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150 MHz Small Signal Bipolar Junction Transistors (BJT) 82

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
MPS8599RLRAG by Onsemi

MPS8599RLRAG

Onsemi

MPS8599RLRAG by Onsemi is a PNP BJT transistor with max. collector-emitter voltage of 80V, max. collector current of 0.5A, and min. DC current gain of 75 hFE. It is used in amplifier applications due to its cylindrical package style, through-hole terminals, and silicon element material for high performance amplification at up to 150MHz transition frequency.

.5 A

80 V

SINGLE

75

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

.625 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

150 MHz

PMEM4020APD,115 by NXP Semiconductors

PMEM4020APD,115

NXP Semiconductors

PNP; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): 1.3 A;

1.3 A

40 V

SINGLE WITH BUILT-IN DIODE

50

R-PDSO-G6

e3

1

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.6 W

Not Qualified

Other Transistors

YES

Matte Tin (Sn)

GULL WING

DUAL

SWITCHING

SILICON

150 MHz

BC490G by Onsemi

BC490G

Onsemi

BC490G by Onsemi is a PNP BJT transistor with 3 terminals, ideal for switching applications. It has a max power dissipation of 1.5W, hFE of 15, and can handle up to 80V collector-emitter voltage. With a max operating temp of 150°C and fT of 150MHz, it's suitable for various electronic circuits requiring high-speed switching capabilities.

1 A

80 V

SINGLE

15

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

1.5 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

150 MHz

BC618G by Onsemi

BC618G

Onsemi

BC618G by Onsemi is a NPN Darlington transistor with hFE of 4000, VCE of 55V, and IC of 1A. Ideal for amplifier applications due to its high gain and current capabilities. Its cylindrical package with through-hole terminals makes it suitable for various electronic designs.

1 A

55 V

DARLINGTON

4000

TO-226AA

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

150 MHz

BC638G by Onsemi

BC638G

Onsemi

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): .5 A;

.5 A

60 V

SINGLE

40

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

1.5 W

Not Qualified

Other Transistors

NO

Tin/Silver/Copper (Sn/Ag/Cu)

THROUGH-HOLE

BOTTOM

40

SILICON

150 MHz

BC640G by Onsemi

BC640G

Onsemi

BC640G by Onsemi is a PNP BJT with 3 terminals, max. power dissipation of 1.5W, and hFE of 40. Ideal for applications requiring a max. collector-emitter voltage of 80V, such as amplifiers or signal processing circuits due to its high transition frequency of 150MHz.

.5 A

80 V

SINGLE

40

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

1.5 W

Not Qualified

Other Transistors

NO

Tin/Silver/Copper (Sn/Ag/Cu)

THROUGH-HOLE

BOTTOM

40

SILICON

150 MHz

MPS3638AG by Onsemi

MPS3638AG

Onsemi

MPS3638AG by Onsemi is a PNP BJT transistor with 3 terminals, max power dissipation of 0.625W, and hFE of 20. Ideal for switching applications due to its max collector-emitter voltage of 25V and fast turn-on/off times. With a nominal transition frequency of 150MHz, it offers efficient performance in various electronic circuits.

.5 A

25 V

SINGLE

20

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

.625 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

150 MHz

170 ns

75 ns

MPS8098G by Onsemi

MPS8098G

Onsemi

MPS8098G by Onsemi is a NPN BJT transistor with 3 terminals, ideal for amplifier applications. It has a max power dissipation of 0.625W, max collector-emitter voltage of 60V, and min DC current gain of 75. This through-hole transistor operates up to 150°C and has a nominal transition frequency of 150MHz.

.5 A

60 V

SINGLE

75

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

.625 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

150 MHz

MPS8098RLRAG by Onsemi

MPS8098RLRAG

Onsemi

MPS8098RLRAG by Onsemi is a NPN BJT transistor with 3 terminals, ideal for amplifier applications. It offers a max power dissipation of 0.625W, hFE of 75, and max operating temp of 150 °C. With a max collector-emitter voltage of 60V and max collector current of 0.5A, it's suitable for various electronic circuits.

.5 A

60 V

SINGLE

75

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

.625 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

150 MHz

MPS8099G by Onsemi

MPS8099G

Onsemi

MPS8099G by Onsemi is a NPN BJT transistor with 3 terminals, ideal for amplifier applications. It has a max power dissipation of 0.625W, hFE of 75, and can handle up to 80V collector-emitter voltage. With a transition frequency of 150MHz and operating temp of 150°C, it's suitable for various electronic circuits requiring high-speed switching capabilities.

.5 A

80 V

SINGLE

75

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

.625 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

150 MHz

MPS8099RLRAG by Onsemi

MPS8099RLRAG

Onsemi

MPS8099RLRAG by Onsemi is a NPN BJT transistor with 3 terminals, ideal for amplifier applications. It has a max power dissipation of 0.625W, hFE of 75, and fT of 150MHz. With a max operating temp of 150°C and VCE of 80V, it's suitable for various electronic circuits.

