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KSD1691YS

Onsemi

KSD1691YS by Onsemi

KSD1691YS by Onsemi is a NPN Power BJT with 20W power dissipation, hFE of 160, and 60V max collector-emitter voltage. Ideal for applications requiring up to 5A collector current, such as power amplifiers and motor control circuits.

Median Price

$0.712

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 2,321 parts In-Stock

1+ parts

$1.110

100+ parts

$0.456

1k+ parts

$0.326

10k+ parts

$0.266

2,321

$1.110

$0.456

$0.326

$0.266

DigiKey

USA . 414 parts In-Stock

1+ parts

$1.110

100+ parts

$0.456

1k+ parts

$0.319

10k+ parts

$0.243

414

$1.110

$0.456

$0.319

$0.243

Rochester

USA . 34,479 parts In-Stock

1+ parts

-

100+ parts

$0.315

1k+ parts

$0.262

10k+ parts

$0.233

34,479

-

$0.315

$0.262

$0.233

Verical

USA . 33,240 parts In-Stock

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-

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$0.291

33,240

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$0.291

Flip Electronics (Authorized)

USA . 4,100 parts In-Stock

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4,100

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Distributors (In-Stock)

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Digiode

USA . 594 parts In-Stock

1+ parts

$0.245

100+ parts

-

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594

$0.245

-

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Nova Conductors

Japan . 72 parts In-Stock

1+ parts

$0.338

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72

$0.338

-

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Vyrian

USA . 14,916 parts In-Stock

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14,916

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Flip Electronics

USA . 6,100 parts In-Stock

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Prism Electronics

USA . 225 parts In-Stock

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225

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Distributors (Availability)

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Semicontronic

India . 14,994 parts In-Stock

1+ parts

$0.219

100+ parts

$0.214

1k+ parts

$0.212

10k+ parts

-

14,994

$0.219

$0.214

$0.212

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Ampacity Inc.

Singapore . 14,843 parts In-Stock

1+ parts

$0.219

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-

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14,843

$0.219

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Corphita

USA . 689 parts In-Stock

1+ parts

$0.232

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-

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689

$0.232

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Corohmni

South Africa . 478 parts In-Stock

1+ parts

$0.258

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478

$0.258

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Argo Parts USA

USA . 852 parts In-Stock

1+ parts

$0.338

100+ parts

-

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$0.327

852

$0.338

-

-

$0.327

Continental Prestige Electronics

USA . 326 parts In-Stock

1+ parts

$0.338

100+ parts

-

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$0.331

326

$0.338

-

-

$0.331

Component Stockers USA

USA . 676 parts In-Stock

1+ parts

$0.680

100+ parts

$0.410

1k+ parts

$0.290

10k+ parts

-

676

$0.680

$0.410

$0.290

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Microchip USA

USA . 7,360 parts In-Stock

1+ parts

$5.070

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7,360

$5.070

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QUARKTWIN TECHNOLOGY LTD

USA . 9,702 parts In-Stock

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9,702

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A-Z Elektronik GmbH

Germany . 7,626 parts In-Stock

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7,626

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Problanco Electronics

Mexico . 5,136 parts In-Stock

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Perfect Parts

USA . 4,480 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,417 parts In-Stock

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Kepictronics

USA . 4,000 parts In-Stock

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TANS Electronics

Latvia . 2,992 parts In-Stock

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Kulean Microsystems

USA . 2,945 parts In-Stock

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Supply Digital

USA . 2,863 parts In-Stock

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2,863

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SupplyDigital Components

Austria . 2,654 parts In-Stock

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2,654

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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UHIMA Technologies

Türkiye . 123 parts In-Stock

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123

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Overview

Upgrade your power management systems with the KSD1691YS by Onsemi. Manufactured to the highest quality standards, this NPN Power BJT offers unparalleled performance and reliability for a wide range of applications. From industrial machinery to automotive electronics, this transistor is designed to handle up to 5A of current with ease. Say goodbye to overheating issues with its impressive 20W power dissipation capacity. Trust Onsemi's expertise in semiconductor manufacturing to deliver the value and benefits you need for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring durability and reliability in various environments.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making this product versatile for different applications.

Configuration: SINGLE

Simplified design with single configuration for easy integration into circuits.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient utilization of space on circuit boards.

Terminal Form: THROUGH-HOLE

Through-hole terminals are easy to solder and provide secure connections for stable performance.

Maximum Power Dissipation (Abs): 20 W

High power dissipation capability allows the transistor to handle large amounts of power without overheating.

Package Style (Meter): FLANGE MOUNT

Flange mount package style provides mechanical support and facilitates easy mounting on heat sinks.

Minimum DC Current Gain (hFE): 160

High minimum DC current gain ensures consistent amplification performance in various circuits.

Maximum Operating Temperature: 150 °C

Handles high temperature environments effectively, ensuring stable operation under challenging conditions.

Maximum Collector-Emitter Voltage: 60 V

Suitable for applications requiring voltage handling capabilities up to 60V.

Transistor Element Material: SILICON

Silicon is a widely used semiconductor material known for its reliability and efficiency in transistor applications.

Maximum Collector Current (IC): 5 A

Capable of handling high collector currents for applications requiring higher power levels.

Terminal Finish: Matte Tin (Sn) - annealed

Matte tin finish provides good conductivity and corrosion resistance, ensuring long-term reliability of connections.

Terminal Position: SINGLE

Single terminal position simplifies circuit design and PCB layout, making integration easier.

Technical Specifications

Power Bipolar Junction Transistors (BJT) KSD1691YS attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

160

JEDEC-95 Code:

TO-126

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Element Material:

SILICON

Trade Compliance

KSD1691YS Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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