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MT29F64G08AECABH1-10:A

Micron Technology

MT29F64G08AECABH1-10:A by Micron Technology

MT29F64G08AECABH1-10:A by Micron Technology is a 8GX8 SLC NAND flash memory with 8K sectors. It operates at temperatures from 0 to 70 °C and has a max access time of 20 ns. Suitable for commercial applications, it features a package style of GRID ARRAY and uses parallel interface with 100 terminals.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,743 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

-

6,743

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-

-

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Digiode

USA . 1,460 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,460

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-

-

-

Nova Conductors

Japan . 23 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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23

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Andel Nordic

Denmark . 4,176 parts In-Stock

1+ parts

$10.556

100+ parts

-

1k+ parts

$10.133

10k+ parts

$10.133

4,176

$10.556

-

$10.133

$10.133

Ampacity Inc.

Singapore . 1,559 parts In-Stock

1+ parts

$16.000

100+ parts

-

1k+ parts

-

10k+ parts

-

1,559

$16.000

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-

-

AZTECH Wire

Italy . 736 parts In-Stock

1+ parts

$18.963

100+ parts

-

1k+ parts

-

10k+ parts

-

736

$18.963

-

-

-

Continental Prestige Electronics

USA . 3,912 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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3,912

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-

-

-

Argo Parts USA

USA . 1,058 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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1,058

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-

-

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Corphita

USA . 704 parts In-Stock

1+ parts

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100+ parts

-

1k+ parts

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10k+ parts

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704

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Bastille Electronics

Australia . 300 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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300

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-

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Microchip USA

USA . 154 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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154

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Overview

Unlock the power of cutting-edge technology with Micron Technology's MT29F64G08AECABH1-10:A Flash Memory. This high-quality product offers unparalleled reliability and performance, making it ideal for a wide range of applications. With its advanced features and innovative design, this flash memory delivers value and benefits that exceed customer expectations. Trust Micron Technology to provide you with the best-in-class solutions for your memory needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides a good balance of durability and cost-effectiveness for the product.

Surface Mount: YES

Allows for easy installation and integration onto circuit boards.

Power Supplies (V): 1.8,3/3.3

Compatible with a variety of power supplies, making it versatile for different systems.

No. of Terminals: 100

Provides ample connectivity options for interfacing with other components.

Maximum Operating Temperature: 70 °C

Ensures reliability in a wide range of operating environments.

Memory Density: 68719476736 bit

High memory density allows for storing a large amount of data efficiently.

Maximum Access Time: 20 ns

Fast access time ensures quick data retrieval for efficient performance.

Technical Specifications

Flash Memory MT29F64G08AECABH1-10:A attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Access Time:

20 ns

Command User Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PBGA-B100

Memory Density:

68719476736 bit

Memory IC Type:

Memory Width:

8

No. of Sectors/Size:

8K

No. of Terminals:

100

No. of Words:

8589934592 words

No. of Words Code:

8G

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

8GX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

BGA

Package Equivalence Code:

BGA100,10X17,40

Package Shape:

Package Style (Meter):

GRID ARRAY

Page Size (words):

8K

Parallel or Serial:

PARALLEL

Power Supplies (V):

1.8,3/3.3

Qualification:

Not Qualified

Ready or Busy:

YES

Sector Size (Words):

1M

Maximum Standby Current:

.00001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

50 mA

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Toggle Bit:

NO

Type:

SLC NAND TYPE

Trade Compliance

MT29F64G08AECABH1-10:A Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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