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KAC-06040-CBA-JD-AA

Onsemi

KAC-06040-CBA-JD-AA by Onsemi

The Onsemi KAC-06040-CBA-JD-AA is a CMOS image sensor with 4.70x4.70 um pixel size, 2832 horizontal pixels, and 2128 vertical pixels. It operates at temperatures from -50 to 80 °C and has a frame rate of 160 fps. Ideal for applications requiring high-resolution imaging in industrial or scientific settings.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,784 parts In-Stock

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Digiode

USA . 1,301 parts In-Stock

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1,301

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SupplyDigital Components

Austria . 7,201 parts In-Stock

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TANS Electronics

Latvia . 7,046 parts In-Stock

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Problanco Electronics

Mexico . 6,995 parts In-Stock

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6,995

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Kulean Microsystems

USA . 1,552 parts In-Stock

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Corphita

USA . 1,320 parts In-Stock

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UHIMA Technologies

Türkiye . 511 parts In-Stock

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Corohmni

South Africa . 200 parts In-Stock

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Overview

Revolutionize your imaging experience with the KAC-06040-CBA-JD-AA by Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-notch quality and reliability in their Image Sensors. This cutting-edge technology offers endless possibilities in applications such as surveillance, automotive, and medical imaging. With high performance and efficiency, this sensor provides unmatched value and benefits to customers seeking superior image quality and accurate results. Upgrade your imaging solutions today with the KAC-06040-CBA-JD-AA and experience the difference!

Feature Benefit Bullets

Pixel Size (um): 4.70X4.70

The small pixel size allows for higher resolution images to be captured, making it suitable for applications requiring detailed image quality.

Master Clock: 50 MHz

The high master clock frequency enables fast data readout and processing, resulting in smooth and rapid image capture.

Power Supplies (V): 2

The low power supply requirement of 2V helps in reducing power consumption and making the device energy-efficient.

Sensors or Transducers Type: IMAGE SENSOR, CMOS

CMOS sensors are known for their low noise and high sensitivity, ensuring accurate image capture in various lighting conditions.

Maximum Operating Temperature: 80 °C

The high maximum operating temperature of 80 °C allows the sensor to be used in a wide range of environmental conditions without performance degradation.

Minimum Operating Temperature: -50 °C

The low minimum operating temperature of -50 °C ensures the sensor can function reliably even in extreme cold environments.

Housing: CERAMIC

Ceramic housing offers durability and thermal stability, protecting the sensor from external impacts and temperature fluctuations.

Dynamic Range: 72 dB

The high dynamic range of 72 dB allows the sensor to capture a wide range of light intensities accurately, resulting in detailed and well-exposed images.

Vertical Pixel: 2128

The high vertical pixel count contributes to better image resolution and clarity, making this sensor suitable for applications where fine details need to be captured.

Frame Rate: 160 fps

The high frame rate of 160 frames per second enables smooth and fluid video recording, making this sensor ideal for applications that require fast-moving subjects to be captured.

Array Type: FRAME

The frame array type allows for efficient data processing and transfer, ensuring quick and accurate image acquisition.

Mounting Feature: THROUGH HOLE MOUNT

The through hole mounting feature makes the sensor easy to install and secure, providing stability during operation.

Technical Specifications

Image Sensors KAC-06040-CBA-JD-AA attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

GLOBAL SHUTTER, ROLLING SHUTTER

Array Type:

FRAME

Dynamic Range:

72 dB

Frame Rate:

160 fps

Horizontal Pixel:

2832

Housing:

CERAMIC

Master Clock:

50 MHz

Mounting Feature:

Maximum Operating Temperature:

80 Cel

Minimum Operating Temperature:

-50 Cel

Optical Format (inch):

1

Pixel Size (um):

4.70X4.70

Power Supplies (V):

2

Sensors or Transducers Type:

Sub-Category:

CCD Image Sensors

Vertical Pixel:

2128

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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