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KSD1408O

Onsemi

KSD1408O by Onsemi

KSD1408O by Onsemi is a NPN BJT transistor with 80V VCE, 4A IC, and 8MHz fT. Ideal for amplifier applications, it has a min hFE of 70 and comes in a plastic/epoxy package with flange mount style.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,580 parts In-Stock

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Vyrian

USA . 1,562 parts In-Stock

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TANS Electronics

Latvia . 5,303 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,085 parts In-Stock

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Kulean Microsystems

USA . 4,678 parts In-Stock

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,390 parts In-Stock

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Supply Digital

USA . 1,929 parts In-Stock

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Corphita

USA . 1,901 parts In-Stock

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SupplyDigital Components

Austria . 1,579 parts In-Stock

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Problanco Electronics

Mexico . 770 parts In-Stock

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UHIMA Technologies

Türkiye . 647 parts In-Stock

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Corohmni

South Africa . 261 parts In-Stock

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Overview

Discover the unrivaled performance of the KSD1408O by Onsemi, a premium Power BJT transistor designed for high-quality amplification applications. With its superior build and cutting-edge technology, Onsemi ensures reliability and precision in every product they create. Ideal for amplifiers, this NPN transistor offers exceptional value, delivering powerful results with a maximum collector-emitter voltage of 80V and a maximum collector current of 4A. Elevate your projects with the KSD1408O and experience unparalleled performance like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and mechanical protection, making the transistor durable and reliable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits due to their high input impedance and fast switching speeds.

Configuration: SINGLE

SINGLE configuration simplifies circuit design and integration, making the transistor easy to use in various projects.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance and efficiency in amplification circuits.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and integration into circuit boards, making it convenient for assembly.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and easy soldering, making installation hassle-free.

No. of Terminals: 3

Three terminals allow for simple connections, reducing the risk of wiring errors and making the transistor user-friendly.

Package Style (Meter): FLANGE MOUNT

Flange mount style ensures stable positioning and secure attachment, preventing movement or dislodging during operation.

Minimum DC Current Gain (hFE): 70

A high minimum DC current gain ensures efficient amplification, making the transistor suitable for high-gain applications.

Maximum Collector-Emitter Voltage: 80 V

High maximum collector-emitter voltage rating allows for safe operation in circuits with higher voltage requirements.

Transistor Element Material: SILICON

Silicon is a common and reliable material for transistor elements, ensuring stable performance and long-term reliability.

Maximum Collector Current (IC): 4 A

High maximum collector current rating allows the transistor to handle large currents, making it suitable for power applications.

Terminal Position: SINGLE

Single terminal position simplifies installation and connections, reducing the chances of errors and ensuring consistent performance.

Case Connection: ISOLATED

Isolated case connection enhances safety and prevents short circuits, making the transistor a reliable choice for various applications.

Nominal Transition Frequency (fT): 8 MHz

High nominal transition frequency ensures fast response and signal switching, making the transistor suitable for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) KSD1408O attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

70

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

KSD1408O Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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