Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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DMN3029LFG-13
Diodes Incorporated
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1 W; Maximum Drain-Source On Resistance: .0186 ohm; Maximum Drain Current (ID): 5.3 A;
HIGH RELIABILITY
DRAIN
SINGLE WITH BUILT-IN DIODE
30 V
8 A
5.3 A
.0186 ohm
METAL-OXIDE SEMICONDUCTOR
S-PDSO-N5
e3
1
5
ENHANCEMENT MODE
150 Cel
PLASTIC/EPOXY
SQUARE
SMALL OUTLINE
260
N-CHANNEL
1 W
FET General Purpose Power
YES
MATTE TIN
NO LEAD
DUAL
30
SWITCHING
SILICON
TN0620N3-G-P014
Microchip Technology
Microchip TN0620N3-G-P014 is a N-CHANNEL FET with 200V DS breakdown voltage, ideal for switching applications. Features include single configuration with built-in diode, 1W power dissipation, and -55 to 150°C operating temperature range. Its cylindrical package makes it suitable for through-hole mounting.
200 V
.25 A
6 ohm
35 pF
TO-92
O-PBCY-T3
3
-55 Cel
ROUND
CYLINDRICAL
NO
THROUGH-HOLE
BOTTOM
SCH1330-TL-H
Onsemi
SCH1330-TL-H by Onsemi is a P-CHANNEL FET with 1.5A max drain current and 1W max power dissipation. Ideal for surface mount applications, it operates at up to 150 °C making it suitable for various electronic devices requiring high temperature resistance.
SINGLE
1.5 A
e6
P-CHANNEL
Other Transistors
TIN BISMUTH
SCH1332-TL-H
SCH1332-TL-H by Onsemi is a P-CHANNEL FET with 2.5A max drain current and 1W power dissipation. Ideal for surface mount applications, it operates up to 150 °C, making it suitable for various electronic devices requiring high-performance transistors.
2.5 A
SCH1343-TL-H
SCH1343-TL-H by Onsemi is a P-CHANNEL FET with 3.5A max drain current and 1W power dissipation. Ideal for applications requiring high temperature tolerance up to 150 °C, it features surface mount configuration for compact designs in electronics.
3.5 A
Tin/Bismuth (Sn/Bi)
SCH1345-TL-H
SCH1345-TL-H by Onsemi is a P-CHANNEL FET with 4.5A max drain current and 1W max power dissipation. Ideal for applications requiring high temperature resistance up to 150 °C, such as in surface mount configurations for electronic devices.
4.5 A
CPH3459-TL-W
CPH3459-TL-W by Onsemi is a N-CHANNEL FET with 0.5A max drain current and 1W max power dissipation. Ideal for surface mount applications, it operates up to 150°C and features metal-oxide semiconductor technology. Suitable for various electronic devices requiring efficient power management in compact designs.
.5 A
CPH3362-TL-W
CPH3362-TL-W by Onsemi is a P-CHANNEL FET with 100V DS breakdown voltage and 0.7A max drain current. Ideal for small signal applications, it features a built-in diode, operates in enhancement mode, and has a max power dissipation of 1W. Suitable for surface mount designs in various electronic circuits.
100 V
.7 A
1.7 ohm
7.3 pF
TO-236
R-PDSO-G3
RECTANGULAR
GULL WING
CPH3462-TL-W
CPH3462-TL-W by Onsemi is a N-CHANNEL FET with 100V DS breakdown voltage, 1A max drain current, and 0.785 ohm RDS(on). Ideal for small outline applications requiring high power dissipation up to 1W at 150°C. Suitable for surface mount designs due to its gull wing terminals and built-in diode configuration.
1 A
.785 ohm
CPH3461-TL-H
CPH3461-TL-H by Onsemi is a N-CHANNEL FET with 250V DS breakdown voltage, 0.35A drain current, and 7.2 ohm on resistance. It is used for switching applications in enhancement mode with built-in diode, operating at up to 150 °C. The transistor comes in a small outline package with gull wing terminals for surface mount assembly.
