Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
Add filters
All
Selected
AO4407L
Alpha & Omega Semiconductor
AO4407L by Alpha & Omega Semiconductor is a P-CHANNEL FET used for switching applications. It has a min DS breakdown voltage of 30V, max drain current of 12A, and max operating temperature of 150°C.
SINGLE WITH BUILT-IN DIODE
30 V
12 A
.038 ohm
METAL-OXIDE SEMICONDUCTOR
423 pF
R-PDSO-G8
1
8
ENHANCEMENT MODE
150 Cel
-55 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
P-CHANNEL
3.1 W
YES
GULL WING
DUAL
SWITCHING
SILICON
AO4441L
AO4441L by Alpha & Omega Semiconductor is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features SINGLE configuration with BUILT-IN DIODE and operates in ENHANCEMENT MODE. With 4A ID and 0.1 ohm RDS(on), it offers high performance in a small outline package suitable for various electronic designs.
60 V
4 A
.1 ohm
35 pF
AO3401L
AO3401L by Alpha & Omega Semiconductor is a P-CHANNEL FET with 30V DS Breakdown Voltage and 4.2A ID. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at -55 to 150 °C, featuring 0.05 ohm RDS(on) and 77 pF Crss capacitance.
4.2 A
.05 ohm
77 pF
TO-236
R-PDSO-G3
3
AO3409L
AO3409L by Alpha & Omega Semiconductor is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max ID of 2.6A and 0.13 ohm RDS(ON), operating in the temperature range of -55 to 150 °C. The transistor has a GULL WING terminal form and METAL-OXIDE SEMICONDUCTOR technology, making it suitable for surface mount configurations.
2.6 A
.13 ohm
53 pF
AO3413L
AO3413L by Alpha & Omega Semiconductor is a P-CHANNEL FET with 20V DS Breakdown Voltage and 3A ID. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at -55 to 150°C. Featuring a 0.097 ohm RDS(ON) and 49pF Crss, this MOSFET is designed for surface mount with GULL WING terminals.
20 V
3 A
.097 ohm
49 pF
AO3419L
AO3419L by Alpha & Omega Semiconductor is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max ID of 3.5A and 0.075 ohm RDS(ON), operating in the temperature range of -55 to 150 °C. The transistor has a GULL WING terminal form, RECTANGULAR package shape, and METAL-OXIDE SEMICONDUCTOR technology.
3.5 A
.075 ohm
62 pF
AO4407AL
AO4407AL by Alpha & Omega Semiconductor is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max ID of 12A, 0.013 ohm RDS(ON), and 295pF Crss. Operating from -55 to 150 °C, this MOSFET has GULL WING terminals in an 8-terminal SMALL OUTLINE package.
.013 ohm
295 pF
AO4485L
AO4485L by Alpha & Omega Semiconductor is a P-CHANNEL FET with 40V DS Breakdown Voltage and 10A ID. It's used for SWITCHING applications in ENHANCEMENT MODE, featuring 0.015 ohm RDS(ON) and 180pF Crss.
40 V
10 A
.015 ohm
180 pF
1.7 W
AO4447AL
AO4447AL by Alpha & Omega Semiconductor is a P-CHANNEL FET with 30V DS Breakdown Voltage, 17A ID, and 0.007 ohm RDS(ON). Ideal for SWITCHING applications, it features a SINGLE configuration with built-in diode and resistor. Operating in ENHANCEMENT MODE, this MOSFET has a max temp of 150°C and -55°C min temp.
SINGLE WITH BUILT-IN DIODE AND RESISTOR
17 A
.007 ohm
564 pF
AO3401AL
AO3401AL by Alpha & Omega Semiconductor is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features SINGLE configuration with BUILT-IN DIODE and GULL WING terminals. Operating in ENHANCEMENT MODE, it has a max ID of 4.3A and RDS(on) of 0.044 ohm, making it suitable for various small outline surface mount designs.
4.3 A
.044 ohm
81 pF
1.4 W
BSS84PWL6327
Infineon Technologies
BSS84PWL6327 by Infineon is a P-CHANNEL FET with 60V DS breakdown voltage and 0.15A max drain current. Ideal for small outline applications, it features a built-in diode, 8 ohm max on resistance, and operates in enhancement mode at up to 150°C.
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
.15 A
8 ohm
3.8 pF
e3
260
.3 W
Not Qualified
Other Transistors
Matte Tin (Sn)
40
RW1E025RPT2CR
ROHM
ROHM's RW1E025RPT2CR is a P-CHANNEL FET with 30V DS breakdown voltage, ideal for SWITCHING applications. It features a max ID of 2.5A, 0.075 ohm RDS(on), and operates in ENHANCEMENT MODE. With a small outline package style and peak reflow temp of 260°C, it offers efficient performance in various electronic devices.
