Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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STP16N60M2
STMicroelectronics
STP16N60M2 by STMicroelectronics is a N-CHANNEL FET with 12A max drain current and 110W power dissipation. Ideal for applications requiring high power handling, such as motor control systems or power supplies due to its metal-oxide semiconductor technology and single configuration in enhancement mode.
SINGLE
12 A
METAL-OXIDE SEMICONDUCTOR
1
ENHANCEMENT MODE
150 Cel
N-CHANNEL
110 W
FET General Purpose Power
NO
STU16N60M2
STU16N60M2 by STMicroelectronics is a N-CHANNEL FET with 12A ID and 110W power dissipation. Ideal for applications requiring high drain current capability, such as power supplies or motor control systems. Operating in enhancement mode, it offers reliable performance up to 150 °C.
STL52N25M5
STL52N25M5 by STMicroelectronics is a N-CHANNEL FET with 250V DS Breakdown Voltage, 112A IDM, and 0.076 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 110W.
ULTRA LOW-ON RESISTANCE
230 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
250 V
28 A
4.2 A
.076 ohm
R-PDSO-F5
5
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
225
112 A
YES
FLAT
DUAL
SWITCHING
SILICON
STB155N3H6
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 110 W; No. of Terminals: 2; Case Connection: DRAIN;
ULTRA-LOW RESISTANCE
525 mJ
30 V
80 A
.003 ohm
TO-263AB
R-PSSO-G2
2
175 Cel
NOT SPECIFIED
320 A
FET General Purpose Powers
GULL WING
STD155N3H6
STD155N3H6 by STMicroelectronics is a N-CHANNEL FET with 30V DS Breakdown Voltage, 320A IDM, and 0.003 ohm RDS(on). Ideal for SWITCHING applications, it features a built-in DIODE and operates in ENHANCEMENT MODE. With a max power dissipation of 110W, this MOSFET is designed for high-power requirements.
TO-252
STB95N4F3
STB95N4F3 by STMicroelectronics is a N-CHANNEL FET with 80A max drain current and 110W power dissipation. Ideal for high-power applications, it operates at up to 175 °C and features surface mount configuration for easy installation.
e3
245
MATTE TIN
30
STI18N65M5
STI18N65M5 by STMicroelectronics is a N-CHANNEL FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. It features 60A IDM, 210mJ EAS, and 0.22 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max power dissipation of 110W at 150 °C.
210 mJ
650 V
15 A
.22 ohm
TO-262AA
R-PSIP-T3
3
IN-LINE
60 A
THROUGH-HOLE
STP7N80K5
STP7N80K5 by STMicroelectronics is a N-CHANNEL FET with 800V DS Breakdown Voltage, ideal for SWITCHING applications. It features 24A IDM, 88mJ EAS, and 110W Max Power Dissipation. The transistor operates in ENHANCEMENT MODE with a max temperature of 150 °C, making it suitable for high-power electronic systems.
88 mJ
800 V
6 A
1.2 ohm
TO-220AB
R-PSFM-T3
FLANGE MOUNT
24 A
Matte Tin (Sn)
STP80N70F6
STMicroelectronics' STP80N70F6 is a N-CHANNEL Power FET with 96A ID and 110W power dissipation. Ideal for high-power applications, it operates up to 175 °C. Its METAL-OXIDE SEMICONDUCTOR technology ensures efficient performance in single-channel configurations.
96 A
IRFR6215TR
International Rectifier
IRFR6215TR is a P-CHANNEL FET with 150V DS Breakdown Voltage, 44A IDM, and 0.295 ohm RDS. Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operating in ENHANCEMENT MODE, it offers high power dissipation of 110W and can withstand up to 175°C temperature.
AVALANCHE RATED
310 mJ
150 V
13 A
.295 ohm
TO-252AA
e0
240
P-CHANNEL
44 A
Not Qualified
Other Transistors
Tin/Lead (Sn/Pb)
STB155N3LH6
STB155N3LH6 by STMicroelectronics is a N-CHANNEL FET with 30V DS Breakdown Voltage, 320A IDM, and 0.004 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 110W.
.004 ohm
Matte Tin (Sn) - annealed
IRFR13N20DTRL
IRFR13N20DTRL by International Rectifier is a N-CHANNEL FET with 200V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 52A and EAS of 130mJ, operating in ENHANCEMENT MODE at up to 175°C. This PLASTIC/EPOXY transistor has a 0.235 ohm Drain-Source On Resistance and can handle up to 110W power dissipation.