250 V
.35 A
7.2 ohm
BSN254A,126
NXP Semiconductors
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1 W; Qualification: Not Qualified; Package Style (Meter): CYLINDRICAL;
.3 A
7 ohm
15 pF
Not Qualified
MCH3377-TL-W
MCH3377-TL-W by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, 3A Drain Current, and 0.083 ohm On Resistance. Ideal for SWITCHING applications in small outline packages, operating at up to 150°C with ENHANCEMENT MODE technology.
20 V
3 A
.083 ohm
R-PDSO-F3
FLAT
MCH3474-TL-E
MCH3474-TL-E by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 4A ID, and 0.05 ohm RDS. Ideal for SWITCHING applications due to SINGLE configuration with BUILT-IN DIODE. Features ENHANCEMENT MODE operation in SMALL OUTLINE package suitable for surface mount assembly.
4 A
.05 ohm
MCH3477-TL-E
MCH3477-TL-E by Onsemi is a N-CHANNEL FET with 4.5A max drain current and 1W power dissipation. Ideal for surface mount applications, it operates up to 150 °C making it suitable for various electronic circuits requiring high power handling in compact designs.
NTMD6601NR2G
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1 W; No. of Elements: 2; No. of Terminals: 8;
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
80 V
2.2 A
1.1 A
.215 ohm
30 pF
R-PDSO-G8
2
8
TIN
RTR025P02TL
ROHM
ROHM RTR025P02TL is a P-CHANNEL FET with 20V DS Breakdown Voltage, 2.5A ID, and 0.105 ohm RDS(on). Ideal for SWITCHING applications in small outline packages with GULL WING terminals. Operating at up to 150°C, it's suitable for ENHANCEMENT MODE operations requiring high drain current capabilities.
.105 ohm
e1
TIN SILVER COPPER
10
RTR020P02TL
ROHM RTR020P02TL is a P-CHANNEL FET with 20V DS Breakdown Voltage, 2A Drain Current, and 0.15 ohm On Resistance. Ideal for SWITCHING applications in small outline packages with GULL WING terminals. Operating at up to 150°C, it features ENHANCEMENT MODE technology for efficient performance.
2 A
.15 ohm
NTJS3157NT4G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1 W; No. of Terminals: 6; Terminal Form: GULL WING;
3.2 A
.06 ohm
R-PDSO-G6
6
NTJS3157NT4
NTJS3157NT4 by Onsemi is a N-CHANNEL FET with 20V DS Breakdown Voltage, 3.2A Drain Current, and 0.06 ohm On Resistance. Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operating in ENHANCEMENT MODE, it has a max power dissipation of 1W and can withstand temperatures up to 150 °C.
e0
235
TIN LEAD
NTJS3157NT2G
NTJS3157NT2G by Onsemi is a N-CHANNEL FET with 20V DS Breakdown Voltage and 3.2A Drain Current. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating at up to 150°C, this MOSFET has 0.06 ohm On Resistance and Matte Tin Terminal Finish.
NTJS3157NT2
NTJS3157NT2 by Onsemi is a small signal N-channel FET with a min DS breakdown voltage of 20V. It is commonly used for switching applications due to its single configuration with built-in diode and max drain current of 3.2A.
BSS192PE6327
Infineon Technologies
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1 W; Package Style (Meter): SMALL OUTLINE; Additional Features: LOGIC LEVEL COMPATIBLE;
LOGIC LEVEL COMPATIBLE
.19 A
12 ohm
8 pF
R-PSSO-F3
255
AEC-Q101
BSS192PL6327HTSA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1 W; Maximum Operating Temperature: 150 Cel; Package Style (Meter): SMALL OUTLINE;
MCH3486-TL-W
MCH3486-TL-W by Onsemi is a N-CHANNEL FET with 2A max drain current and 1W power dissipation. Ideal for surface mount applications, it operates up to 150 °C and features metal-oxide semiconductor technology. Suitable for various electronic circuits requiring high-performance transistors.
