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KAC-06040-ABA-JD-AE

Onsemi

KAC-06040-ABA-JD-AE by Onsemi

The Onsemi KAC-06040-ABA-JD-AE Image Sensor features 4.70x4.70 um pixel size, 50 MHz master clock, and 2832 horizontal pixels. Ideal for applications requiring high-resolution imaging with a max supply voltage of 2.1 V and SPI interface output type at a frame rate of 160 fps.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,039 parts In-Stock

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Digiode

USA . 919 parts In-Stock

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Problanco Electronics

Mexico . 7,933 parts In-Stock

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TANS Electronics

Latvia . 6,507 parts In-Stock

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Corphita

USA . 2,182 parts In-Stock

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Kulean Microsystems

USA . 1,661 parts In-Stock

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UHIMA Technologies

Türkiye . 745 parts In-Stock

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SupplyDigital Components

Austria . 269 parts In-Stock

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Corohmni

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Overview

Experience the industry-leading quality and precision of the KAC-06040-ABA-JD-AE image sensor by Onsemi. As a trusted manufacturer in the field, Onsemi delivers top-of-the-line sensors that exceed expectations in various applications. From high-resolution imaging to advanced digital voltage output, this sensor offers unparalleled performance and reliability. Unlock new possibilities in your projects with the cutting-edge technology and superior design of the KAC-06040-ABA-JD-AE image sensor from Onsemi.

Feature Benefit Bullets

Pixel Size (um): 4.70X4.70

Large pixel size allows for better light sensitivity, resulting in clearer and more detailed images.

Maximum Supply Voltage: 2.1 V

Higher maximum supply voltage provides ample power for efficient operation of the image sensor.

Master Clock: 50 MHz

High master clock frequency enables fast data processing and high frame rates, suitable for capturing moving objects.

Body Width: 38.1 inch

Compact body width allows for easy integration into various devices and systems.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS image sensor technology offers low power consumption, high image quality, and fast operation.

Package Shape or Style: RECTANGULAR

Rectangular package shape provides a standardized form factor for easy mounting and handling.

Minimum Supply Voltage: 1.9 V

Low minimum supply voltage helps in reducing power consumption and increasing the efficiency of the image sensor.

Maximum Operating Temperature: 80 °C

High maximum operating temperature ensures reliable performance in a wide range of environmental conditions.

Horizontal Pixel: 2832

High horizontal pixel count delivers high-resolution images with impressive detail.

Output Type: DIGITAL VOLTAGE

Digital voltage output simplifies interfacing with other components and systems, enhancing compatibility and ease of use.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature allows for use in extreme cold environments without compromising performance.

Housing: CERAMIC

Ceramic housing provides durability and thermal stability, ensuring long-term reliability of the image sensor.

Dynamic Range: 72 dB

High dynamic range allows the image sensor to capture a wide range of light intensities, resulting in accurate and vibrant images.

Vertical Pixel: 2128

High vertical pixel count contributes to detailed and well-balanced image composition.

Body Length/Diameter: 42.5 mm

Optimal body length/diameter ratio offers a good balance between compact size and functionality.

Termination Type: SOLDER

Solder termination provides a reliable electrical connection and ease of installation for the image sensor.

Output Interface Type: SPI INTERFACE

SPI interface allows for fast and efficient communication with external devices, enabling seamless integration into different systems.

Frame Rate: 160 fps

High frame rate enables smooth and real-time image capture, making the image sensor suitable for dynamic applications.

Array Type: FRAME

Frame array type organizes pixels in a structured grid pattern, facilitating image processing and enhancing overall image quality.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting feature simplifies the installation process and ensures secure attachment of the image sensor onto circuit boards or other surfaces.

Technical Specifications

Image Sensors KAC-06040-ABA-JD-AE attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

GLOBAL SHUTTER, ROLLING SHUTTER

Array Type:

FRAME

Body Width:

38.1 inch

Body Height:

4.65 mm

Body Length/Diameter:

42.5 mm

Dynamic Range:

72 dB

Frame Rate:

160 fps

Horizontal Pixel:

2832

Housing:

CERAMIC

Master Clock:

50 MHz

Mounting Feature:

Maximum Operating Temperature:

80 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1

Output Interface Type:

SPI INTERFACE

Output Type:

Package Shape or Style:

Pixel Size (um):

4.70X4.70

Sensors or Transducers Type:

Maximum Supply Voltage:

2.1 V

Minimum Supply Voltage:

1.9 V

Termination Type:

SOLDER

Vertical Pixel:

2128

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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