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.3 W RF Small Signal Bipolar Junction Transistors (BJT) 26

RF Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Minimum Power Gain (Gp) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum VCEsat
IMX5T108 by ROHM

IMX5T108

ROHM

ROHM's IMX5T108 is a NPN BJT transistor with 2 elements, ideal for amplifier applications. It has a max power dissipation of 0.3W, fT of 1400MHz, and hFE of 27. The package is small outline with gull wing terminals, suitable for surface mount assembly at up to 260°C peak reflow temperature.

.05 A

SEPARATE, 2 ELEMENTS

27

R-PDSO-G6

e1

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.3 W

Not Qualified

Other Transistors

YES

TIN SILVER COPPER

GULL WING

DUAL

10

AMPLIFIER

SILICON

1400 MHz

BFG520,215 by NXP Semiconductors

BFG520,215

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 9000 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .07 A;

HIGH RELIABILITY

COLLECTOR

.07 A

15 V

SINGLE

60

L BAND

R-PDSO-G4

e3

1

1

4

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.3 W

.3 W

Not Qualified

CECC

Other Transistors

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

9000 MHz

BFG520/X,215 by NXP Semiconductors

BFG520/X,215

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 9000 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .07 A;

HIGH RELIABILITY

COLLECTOR

.07 A

15 V

SINGLE

60

L BAND

R-PDSO-G4

e3

1

1

4

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.3 W

.3 W

Not Qualified

CECC

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

9000 MHz

BFG67,215 by NXP Semiconductors

BFG67,215

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .05 A;

HIGH RELIABILITY

COLLECTOR

.05 A

10 V

SINGLE

60

L BAND

R-PDSO-G4

e3

1

1

4

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.3 W

.3 W

Not Qualified

CECC

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

8000 MHz

BFG67/X,215 by NXP Semiconductors

BFG67/X,215

NXP Semiconductors

NXP Semiconductors' BFG67/X,215 is a NPN RF BJT transistor with 4 terminals. It operates in L Band with fT of 8000 MHz and hFE of 60. Ideal for amplifier applications, it has a max power dissipation of 0.3 W and can handle up to 10 V collector-emitter voltage.

HIGH RELIABILITY

COLLECTOR

.05 A

10 V

SINGLE

60

L BAND

R-PDSO-G4

e3

1

1

4

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.3 W

.3 W

Not Qualified

CECC

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

AMPLIFIER

SILICON

8000 MHz

BFG93A,215 by NXP Semiconductors

BFG93A,215

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 6000 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .035 A;

LOW NOISE, HIGH RELIABILITY

COLLECTOR

.035 A

12 V

SINGLE

40

ULTRA HIGH FREQUENCY BAND

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.3 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

6000 MHz

BFQ67,215 by NXP Semiconductors

BFQ67,215

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .05 A;

LOW NOISE, HIGH RELIABILITY

.05 A

10 V

SINGLE

60

L BAND

R-PDSO-G3

e3

1

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.3 W

.3 W

Not Qualified

Other Transistors

YES

Tin (Sn)

GULL WING

DUAL

30

AMPLIFIER

SILICON

8000 MHz

BFR520,215 by NXP Semiconductors

BFR520,215

NXP Semiconductors

NXP Semiconductors' BFR520,215 is a NPN RF BJT transistor with 3 terminals. It operates in L Band with fT of 9000 MHz and hFE of 60. Ideal for amplifier applications, it has a max power dissipation of 0.3W and can handle a max collector current of 0.07A at an operating temp of 175°C.

LOW NOISE, HIGH RELIABILITY

.07 A

SINGLE

60

L BAND

R-PDSO-G3

e3

1

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.3 W

.3 W

Not Qualified

CECC

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

9000 MHz

BFR520T,115 by NXP Semiconductors

BFR520T,115

NXP Semiconductors

BFR520T,115 by NXP Semiconductors is a RF Small Signal Bipolar Junction Transistor (BJT) with NPN polarity. It is a single configuration amplifier transistor that operates in the L Band frequency range up to 9000 MHz. With a max power dissipation of 0.3 W and a max operating temperature of 150°C, it is suitable for various applications requiring high-frequency amplification.

HIGH RELIABILITY

.07 A

SINGLE

60

L BAND

R-PDSO-G3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.3 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

9000 MHz

BFR92AW,115 by NXP Semiconductors

BFR92AW,115

NXP Semiconductors

NXP Semiconductors' BFR92AW,115 is an NPN RF BJT with a max fT of 5000 MHz. It has a max power dissipation of 0.3 W and operates in the ultra-high frequency band. Ideal for amplifier applications, this transistor comes in a small outline package with gull wing terminals for surface mount assembly.

