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KAC-06040-CBA-JD-BA

Onsemi

KAC-06040-CBA-JD-BA by Onsemi

The Onsemi KAC-06040-CBA-JD-BA is an image sensor with 4.7X4.7 um pixel size, 50 MHz master clock, and 2832 horizontal pixels. It is ideal for applications requiring a digital voltage output interface, such as high-speed imaging systems or industrial cameras. With a max operating temperature of 80 °C and a dynamic range of 74 dB, this CMOS sensor offers reliable performance in various environments.

Median Price

$3,513.200

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

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Arrow

USA . 2 parts In-Stock

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Verical

USA . 2 parts In-Stock

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Digiode

USA . 260 parts In-Stock

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$3,337.540

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Vyrian

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AZTECH Wire

Italy . 1,061 parts In-Stock

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Corphita

USA . 1,815 parts In-Stock

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Corohmni

South Africa . 223 parts In-Stock

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Problanco Electronics

Mexico . 4,910 parts In-Stock

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TANS Electronics

Latvia . 4,132 parts In-Stock

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SupplyDigital Components

Austria . 2,267 parts In-Stock

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Kulean Microsystems

USA . 1,572 parts In-Stock

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UHIMA Technologies

Türkiye . 876 parts In-Stock

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Overview

Unlock a world of clarity and precision with the KAC-06040-CBA-JD-BA image sensor by Onsemi. Crafted with expertise and innovation, this sensor offers unparalleled quality and performance in capturing images with stunning detail. Ideal for a wide range of applications, this sensor provides exceptional value by delivering crystal-clear images at a rapid pace. Elevate your projects to new heights with the advanced technology and reliability of the KAC-06040-CBA-JD-BA image sensor.

Feature Benefit Bullets

Pixel Size (um): 4.7X4.7

A small pixel size allows for detailed and high-resolution images to be captured.

Maximum Supply Voltage: 2.1 V

A higher maximum supply voltage ensures reliable and stable operation of the image sensor.

Master Clock: 50 MHz

The high master clock frequency of 50 MHz allows for fast processing of image data.

Body Width: 38.1 inch

The compact body width of 38.1 inch makes it easier to integrate this image sensor into different devices or systems.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS image sensors are known for their low power consumption and high sensitivity, making them a popular choice for various applications.

Body Height: 4.65 mm

A low body height of 4.65 mm allows for slim and compact designs when using this image sensor.

Package Shape or Style: RECTANGULAR

The rectangular package shape makes it easier to mount and align the image sensor in different devices or systems.

Minimum Supply Voltage: 1.9 V

The low minimum supply voltage of 1.9 V helps in reducing power consumption and extending battery life in portable devices.

Maximum Operating Temperature: 80 °C

With a maximum operating temperature of 80 °C, this image sensor can function reliably in a wide range of environments.

Horizontal Pixel: 2832

A high horizontal pixel count of 2832 enables high-resolution images to be captured with sharp details.

Output Type: DIGITAL VOLTAGE

Digital voltage output simplifies the interface with other components and processing units, making data transfer more efficient.

Minimum Operating Temperature: -40 °C

The image sensor can operate at temperatures as low as -40 °C, making it suitable for use in harsh or extreme environments.

Housing: CERAMIC

Ceramic housing provides durability and protection to the image sensor, ensuring long-term reliability.

Dynamic Range: 74 dB

A high dynamic range of 74 dB allows the image sensor to capture both bright and dark details in the same scene accurately.

Vertical Pixel: 2128

With a vertical pixel count of 2128, this image sensor can capture images with high vertical resolution.

Body Length/Diameter: 42.5 mm

The compact body length/diameter of 42.5 mm makes this image sensor suitable for small and space-constrained devices.

Termination Type: SOLDER

Solder termination provides a reliable connection and ensures stability during operation.

Output Interface Type: SPI INTERFACE

SPI interface allows for fast and efficient communication with other devices, making the image sensor versatile and easy to integrate.

Frame Rate: 160 fps

A high frame rate of 160 fps enables the image sensor to capture fast-moving objects with clarity and smoothness.

Array Type: FRAME

The frame array type allows for organized and structured image capture, ensuring consistent output.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting feature facilitates easy and secure installation of the image sensor onto circuit boards or other surfaces.

Technical Specifications

Image Sensors KAC-06040-CBA-JD-BA attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT ALSO HAVE ANALOG SUPPLY VOLTAGE FROM 1.71 TO 1.89V, GLOBAL SHUTTER, ROLLING SHUTTER

Array Type:

FRAME

Body Width:

38.1 inch

Body Height:

4.65 mm

Body Length/Diameter:

42.5 mm

Dynamic Range:

74 dB

Frame Rate:

160 fps

Horizontal Pixel:

2832

Housing:

CERAMIC

Master Clock:

50 MHz

Mounting Feature:

Maximum Operating Temperature:

80 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1

Output Interface Type:

SPI INTERFACE

Output Type:

Package Shape or Style:

Pixel Size (um):

4.7X4.7

Sensors or Transducers Type:

Maximum Supply Voltage:

2.1 V

Minimum Supply Voltage:

1.9 V

Termination Type:

SOLDER

Vertical Pixel:

2128

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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