Loading...

150 MHz Small Signal Bipolar Junction Transistors (BJT) 82

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
ZTX1048ASTOB by Diodes Incorporated

ZTX1048ASTOB

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 4 A;

4 A

80 pF

17.5 V

SINGLE

50

R-PSIP-W3

1

3

200 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NPN

1 W

1 W

NO

WIRE

SINGLE

SWITCHING

SILICON

150 MHz

.245 V

ZTX1048ASTOA by Diodes Incorporated

ZTX1048ASTOA

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 4 A;

4 A

80 pF

17.5 V

SINGLE

50

R-PSIP-W3

1

3

200 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NPN

1 W

1 W

NO

WIRE

SINGLE

SWITCHING

SILICON

150 MHz

.245 V

ZTX1048ASTZ by Diodes Incorporated

ZTX1048ASTZ

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 4 A;

4 A

80 pF

17.5 V

SINGLE

50

R-PSIP-W3

e3

1

3

200 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

260

NPN

1 W

1 W

NO

MATTE TIN

WIRE

SINGLE

30

SWITCHING

SILICON

150 MHz

.245 V

2SC2909S-AA by Onsemi

2SC2909S-AA

Onsemi

2SC2909S-AA by Onsemi is a NPN BJT transistor for switching applications. It has a low VCEsat of 0.3V, hFE of 140, and can handle up to 160V. With a max power dissipation of 0.6W, it operates at temperatures up to 150°C.

.07 A

2 pF

160 V

SINGLE

140

O-PBCY-T3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.6 W

.6 W

NO

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

150 MHz

.3 V

BC640-016G by Onsemi

BC640-016G

Onsemi

BC640-016G by Onsemi is a PNP BJT with 3 terminals, max. power dissipation of 1.5W, and max. collector-emitter voltage of 80V. Ideal for applications requiring a min DC current gain of 25 (hFE), it operates at up to 150°C and has a nominal transition frequency of 150MHz.

.5 A

80 V

SINGLE

25

TO-226AA

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

1.5 W

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

SILICON

150 MHz

FMMT491AQTC by Diodes Incorporated

FMMT491AQTC

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Collector Current (IC): 1 A; Peak Reflow Temperature (C): 260;

HIGH RELIABILITY

1 A

40 V

SINGLE

35

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

150 MHz

FZT489QTA by Diodes Incorporated

FZT489QTA

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Collector Current (IC): 1 A; Terminal Finish: MATTE TIN;

HIGH RELIABILITY

COLLECTOR

1 A

30 V

SINGLE

20

R-PDSO-G4

e3

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

SILICON

150 MHz

FMMT491QTC by Diodes Incorporated

FMMT491QTC

Diodes Incorporated

FMMT491QTC by Diodes Inc. is a NPN BJT transistor with 3 terminals, hFE of 30, and max power dissipation of 0.5W. Ideal for small outline applications requiring a collector-emitter voltage of 60V, operating at up to 150°C. AEC-Q101 certified for automotive use with a transition frequency of 150MHz.

HIGH RELIABILITY

1 A

60 V

SINGLE

30

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.5 W

AEC-Q101

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

150 MHz

BCR135E6433HTMA1 by Infineon Technologies

BCR135E6433HTMA1

Infineon Technologies

Infineon's BCR135E6433HTMA1 is a NPN BJT with built-in resistor for switching applications. Features include hFE of 70, VCE of 50V, and fT of 150MHz. Its Gull Wing terminals and small outline make it suitable for surface mount designs in various electronic circuits.

