Loading...

IS43QR16512A-075VBL

Integrated Silicon Solution

IS43QR16512A-075VBL by Integrated Silicon Solution

IS43QR16512A-075VBL by Integrated Silicon Solution is a 512MX16 DDR4 DRAM with 1333 MHz clock frequency. It operates synchronously, supports self-refresh, and has a common I/O type. Ideal for applications requiring high memory density and fast data processing in compact devices.

Median Price

$17.745

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 26 parts In-Stock

1+ parts

$17.745

100+ parts

-

1k+ parts

-

10k+ parts

-

26

$17.745

-

-

-

Vyrian

USA . 3,714 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,714

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 805 parts In-Stock

1+ parts

$5.275

100+ parts

-

1k+ parts

-

10k+ parts

-

805

$5.275

-

-

-

Authorized Procurement Solutions

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,000

-

-

-

-

Overview

Unlock the power of cutting-edge technology with the IS43QR16512A-075VBL by Integrated Silicon Solution. This DDR4 DRAM offers unparalleled quality and reliability, perfect for a wide range of applications. With a nominal supply voltage of 1.2V and a maximum clock frequency of 1333 MHz, this memory module delivers exceptional performance. Whether you're a gamer, creative professional, or business user, the IS43QR16512A-075VBL provides lightning-fast speed and seamless multitasking capabilities. Invest in the future of computing with Integrated Silicon Solution's innovative memory solutions.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and durable, making the product easy to handle and resistant to damage.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures smooth and efficient data transfer, enhancing the overall performance of the product.

Nominal Supply Voltage / Vsup (V): 1.2

Low power consumption at a nominal voltage of 1.2V, making it energy efficient.

Maximum Clock Frequency (fCLK): 1333 MHz

High clock frequency allows for fast data processing and smooth multitasking capabilities.

Memory IC Type: DDR4 DRAM

DDR4 technology offers improved speed and efficiency compared to older versions, enhancing overall system performance.

Technical Specifications

DRAM IS43QR16512A-075VBL attributes and parameters. Explore more DRAM devices from Integrated Silicon Solution

Specs

Access Mode:

MULTI BANK PAGE BURST

Additional Features:

AUTO/SELF REFRESH

Maximum Clock Frequency (fCLK):

1333 MHz

Input/Output Type:

COMMON

Interleaved Burst Length:

4,8

JESD-30 Code:

R-PBGA-B96

Length:

14 mm

Memory Density:

8589934592 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

96

No. of Words:

536870912 words

No. of Words Code:

512M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

95 Cel

Minimum Operating Temperature:

0 Cel

Organization:

512MX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA96,9X16,32

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Sequential Burst Length:

4,8

Maximum Standby Current:

.025 Amp

Maximum Supply Current:

375 mA

Maximum Supply Voltage (Vsup):

1.26 V

Minimum Supply Voltage (Vsup):

1.14 V

Nominal Supply Voltage / Vsup (V):

1.2

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

10 mm

Trade Compliance

IS43QR16512A-075VBL Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.36

SB

8542.32.00.23

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20