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AMIS30660CANH2G

Onsemi

AMIS30660CANH2G by Onsemi

AMIS30660CANH2G by Onsemi is a Network Interface IC with 8 terminals, operating at 5V. It has a data rate of 1 Mbps and is designed for automotive applications. The package style is small outline, with a temperature range from -40 to 125°C, making it suitable for various industrial environments.

Median Price

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Lifecycle Status

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4

In-Stock Inventory

1k+

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Vyrian

USA . 3,491 parts In-Stock

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VNN

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Digiode

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Nova Conductors

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AZTECH Wire

Italy . 255 parts In-Stock

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$10.446

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Aztec Data Supply Inc.

USA . 100 parts In-Stock

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$13.283

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Ampacity Inc.

Singapore . 557 parts In-Stock

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Authorized Procurement Solutions

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SupplyDigital Components

Austria . 5,047 parts In-Stock

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Continental Prestige Electronics

USA . 4,462 parts In-Stock

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Lixinc

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Problanco Electronics

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TANS Electronics

Latvia . 2,745 parts In-Stock

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Perfect Parts

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Argo Parts USA

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Corphita

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Kulean Microsystems

USA . 727 parts In-Stock

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UHIMA Technologies

Türkiye . 339 parts In-Stock

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Microchip USA

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Corohmni

South Africa . 64 parts In-Stock

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Aranea Global

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Overview

Enhance your automotive electronic designs with the AMIS30660CANH2G by Onsemi. This high-quality network interface offers reliability and efficiency, backed by the reputable manufacturer, Onsemi. Ideal for a wide range of applications, this product provides seamless integration and optimal performance. Experience the value and benefits of this innovative solution, delivering unmatched advantages to customers seeking top-notch connectivity solutions. Elevate your projects with the AMIS30660CANH2G and unlock a world of possibilities in automotive electronics.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material makes the product lightweight and durable, ideal for use in various applications.

Surface Mount: YES

Surface mount capability allows for easy and convenient installation on circuit boards, saving time and effort.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature of 125°C, the product can withstand harsh environmental conditions without compromising performance.

Data Rate: 1 Mbps

A data rate of 1 Mbps ensures fast and efficient data transmission, making it suitable for high-speed networking applications.

Nominal Supply Voltage: 5 V

Operating at a nominal supply voltage of 5V, this product is compatible with standard power sources, making it easy to integrate into existing systems.

Technical Specifications

Network Interfaces AMIS30660CANH2G attributes and parameters. Explore more Network Interfaces devices from Onsemi

Specs

Data Rate:

1 Mbps

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Length:

4.9276 mm

Moisture Sensitivity Level (MSL):

2

No. of Functions:

1

No. of Terminals:

8

No. of Transceivers:

1

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

1.7272 mm

Sub-Category:

Network Interfaces

Maximum Supply Current:

.065 mA

Nominal Supply Voltage:

5 V

Surface Mount:

YES

Telecom IC Type:

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3.937 mm

Trade Compliance

AMIS30660CANH2G Telecommunications trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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