HIGH RELIABILITY

.025 A

15 V

SINGLE

40

ULTRA HIGH FREQUENCY BAND

R-PDSO-G3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.3 W

.3 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

5000 MHz

BFR93AW,115 by NXP Semiconductors

BFR93AW,115

NXP Semiconductors

NXP Semiconductors' BFR93AW,115 is a NPN RF BJT transistor with 3 terminals. It operates in the ultra-high frequency band up to 5000 MHz and has a max power dissipation of 0.3 W. Ideal for amplifier applications, it features a max collector-emitter voltage of 12V and a min DC current gain of 40 hFE.

HIGH RELIABILITY

.035 A

12 V

SINGLE

40

ULTRA HIGH FREQUENCY BAND

R-PDSO-G3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.3 W

.3 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

5000 MHz

BFS17,215 by NXP Semiconductors

BFS17,215

NXP Semiconductors

The NXP Semiconductors BFS17,215 is an NPN RF BJT transistor with a max operating temperature of 150°C. It has a transition frequency of 1600 MHz and can handle a collector-emitter voltage of 15V. This transistor is commonly used in amplifier applications due to its ultra-high frequency band capabilities.

.025 A

1.5 pF

15 V

SINGLE

25

ULTRA HIGH FREQUENCY BAND

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.3 W

.3 W

Not Qualified

CECC

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

1600 MHz

BFS17A,215 by NXP Semiconductors

BFS17A,215

NXP Semiconductors

NXP Semiconductors' BFS17A,215 is an NPN RF BJT transistor with a max fT of 2800 MHz. It has a small outline package style and can handle up to 15V collector-emitter voltage. Ideal for ultra-high frequency amplifier applications in surface mount configurations.

.025 A

15 V

SINGLE

25

ULTRA HIGH FREQUENCY BAND

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.3 W

.3 W

Not Qualified

CECC

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

2800 MHz

BFS17W,115 by NXP Semiconductors

BFS17W,115

NXP Semiconductors

NXP Semiconductors' BFS17W,115 is a NPN RF BJT transistor with 3 terminals and max. power dissipation of 0.3 W. It operates in the ultra high frequency band at 1600 MHz, making it ideal for amplifier applications. The transistor has a max. collector-emitter voltage of 15 V and can handle a max. collector current of 0.05 A.

.05 A

1.5 pF

15 V

SINGLE

25

ULTRA HIGH FREQUENCY BAND

R-PDSO-G3

e3

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.3 W

.3 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

1600 MHz

BFS520,115 by NXP Semiconductors

BFS520,115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 9000 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .07 A;

LOW NOISE, HIGH RELIABILITY

.07 A

SINGLE

60

L BAND

R-PDSO-G3

e3

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.3 W

.3 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

9000 MHz

BFT92,215 by NXP Semiconductors

BFT92,215

NXP Semiconductors

NXP Semiconductors' BFT92,215 is a PNP RF BJT with 3 terminals. It operates in the ultra-high frequency band up to 5 GHz and has a max power dissipation of 0.3W. Ideal for amplifier applications, this transistor can handle a max collector-emitter voltage of 15V at an operating temp of 150°C.

LOW NOISE

.025 A

15 V

SINGLE

20

ULTRA HIGH FREQUENCY BAND

TO-236AB

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.3 W

.3 W

Not Qualified

CECC

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

5000 MHz

BFT92W,115 by NXP Semiconductors

BFT92W,115

NXP Semiconductors

NXP Semiconductors' BFT92W,115 is a PNP RF BJT transistor with 3 terminals. It operates in L Band with fT of 4000 MHz and hFE of 20. Ideal for amplifier applications, it has a max power dissipation of 0.3 W and can handle up to 15V collector-emitter voltage.

HIGH RELIABILITY

.025 A

15 V

SINGLE

20

L BAND

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.3 W

.3 W

Not Qualified

Other Transistors

YES

Tin (Sn)

GULL WING

DUAL

30

AMPLIFIER

SILICON

4000 MHz

BFT93,215 by NXP Semiconductors

BFT93,215

NXP Semiconductors

NXP Semiconductors' BFT93,215 is a PNP RF BJT transistor with 3 terminals. It operates in the ultra-high frequency band up to 5000 MHz and has a max power dissipation of 0.3W. Ideal for amplifier applications, it features a small outline package with gull wing terminals for surface mounting.