.5 A

80 V

SINGLE

75

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

.625 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

150 MHz

MPS8099RLRMG by Onsemi

MPS8099RLRMG

Onsemi

MPS8099RLRMG by Onsemi is a NPN BJT transistor with 3 terminals and 0.5A max collector current. With hFE of 75, it's ideal for amplifier applications. Operating at up to 150 °C, it has a max power dissipation of 0.625W in a cylindrical package.

.5 A

80 V

SINGLE

75

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

.625 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

150 MHz

MPS8099RLRPG by Onsemi

MPS8099RLRPG

Onsemi

MPS8099RLRPG by Onsemi is a NPN BJT transistor with 3 terminals and max. power dissipation of 0.625W. With hFE of 75, it operates up to 150°C and handles max. collector-emitter voltage of 80V. Ideal for amplifier applications due to its nominal transition frequency of 150MHz in a cylindrical package style.

.5 A

80 V

SINGLE

75

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

.625 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

150 MHz

MPS8598RLRAG by Onsemi

MPS8598RLRAG

Onsemi

MPS8598RLRAG by Onsemi is a PNP BJT transistor with 3 terminals, max. power dissipation of 0.625W, and min. DC current gain of 75. It is used in amplifier applications due to its max. collector-emitter voltage of 60V and nominal transition frequency of 150MHz.

.5 A

60 V

SINGLE

75

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

.625 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

150 MHz

MPS8599G by Onsemi

MPS8599G

Onsemi

MPS8599G by Onsemi is a PNP BJT transistor with 3 terminals, max. power dissipation of 0.625W, and min. DC current gain of 75. It is used in amplifier applications due to its max. collector-emitter voltage of 80V and nominal transition frequency of 150MHz.

.5 A

80 V

SINGLE

75

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

.625 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

150 MHz

DSS4140V-7 by Diodes Incorporated

DSS4140V-7

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): 1 A;

1 A

40 V

SINGLE

75

R-PDSO-F6

e3

1

1

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.6 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

DUAL

30

SILICON

150 MHz

DSS5140V-7 by Diodes Incorporated

DSS5140V-7

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): 1 A;

1 A

40 V

SINGLE

160

R-PDSO-F6

e3

1

1

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.6 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

DUAL

30

SILICON

150 MHz

BC488BRL1G by Onsemi

BC488BRL1G

Onsemi

BC488BRL1G by Onsemi is a PNP BJT transistor with hFE of 15, VCE of 60V, and IC of 1A. Ideal for switching applications due to its high transition frequency of 150MHz. It comes in a cylindrical package with through-hole terminals for easy installation.

1 A

60 V

SINGLE

15

TO-92

O-PBCY-T3

e1

1

3

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

Not Qualified

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

150 MHz

MPS8599RLRMG by Onsemi

MPS8599RLRMG

Onsemi

MPS8599RLRMG by Onsemi is a PNP BJT transistor with max. power dissipation of 0.625W, hFE of 75, and max. operating temp of 150 °C. Ideal for amplifier applications due to its high transition frequency of 150MHz and max collector-emitter voltage of 80V in a cylindrical package shape.

.5 A

80 V

SINGLE

75

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

.625 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

150 MHz

MSC3930-BT1G by Onsemi

MSC3930-BT1G

Onsemi

MSC3930-BT1G by Onsemi is a NPN BJT transistor with hFE of 70, VCE of 20V, and fT of 150MHz. Ideal for amplifier applications, it features a GULL WING terminal form in a small outline package suitable for surface mount assembly.

.03 A

20 V

SINGLE

70

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

Not Qualified

YES

Tin (Sn)

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

150 MHz

DZT955-13 by Diodes Incorporated

DZT955-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 4 A;

COLLECTOR

4 A

140 V

SINGLE

75

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

150 MHz

BCR129SH6327XTSA1 by Infineon Technologies

BCR129SH6327XTSA1

Infineon Technologies

NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Collector Current (IC): .1 A; No. of Elements: 2;

BUILT-IN BIAS RESISTOR

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

120

R-PDSO-G6

e3

1

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

150 MHz

PBSS5140T/ZLR by Nexperia

PBSS5140T/ZLR

Nexperia

PBSS5140T/ZLR by Nexperia is a PNP BJT transistor for switching applications. It has hFE of 160, VCE of 40V, and IC of 1A. With a fT of 150MHz, it comes in a small outline package ideal for surface mount configurations.

