors are commonly used and are easy to integrate into circuit designs.

Configuration: SINGLE

Single configuration transistors are straightforward to use and suitable for various applications.

Package Shape: RECTANGULAR

Rectangular shape allows for easy placement and mounting in circuit boards, maximizing space efficiency.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong mechanical connections and are ideal for soldering onto PCBs.

No. of Terminals: 3

Three terminals allow for easy connections in circuits while providing necessary functionality.

Package Style (Meter): FLANGE MOUNT

Flange mount style offers stability in mounting and ease of installation in applications.

Minimum DC Current Gain (hFE): 200

High minimum DC current gain ensures amplification of signals with minimal input power.

Maximum Collector-Emitter Voltage: 60 V

High collector-emitter voltage rating allows for handling moderate power applications effectively.

Transistor Element Material: SILICON

Silicon material provides reliable performance and stability in a wide range of operating conditions.

Maximum Collector Current (IC): 5 A

High collector current rating enables the transistor to handle larger currents without overheating.

Terminal Position: SINGLE

Single terminal position simplifies installation and connections in circuits.

Technical Specifications

Power Bipolar Junction Transistors (BJT) KSD1691G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

200

JEDEC-95 Code:

TO-126

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Element Material:

SILICON

Trade Compliance

KSD1691G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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