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AMIS30660CANH6G

Onsemi

AMIS30660CANH6G by Onsemi

AMIS30660CANH6G by Onsemi is a Network Interface IC with 8 terminals, operating at 5V. It has a data rate of 1 Mbps and is designed for automotive applications. The package style is small outline, with peak reflow temperature of 260 °C and terminal finish in palladium gold.

Median Price

$1.110

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 3,992 parts In-Stock

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$1.110

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3,992

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Flip Electronics (Authorized)

USA . 3,992 parts In-Stock

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3,992

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Vyrian

USA . 5,696 parts In-Stock

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5,696

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Flip Electronics

USA . 3,992 parts In-Stock

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3,992

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Digiode

USA . 437 parts In-Stock

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437

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Distributors (Availability)

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Corohmni

South Africa . 60 parts In-Stock

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$1.340

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60

$1.340

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AZTECH Wire

Italy . 713 parts In-Stock

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$15.170

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713

$15.170

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Native Components

USA . 286 parts In-Stock

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$27.360

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286

$27.360

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Northwest PG Solutions

USA . 1,321 parts In-Stock

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$30.096

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$27.086

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1,321

$30.096

$27.086

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Component Stockers USA

USA . 794 parts In-Stock

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$99.990

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794

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SupplyDigital Components

Austria . 7,466 parts In-Stock

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TANS Electronics

Latvia . 7,277 parts In-Stock

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Problanco Electronics

Mexico . 6,197 parts In-Stock

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UHIMA Technologies

Türkiye . 823 parts In-Stock

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823

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Perfect Parts

USA . 645 parts In-Stock

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Corphita

USA . 477 parts In-Stock

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Microchip USA

USA . 375 parts In-Stock

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Kulean Microsystems

USA . 167 parts In-Stock

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Overview

Enhance your automotive applications with the AMIS30660CANH6G by Onsemi, a top-of-the-line network interface that delivers unparalleled quality and reliability. Manufactured by Onsemi, a trusted leader in semiconductor technology, this product offers seamless integration, efficient power supplies, and exceptional performance in a compact package. Elevate your designs with the cutting-edge technology of this interface circuit, providing customers with unmatched value and superior functionality. Experience the benefits of precision engineering and innovative solutions with the AMIS30660CANH6G, setting new standards in the industry.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and helps in protecting the internal components from external elements, making this product long-lasting and reliable.

Surface Mount: YES

Surface mount technology makes installation easier and allows for efficient use of PCB space, making this product suitable for compact designs.

Power Supplies (V): 5

Operating at 5V makes this product compatible with a wide range of devices and power sources, increasing its versatility.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature of 125 °C, this product can withstand harsh environmental conditions and perform reliably in various industrial settings.

Data Rate: 1 Mbps

With a high data rate of 1 Mbps, this product can handle fast and efficient data transfer, making it suitable for high-speed networking applications.

Technical Specifications

Network Interfaces AMIS30660CANH6G attributes and parameters. Explore more Network Interfaces devices from Onsemi

Specs

Data Rate:

1 Mbps

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Length:

4.9276 mm

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

8

No. of Transceivers:

1

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

1.7272 mm

Sub-Category:

Network Interfaces

Maximum Supply Current:

.065 mA

Nominal Supply Voltage:

5 V

Surface Mount:

YES

Telecom IC Type:

Temperature Grade:

Terminal Finish:

PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3.937 mm

Trade Compliance

AMIS30660CANH6G Telecommunications trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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