2.5 A
R-PDSO-F6
e2
6
.7 W
TIN COPPER
FLAT
10
N0302P-T1-AT
Renesas Electronics
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; No. of Elements: 1; Maximum Drain Current (ID): 4.4 A;
4.4 A
.15 ohm
R-PDSO-F3
NOT SPECIFIED
1.3 W
NTR1P02LT1H
Onsemi
NTR1P02LT1H by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features SINGLE configuration with BUILT-IN DIODE and can handle up to 1.3A Drain Current. This ENHANCEMENT MODE transistor comes in a RECTANGULAR package with GULL WING terminals, suitable for surface mount technology.
1.3 A
MATTE TIN
30
DMP210DUFB4-7B
Diodes Incorporated
DMP210DUFB4-7B by Diodes Inc. is a P-CHANNEL FET with 20V DS Breakdown Voltage, 0.2A Drain Current, and 5.5 ohm On Resistance. Ideal for SWITCHING applications in ENHANCEMENT MODE, it's a surface mount chip carrier with Ni/Pd/Au finish, operating up to 150°C.
HIGH RELIABILITY, LOW THRESHOLD
DRAIN
.2 A
.14 A
5.5 ohm
20 pF
R-PBCC-N3
e4
CHIP CARRIER
.35 W
Nickel/Palladium/Gold (Ni/Pd/Au)
NO LEAD
BOTTOM
DMP1096UCB4-7
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .82 W; Maximum Drain Current (Abs) (ID): 2.6 A; Maximum Drain-Source On Resistance: .152 ohm;
HIGH RELIABILITY
12 V
2.4 A
.152 ohm
S-PBGA-B4
e1
4
SQUARE
GRID ARRAY
.82 W
TIN SILVER COPPER
BALL
DMP3008SFG-13
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.2 W; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 1;
8.6 A
7.1 A
.025 ohm
S-PDSO-N5
5
2.2 W
DMG3415U-13
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .9 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Elements: 1;
.0425 ohm
.9 W
AEC-Q101
VP0550N3-G-P013
Microchip Technology
VP0550N3-G-P013 by Microchip Technology is a P-CHANNEL FET with 500V DS Breakdown Voltage. It's used for SWITCHING applications, featuring 0.054A ID and 125Ω RDS(on). The transistor has a built-in diode, operates in ENHANCEMENT MODE, and has 10pF Crss.
500 V
.054 A
125 ohm
10 pF
TO-92
O-PBCY-T3
ROUND
CYLINDRICAL
NO
THROUGH-HOLE
BSS84DWQ-7
BSS84DWQ-7 by Diodes Inc. is a P-channel FET with 50V breakdown voltage, ideal for switching applications. It features 2 elements with built-in diode in a small outline package, operating in enhancement mode at max 150°C. With 0.13A drain current and 10Ω on resistance, it offers reliable performance in various electronic circuits.
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
50 V
.13 A
10 ohm
12 pF
R-PDSO-G6
2
DMP2004KQ-7
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .55 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Body Material: PLASTIC/EPOXY;
.6 A
.9 ohm
.55 W
NTLUS3A18PZTAG
NTLUS3A18PZTAG by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, 8.2A Drain Current, and 0.018 ohm On Resistance. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a SQUARE package suitable for SURFACE MOUNT technology.
ULTRA LOW RESISTANCE
8.2 A
5.1 A
.018 ohm
S-PDSO-N6
3.8 W
NTLUS3A18PZTBG
NTLUS3A18PZTBG by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, 8.2A Drain Current, and 0.018 ohm On Resistance. Ideal for SWITCHING applications in small outline packages, it operates in ENHANCEMENT MODE at up to 150 °C temperature.
DMP2100UCB9-7
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 2; Transistor Application: SWITCHING; No. of Terminals: 9;
.0175 ohm
55 pF
S-PBGA-B9
9
DMP2540UCB9-7
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: BALL; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 30;
25 V
.06 ohm
90 pF
TPC8111(TE12L,Q,M)
Toshiba
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: DUAL; No. of Terminals: 8; Minimum DS Breakdown Voltage: 30 V;
11 A
NTTFS3A08PZTAG
NTTFS3A08PZTAG by Onsemi is a P-CHANNEL FET with 22A max drain current and 4.9W power dissipation. Ideal for applications requiring high power handling in surface mount configurations, such as automotive electronics and power management systems.
SINGLE
22 A
4.9 W
NVGS3443T1G
NVGS3443T1G by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max ID of 4.4A and 0.065 ohm Drain-Source Resistance, operating in ENHANCEMENT MODE at up to 150 °C. This SMALL OUTLINE transistor with GULL WING terminals is designed for high power dissipation and AEC-Q101 compliance.
2.2 A
.065 ohm
2 W
NVMD6P02R2G
The Onsemi NVMD6P02R2G is a P-CHANNEL FET with 7.8A max drain current and 2W max power dissipation. Ideal for applications requiring high power handling in surface mount configurations, such as automotive electronics and power management systems.
