Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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SI4286DY-T1-GE3
Vishay Intertechnology
Vishay Intertechnology's SI4286DY-T1-GE3 is a N-channel FET with 2 elements & built-in diode. It has a max drain current of 7A, on-resistance of 0.0325 ohm, and operates in enhancement mode for switching applications. The transistor comes in a small outline package with Gull Wing terminals, suitable for surface mount assembly up to 260°C.
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
40 V
7 A
.0325 ohm
METAL-OXIDE SEMICONDUCTOR
R-PDSO-G8
1
2
8
ENHANCEMENT MODE
150 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
260
N-CHANNEL
2.9 W
Not Qualified
FET General Purpose Power
YES
GULL WING
DUAL
30
SWITCHING
SILICON
2N6660JTX02
Vishay Intertechnology's 2N6660JTX02 is a N-CHANNEL FET with 60V DS breakdown voltage and 0.99A max drain current. Ideal for amplifier applications, it features a built-in diode, 3 ohm max on resistance, and operates in enhancement mode at up to 150°C.
SINGLE WITH BUILT-IN DIODE
60 V
.99 A
3 ohm
10 pF
TO-205AD
O-MBCY-W3
3
METAL
ROUND
CYLINDRICAL
NOT SPECIFIED
6.25 W
FET General Purpose Powers
NO
WIRE
BOTTOM
AMPLIFIER
SI4090DY-T1-GE3
SI4090DY-T1-GE3 by Vishay Intertechnology is a N-channel FET with 100V DS breakdown voltage, 0.01 ohm RDS(on), and 19.7A ID. Ideal for switching applications, it features a single configuration with built-in diode in a small outline package suitable for surface mount assembly.
100 V
19.7 A
.01 ohm
MS-012AA
Pure Matte Tin (Sn) - annealed
SI2392DS-T1-GE3
SI2392DS-T1-GE3 by Vishay Intertechnology is a N-channel FET with 100V DS breakdown voltage, 3.1A max drain current, and 0.126 ohm max on resistance. Ideal for switching applications due to its single configuration with built-in diode and enhancement mode operation. Package style is small outline, surface mountable with Gull Wing terminals.
3.1 A
.126 ohm
TO-236AB
R-PDSO-G3
e3
Matte Tin (Sn)
SI2392ADS-T1-GE3
SI2392ADS-T1-GE3 by Vishay Intertechnology is a N-channel FET with 100V DS breakdown voltage and 3.1A max drain current. Ideal for switching applications, it operates in enhancement mode with 0.126 ohm max on-resistance. The small outline package features gull wing terminals and can withstand temperatures from -55 to 150°C.
14 pF
-55 Cel
2.5 W
2N7002-E3
2N7002-E3 by Vishay Intertechnology is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.115A Drain Current, and 7.5 ohm On Resistance. Ideal for small outline applications requiring high power dissipation up to 0.2W in enhancement mode operation at temperatures up to 150°C.
SINGLE
.115 A
7.5 ohm
5 pF
.2 W
MATTE TIN
2N4392-E3
2N4392-E3 by Vishay Intertechnology is a N-CHANNEL FET with 3 terminals, operating in DEPLETION MODE. It has a max power dissipation of 1.8W and drain-source on resistance of 60 ohm. Ideal for SWITCHING applications due to its low feedback capacitance of 3.5pF and temperature range from -55°C to 200°C.
LOW INSERTION LOSS
GATE
60 ohm
JUNCTION
3.5 pF
TO-206AA
DEPLETION MODE
200 Cel
1.8 W
Other Transistors
2N4117A-E3
Vishay Intertechnology's 2N4117A-E3 is a N-CHANNEL FET with DEPLETION MODE operation. It has a max power dissipation of 0.3W and feedback capacitance of 1.5pF, making it ideal for AMPLIFIER applications. The transistor features a METAL package body, ROUND shape, and WIRE terminals for efficient performance up to 175°C.
LOW NOISE
1.5 pF
TO-206AF
O-MBCY-W4
4
175 Cel
.3 W
SI1034X-T1-GE3
Vishay Intertechnology's SI1034X-T1-GE3 is a N-channel FET with 2 elements and built-in diode, ideal for switching applications. It features a min DS breakdown voltage of 20V, max drain current of 0.18A, and max power dissipation of 0.28W. This small outline transistor operates in enhancement mode at temperatures up to 150°C.
LOW THRESHOLD
20 V
.18 A
5 ohm
R-PDSO-F6
6
.28 W
FLAT
SI2303BDS-T1-GE3
SI2303BDS-T1-GE3 by Vishay Intertechnology is a P-channel FET with 30V DS breakdown voltage and 1.49A max drain current. Ideal for enhancement mode operation in applications requiring small outline, surface mount transistors with built-in diode, such as power management circuits.