1 A

40 V

SINGLE

160

TO-236AB

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

PNP

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

150 MHz

PBSS4240ZX by Nexperia

PBSS4240ZX

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Collector Current (IC): 2 A; Case Connection: COLLECTOR;

COLLECTOR

2 A

40 V

SINGLE

300

R-PDSO-G4

e3

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101; IEC-60134

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

150 MHz

PDTB113ZQAZ by Nexperia

PDTB113ZQAZ

Nexperia

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Collector Current (IC): .5 A; No. of Elements: 1;

BUILT IN BIAS RESISTANCE RATIO IS 10

COLLECTOR

.5 A

50 V

SINGLE WITH BUILT-IN RESISTOR

70

R-PDSO-N3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101; IEC-60134

YES

TIN

NO LEAD

DUAL

30

SWITCHING

SILICON

150 MHz

BCV49H6327XTSA1 by Infineon Technologies

BCV49H6327XTSA1

Infineon Technologies

NPN; Configuration: DARLINGTON; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Collector Current (IC): .5 A; Reference Standard: AEC-Q101;

COLLECTOR

.5 A

60 V

DARLINGTON

2000

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

AEC-Q101

YES

TIN

FLAT

SINGLE

AMPLIFIER

SILICON

150 MHz

BCR35PNH6433XTMA1 by Infineon Technologies

BCR35PNH6433XTMA1

Infineon Technologies

Infineon's BCR35PNH6433XTMA1 is a Small Signal BJT with NPN and PNP channels, ideal for switching applications. It features 2 elements with built-in resistors, a max VCE of 50V, and hFE of 70. This surface-mount transistor has a package style of small outline and operates at a nominal fT of 150MHz.

BUILT-IN BIAS RESISTOR RATIO IS 4.7

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

70

R-PDSO-G6

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN AND PNP

AEC-Q101

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

150 MHz

BCR142B6327HTLA1 by Infineon Technologies

BCR142B6327HTLA1

Infineon Technologies

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Collector Current (IC): .1 A; No. of Elements: 1;

BUILT-IN BIAS RESISTOR RATIO IS 2.14

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

70

R-PDSO-G3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

150 MHz

BCR119SH6433XTMA1 by Infineon Technologies

BCR119SH6433XTMA1

Infineon Technologies

NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Collector Current (IC): .1 A; Maximum Collector-Emitter Voltage: 50 V;

BUILT-IN BIAS RESISTOR

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

120

R-PDSO-G6

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

YES

GULL WING

DUAL

SWITCHING

SILICON

150 MHz

PDTB143XQA,147 by Nexperia

PDTB143XQA,147

Nexperia

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Collector Current (IC): .5 A; No. of Terminals: 3;

BUILT IN BIAS RESISTANCE RATIO IS 2.13

COLLECTOR

.5 A

50 V

SINGLE WITH BUILT-IN RESISTOR

70

R-PDSO-N3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101; IEC-60134

YES

TIN

NO LEAD

DUAL

30

SWITCHING

SILICON

150 MHz

AS9013-H-HF by Comchip Technology

AS9013-H-HF

Comchip Technology

Comchip Technology's AS9013-H-HF is a NPN BJT transistor with VCEsat of 0.6V, hFE of 200, and IC of 0.5A. Ideal for small signal applications in automotive electronics due to AEC-Q101 certification and 150MHz fT. Package: PLASTIC/EPOXY, GULL WING terminals, suitable for surface mount assembly.

.5 A

25 V

SINGLE

200

R-PDSO-G3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.3 W

.3 W

AEC-Q101

YES

GULL WING

DUAL

SILICON

150 MHz

.6 V

AS9013-L-HF by Comchip Technology

AS9013-L-HF

Comchip Technology

Comchip Technology's AS9013-L-HF is a NPN BJT transistor with VCEsat of 0.6V, hFE of 120, and IC of 0.5A. Ideal for small signal applications in automotive electronics due to AEC-Q101 certification and high transition frequency of 150MHz.

.5 A

25 V

SINGLE

120

R-PDSO-G3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.3 W

.3 W

AEC-Q101

YES

GULL WING

DUAL

SILICON

150 MHz

.6 V

AS9013-J-HF by Comchip Technology

AS9013-J-HF

Comchip Technology

Comchip Technology's AS9013-J-HF is a NPN BJT with VCEsat of 0.6V, hFE of 300, and IC of 0.5A. Ideal for small signal applications in automotive electronics due to AEC-Q101 certification and 150MHz fT.

.5 A

25 V

SINGLE

300

R-PDSO-G3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.3 W

.3 W

AEC-Q101

YES

GULL WING

DUAL

SILICON

150 MHz

.6 V

FCX493QTA by Diodes Incorporated

FCX493QTA

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

10 pF

100 V

SINGLE

20

R-PSSO-F3

e3

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1 W

AEC-Q101; IATF 16949; MIL-STD-202

YES

MATTE TIN

FLAT

SINGLE

SWITCHING

SILICON

150 MHz

.6 V