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KSD1588YTU

Onsemi

KSD1588YTU by Onsemi

KSD1588YTU by Onsemi is a NPN BJT transistor with 30W power dissipation, hFE of 100, and max collector current of 7A. Ideal for amplifier applications, it operates at up to 150°C with a max VCE of 60V.

Median Price

$0.739

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 1 parts In-Stock

1+ parts

$0.266

100+ parts

-

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1

$0.266

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Mouser Electronics

USA . 662 parts In-Stock

1+ parts

$2.000

100+ parts

$0.861

1k+ parts

$0.600

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-

662

$2.000

$0.861

$0.600

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Rochester

USA . 9,151 parts In-Stock

1+ parts

-

100+ parts

$0.712

1k+ parts

$0.591

10k+ parts

$0.527

9,151

-

$0.712

$0.591

$0.527

DigiKey

USA . 9,151 parts In-Stock

1+ parts

-

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$0.890

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9,151

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$0.890

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Verical

USA . 9,104 parts In-Stock

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$0.739

10k+ parts

$0.659

9,104

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$0.739

$0.659

Flip Electronics (Authorized)

USA . 3,000 parts In-Stock

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3,000

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Chip1Stop

Japan . 1 parts In-Stock

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Distributors (In-Stock)

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DF Sales Co.

USA . 179 parts In-Stock

1+ parts

$0.260

100+ parts

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179

$0.260

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DF Sales Co.

USA . 179 parts In-Stock

1+ parts

$0.260

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179

$0.260

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Digiode

USA . 2,030 parts In-Stock

1+ parts

$0.335

100+ parts

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2,030

$0.335

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Nova Conductors

Japan . 44 parts In-Stock

1+ parts

$0.621

100+ parts

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44

$0.621

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Bristol Electronics

USA . 44 parts In-Stock

1+ parts

$1.313

100+ parts

$0.525

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44

$1.313

$0.525

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Vyrian

USA . 5,069 parts In-Stock

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5,069

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Flip Electronics

USA . 3,000 parts In-Stock

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3,000

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ComSIT Distribution GmbH

Germany . 330 parts In-Stock

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330

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ComSIT USA

USA . 330 parts In-Stock

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330

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 175 parts In-Stock

1+ parts

$0.260

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175

$0.260

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Ampacity Inc.

Singapore . 5,213 parts In-Stock

1+ parts

$0.301

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5,213

$0.301

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Corphita

USA . 1,126 parts In-Stock

1+ parts

$0.318

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1,126

$0.318

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Argo Parts USA

USA . 849 parts In-Stock

1+ parts

$0.621

100+ parts

-

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10k+ parts

$0.602

849

$0.621

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-

$0.602

Aztec Data Supply Inc.

USA . 17,105 parts In-Stock

1+ parts

$0.700

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-

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17,105

$0.700

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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56,986

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QUARKTWIN TECHNOLOGY LTD

USA . 11,761 parts In-Stock

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11,761

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Continental Prestige Electronics

USA . 10,651 parts In-Stock

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$0.720

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10,651

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$0.720

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SupplyDigital Components

Austria . 7,019 parts In-Stock

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TANS Electronics

Latvia . 5,636 parts In-Stock

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5,636

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Kulean Microsystems

USA . 3,955 parts In-Stock

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3,955

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Perfect Parts

USA . 3,334 parts In-Stock

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3,334

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Glotronic Ltd.

UK . 1,800 parts In-Stock

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Supply Digital

USA . 1,053 parts In-Stock

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1,053

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UHIMA Technologies

Türkiye . 560 parts In-Stock

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560

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Problanco Electronics

Mexico . 230 parts In-Stock

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230

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Overview

Enhance your electronic designs with the KSD1588YTU Power BJT from Onsemi! Crafted with top-notch quality and precision, this NPN transistor is perfect for amplifier applications. With a maximum power dissipation of 30W and a collector current of 7A, this transistor offers unmatched performance and reliability. Whether you're a hobbyist or a professional, this product provides exceptional value and benefits, making it a must-have component for your projects. Upgrade your circuits today and experience the advantages of using the KSD1588YTU by Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material ensures durability and resistance to external elements, making this transistor suitable for a variety of applications.

Polarity or Channel Type: NPN

The NPN polarity or channel type allows for easy integration into NPN-based circuits, enhancing compatibility and flexibility in amplifier applications.

Configuration: SINGLE

The single configuration simplifies the setup and installation process, making it a straightforward choice for amplifier circuit designs.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, this transistor offers excellent performance and reliability in amplifying signals effectively.

Package Shape: RECTANGULAR

The rectangular package shape provides a compact form factor, allowing for space-efficient placement within circuit layouts.

Terminal Form: THROUGH-HOLE

The through-hole terminal form facilitates easy soldering and secure connection within circuit boards, ensuring stable operation in amplifier circuits.

No. of Terminals: 3

With three terminals, this transistor offers the necessary connections for input, output, and power supply, enabling seamless integration into amplifier circuits.

Maximum Power Dissipation (Abs): 30 W

The high maximum power dissipation of 30W allows this transistor to handle large power loads, making it suitable for high-performance amplifier applications.

Package Style (Meter): FLANGE MOUNT

The flange mount package style provides mechanical stability and ease of mounting, ensuring reliable operation in amplifier circuits.

Minimum DC Current Gain (hFE): 100

With a minimum DC current gain of 100, this transistor offers consistent amplification capability, ensuring accurate signal reproduction in amplifier circuits.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C allows this transistor to withstand elevated temperatures, ensuring reliable performance in various amplifier applications.

Maximum Collector-Emitter Voltage: 60 V

The high maximum collector-emitter voltage of 60V enables this transistor to handle higher voltage levels, making it suitable for a wide range of amplifier applications.

Transistor Element Material: SILICON

The use of silicon as the transistor element material ensures high performance, reliability, and efficiency in amplification processes.

Maximum Collector Current (IC): 7 A

With a maximum collector current of 7A, this transistor can handle high levels of current flow, making it ideal for power-hungry amplifier circuits.

Terminal Finish: Matte Tin (Sn) - annealed

The matte tin terminal finish provides corrosion resistance and enhances solderability, ensuring long-term reliability in amplifier circuit connections.

Terminal Position: SINGLE

The single terminal position simplifies the installation process and ensures proper alignment of connections, enhancing the reliability and performance of amplifier circuits.

Case Connection: ISOLATED

The isolated case connection helps prevent electrical interference and ensures signal integrity, making this transistor suitable for high-fidelity amplifier applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) KSD1588YTU attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

7 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

KSD1588YTU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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