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CAT28F020GA-90T

Onsemi

CAT28F020GA-90T by Onsemi

CAT28F020GA-90T by Onsemi is a 256Kx8 NOR Flash Memory with 2097152-bit memory density. It operates at 5V, has 100000 Write/Erase cycles endurance, and offers 90ns max access time. Ideal for industrial applications requiring high-speed parallel memory with a compact chip carrier package style.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 884 parts In-Stock

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Vyrian

USA . 351 parts In-Stock

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SupplyDigital Components

Austria . 7,827 parts In-Stock

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Problanco Electronics

Mexico . 7,657 parts In-Stock

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TANS Electronics

Latvia . 2,798 parts In-Stock

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Kulean Microsystems

USA . 1,896 parts In-Stock

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Northwest PG Solutions

USA . 902 parts In-Stock

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Corphita

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Native Components

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Corohmni

South Africa . 354 parts In-Stock

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UHIMA Technologies

Türkiye . 12 parts In-Stock

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Overview

Upgrade your device with the CAT28F020GA-90T by Onsemi, a top-quality Flash Memory chip that delivers unmatched performance and reliability. With Onsemi's reputation for excellence in semiconductor manufacturing, this chip offers a wide range of applications in industrial settings. Experience the value of fast access times, high endurance, and low standby current, making it the perfect choice for demanding projects where speed and efficiency are essential. Trust Onsemi to provide you with cutting-edge technology that exceeds expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable material that can withstand harsh conditions, making the product reliable for long term use.

Operating Mode: ASYNCHRONOUS

Allows for independent operations without requiring synchronization, increasing efficiency and flexibility in data access.

Maximum Operating Temperature: 105 °C

Can operate in high temperature environments without risking damage, suitable for industrial applications.

Organization: 256KX8

Offers a large memory organization with a width of 8 bits, ideal for storing a significant amount of data.

Endurance: 100000 Write/Erase Cycles

Can withstand a high number of write and erase cycles, ensuring longevity and reliability of the memory storage.

Memory IC Type: FLASH

Flash memory technology provides fast read and write speeds, making it ideal for applications requiring quick data access and storage.

Technical Specifications

Flash Memory CAT28F020GA-90T attributes and parameters. Explore more Flash Memory devices from Onsemi

Specs

Maximum Access Time:

90 ns

Command User Interface:

YES

Data Polling:

NO

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PQCC-J32

JESD-609 Code:

e3

Length:

13.97 mm

Memory Density:

2097152 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

32

No. of Words:

262144 words

No. of Words Code:

256K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LDCC32,.5X.6

Package Shape:

Package Style (Meter):

CHIP CARRIER

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Programming Voltage (V):

12

Qualification:

Not Qualified

Maximum Seated Height:

3.55 mm

Maximum Standby Current:

.0001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

30 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.75 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

J BEND

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Toggle Bit:

NO

Type:

NOR TYPE

Width:

11.43 mm

Trade Compliance

CAT28F020GA-90T Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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