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74HC7403D-Q100,518

NXP Semiconductors

74HC7403D-Q100,518 by NXP Semiconductors

74HC7403D-Q100,518 by NXP is a CMOS FIFO memory with a 64x4 organization, operating asynchronously at up to 12 MHz. It features a wide temperature range from -40 °C to 125 °C and supports automotive applications with AEC-Q100 screening. This compact, surface-mount device ensures efficient data handling in demanding environments.

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3

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1k+

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Vyrian

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Digiode

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Microchip USA

USA . 454 parts In-Stock

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Advanced Electronics

New Zealand . 2,072 parts In-Stock

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AZTECH Wire

Italy . 539 parts In-Stock

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One Stop Electronics

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Native Components

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Northwest PG Solutions

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Overview

Elevate your design projects with the 74HC7403D-Q100,518 from NXP Semiconductors, a trusted leader in high-quality automotive solutions. This asynchronous FIFO memory device offers remarkable efficiency and reliability, ensuring seamless data handling for demanding applications. Engineered to meet AEC-Q100 standards, it thrives in extreme temperatures, providing you with unparalleled performance and peace of mind. Discover the advantages of superior technology that enhances your innovation today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This durable material ensures protection against environmental factors, making the product reliable for various applications.

Surface Mount: YES

Surface mount technology allows for a compact design and ease of integration into modern devices.

Screening Level: AEC-Q100

Meets automotive quality standards, enhancing reliability and performance in automotive applications.

Package Shape: RECTANGULAR

The rectangular shape optimizes space usage on the PCB, facilitating efficient layout and design.

Operating Mode: ASYNCHRONOUS

Asynchronous operation enables seamless data handling, improving performance in various applications.

Power Supplies: 2/6 V

Flexible power supply options allow for adaptability in different circuit designs.

No. of Terminals: 16

A sufficient number of terminals supports a wide range of connections and functionalities.

Package Style (Meter): SMALL OUTLINE

The small outline package is ideal for space-constrained applications, enhancing design flexibility.

Maximum Operating Temperature: 125 °C

High-temperature tolerance makes this product suitable for demanding environments.

Organization: 64X4

The organization structure enables efficient storage and retrieval of data, catering to various application needs.

Minimum Operating Temperature: -40 °C

Wide temperature range allows for reliable performance in extreme conditions.

Terminal Position: DUAL

Dual terminal positioning enhances PCB layout versatility and connection options.

Maximum Clock Frequency (fCLK): 12 MHz

Speed capabilities of 12 MHz facilitate high-speed data processing and transfer.

Maximum Time At Peak Reflow Temperature: 30 s

This specification ensures robustness during the soldering process, avoiding thermal damage.

Peak Reflow Temperature: 260 °C

High peak reflow temperature allows compatibility with various assembly processes, increasing production efficiency.

Temperature Grade: AUTOMOTIVE

Designed for automotive applications, ensuring durability and reliability in challenging environments.

Technology: CMOS

CMOS technology provides low power consumption and high noise immunity, making it efficient for various tasks.

Terminal Form: GULL WING

Gull wing terminals facilitate easy soldering and connection, enhancing manufacturing efficiency.

Maximum Supply Current: 1 mA

Low supply current enhances energy efficiency, making it suitable for battery-powered devices.

No. of Words: 64 words

This memory capacity strikes a balance between performance and resource management for various applications.

Memory Width: 4

A memory width of 4 bits allows for efficient data handling and processing.

Terminal Pitch: 1.27 mm

Standard terminal pitch enhances compatibility with a wide range of PCB designs.

No. of Words Code: 64

This indicates a versatile configuration for effective data storage and processing needs.

Moisture Sensitivity Level (MSL): 2

Moderate moisture sensitivity ensures product integrity during storage and handling.

Memory IC Type: OTHER FIFO

The FIFO architecture provides efficient data buffering, suitable for a variety of applications.

Maximum Access Time: 98 ns

Fast access time increases system responsiveness and overall performance.

Technical Specifications

FIFO 74HC7403D-Q100,518 attributes and parameters. Explore more FIFO devices from NXP Semiconductors

Specs

Maximum Access Time:

98 ns

Maximum Clock Frequency (fCLK):

12 MHz

JESD-30 Code:

R-PDSO-G16

Memory IC Type:

Memory Width:

4

Moisture Sensitivity Level (MSL):

2

No. of Terminals:

16

No. of Words:

64 words

No. of Words Code:

64

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64X4

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP16,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Power Supplies (V):

2/6

Qualification:

Not Qualified

Screening Level:

AEC-Q100

Sub-Category:

FIFOs

Maximum Supply Current:

1 mA

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

74HC7403D-Q100,518 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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