7.8 A
NTNS3A65PZT5G
NTNS3A65PZT5G by Onsemi is a P-CHANNEL FET with max drain current of 0.281A and power dissipation of 0.218W. Ideal for applications requiring high temperature resistance up to 150°C, such as in surface mount configurations for electronic devices.
.281 A
.218 W
NICKEL PALLADIUM GOLD
NTLUD3A50PZTAG
NTLUD3A50PZTAG by Onsemi is a P-CHANNEL FET with 4.4A max drain current and 2.2W max power dissipation. Ideal for applications requiring high temperature resistance up to 150 °C, such as automotive electronics and industrial control systems.
NTLUD3A50PZTBG
NTLUD3A50PZTBG by Onsemi is a P-CHANNEL FET with 4.4A max drain current and 2.2W max power dissipation. Ideal for small signal applications, it operates at up to 150 °C and features surface mount technology, making it suitable for various electronic devices.
NTZS3151PT1H
NTZS3151PT1H by Onsemi is a P-CHANNEL FET with 0.86A max drain current and 0.21W power dissipation. Ideal for applications requiring surface mount technology, it operates at up to 150 °C and features metal-oxide semiconductor technology.
.86 A
.21 W
TIN
DMP2225LQ-7
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.08 W; No. of Elements: 1; Maximum Drain Current (ID): 2.6 A;
1.08 W
NTLUS3A18PZCTAG
NTLUS3A18PZCTAG by Onsemi is a P-CHANNEL FET with 8.2A max drain current and 3.8W max power dissipation. Ideal for applications requiring high power handling in surface mount configurations, such as automotive electronics and industrial control systems.
NTLUS3A18PZCTBG
NTLUS3A18PZCTBG by Onsemi is a P-CHANNEL FET with 8.2A max drain current and 3.8W power dissipation. Ideal for applications requiring high-power handling in surface-mount configurations, such as automotive electronics or power management systems.
SFT1345-TL-H
The Onsemi SFT1345-TL-H is a P-CHANNEL FET with 11A max drain current and 35W max power dissipation. Ideal for surface mount applications, it features metal-oxide semiconductor technology and tin bismuth terminal finish.
e6
35 W
TIN BISMUTH
BSO130P03SNTMA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Maximum Drain Current (ID): 9.2 A; Peak Reflow Temperature (C): NOT SPECIFIED;
9.2 A
870 pF
BSL215PL6327HTSA1
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Qualification: Not Qualified; Terminal Form: GULL WING; JESD-30 Code: R-PDSO-G6;
AVALANCHE RATED
1.5 A
128 pF
BSL308PEL6327HTSA1
Infineon's BSL308PEL6327HTSA1 is a P-CHANNEL FET with 2 elements, built-in diode, and 30V DS breakdown voltage. Ideal for small outline applications, it operates in enhancement mode with max ID of 2.1A and 0.08Ω RDS(on), featuring a max temp of 150°C.
LOGIC LEVEL COMPATIBLE
2.1 A
.08 ohm
7.8 pF
BSL315PL6327HTSA1
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Package Shape: RECTANGULAR; Operating Mode: ENHANCEMENT MODE;
84 pF
BSR315PL6327HTSA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): .62 A; Minimum DS Breakdown Voltage: 60 V; JESD-30 Code: R-PDSO-G3;
.62 A
.8 ohm
30 pF
BSR316PL6327HTSA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-609 Code: e3; Operating Mode: ENHANCEMENT MODE; Maximum Drain-Source On Resistance: 1.8 ohm;
.36 A
1.8 ohm
BSR92PL6327HTSA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Peak Reflow Temperature (C): NOT SPECIFIED; Transistor Element Material: SILICON; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
250 V
11 ohm
8 pF
BSL314PEL6327HTSA1
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: .14 ohm; No. of Elements: 2; Maximum Drain Current (ID): 1.5 A;
.14 ohm
11 pF
BSD314SPEH6327XTSA1
Infineon's BSD314SPEH6327XTSA1 is a P-CHANNEL FET with 30V DS Breakdown Voltage. It features SINGLE configuration with BUILT-IN DIODE, suitable for ENHANCEMENT MODE applications. With 0.5W power dissipation and -55 to 150 °C operating range, it meets AEC-Q101 standards for automotive use.
.5 W
2SJ360(TE12L,F)
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Minimum DS Breakdown Voltage: 60 V; Maximum Drain Current (ID): 1 A;
1 A
1.2 ohm
TO-243AA
R-PSSO-F3
1.5 W
MCH3375-TL-H
MCH3375-TL-H by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage, 1.6A Drain Current, and 0.295 ohm On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max temp of 150°C. Package: PLASTIC/EPOXY, Surface Mountable RECTANGULAR shape with FLAT terminals.
1.6 A
.295 ohm
.8 W
© 2023 All rights reserved
