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KSD1691GS

Onsemi

KSD1691GS by Onsemi

KSD1691GS by Onsemi is a NPN Power BJT with 20W power dissipation, hFE of 200, and 60V max collector-emitter voltage. Ideal for applications requiring high current amplification in a single configuration. Suitable for use in various electronic devices due to its robust design and temperature tolerance up to 150°C.

Median Price

$1.121

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 40 parts In-Stock

1+ parts

$1.121

100+ parts

$1.020

1k+ parts

$0.919

10k+ parts

-

40

$1.121

$1.020

$0.919

-

Mouser Electronics

USA . 1,354 parts In-Stock

1+ parts

$1.560

100+ parts

$0.660

1k+ parts

$0.473

10k+ parts

-

1,354

$1.560

$0.660

$0.473

-

DigiKey

USA . 1,056 parts In-Stock

1+ parts

$1.640

100+ parts

$0.690

1k+ parts

$0.494

10k+ parts

-

1,056

$1.640

$0.690

$0.494

-

Flip Electronics (Authorized)

USA . 22,537 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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22,537

-

-

-

-

Rochester

USA . 1,835 parts In-Stock

1+ parts

-

100+ parts

$0.498

1k+ parts

$0.413

10k+ parts

$0.368

1,835

-

$0.498

$0.413

$0.368

Verical

USA . 1,471 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.517

10k+ parts

$0.461

1,471

-

-

$0.517

$0.461

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 31 parts In-Stock

1+ parts

$0.366

100+ parts

-

1k+ parts

-

10k+ parts

-

31

$0.366

-

-

-

Digiode

USA . 1,043 parts In-Stock

1+ parts

$0.388

100+ parts

-

1k+ parts

-

10k+ parts

-

1,043

$0.388

-

-

-

TME

Poland . 1,936 parts In-Stock

1+ parts

$1.540

100+ parts

$0.658

1k+ parts

$0.502

10k+ parts

-

1,936

$1.540

$0.658

$0.502

-

DigiKey Marketplace

USA . 20,537 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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20,537

-

-

-

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Flip Electronics

USA . 11,974 parts In-Stock

1+ parts

-

100+ parts

-

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11,974

-

-

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J2 Sourcing AB

Sweden . 11,890 parts In-Stock

1+ parts

-

100+ parts

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11,890

-

-

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Vyrian

USA . 5,103 parts In-Stock

1+ parts

-

100+ parts

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5,103

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-

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ComSIT Distribution GmbH

Germany . 3,400 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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3,400

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 5,205 parts In-Stock

1+ parts

$0.347

100+ parts

$0.338

1k+ parts

$0.337

10k+ parts

-

5,205

$0.347

$0.338

$0.337

-

Ampacity Inc.

Singapore . 5,163 parts In-Stock

1+ parts

$0.347

100+ parts

-

1k+ parts

-

10k+ parts

-

5,163

$0.347

-

-

-

Corohmni

South Africa . 301 parts In-Stock

1+ parts

$0.359

100+ parts

-

1k+ parts

-

10k+ parts

-

301

$0.359

-

-

-

Argo Parts USA

USA . 4,451 parts In-Stock

1+ parts

$0.366

100+ parts

-

1k+ parts

-

10k+ parts

$0.355

4,451

$0.366

-

-

$0.355

Netroflash

USA . 500 parts In-Stock

1+ parts

$0.366

100+ parts

$0.359

1k+ parts

-

10k+ parts

-

500

$0.366

$0.359

-

-

Continental Prestige Electronics

USA . 65 parts In-Stock

1+ parts

$0.366

100+ parts

-

1k+ parts

-

10k+ parts

$0.359

65

$0.366

-

-

$0.359

Corphita

USA . 2,546 parts In-Stock

1+ parts

$0.367

100+ parts

-

1k+ parts

-

10k+ parts

-

2,546

$0.367

-

-

-

Advanced Electronics

New Zealand . 40 parts In-Stock

1+ parts

$1.121

100+ parts

$1.020

1k+ parts

$0.919

10k+ parts

-

40

$1.121

$1.020

$0.919

-

Infinite Electronics LLP (Excess)

. 11,194 parts In-Stock

1+ parts

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11,194

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Perfect Parts

USA . 9,060 parts In-Stock

1+ parts

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9,060

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A-Z Elektronik GmbH

Germany . 6,744 parts In-Stock

1+ parts

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100+ parts

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6,744

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TANS Electronics

Latvia . 6,741 parts In-Stock

1+ parts

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6,741

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SupplyDigital Components

Austria . 4,938 parts In-Stock

1+ parts

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4,938

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Alle Elektronik GmbH

Germany . 4,496 parts In-Stock

1+ parts

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4,496

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Kulean Microsystems

USA . 3,744 parts In-Stock

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3,744

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Glotronic Ltd.

UK . 1,800 parts In-Stock

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1,800

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-

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Problanco Electronics

Mexico . 1,330 parts In-Stock

1+ parts

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1,330

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Authorized Procurement Solutions

USA . 500 parts In-Stock

1+ parts

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500

-

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Supply Digital

USA . 135 parts In-Stock

1+ parts

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100+ parts

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135

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UHIMA Technologies

Türkiye . 45 parts In-Stock

1+ parts

-

100+ parts

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45

-

-

-

-

Overview

Unlock the power of innovation with the KSD1691GS by Onsemi, a top-tier manufacturer known for delivering superior quality in the realm of Power Bipolar Junction Transistors. Ideal for a wide range of applications, this NPN transistor offers unparalleled performance and reliability. With a maximum operating temperature of 150°C and a maximum collector-emitter voltage of 60V, this product ensures optimal functionality in any scenario. Experience the value and benefits of cutting-edge technology with the KSD1691GS, providing customers with a competitive edge in their projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material for the package body provides good insulation properties and ensures durability and reliability in various operating conditions.

Polarity or Channel Type: NPN

NPN polarity allows for easy integration into circuits and provides efficient amplification and switching capabilities.

Configuration: SINGLE

Single configuration simplifies circuit design and ensures straightforward operation.

Package Shape: RECTANGULAR

Rectangular package shape allows for easy mounting and space-saving integration in electronic systems.

Terminal Form: THROUGH-HOLE

Through-hole terminal form provides secure connections and ease of soldering in PCB assembly.

Maximum Power Dissipation (Abs): 20 W

High power dissipation capability of 20 W enables reliable performance in demanding applications.

Package Style (Meter): FLANGE MOUNT

Flange mount package style offers mechanical stability and facilitates heat dissipation for improved thermal management.

Minimum DC Current Gain (hFE): 200

High minimum DC current gain of 200 ensures consistent and stable amplification of signals.

Maximum Operating Temperature: 150 °C

Wide temperature range of up to 150°C allows for reliable operation in various environmental conditions.

Maximum Collector-Emitter Voltage: 60 V

Maximum collector-emitter voltage of 60 V provides sufficient voltage handling capacity for diverse circuit applications.

Transistor Element Material: SILICON

Silicon material for the transistor element offers high performance, low noise, and reliable operation.

Maximum Collector Current (IC): 5 A

High maximum collector current of 5 A enables the transistor to handle large current loads with efficiency.

Terminal Finish: Matte Tin (Sn) - annealed

Matte Tin (Sn) terminal finish provides corrosion resistance and ensures stable and low-resistance connections.

Terminal Position: SINGLE

Single terminal position simplifies installation and connection in electronic circuits.

Technical Specifications

Power Bipolar Junction Transistors (BJT) KSD1691GS attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

200

JEDEC-95 Code:

TO-126

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Element Material:

SILICON

Trade Compliance

KSD1691GS Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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