30 V
1.49 A
.2 ohm
TO-236
P-CHANNEL
.9 W
SI3433BDV-T1-GE3
SI3433BDV-T1-GE3 by Vishay Intertechnology is a P-CHANNEL FET with 20V DS Breakdown Voltage, 4.3A Drain Current, and 0.042ohm On Resistance. Ideal for small signal applications in electronics due to its SINGLE configuration with built-in diode and ENHANCEMENT MODE operation. Package style is SMALL OUTLINE, suitable for surface mount designs in various electronic devices.
4.3 A
.042 ohm
R-PDSO-G6
2 W
PURE MATTE TIN
SQ2361EES-T1-GE3
The Vishay Intertechnology SQ2361EES-T1-GE3 is a P-CHANNEL FET with 60V DS breakdown voltage and 2.5A max drain current. Ideal for small signal applications, it features a built-in diode, 0.15 ohm max on resistance, and operates in enhancement mode at up to 175°C.
2.5 A
.15 ohm
50 pF
40
2N4393-E3
2N4393-E3 by Vishay Intertechnology is a N-CHANNEL FET with 1.8W power dissipation, -55 to 200 °C operating temp range, and 100 ohm max drain-source resistance. Ideal for switching applications due to its DEPLETION MODE operation and low feedback capacitance of 3.5 pF.
100 ohm
2N6661JTXL02
Vishay Intertechnology's 2N6661JTXL02 is a N-CHANNEL FET with 90V DS Breakdown Voltage, 0.86A ID, and 4Ω RDS. Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation and built-in DIODE. Package style is CYLINDRICAL with METAL-OXIDE SEMICONDUCTOR technology, suitable for high power dissipation up to 6.25W at 150°C.
LOW THRESHOLD, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE
DRAIN
90 V
.86 A
4 ohm
2N6661JTXV02
Vishay Intertechnology's 2N6661JTXV02 is a N-CHANNEL FET with 90V DS breakdown voltage and 0.86A max drain current. Ideal for switching applications, it features a built-in diode, 6.25W power dissipation, and operates in enhancement mode at up to 150°C.
SI2334DS-T1-GE3
SI2334DS-T1-GE3 by Vishay Intertechnology is a N-channel FET with 30V DS breakdown voltage and 4.9A max drain current. Ideal for switching applications, it operates in enhancement mode with 0.044 ohm on-resistance. The transistor comes in a small outline package with gull wing terminals, suitable for surface mount assembly at temperatures up to 150°C.
4.9 A
.044 ohm
1.7 W
SQ2309ES-T1_GE3
The Vishay Intertechnology SQ2309ES-T1_GE3 is a P-CHANNEL FET with 60V DS breakdown voltage and 1.7A max drain current. Ideal for applications requiring small outline, it operates in enhancement mode with 0.335 ohm RDS(on) and features built-in diode in a gull wing package.
1.7 A
.335 ohm
30 pF
SI1865DL-T1-GE3
SI1865DL-T1-GE3 by Vishay Intertechnology is a P-channel FET with 2 elements and 6 terminals. Operating in enhancement mode, it has a max temp of 150°C and 0.215 ohm RDS(on). Ideal for switching applications, this MOSFET features a small outline package with gull wing terminals.
ESD PROTECTION
COMPLEX
.215 ohm
2N6661JTX02
Vishay Intertechnology's 2N6661JTX02 is a N-CHANNEL FET with 90V DS Breakdown Voltage, 0.86A Drain Current, and 6.25W Power Dissipation. Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation and built-in DIODE in a ROUND package with METAL body.
TN0200K-T1-E3
Vishay Intertechnology TN0200K-T1-E3 is a N-CHANNEL FET with 20V DS Breakdown Voltage, 0.73A Drain Current, and 0.5 ohm On Resistance. Ideal for SWITCHING applications in small outline packages with Matte Tin finish.
LOGIC LEVEL COMPATIBLE
SINGLE WITH BUILT-IN DIODE AND RESISTOR
.73 A
.5 ohm
.35 W
SI3457BDV-T1-E3
Vishay Intertechnology's SI3457BDV-T1-E3 is a P-CHANNEL FET with 30V DS Breakdown Voltage, 3.7A Drain Current, and 0.054 ohm On Resistance. Ideal for applications requiring high power dissipation up to 2W in small outline packages, such as portable electronics and power management systems.