BUILT-IN BIAS RESISTOR RATIO IS 21.3636

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

70

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

Not Qualified

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

150 MHz

BCR142WE6327HTSA1 by Infineon Technologies

BCR142WE6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Collector Current (IC): .1 A; JESD-30 Code: R-PDSO-G3;

BUILT-IN BIAS RESISTOR RATIO IS 2.1363

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

70

R-PDSO-G3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

Not Qualified

YES

MATTE TIN

GULL WING

DUAL

40

SWITCHING

SILICON

150 MHz

BCV29E6327HTSA1 by Infineon Technologies

BCV29E6327HTSA1

Infineon Technologies

NPN; Configuration: DARLINGTON; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Collector Current (IC): .5 A; No. of Elements: 1;

COLLECTOR

.5 A

30 V

DARLINGTON

4000

R-PSSO-F3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

Not Qualified

YES

FLAT

SINGLE

NOT SPECIFIED

SILICON

150 MHz

BCX42E6433HTMA1 by Infineon Technologies

BCX42E6433HTMA1

Infineon Technologies

Infineon BCX42E6433HTMA1 is a PNP BJT transistor for switching applications. Features include hFE of 40, VCE of 125V, and IC of 0.8A. With a fT of 150MHz, it's ideal for small outline surface mount designs requiring high-speed switching capabilities.

.8 A

125 V

SINGLE

40

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

PNP

Not Qualified

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

150 MHz

BCV49E6327HTSA1 by Infineon Technologies

BCV49E6327HTSA1

Infineon Technologies

NPN; Configuration: DARLINGTON; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Collector Current (IC): .5 A; Transistor Element Material: SILICON;

COLLECTOR

.5 A

60 V

DARLINGTON

2000

R-PSSO-F3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

AEC-Q101

YES

FLAT

SINGLE

SILICON

150 MHz

BCR116SH6327XTSA1 by Infineon Technologies

BCR116SH6327XTSA1

Infineon Technologies

BCR116SH6327XTSA1 by Infineon is a NPN BJT transistor with 2 elements and built-in resistor. It has a max collector-emitter voltage of 50V, ideal for switching applications. With a min hFE of 70 and fT of 150MHz, it offers efficient performance in small outline packages for surface mount designs.

BUILT-IN BIAS RESISTOR RATIO 10

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

70

R-PDSO-G6

e3

1

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

150 MHz

BCR116WH6327XTSA1 by Infineon Technologies

BCR116WH6327XTSA1

Infineon Technologies

BCR116WH6327XTSA1 by Infineon Technologies is a NPN BJT with built-in resistor for switching applications. It has a hFE of 70, Vce(max) of 50V, and fT of 150MHz. This small outline transistor is surface mountable with Gull Wing terminals, ideal for compact electronic designs.

BUILT-IN BIAS RESISTOR RATIO 10

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

70

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

150 MHz

BCR119WH6327XTSA1 by Infineon Technologies

BCR119WH6327XTSA1

Infineon Technologies

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 120;

BUILT-IN BIAS RESISTOR

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

120

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

150 MHz

BCR573E6327HTSA1 by Infineon Technologies

BCR573E6327HTSA1

Infineon Technologies

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Collector Current (IC): .5 A; Additional Features: BUILT-IN BIAS RESISTOR RATIO 0.1;

BUILT-IN BIAS RESISTOR RATIO 0.1

.5 A

50 V

SINGLE WITH BUILT-IN RESISTOR

70

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

150 MHz

ZTX453STOB by Zetex Plc

ZTX453STOB

Zetex Plc

ZTX453STOB by Zetex Plc is a NPN BJT transistor with VCEsat of 0.7V, hFE of 10, and IC of 1A. Ideal for switching applications, it has a max operating temp of 200°C and fT of 150MHz. Package style: IN-LINE, terminal finish: MATTE TIN, and package shape: RECTANGULAR.

1 A

15 pF

100 V

SINGLE

10

R-PSIP-W3

e3

1

1

3

200 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NPN

2 W

Not Qualified

NO

MATTE TIN

WIRE

SINGLE

SWITCHING

SILICON

150 MHz

.7 V

ZTX451STOB by Zetex Plc

ZTX451STOB

Zetex Plc

ZTX451STOB by Zetex Plc is a NPN BJT transistor for switching applications. With VCEsat of 0.35V, hFE of 10, and IC of 1A, it operates at max temp of 200°C. Its package style is IN-LINE with 3 terminals and can handle up to 2W power dissipation.

