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CAT28F010NA-70T

Onsemi

CAT28F010NA-70T by Onsemi

CAT28F010NA-70T by Onsemi is a 128Kx8 NOR flash memory chip with 70ns access time. Operating at 5V, it has a programming voltage of 12V and industrial temperature grade. Widely used in applications requiring fast, non-volatile memory storage in harsh environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 1,071 parts In-Stock

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Vyrian

USA . 478 parts In-Stock

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Native Components

USA . 426 parts In-Stock

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$1.905

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Northwest PG Solutions

USA . 1,112 parts In-Stock

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$2.095

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TANS Electronics

Latvia . 6,805 parts In-Stock

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Kulean Microsystems

USA . 6,221 parts In-Stock

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Problanco Electronics

Mexico . 4,064 parts In-Stock

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SupplyDigital Components

Austria . 1,947 parts In-Stock

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Corohmni

South Africa . 139 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 7 parts In-Stock

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Overview

Experience the cutting-edge technology of Onsemi's CAT28F010NA-70T Flash Memory, designed to deliver top-notch performance and reliability. With a focus on quality and innovation, Onsemi is a trusted manufacturer in the industry, known for providing high-quality products that exceed expectations. This versatile Flash Memory is ideal for a wide range of applications, offering customers unbeatable value, efficiency, and ease of use. Enhance your projects with the superior capabilities of the CAT28F010NA-70T and stay ahead of the competition.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the flash memory, making it suitable for industrial environments.

Nominal Supply Voltage: 5V

Stable supply voltage ensures reliable performance and operation of the flash memory chip.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for independent communication and control, enhancing flexibility and efficiency.

Memory Density: 1048576 bit

High memory density allows for storing large amounts of data in a compact chip, making it ideal for various applications.

Maximum Operating Temperature: 105 °C

Wide operating temperature range ensures the flash memory chip can withstand harsh environmental conditions.

No. of Words: 131072 words

Large number of words enables storing extensive data and information, catering to diverse storage needs.

Technology: CMOS

CMOS technology offers low power consumption and high-speed operation, making the flash memory chip energy-efficient and reliable.

Parallel or Serial: PARALLEL

Parallel communication allows for faster data transfer and processing speed, suitable for demanding applications.

Technical Specifications

Flash Memory CAT28F010NA-70T attributes and parameters. Explore more Flash Memory devices from Onsemi

Specs

Maximum Access Time:

70 ns

Additional Features:

100000 PROGRAM/ERASE CYCLES; DATA RETENTION = 10 YEARS

Minimum Data Retention Time:

10

JESD-30 Code:

R-PQCC-J32

JESD-609 Code:

e0

Length:

13.97 mm

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

32

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

CHIP CARRIER

Parallel or Serial:

PARALLEL

Programming Voltage (V):

12

Qualification:

Not Qualified

Maximum Seated Height:

3.55 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

J BEND

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Type:

NOR TYPE

Width:

11.43 mm

Trade Compliance

CAT28F010NA-70T Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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