Loading...

DTA143TET1G

Onsemi

DTA143TET1G by Onsemi

DTA143TET1G by Onsemi is a PNP BJT transistor with built-in resistor for switching applications. It has a max collector-emitter voltage of 50V, max collector current of 0.1A, and min DC current gain of 160. This surface-mount device comes in a small outline package with gull wing terminals, making it ideal for compact electronic designs.

Median Price

$0.024

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 3,000 parts In-Stock

1+ parts

$0.190

100+ parts

$0.070

1k+ parts

$0.045

10k+ parts

$0.031

3,000

$0.190

$0.070

$0.045

$0.031

Verical

USA . 54,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.018

54,000

-

-

-

$0.018

Rochester

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

$0.024

1k+ parts

$0.020

10k+ parts

$0.018

6,000

-

$0.024

$0.020

$0.018

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 420 parts In-Stock

1+ parts

$0.024

100+ parts

-

1k+ parts

-

10k+ parts

-

420

$0.024

-

-

-

Vyrian

USA . 1,249 parts In-Stock

1+ parts

$0.025

100+ parts

-

1k+ parts

-

10k+ parts

-

1,249

$0.025

-

-

-

Flip Electronics

USA . 93,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

93,000

-

-

-

-

ComSIT Distribution GmbH

Germany . 12,170 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

12,170

-

-

-

-

NAC Semi

USA . 12,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.100

12,000

-

-

-

$0.100

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 54 parts In-Stock

1+ parts

$0.022

100+ parts

-

1k+ parts

-

10k+ parts

-

54

$0.022

-

-

-

Corohmni

South Africa . 84 parts In-Stock

1+ parts

$0.024

100+ parts

-

1k+ parts

-

10k+ parts

-

84

$0.024

-

-

-

Northwest PG Solutions

USA . 2,375 parts In-Stock

1+ parts

$3.509

100+ parts

-

1k+ parts

-

10k+ parts

-

2,375

$3.509

-

-

-

Perfect Parts

USA . 73,920 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

73,920

-

-

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 23,651 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

23,651

-

-

-

-

Eastek

USA . 21,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

21,000

-

-

-

-

SupplyDigital Components

Austria . 7,270 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,270

-

-

-

-

Problanco Electronics

Mexico . 6,816 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,816

-

-

-

-

Kulean Microsystems

USA . 5,672 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,672

-

-

-

-

TANS Electronics

Latvia . 5,507 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,507

-

-

-

-

Authorized Procurement Solutions

USA . 4,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,000

-

-

-

-

UHIMA Technologies

Türkiye . 506 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

506

-

-

-

-

Native Components

USA . 354 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$3.094

10k+ parts

-

354

-

-

$3.094

-

Overview

Discover the superior performance and reliability of the DTA143TET1G by Onsemi. This Small Signal Bipolar Junction Transistor (BJT) is perfect for switching applications, offering unmatched quality and precision. With a single configuration and built-in resistor, this PNP transistor is a must-have for your electronic projects. Trust in Onsemi's reputation for excellence and innovation. Upgrade your designs today with the DTA143TET1G and experience the difference in performance and efficiency it brings.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material provides durability and makes the transistor resistant to external elements, ensuring a longer lifespan.

Polarity or Channel Type: PNP

The PNP configuration allows for easy integration with other PNP components in a circuit, making it versatile for different design applications.

Configuration: SINGLE WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and reduces the need for additional components, saving space and cost in the overall design.

Transistor Application: SWITCHING

Ideal for switching applications, this transistor can quickly turn on/off current flow, making it suitable for use in a variety of electronic devices and circuits.

Surface Mount: YES

Being surface mountable simplifies the manufacturing process and allows for more compact and efficient circuit board designs.

Package Shape: RECTANGULAR

The rectangular shape makes the transistor easy to handle and mount on a circuit board, ensuring a secure fit during assembly.

Terminal Form: GULL WING

The gull wing terminal form provides easy soldering and secure connections, improving reliability in the circuit design.

No. of Terminals: 3

With 3 terminals, this transistor is easy to connect in a circuit and offers flexibility in design configurations.

Maximum Power Dissipation (Abs): 0.3 W

The high maximum power dissipation allows for the transistor to handle a range of power levels, making it suitable for various applications.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the circuit board, making it ideal for compact electronic devices.

Minimum DC Current Gain (hFE): 160

With a minimum DC current gain of 160, this transistor provides consistent and reliable amplification of current in the circuit.

Maximum Collector-Emitter Voltage: 50 V

The high collector-emitter voltage rating allows the transistor to handle higher voltages in the circuit, improving its versatility and reliability.

Transistor Element Material: SILICON

Silicon material offers high performance and reliability, making the transistor suitable for demanding switching applications.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1 A, this transistor can handle moderate current levels, making it suitable for various load requirements.

Terminal Finish: Matte Tin (Sn) - annealed

The matte tin terminal finish provides corrosion resistance and ensures a reliable electrical connection, enhancing the overall durability of the transistor.

Terminal Position: DUAL

With dual terminal positions, this transistor offers flexibility in orientation and mounting options, making it easy to integrate into different circuit layouts.

Maximum Time At Peak Reflow Temperature (s): 40

The maximum time at peak reflow temperature ensures proper soldering of the transistor on the circuit board, preventing damage during assembly.

Peak Reflow Temperature °C: 260

The high peak reflow temperature allows for reliable soldering of the transistor on the circuit board, ensuring a secure connection in high-temperature environments.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DTA143TET1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT-IN BIAS RESISTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

160

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DTA143TET1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20