1 A

15 pF

60 V

SINGLE

10

R-PSIP-W3

e3

1

1

3

200 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NPN

2 W

Not Qualified

CECC

NO

MATTE TIN

WIRE

SINGLE

SWITCHING

SILICON

150 MHz

.35 V

ZXTN04120HP5TC by Diodes Incorporated

ZXTN04120HP5TC

Diodes Incorporated

NPN; Configuration: DARLINGTON; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Collector Current (IC): 1.5 A; JESD-609 Code: e3;

HIGH RELIABILITY

COLLECTOR

1.5 A

120 V

DARLINGTON

500

R-PDSO-F3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

MATTE TIN

FLAT

DUAL

30

SWITCHING

SILICON

150 MHz

2SC5001TLQ by ROHM

2SC5001TLQ

ROHM

ROHM 2SC5001TLQ is a NPN BJT transistor with max. power dissipation of 10W, hFE of 120, and fT of 150MHz. Ideal for switching applications in small outline packages due to its high collector current and voltage capabilities.

10 A

20 V

SINGLE

120

R-PSSO-G2

e2

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

10 W

Not Qualified

Other Transistors

YES

TIN COPPER

GULL WING

SINGLE

10

SWITCHING

SILICON

150 MHz

2SC5053T100Q by ROHM

2SC5053T100Q

ROHM

ROHM 2SC5053T100Q is a NPN BJT transistor for switching applications. Features include VCEsat of 0.4V, hFE of 120, and IC of 1A. Suitable for surface mount designs with a max operating temperature of 150°C.

COLLECTOR

1 A

50 V

SINGLE

120

R-PSSO-F3

e2

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

2 W

2 W

Not Qualified

Other Transistors

YES

Tin/Copper (Sn/Cu)

FLAT

SINGLE

10

SWITCHING

SILICON

150 MHz

.4 V

2SD1757KT146R by ROHM

2SD1757KT146R

ROHM

ROHM 2SD1757KT146R is a NPN BJT transistor with max. collector-emitter voltage of 15V, ideal for switching applications. Features include min. DC current gain of 180 and max. operating temp of 150°C. Its small outline package with gull wing terminals makes it suitable for surface mount designs in various electronic circuits.

.5 A

15 V

SINGLE

180

R-PDSO-G3

e1

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.2 W

Not Qualified

Other Transistors

YES

Tin/Silver/Copper (Sn/Ag/Cu)

GULL WING

DUAL

10

SWITCHING

SILICON

150 MHz

2SD1664T100Q by ROHM

2SD1664T100Q

ROHM

ROHM 2SD1664T100Q is a NPN BJT transistor with VCEsat of 0.4V, hFE of 120, and IC of 1A. Ideal for switching applications in small outline packages, it operates up to 150°C with a max voltage of 32V.

COLLECTOR

1 A

32 V

SINGLE

120

R-PSSO-F3

e2

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

2 W

2 W

Not Qualified

Other Transistors

YES

Tin/Copper (Sn/Cu)

FLAT

SINGLE

10

SWITCHING

SILICON

150 MHz

.4 V

DZT3150-13 by Diodes Incorporated

DZT3150-13

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 5 A;

COLLECTOR

5 A

25 V

SINGLE

50

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

2 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

150 MHz

PMEM4010ND,115 by NXP Semiconductors

PMEM4010ND,115

NXP Semiconductors

NPN; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): 1 A;

1 A

40 V

SINGLE WITH BUILT-IN DIODE

200

R-PDSO-G6

e3

1

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.6 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

150 MHz

PMEM4010PD,115 by NXP Semiconductors

PMEM4010PD,115

NXP Semiconductors

PNP; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): 1 A;

1 A

40 V

SINGLE WITH BUILT-IN DIODE

160

R-PDSO-G6

e3

1

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.6 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

150 MHz

PMEM4020AND,115 by NXP Semiconductors

PMEM4020AND,115

NXP Semiconductors

NPN; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): .95 A;

.95 A

40 V

SINGLE WITH BUILT-IN DIODE

200

R-PDSO-G6

e3

1

1

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.6 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

150 MHz

DZT491-13 by Diodes Incorporated

DZT491-13

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

60 V

SINGLE

30

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

150 MHz

DZT591C-13 by Diodes Incorporated

DZT591C-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

60 V

SINGLE

15

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

150 MHz

MMS8550-H-TP by Micro Commercial Components

MMS8550-H-TP

Micro Commercial Components

MMS8550-H-TP by Micro Commercial Components is a PNP BJT with 3 terminals, hFE of 200, and max. power dissipation of 0.3W. Ideal for small outline applications requiring a max. collector-emitter voltage of 25V, operating temp up to 150°C, and transition frequency of 150MHz.