MCH3484-TL-W
MCH3484-TL-W by Onsemi is a N-CHANNEL FET with 20V DS Breakdown Voltage, 4.5A ID, and 0.04 ohm RDS(on). Ideal for small signal applications in electronics due to its 1W power dissipation, ENHANCEMENT MODE operation, and SILICON transistor element material.
.04 ohm
BSS192PH6327XTSA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1 W; No. of Terminals: 3; Minimum Operating Temperature: -55 Cel;
NOT SPECIFIED
MCH3474-TL-W
MCH3474-TL-W by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features SINGLE configuration with BUILT-IN DIODE and 0.05 ohm Drain-Source On Resistance. Operating in ENHANCEMENT MODE, it has 3 terminals and can handle up to 4A of Drain Current.
METAL SEMICONDUCTOR
VEC2315-TL-W
VEC2315-TL-W by Onsemi is a P-CHANNEL FET with 2 elements and built-in diode, ideal for amplifier applications. It features a 60V DS breakdown voltage, 0.137 ohm max RDS(on), and 2.5A max ID. This small outline transistor operates in enhancement mode at up to 150 °C, making it suitable for various electronic circuits.
60 V
.137 ohm
R-PDSO-F8
AMPLIFIER
MCH3383-TL-W
MCH3383-TL-W by Onsemi is a P-CHANNEL FET with 12V DS Breakdown Voltage, 3.5A ID, and 0.069 ohm RDS(on). Ideal for SWITCHING applications in ENHANCEMENT MODE, it operates b/w -55 to 150 °C with a peak reflow temp of 260 °C.
12 V
.069 ohm
CPH3348-TL-W
CPH3348-TL-W by Onsemi is a P-CHANNEL FET with 12V DS Breakdown Voltage, 0.07 ohm RDS(on), and 3A ID. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at up to 150 °C. This SMALL OUTLINE transistor features GULL WING terminals and METAL-OXIDE SEMICONDUCTOR technology.
.07 ohm
VEC2616-TL-W
Onsemi's VEC2616-TL-W is a Small Signal FET with N/P-Channel, 2 elements w/ diode. Operating in enhancement mode, it has 60V DS breakdown voltage and 3A max drain current. Ideal for switching applications, this MOSFET offers 0.08 ohm RDS(on) and can handle up to 1W power dissipation at 150 °C.
.08 ohm
N-CHANNEL AND P-CHANNEL
DMC2450UV-13
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1 W; Minimum DS Breakdown Voltage: 20 V; JESD-609 Code: e3;
ESD PROTECTED
1.03 A
.7 ohm
R-PDSO-F6
RSR010N10HZGTL
ROHM's RSR010N10HZGTL is a N-CHANNEL FET with 100V DS breakdown voltage and 1A max drain current. Ideal for switching applications, it operates in enhancement mode with 0.58 ohm on-resistance. Its GULL WING terminals and AEC-Q101 standard make it suitable for automotive electronics.
.58 ohm
12 pF
CPH3461-TL-W
CPH3461-TL-W by Onsemi is a N-CHANNEL FET with 250V DS Breakdown Voltage, 0.35A Drain Current, and 7.2 ohm On Resistance. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a RECTANGULAR package suitable for surface mount technology. Operating at up to 150 °C, this MOSFET has GULL WING terminals and TIN BISMUTH finish.
TP0606N3-G-P002
Microchip TP0606N3-G-P002 is a P-CHANNEL FET with 60V DS Breakdown Voltage. Ideal for SWITCHING applications, it has 1W Power Dissipation and 3.5 ohm On Resistance. Operating from -55 to 150 °C, it features METAL-OXIDE SEMICONDUCTOR tech in a CYLINDRICAL package.
.32 A
3.5 ohm
TP0606N3-G-P003
Microchip TP0606N3-G-P003 is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 1W Power Dissipation, -55 to 150°C Operating Temperature range, and 3.5 ohm Drain-Source On Resistance.
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