Loading...

FGH25T120SMD_F155

Onsemi

FGH25T120SMD_F155 by Onsemi

FGH25T120SMD_F155 by Onsemi is an N-CHANNEL IGBT with a Max VCEsat of 2.4V and Max Collector-Emitter Voltage of 1200V. It is used for POWER CONTROL applications, featuring a Nominal Turn Off Time of 584ns and Max Power Dissipation of 428W in a RECTANGULAR package style.

Median Price

$3.230

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Avnet

USA . 210 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

210

-

-

-

-

Future Electronics

Canada . 200 parts In-Stock

1+ parts

-

100+ parts

$3.230

1k+ parts

$3.180

10k+ parts

-

200

-

$3.230

$3.180

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 98 parts In-Stock

1+ parts

$4.375

100+ parts

-

1k+ parts

-

10k+ parts

-

98

$4.375

-

-

-

Vyrian

USA . 2,630 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,630

-

-

-

-

Digiode

USA . 1,922 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,922

-

-

-

-

IBS Electronics

USA . 200 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$4.460

10k+ parts

-

200

-

-

$4.460

-

NAC Semi

USA . 150 parts In-Stock

1+ parts

-

100+ parts

$5.380

1k+ parts

$4.970

10k+ parts

-

150

-

$5.380

$4.970

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 707 parts In-Stock

1+ parts

$4.202

100+ parts

-

1k+ parts

-

10k+ parts

-

707

$4.202

-

-

-

Continental Prestige Electronics

USA . 6,911 parts In-Stock

1+ parts

$4.375

100+ parts

-

1k+ parts

-

10k+ parts

$4.288

6,911

$4.375

-

-

$4.288

Argo Parts USA

USA . 2,451 parts In-Stock

1+ parts

$4.375

100+ parts

-

1k+ parts

-

10k+ parts

-

2,451

$4.375

-

-

-

AZTECH Wire

Italy . 951 parts In-Stock

1+ parts

$12.827

100+ parts

-

1k+ parts

-

10k+ parts

-

951

$12.827

-

-

-

Microchip USA

USA . 6,247 parts In-Stock

1+ parts

$21.168

100+ parts

-

1k+ parts

-

10k+ parts

-

6,247

$21.168

-

-

-

Ampacity Inc.

Singapore . 223 parts In-Stock

1+ parts

$22.050

100+ parts

-

1k+ parts

-

10k+ parts

-

223

$22.050

-

-

-

Perfect Parts

USA . 301,888 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

301,888

-

-

-

-

Lixinc

USA . 14,536 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

14,536

-

-

-

-

TANS Electronics

Latvia . 13,969 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

13,969

-

-

-

-

SupplyDigital Components

Austria . 11,310 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

11,310

-

-

-

-

Problanco Electronics

Mexico . 9,916 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

9,916

-

-

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 8,716 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,716

-

-

-

-

Kulean Microsystems

USA . 7,014 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,014

-

-

-

-

Kepictronics

USA . 5,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,000

-

-

-

-

Corphita

USA . 3,733 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,733

-

-

-

-

UHIMA Technologies

Türkiye . 1,430 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,430

-

-

-

-

Authorized Procurement Solutions

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,000

-

-

-

-

RC Electronics

USA . 450 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

450

-

-

-

-

GreenTree Electronics

Israel . 450 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

450

-

-

-

-

Metaverse IC Inc.

Canada . 400 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

400

-

-

-

-

Supply Digital

USA . 285 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

285

-

-

-

-

Netroflash

USA . 150 parts In-Stock

1+ parts

-

100+ parts

$4.288

1k+ parts

$4.156

10k+ parts

$4.069

150

-

$4.288

$4.156

$4.069

Overview

Elevate your power control applications with the FGH25T120SMD_F155 by Onsemi. This N-CHANNEL Insulated Gate Bipolar Transistor (IGBT) offers superior quality and reliability, thanks to Onsemi's renowned manufacturing standards. With a maximum Collector-Emitter Voltage of 1200V and a Maximum Collector Current of 50A, this transistor ensures optimal performance and efficiency in your power control systems. Trust Onsemi for cutting-edge technology that delivers unmatched value and benefits to our customers.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides insulation and protection for the internal components, ensuring robustness and durability.

Polarity or Channel Type: N-CHANNEL

Offers efficient current conduction and control capabilities.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design and enhances overall functionality.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, ensuring reliable performance.

Maximum VCEsat: 2.4 V

Low saturation voltage reduces power loss and increases efficiency.

Package Shape: RECTANGULAR

Allows for easy integration into existing circuit layouts.

Terminal Form: THROUGH-HOLE

Facilitates easy and secure mounting on circuit boards.

Nominal Turn Off Time (toff): 584 ns

Fast turn-off time enhances switching speed and efficiency.

No. of Terminals: 3

Simple connectivity for ease of use in various applications.

Maximum Power Dissipation (Abs): 428 W

High power dissipation capability enables handling of large electrical loads.

Package Style (Meter): FLANGE MOUNT

Enables secure mounting and heat dissipation in industrial settings.

Maximum Operating Temperature: 175 °C

Allows operation in high-temperature environments without compromising performance.

Maximum Collector-Emitter Voltage: 1200 V

High voltage rating for handling demanding applications.

Transistor Element Material: SILICON

Known for its reliability and efficiency in electronic components.

Maximum Gate-Emitter Voltage: 25 V

Safe operating voltage range for stable performance.

Minimum Operating Temperature: -55 °C

Wide temperature range allows for operation in extreme conditions.

Maximum Collector Current (IC): 50 A

High collector current rating for handling heavy loads.

Maximum Gate-Emitter Threshold Voltage: 7.5 V

Optimal threshold voltage for efficient gate control.

Terminal Finish: TIN

Provides corrosion resistance and ensures good electrical conductivity.

Terminal Position: SINGLE

Simplified connectivity for ease of installation.

Case Connection: COLLECTOR

Specifically designed connection for effective current conduction.

Nominal Turn On Time (ton): 88 ns

Fast turn-on time enhances response speed in power control applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) FGH25T120SMD_F155 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi

Specs

Additional Features:

RC-IGBT

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Maximum Gate-Emitter Threshold Voltage:

7.5 V

Maximum Gate-Emitter Voltage:

25 V

JEDEC-95 Code:

TO-247AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

584 ns

Nominal Turn On Time (ton):

88 ns

Maximum VCEsat:

2.4 V

Trade Compliance

FGH25T120SMD_F155 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 10