LOW NOISE

.035 A

12 V

SINGLE

20

ULTRA HIGH FREQUENCY BAND

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.3 W

.3 W

Not Qualified

CECC

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

5000 MHz

BFT93W,115 by NXP Semiconductors

BFT93W,115

NXP Semiconductors

The NXP BFT93W,115 is a PNP RF BJT transistor with 3 terminals and a max power dissipation of 0.3 W. It operates in the L band with a transition frequency of 4000 MHz, making it ideal for amplifier applications in high-frequency circuits. The small outline package and surface-mount capability enhance its versatility in compact electronic designs.

HIGH RELIABILITY

.05 A

12 V

SINGLE

20

L BAND

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.3 W

.3 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

4000 MHz

BFR93AR,215 by NXP Semiconductors

BFR93AR,215

NXP Semiconductors

NXP Semiconductors' BFR93AR,215 is a NPN RF BJT transistor with 3 terminals. It operates in C band with fT of 6000 MHz and hFE of 40. Ideal for amplifier applications, it has a max power dissipation of 0.3W and can handle up to 12V collector-emitter voltage.

.035 A

.6 pF

12 V

SINGLE

40

C BAND

R-PDSO-G3

e3

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.3 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

AMPLIFIER

SILICON

6000 MHz

BFR92AW,135 by NXP Semiconductors

BFR92AW,135

NXP Semiconductors

NXP Semiconductors' BFR92AW,135 is an NPN RF BJT transistor with a max fT of 5000 MHz. It's ideal for ultra-high frequency band applications like amplifiers due to its small outline package and high hFE of 40. With a max power dissipation of 0.3 W and VCE of 15V, it operates at up to 150°C ambient temperature.

HIGH RELIABILITY

.025 A

15 V

SINGLE

40

ULTRA HIGH FREQUENCY BAND

R-PDSO-G3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.3 W

.3 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

5000 MHz

BFG520/XR,215 by NXP Semiconductors

BFG520/XR,215

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 9000 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .07 A;

HIGH RELIABILITY

COLLECTOR

.07 A

15 V

SINGLE

60

L BAND

R-PDSO-G4

e3

1

1

4

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.3 W

.3 W

Not Qualified

CECC

Other Transistors

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

9000 MHz

MMBTH10-4LT1 by Onsemi

MMBTH10-4LT1

Onsemi

MMBTH10-4LT1 by Onsemi is an NPN RF BJT with a max fT of 800 MHz. It has a max IC of 0.025 A and hFE of 120, suitable for UHF applications. This small outline transistor operates up to 150 °C, making it ideal for high-frequency circuits in compact designs.

.025 A

.7 pF

25 V

SINGLE

120

ULTRA HIGH FREQUENCY BAND

TO-236AB

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

NPN

.3 W

Not Qualified

Other Transistors

YES

Tin/Lead (Sn/Pb)

GULL WING

DUAL

30

SILICON

800 MHz

MMBTH24-7-F by Diodes Incorporated

MMBTH24-7-F

Diodes Incorporated

Diodes Inc. MMBTH24-7-F is a NPN BJT transistor for RF applications. Features include 400MHz fT, 40V VCEO, and 0.3W Ptot. Ideal for ultra-high frequency amplification in compact SOT package with Gull Wing terminals.

.05 A

.7 pF

40 V

SINGLE

30

ULTRA HIGH FREQUENCY BAND

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.3 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

400 MHz

BFR92A,235 by NXP Semiconductors

BFR92A,235

NXP Semiconductors

NXP Semiconductors' BFR92A,235 is an NPN RF BJT transistor with a max fT of 5000 MHz. It has a max power dissipation of 0.3W and operates up to 150°C. Ideal for amplifier applications in L Band due to its small outline package and high transition frequency.

LOW NOISE

.025 A

15 V

SINGLE

65

L BAND

TO-236AB

R-PDSO-G3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.3 W

IEC-134

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

5000 MHz

BFS17,235 by NXP Semiconductors

BFS17,235

NXP Semiconductors

The NXP Semiconductors BFS17,235 is a RF BJT transistor with NPN polarity and single configuration. It operates in the ultra high frequency band up to 1600 MHz, suitable for amplifier applications. With a max power dissipation of 0.3 W and operating temperature of 150°C, it offers reliable performance in small outline packages.

.025 A

15 V

SINGLE

20

ULTRA HIGH FREQUENCY BAND

TO-236AB

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.3 W

IEC-134

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

1600 MHz