3.7 A
.054 ohm
SI3993DV-T1-E3
SI3993DV-T1-E3 by Vishay Intertechnology is a P-CHANNEL FET for SWITCHING applications. It features 30V DS Breakdown Voltage, 1.8A Drain Current, and 0.133 ohm On Resistance. With a PLASTIC/EPOXY body and GULL WING terminals, it operates in ENHANCEMENT MODE at up to 150°C.
1.8 A
.133 ohm
1.15 W
SI4884BDY-T1-GE3
SI4884BDY-T1-GE3 by Vishay Intertechnology is a small signal N-channel FET with a min DS breakdown voltage of 30V and max drain current of 16.5A. It is commonly used in applications requiring high power dissipation and operates at temperatures up to 150°C.
16.5 A
12.4 A
.009 ohm
4.45 W
SI4401DY-T1-GE3
SI4401DY-T1-GE3 by Vishay Intertechnology is a P-CHANNEL FET with 40V DS Breakdown Voltage, 8.7A Drain Current, and 0.0155 ohm On Resistance. Ideal for applications requiring high power dissipation in small outline packages like power management systems and voltage regulators.
8.7 A
.0155 ohm
3 W
2N6660-E3
2N6660-E3 by Vishay Intertechnology is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.99A Drain Current, and 6.25W Power Dissipation. Ideal for AMPLIFIER applications due to its ENHANCEMENT MODE operation and built-in DIODE configuration.
2N6661-E3
Vishay Intertechnology's 2N6661-E3 is a N-CHANNEL FET with 90V DS Breakdown Voltage, 0.86A Drain Current, and 6.25W Power Dissipation. Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation and built-in DIODE. Operating temperature range from -55°C to 150°C makes it versatile for various electronic designs.
e4
SILVER
SI2305DS-T1-E3
SI2305DS-T1-E3 by Vishay Intertechnology is a P-CHANNEL FET with 8V DS Breakdown Voltage, 12A IDM, and 0.052 ohm RDS(ON). Ideal for small outline applications requiring high drain current and low on-resistance in enhancement mode operation.
8 V
3.5 A
.052 ohm
12 A
SI4401DY-T1-E3
SI4401DY-T1-E3 by Vishay Intertechnology is a P-CHANNEL FET with 40V DS Breakdown Voltage, 8.7A ID, and 0.0155 ohm RDS(ON). Ideal for applications requiring high drain current capability in compact designs.
TP0610KL-TR1-E3
TP0610KL-TR1-E3 by Vishay Intertechnology is a P-channel small signal FET with a min DS breakdown voltage of 60V. It is used for switching applications and has a max drain current of 0.27A and a max drain-source on resistance of 6 ohm.
.27 A
6 ohm
TO-226AA
O-PBCY-T3
THROUGH-HOLE
SI6544BDQ-T1-E3
Vishay Intertechnology's SI6544BDQ-T1-E3 is a Small Signal FET with N/P-Channel, 2 elements w/ diode. Features include 30V DS breakdown voltage, 0.032 ohm RDS(on), and 3.7A ID max current. Ideal for applications requiring high efficiency in compact designs like power management systems.
.032 ohm
N-CHANNEL AND P-CHANNEL
20
TP0202K-T1-E3
Vishay Intertechnology's TP0202K-T1-E3 is a P-CHANNEL FET with 30V DS Breakdown Voltage, 0.385A Drain Current, and 1.4 ohm On Resistance. Ideal for SWITCHING applications in small outline packages with GULL WING terminals and ENHANCEMENT MODE operation up to 150°C.
.385 A
1.4 ohm
SI4567DY-T1-E3
SI4567DY-T1-E3 by Vishay Intertechnology is a Small Signal FET with N/P-Channel, 2 elements, built-in diode for switching applications. Features include 40V DS breakdown voltage, 4.7A max drain current, 0.06 ohm max on resistance. Ideal for enhancement mode operation in surface mount designs at up to 150°C.
4.7 A
4.1 A
.06 ohm
2.95 W
SI2303BDS-T1-E3
Vishay Intertechnology's SI2303BDS-T1-E3 is a P-CHANNEL FET with 30V DS Breakdown Voltage and 1.49A Drain Current. Ideal for small outline applications, it operates in Enhancement Mode with 0.2 ohm On Resistance, making it suitable for high temperature environments up to 150°C.
SI4884BDY-T1-E3
SI4884BDY-T1-E3 by Vishay Intertechnology is a N-CHANNEL FET with 30V DS Breakdown Voltage, 16.5A Drain Current, and 0.009 ohm On Resistance. Ideal for SWITCHING applications in ENHANCEMENT MODE, this transistor has a max power dissipation of 4.45W and operates up to 150°C temperature.
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