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MTP25N10E

Motorola

MTP25N10E by Motorola

MTP25N10E by Motorola is a N-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features 120A IDM, 0.075 ohm RDS(on), and 150W Pd max, making it suitable for high-power circuits. With fast ton of 510ns and toff of 450ns, it ensures efficient operation in various electronic devices.

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Overview

Experience the power of innovation with the Motorola MTP25N10E Power Field Effect Transistor. Manufactured by a trusted name in technology, this N-CHANNEL transistor offers unparalleled quality and reliability. Ideal for switching applications, this transistor provides a seamless performance that exceeds expectations. With a maximum drain current of 25 A and a minimum breakdown voltage of 100 V, this transistor is designed to deliver exceptional results. Explore new possibilities and elevate your projects with the Motorola MTP25N10E.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection to the internal components of the FET, ensuring a longer lifespan.

Polarity or Channel Type: N-CHANNEL

N-Channel FETs typically have lower ON-resistance and higher efficiency compared to P-Channel FETs.

Minimum DS Breakdown Voltage: 100 V

Can handle high voltages, making it suitable for applications where voltage spikes may occur.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for easy reverse current flow prevention, improving efficiency in switching applications.

Maximum Pulsed Drain Current (IDM): 120 A

Capable of handling high current spikes without damage, making it suitable for power switching applications.

Maximum Power Dissipation Ambient: 150 W

Can dissipate heat effectively, allowing for continuous operation at high power levels without overheating.

Maximum Operating Temperature: 175 °C

Can operate in high-temperature environments without performance degradation.

Maximum Turn On Time (ton): 510 ns

Fast turn-on time allows for quick switching, important in applications where speed is critical.

Maximum Turn Off Time (toff): 450 ns

Fast turn-off time minimizes power loss during switching transitions, improving overall efficiency.

Maximum Drain-Source On Resistance: 0.075 ohm

Low ON-resistance results in minimal power loss and high efficiency in switch mode operation.

Maximum Feedback Capacitance (Crss): 300 pF

Low feedback capacitance reduces the risk of oscillations and interference in high-frequency applications.

Technical Specifications

Power Field Effect Transistors (FET) MTP25N10E attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Motorola

Specs

Additional Features:

LEADFORM OPTIONS ARE AVAILABLE

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

100 V

Maximum Drain Current (ID):

25 A

Maximum Drain-Source On Resistance:

.075 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

300 pF

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

150 W

Maximum Pulsed Drain Current (IDM):

120 A

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

450 ns

Maximum Turn On Time (ton):

510 ns

Trade Compliance

MTP25N10E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Motorola

Motorola Solutions, Inc., is an American video equipment, telecommunications equipment, software, systems and services provider that succeeded Motorola, Inc., following the spinoff of the mobile phone division into Motorola Mobility in 2011. The company is headquartered in Chicago, Illinois.

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