.5 A

25 V

SINGLE

200

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.3 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

10

SILICON

150 MHz

ZTX450-AP by Micro Commercial Components

ZTX450-AP

Micro Commercial Components

ZTX450-AP by Micro Commercial Components is a NPN BJT with hFE of 15, VCEO of 45V, and IC of 1A. Ideal for applications requiring high-speed switching in electronic circuits due to its fT of 150MHz. Package style: cylindrical, terminals: through-hole, making it suitable for various electronic designs.

1 A

45 V

SINGLE

15

TO-92

O-PBCY-T3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

Not Qualified

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

10

SILICON

150 MHz

2PD1820AQ,115 by NXP Semiconductors

2PD1820AQ,115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Collector Current (IC): .5 A; Peak Reflow Temperature (C): NOT SPECIFIED;

.5 A

50 V

SINGLE

85

R-PDSO-G3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

Not Qualified

YES

TIN

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

150 MHz

BF240,112 by NXP Semiconductors

BF240,112

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .025 A;

.025 A

40 V

SINGLE

67

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.35 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

150 MHz

MPS3906,126 by NXP Semiconductors

MPS3906,126

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;

.1 A

5 pF

40 V

SINGLE

100

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

150 MHz

700 ns

100 ns

.4 V

PBSS4140S,126 by NXP Semiconductors

PBSS4140S,126

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Collector Current (IC): 1 A; Package Shape: ROUND;

1 A

40 V

SINGLE

200

TO-92

O-PBCY-T3

e3

NOT APPLICABLE

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NOT SPECIFIED

NPN

Not Qualified

NO

TIN

THROUGH-HOLE

BOTTOM

NOT SPECIFIED

SWITCHING

SILICON

150 MHz

PBSS5140S,126 by NXP Semiconductors

PBSS5140S,126

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Collector Current (IC): 1 A; Package Body Material: PLASTIC/EPOXY;

1 A

40 V

SINGLE

160

TO-92

O-PBCY-T3

e3

NOT APPLICABLE

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NOT SPECIFIED

PNP

Not Qualified

NO

TIN

THROUGH-HOLE

BOTTOM

NOT SPECIFIED

SWITCHING

SILICON

150 MHz

PBSS5140V,115 by NXP Semiconductors

PBSS5140V,115

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): 1 A;

1 A

40 V

SINGLE

160

R-PDSO-F6

e3

1

1

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.3 W

Not Qualified

Other Transistors

YES

TIN

FLAT

DUAL

30

SWITCHING

SILICON

150 MHz

DXT690BP5Q-13 by Diodes Incorporated

DXT690BP5Q-13

Diodes Incorporated

DXT690BP5Q-13 by Diodes Inc. is a NPN BJT transistor with 3 terminals, hFE of 60, and VCE max of 45V. Ideal for switching applications in automotive electronics due to AEC-Q101 compliance and high fT of 150MHz. It comes in a small outline package with matte tin finish for surface mount assembly.

HIGH RELIABILITY

COLLECTOR

3 A

45 V

SINGLE

60

R-PDSO-F3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

MATTE TIN

FLAT

DUAL

30

SWITCHING

SILICON

150 MHz

2SC3279-L-AP by Micro Commercial Components

2SC3279-L-AP

Micro Commercial Components

2SC3279-L-AP by Micro Commercial Components is a NPN BJT with hFE of 140 and fT of 150 MHz. It operates at up to 150°C, handles a max voltage of 10V, and max current of 2A. Ideal for small signal applications in electronics due to its high transition frequency and current capacity.

