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DL-3180-121

Onsemi

DL-3180-121 by Onsemi

DL-3180-121 by Onsemi is a LASER DIODE with peak wavelength of 790nm. It has max forward current of 0.045A and max forward voltage of 2.3V. Ideal for applications requiring precise laser emission in temperature range -10 to 60 °C, featuring through hole mounting.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,399 parts In-Stock

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2,399

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Digiode

USA . 2,193 parts In-Stock

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Native Components

USA . 715 parts In-Stock

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$0.099

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$0.095

715

$0.099

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$0.095

Northwest PG Solutions

USA . 128 parts In-Stock

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$0.109

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$0.096

128

$0.109

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$0.096

Problanco Electronics

Mexico . 7,199 parts In-Stock

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7,199

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SupplyDigital Components

Austria . 4,564 parts In-Stock

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4,564

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TANS Electronics

Latvia . 1,568 parts In-Stock

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Corphita

USA . 1,276 parts In-Stock

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UHIMA Technologies

Türkiye . 339 parts In-Stock

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Corohmni

South Africa . 59 parts In-Stock

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Kulean Microsystems

USA . 27 parts In-Stock

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Overview

Elevate your projects with the DL-3180-121 by Onsemi, a premium laser diode that guarantees exceptional quality and reliability. Manufactured by industry leader Onsemi, this cutting-edge product is perfect for a wide range of applications in fields such as telecommunications, medical equipment, and industrial machinery. Offering unparalleled value and performance, the DL-3180-121 delivers superior results while ensuring maximum efficiency and precision. Experience the advantages of using this top-of-the-line laser diode and take your projects to new heights.

Feature Benefit Bullets

Maximum Forward Current: 0.045 A

This laser diode has a low maximum forward current requirement, making it energy-efficient and suitable for low-power applications.

Peak Wavelength (nm): 790

The peak wavelength of 790nm indicates that this laser diode is suitable for specific applications that require this particular wavelength of light.

Optoelectronic Type: LASER DIODE

Being a laser diode, this product provides coherent and focused light output, making it ideal for precision applications such as laser cutting or medical equipment.

Maximum Operating Temperature: 60 °C

With a maximum operating temperature of 60 °C, this laser diode can withstand high temperatures, making it reliable in a variety of environments.

Minimum Operating Temperature: -10 °C

The low minimum operating temperature of -10 °C ensures that this laser diode can function even in colder conditions, increasing its versatility.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature makes the installation of this laser diode easy and secure, ensuring stable performance in the intended application.

Maximum Forward Voltage: 2.3 V

With a maximum forward voltage of 2.3V, this laser diode is efficient in converting electrical energy into light, resulting in lower power consumption and heat generation.

Technical Specifications

Laser Diodes DL-3180-121 attributes and parameters. Explore more Laser Diodes devices from Onsemi

Specs

Maximum Forward Current:

.045 A

Maximum Forward Voltage:

2.3 V

Mounting Feature:

Maximum Operating Temperature:

60 Cel

Minimum Operating Temperature:

-10 Cel

Optoelectronic Type:

Peak Wavelength (nm):

790

Sub-Category:

Laser Diodes

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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