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KSD1691GSTU

Onsemi

KSD1691GSTU by Onsemi

KSD1691GSTU by Onsemi is a NPN power bipolar junction transistor with a max collector-emitter voltage of 60V and a max collector current of 5A. It has a min DC current gain of 200 and can dissipate up to 20W of power. This transistor is commonly used in applications requiring high voltage and current amplification, such as power supplies and audio amplifiers.

Median Price

$0.932

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 14,565 parts In-Stock

1+ parts

$1.410

100+ parts

$0.517

1k+ parts

$0.385

10k+ parts

$0.336

14,565

$1.410

$0.517

$0.385

$0.336

DigiKey

USA . 252 parts In-Stock

1+ parts

$1.490

100+ parts

$0.625

1k+ parts

-

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252

$1.490

$0.625

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Flip Electronics (Authorized)

USA . 2,723 parts In-Stock

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2,723

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Verical

USA . 968 parts In-Stock

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$0.455

10k+ parts

$0.405

968

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$0.455

$0.405

Rochester

USA . 593 parts In-Stock

1+ parts

-

100+ parts

$0.438

1k+ parts

$0.364

10k+ parts

$0.324

593

-

$0.438

$0.364

$0.324

Distributors (In-Stock)

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Digiode

USA . 2,499 parts In-Stock

1+ parts

$0.341

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2,499

$0.341

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Nova Conductors

Japan . 70 parts In-Stock

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$0.402

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70

$0.402

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Vyrian

USA . 4,155 parts In-Stock

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4,155

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Flip Electronics

USA . 2,723 parts In-Stock

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2,723

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DigiKey Marketplace

USA . 2,723 parts In-Stock

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2,723

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Distributors (Availability)

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Semicontronic

India . 4,078 parts In-Stock

1+ parts

$0.264

100+ parts

$0.257

1k+ parts

$0.256

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-

4,078

$0.264

$0.257

$0.256

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Corohmni

South Africa . 430 parts In-Stock

1+ parts

$0.310

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430

$0.310

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Corphita

USA . 3,149 parts In-Stock

1+ parts

$0.323

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3,149

$0.323

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Continental Prestige Electronics

USA . 3,927 parts In-Stock

1+ parts

$0.402

100+ parts

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$0.394

3,927

$0.402

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$0.394

Argo Parts USA

USA . 940 parts In-Stock

1+ parts

$0.402

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$0.390

940

$0.402

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$0.390

Ampacity Inc.

Singapore . 4,239 parts In-Stock

1+ parts

$0.570

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4,239

$0.570

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Aztec Data Supply Inc.

USA . 854 parts In-Stock

1+ parts

$1.401

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854

$1.401

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TANS Electronics

Latvia . 8,164 parts In-Stock

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8,164

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SupplyDigital Components

Austria . 8,012 parts In-Stock

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Kulean Microsystems

USA . 6,299 parts In-Stock

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6,299

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A-Z Elektronik GmbH

Germany . 6,099 parts In-Stock

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6,099

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Perfect Parts

USA . 4,300 parts In-Stock

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4,300

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Alle Elektronik GmbH

Germany . 4,066 parts In-Stock

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4,066

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Problanco Electronics

Mexico . 2,873 parts In-Stock

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Supply Digital

USA . 2,006 parts In-Stock

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UHIMA Technologies

Türkiye . 368 parts In-Stock

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368

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Overview

Discover the exceptional quality and value of the KSD1691GSTU by Onsemi! As a leading manufacturer in the industry, Onsemi brings you a power bipolar junction transistor that exceeds expectations. With its NPN polarity and single configuration, this transistor is perfect for a wide range of applications. Whether you're working on audio amplifiers, motor control circuits, or power supply systems, the KSD1691GSTU offers unmatched reliability and performance. Benefit from its maximum power dissipation of 20W and maximum collector current of 5A. Experience the advantages of Onsemi's expertise and elevate your projects to new heights with the KSD1691GSTU.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides excellent insulation and protection for the power bipolar junction transistor, making it a reliable choice for various applications.

Polarity or Channel Type: NPN

The NPN polarity or channel type allows for easy integration into both digital and analog circuits, making this power bipolar junction transistor versatile and compatible with a wide range of devices.

Configuration: SINGLE

The single configuration of this power bipolar junction transistor simplifies its installation and usage, making it convenient and efficient for circuit designs.

Package Shape: RECTANGULAR

The rectangular package shape of this power bipolar junction transistor allows for easy mounting and positioning on PCBs, providing flexibility and space optimization in circuit designs.

Terminal Form: THROUGH-HOLE

The through-hole terminal form ensures a secure and reliable connection with circuit boards, making it suitable for applications that require robust and dependable electrical connections.

No. of Elements: 1

With a single element, this power bipolar junction transistor offers simplicity and ease of use in circuit designs, while still providing efficient current amplification capabilities.

No. of Terminals: 3

The three terminals of this power bipolar junction transistor enable convenient connection to other components, facilitating the integration of the transistor into various circuit configurations.

Maximum Power Dissipation (Abs): 20 W

With a maximum power dissipation of 20 W, this power bipolar junction transistor can handle high power applications, ensuring reliable operation even under demanding conditions.

Package Style (Meter): FLANGE MOUNT

The flange mount package style allows for secure and convenient mounting of the power bipolar junction transistor, making it suitable for applications that require stable and mechanically robust installations.

Minimum DC Current Gain (hFE): 200

With a minimum DC current gain of 200, this power bipolar junction transistor provides efficient current amplification, ensuring reliable and accurate signal processing in circuits.

Maximum Operating Temperature: 150 °C

The maximum operating temperature of 150°C allows this power bipolar junction transistor to withstand high temperature environments, making it suitable for a wide range of applications, including industrial and automotive.

Maximum Collector-Emitter Voltage: 60 V

With a maximum collector-emitter voltage of 60 V, this power bipolar junction transistor can handle high voltage applications, providing a reliable and safe solution for voltage amplification and switching circuits.

Transistor Element Material: SILICON

The silicon transistor element material offers excellent performance and reliability, making this power bipolar junction transistor a durable and efficient choice for various electronic applications.

Maximum Collector Current (IC): 5 A

With a maximum collector current of 5 A, this power bipolar junction transistor can handle high current applications, ensuring reliable performance and efficient power management in circuits.

Terminal Finish: Matte Tin (Sn) - annealed

The matte tin (Sn) terminal finish provides corrosion resistance and durable electrical contacts, ensuring long-term reliability and stable performance of this power bipolar junction transistor.

Terminal Position: SINGLE

The single terminal position allows for simple and hassle-free installation and connection of this power bipolar junction transistor, making it suitable for a wide range of circuit designs and PCB layouts.

Technical Specifications

Power Bipolar Junction Transistors (BJT) KSD1691GSTU attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

200

JEDEC-95 Code:

TO-126

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Element Material:

SILICON

Trade Compliance

KSD1691GSTU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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