2 A

10 V

SINGLE

140

TO-92

O-PBCY-W3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

Not Qualified

NO

MATTE TIN

WIRE

BOTTOM

10

SILICON

150 MHz

FMMT491-TP by Micro Commercial Components

FMMT491-TP

Micro Commercial Components

FMMT491-TP by Micro Commercial Components is a NPN BJT transistor with 3 terminals, hFE of 80, and max. power dissipation of 0.5W. Ideal for small signal applications in electronics due to its high transition frequency of 150MHz and max. collector-emitter voltage of 60V.

1 A

60 V

SINGLE

80

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.5 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

10

SILICON

150 MHz

DNLS412E-13 by Diodes Incorporated

DNLS412E-13

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 4 A;

COLLECTOR

4 A

12 V

SINGLE

100

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

150 MHz

FMMT493-TP by Micro Commercial Components

FMMT493-TP

Micro Commercial Components

FMMT493-TP by Micro Commercial Components is a NPN BJT with 100V VCEO, 1A IC, and 150MHz fT. Ideal for small signal applications in electronics due to its compact SMALL OUTLINE package and high DC current gain of min 20 hFE. Suitable for surface mount designs requiring a single configuration transistor.

1 A

100 V

SINGLE

20

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.25 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

10

SILICON

150 MHz

BC488BRL1 by Onsemi

BC488BRL1

Onsemi

BC488BRL1 by Onsemi is a PNP BJT transistor with max. collector-emitter voltage of 60V and max. collector current of 1A. It has a min DC current gain of 15, making it suitable for switching applications due to its high transition frequency of 150MHz. The transistor comes in a cylindrical package with through-hole terminals, ideal for various electronic circuits requiring low-power amplification or signal processing.

EUROPEAN PART NUMBER

1 A

60 V

SINGLE

15

TO-92

O-PBCY-T3

e0

1

3

PLASTIC/EPOXY

ROUND

CYLINDRICAL

235

PNP

Not Qualified

NO

TIN LEAD

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

150 MHz

MSC3930-BT1 by Onsemi

MSC3930-BT1

Onsemi

MSC3930-BT1 by Onsemi is a NPN BJT transistor with hFE of 70, VCE of 20V, and fT of 150MHz. Ideal for amplifier applications, it features a Gull Wing terminal form in a small outline package style for surface mount assembly.

.03 A

20 V

SINGLE

70

R-PDSO-G3

e0

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

NPN

Not Qualified

YES

Tin/Lead (Sn/Pb)

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

150 MHz

BC560CBU by Fairchild Semiconductor

BC560CBU

Fairchild Semiconductor

Fairchild Semiconductor's BC560CBU is a PNP BJT transistor with max. collector-emitter voltage of 45V and max. collector current of 0.1A, ideal for switching applications. With a min. DC current gain of 420 and nominal transition frequency of 150MHz, it offers high performance in a cylindrical package suitable for through-hole mounting.

LOW NOISE

.1 A

45 V

SINGLE

420

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

150 MHz

BC638ZL1G by Onsemi

BC638ZL1G

Onsemi

BC638ZL1G by Onsemi is a PNP BJT with 3 terminals, max. power dissipation of 1.5W, and max. collector-emitter voltage of 60V. Ideal for applications requiring a single configuration transistor with a min DC current gain of 40 (hFE), such as amplifiers or signal processing circuits.

EUROPEAN PART NUMBER

.5 A

60 V

SINGLE

40

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

1.5 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

SILICON

150 MHz

BC640ZL1G by Onsemi

BC640ZL1G

Onsemi

BC640ZL1G by Onsemi is a PNP BJT with 3 terminals, max power dissipation of 1.5W, and max collector-emitter voltage of 80V. Ideal for applications requiring a min DC current gain of 40, such as amplifiers or signal processing circuits due to its high transition frequency of 150MHz.

EUROPEAN PART NUMBER

.5 A

80 V

SINGLE

40

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

1.5 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

SILICON

150 MHz