Loading...

KSD1691

Onsemi

KSD1691 by Onsemi

The Onsemi KSD1691 is a NPN BJT transistor with max. collector-emitter voltage of 60V and max. collector current of 5A. It has a min DC current gain of 50, suitable for power applications in various industries due to its single configuration and through-hole terminal form.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,108 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,108

-

-

-

-

Vyrian

USA . 767 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

767

-

-

-

-

Nova Conductors

Japan . 10 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

10

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 367 parts In-Stock

1+ parts

$12.664

100+ parts

-

1k+ parts

-

10k+ parts

-

367

$12.664

-

-

-

Semicontronic

India . 1,482 parts In-Stock

1+ parts

$65.050

100+ parts

$63.424

1k+ parts

$63.098

10k+ parts

-

1,482

$65.050

$63.424

$63.098

-

Authorized Procurement Solutions

USA . 15,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

15,000

-

-

-

-

Continental Prestige Electronics

USA . 3,888 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,888

-

-

-

-

Problanco Electronics

Mexico . 3,836 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,836

-

-

-

-

Argo Parts USA

USA . 3,380 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,380

-

-

-

-

Corphita

USA . 2,729 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,729

-

-

-

-

SupplyDigital Components

Austria . 2,393 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,393

-

-

-

-

Kulean Microsystems

USA . 2,214 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,214

-

-

-

-

Supply Digital

USA . 1,732 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,732

-

-

-

-

Bastille Electronics

Australia . 450 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

450

-

-

-

-

Corohmni

South Africa . 144 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

144

-

-

-

-

TANS Electronics

Latvia . 63 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

63

-

-

-

-

UHIMA Technologies

Türkiye . 33 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

33

-

-

-

-

Overview

Looking for a reliable power transistor for your electronic projects? Look no further than the KSD1691 by Onsemi. Known for their high-quality products, Onsemi delivers exceptional performance and durability in every component they produce. The KSD1691 is perfect for a wide range of applications, offering customers value and versatility. With a maximum collector-emitter voltage of 60V and a maximum collector current of 5A, this NPN transistor provides the power and efficiency you need. Upgrade your electronics with the KSD1691 and experience the benefits of superior quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material makes the transistor lightweight and durable, making it easy to handle and install in various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this product suitable for a wide range of applications in electronics.

Configuration: SINGLE

The single configuration simplifies the design and layout of circuits, allowing for easier integration into electronic devices.

Package Shape: RECTANGULAR

The rectangular shape makes the transistor easy to mount and secure in place, providing stability in the circuit.

Terminal Form: THROUGH-HOLE

Through-hole terminals offer a strong connection and make soldering easier, providing reliability in the circuit.

No. of Terminals: 3

Having 3 terminals allows for versatile connections in a circuit, enabling flexibility in design and functionality.

Package Style (Meter): FLANGE MOUNT

The flange mount style provides a secure attachment to a heat sink, improving heat dissipation and overall performance of the transistor.

Minimum DC Current Gain (hFE): 50

With a minimum current gain of 50, this transistor offers consistent and reliable amplification in electronic circuits.

Maximum Collector-Emitter Voltage: 60 V

The high maximum voltage rating of 60V ensures the transistor can handle a wide range of voltage fluctuations, adding to its versatility.

Transistor Element Material: SILICON

Silicon is a common and reliable material for transistors, providing high performance and durability in various operating conditions.

Maximum Collector Current (IC): 5 A

The high maximum collector current rating of 5A allows the transistor to handle larger loads, making it suitable for power applications.

Terminal Position: SINGLE

Having a single terminal position simplifies installation and ensures proper orientation in the circuit, reducing the risk of errors.

Technical Specifications

Power Bipolar Junction Transistors (BJT) KSD1691 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

50

JEDEC-95 Code:

TO-126

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Element Material:

SILICON

Trade Compliance

KSD1691 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20