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KSD1692YS

Onsemi

KSD1692YS by Onsemi

KSD1692YS by Onsemi is a power BJT transistor with NPN polarity. It has a max power dissipation of 15W and a min DC current gain of 4000. This transistor is commonly used in applications that require high collector current and voltage, such as power amplifiers and motor control circuits.

Median Price

$0.798

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 1,192 parts In-Stock

1+ parts

$1.200

100+ parts

$0.495

1k+ parts

$0.349

10k+ parts

$0.267

1,192

$1.200

$0.495

$0.349

$0.267

Mouser Electronics

USA . 914 parts In-Stock

1+ parts

$1.200

100+ parts

$0.496

1k+ parts

$0.350

10k+ parts

$0.296

914

$1.200

$0.496

$0.350

$0.296

Flip Electronics (Authorized)

USA . 30,000 parts In-Stock

1+ parts

-

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30,000

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Rochester

USA . 1,725 parts In-Stock

1+ parts

-

100+ parts

$0.351

1k+ parts

$0.292

10k+ parts

$0.260

1,725

-

$0.351

$0.292

$0.260

Verical

USA . 1,725 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.395

10k+ parts

$0.325

1,725

-

-

$0.395

$0.325

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 763 parts In-Stock

1+ parts

$0.273

100+ parts

-

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763

$0.273

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Flip Electronics

USA . 60,000 parts In-Stock

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60,000

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Vyrian

USA . 6,905 parts In-Stock

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6,905

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Nova Conductors

Japan . 100 parts In-Stock

1+ parts

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100

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Distributors (Availability)

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Ampacity Inc.

Singapore . 6,974 parts In-Stock

1+ parts

$0.244

100+ parts

-

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6,974

$0.244

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Corphita

USA . 1,630 parts In-Stock

1+ parts

$0.258

100+ parts

-

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1,630

$0.258

-

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Corohmni

South Africa . 471 parts In-Stock

1+ parts

$0.287

100+ parts

-

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471

$0.287

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Aztec Data Supply Inc.

USA . 3,737 parts In-Stock

1+ parts

$1.232

100+ parts

-

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3,737

$1.232

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Metaverse IC Inc.

Canada . 36,530 parts In-Stock

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36,530

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QUARKTWIN TECHNOLOGY LTD

USA . 9,332 parts In-Stock

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9,332

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SupplyDigital Components

Austria . 5,525 parts In-Stock

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5,525

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TANS Electronics

Latvia . 4,671 parts In-Stock

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Argo Parts USA

USA . 4,551 parts In-Stock

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4,551

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Kepictronics

USA . 4,500 parts In-Stock

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4,500

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Perfect Parts

USA . 4,010 parts In-Stock

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4,010

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Problanco Electronics

Mexico . 2,304 parts In-Stock

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2,304

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Continental Prestige Electronics

USA . 2,083 parts In-Stock

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Supply Digital

USA . 2,032 parts In-Stock

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2,032

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Kulean Microsystems

USA . 1,616 parts In-Stock

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1,616

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UHIMA Technologies

Türkiye . 700 parts In-Stock

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700

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Aranea Global

USA . 500 parts In-Stock

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500

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Authorized Procurement Solutions

USA . 500 parts In-Stock

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500

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Overview

Discover the superior quality and reliability of the KSD1692YS by Onsemi, a leading manufacturer in the industry. As a power bipolar junction transistor (BJT), this product offers exceptional performance and versatility. Its NPN polarity and darlington configuration with built-in diode and resistor make it ideal for a wide range of applications. With its maximum power dissipation of 15W and maximum collector-emitter voltage of 100V, this transistor delivers outstanding power capabilities. Trust in Onsemi's expertise and choose the KSD1692YS for your next project to experience the value, benefits, and advantages it brings to your designs.

Feature Benefit Bullets

Package Body Material

PLASTIC/EPOXY - This material provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type

NPN - This type of transistor allows for better amplification and switching capabilities, making it versatile for different circuit designs.

Configuration

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR - The Darlington configuration, along with the built-in diode and resistor, enables high current amplification and improved switching performance.

Package Shape

RECTANGULAR - The rectangular shape allows for easy installation and compatibility with standard mounting methods.

Terminal Form

THROUGH-HOLE - The through-hole terminal form ensures secure and reliable connectivity.

No. of Elements

1 - With a single element, this transistor simplifies circuit design and offers space-saving benefits.

No. of Terminals

3 - The three-terminal design provides flexibility for connectivity and enhances compatibility with a wide range of applications.

Maximum Power Dissipation

15 W - This high power dissipation capability allows the transistor to handle more demanding loads and ensures reliable operation.

Package Style (Meter)

FLANGE MOUNT - The flange mount package style allows for easy and secure mounting, ensuring stable performance in various environments.

Minimum DC Current Gain (hFE)

4000 - With a high minimum DC current gain, this transistor offers excellent amplification and is suitable for applications requiring high gain.

Maximum Operating Temperature

150 °C - The high maximum operating temperature allows this transistor to withstand harsh environments and ensures reliable operation in demanding conditions.

Maximum Collector-Emitter Voltage

100 V - With a maximum collector-emitter voltage of 100 V, this transistor can handle higher voltage levels, making it suitable for a wide range of applications.

Transistor Element Material

SILICON - Silicon is a widely-used semiconductor material known for its high performance and reliability, making this transistor a reliable choice.

Maximum Collector Current (IC)

3 A - The high maximum collector current allows this transistor to handle larger currents, providing flexibility for a variety of applications.

Terminal Finish

Matte Tin (Sn) - annealed - The matte tin terminal finish offers good solderability and ensures secure electrical connections.

Terminal Position

SINGLE - The single terminal position simplifies installation and enables easy integration into circuit designs.

Technical Specifications

Power Bipolar Junction Transistors (BJT) KSD1692YS attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

100 V

Minimum DC Current Gain (hFE):

4000

JEDEC-95 Code:

TO-126

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Element Material:

SILICON

Trade Compliance

KSD1692YS Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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