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AMIS42675ICAA1RG

Onsemi

AMIS42675ICAA1RG by Onsemi

AMIS42675ICAA1RG by Onsemi is a Network Interface IC with 8 terminals, operating at 5V. It has a data rate of 1 Mbps and is designed for automotive applications. The IC features a small outline package style, Gull Wing terminal form, and operates in temperatures ranging from -40 to 125 °C.

Median Price

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Lifecycle Status

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Chip Stock

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Digiode

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EMSNET

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Semtec, LLC

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AZTECH Wire

Italy . 936 parts In-Stock

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Corohmni

South Africa . 183 parts In-Stock

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Advanced Electronics

New Zealand . 2,000 parts In-Stock

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Kulean Microsystems

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A-Z Elektronik GmbH

Germany . 6,972 parts In-Stock

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SupplyDigital Components

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Problanco Electronics

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Alle Elektronik GmbH

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Infinite Electronics LLP (Excess)

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Overview

Unlock seamless communication with the AMIS42675ICAA1RG from Onsemi. Designed with precision and reliability in mind, this network interface module offers unparalleled performance for a wide range of applications. From automotive to industrial settings, this small outline package delivers a powerful 1 Mbps data rate with minimal power consumption. Trust Onsemi's expertise in telecom ICs to elevate your connectivity solutions. Experience the difference with the AMIS42675ICAA1RG - where quality meets efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, ideal for applications where weight and reliability are important factors.

Surface Mount: YES

Being surface mountable makes the product easy to install on circuit boards, saving space and simplifying the overall design.

Power Supplies (V): 5

The 5V power supply requirement is a standard voltage level, making it compatible with a wide range of electronic devices and systems.

Data Rate: 1 Mbps

With a data rate of 1 Mbps, this product offers sufficient speed for many networking applications while remaining cost-effective.

Temperature Grade: AUTOMOTIVE

The automotive temperature grade ensures that the product can withstand harsh operating conditions commonly found in automotive environments, making it suitable for automotive networking applications.

Technical Specifications

Network Interfaces AMIS42675ICAA1RG attributes and parameters. Explore more Network Interfaces devices from Onsemi

Specs

Data Rate:

1 Mbps

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Length:

4.9276 mm

Moisture Sensitivity Level (MSL):

2

No. of Functions:

1

No. of Terminals:

8

No. of Transceivers:

1

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

1.7272 mm

Sub-Category:

Network Interfaces

Maximum Supply Current:

.065 mA

Nominal Supply Voltage:

5 V

Surface Mount:

YES

Telecom IC Type:

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3.937 mm

Trade Compliance

AMIS42675ICAA1RG Telecommunications trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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