130 mJ
200 V
.235 ohm
52 A
IRFR13N20DTR
IRFR13N20DTR by International Rectifier is a N-CHANNEL FET with 200V DS Breakdown Voltage, ideal for SWITCHING applications. It features 52A Max Pulsed Drain Current and 0.235 ohm Max Drain-Source On Resistance. With a package style of SMALL OUTLINE, it operates at up to 175°C and has a power dissipation of 110W.
STP150N3LLH6
STP150N3LLH6 by STMicroelectronics is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 320A IDM, 525mJ EAS, and 0.0049 ohm RDS(ON). The transistor operates in ENHANCEMENT MODE with a max power dissipation of 110W at 175 °C.
.0049 ohm
STB11NM60-1
STB11NM60-1 by STMicroelectronics is a N-channel Power FET with 600V DS breakdown voltage, 44A IDM, and 0.45 ohm RDS(on). Ideal for switching applications, it features a single configuration with built-in diode and operates in enhancement mode. The transistor has a max power dissipation of 110W and can withstand temperatures up to 150 °C.
350 mJ
600 V
11 A
.45 ohm
STB20NM50-1
STB20NM50-1 by STMicroelectronics is a N-channel FET with 500V DS breakdown voltage, 80A IDM, and 0.25 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with 110W power dissipation and 150 °C max temperature.
650 mJ
500 V
20 A
.25 ohm
TIN
STB85NF3LLT4
STB85NF3LLT4 by STMicroelectronics is a N-CHANNEL FET with 30V DS Breakdown Voltage, 85A Drain Current, and 0.0095 ohm On Resistance. Ideal for SWITCHING applications due to its 340A Pulsed Drain Current capability. Package style is SMALL OUTLINE with GULL WING terminals for surface mount assembly.
85 A
.0095 ohm
340 A
STH80N10F7-2
STH80N10F7-2 by STMicroelectronics is a N-CHANNEL FET with 100V DS Breakdown Voltage, 320A IDM, and 0.0095 ohm RDS. It's used for SWITCHING applications in ENHANCEMENT MODE at -55 to 175 °C, with 110W Pdiss and GULL WING terminals.
100 V
-55 Cel
STP80N10F7
STP80N10F7 by STMicroelectronics is a N-CHANNEL FET with 100V DS Breakdown Voltage, 80A ID, and 0.01 ohm RDS. It is used for SWITCHING applications in ENHANCEMENT MODE with 320A IDM. Operating temp range: -55 to 175 °C.
.01 ohm
STB60N55F3
STB60N55F3 from STMicroelectronics is a high-performance N-channel FET designed for efficient switching applications. It features a max drain current of 80 A, a breakdown voltage of 55 V, and operates at up to 175 °C. Ideal for power management in compact designs, it ensures reliable performance with low on-resistance.
390 mJ
55 V
.0085 ohm
STD60N55F3
STD60N55F3 by STMicroelectronics is a high-performance N-channel FET designed for efficient switching applications. It features a max drain current of 80 A, a breakdown voltage of 55 V, and operates at up to 175 °C. Ideal for power management in compact designs, it offers low on-resistance and built-in diode functionality.
260
STP60N55F3
STP60N55F3 from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 80 A, a breakdown voltage of 55 V, and operates at up to 175 °C. Ideal for high-efficiency power management in various electronic devices.
STP95N4F3
STP95N4F3 by STMicroelectronics is a N-CHANNEL FET with 40V DS Breakdown Voltage, 320A IDM, and 0.0062 ohm RDS(on). Ideal for SWITCHING applications due to its 110W Pdiss, 175°C Tmax, and EAS of 400mJ. Package style: FLANGE MOUNT with Matte Tin finish.
400 mJ
40 V
.0062 ohm
STU60N55F3
STU60N55F3 by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 80 A, a breakdown voltage of 55 V, and operates at up to 175 °C. Ideal for high-efficiency power management in various electronic devices.
TO-251
STU95N4F3
STU95N4F3 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 80 A, a breakdown voltage of 40 V, and operates at up to 175 °C. Ideal for high-power circuits, it ensures reliable performance with low on-resistance.
.065 ohm
STD100N3LF3
STD100N3LF3 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 80 A, a breakdown voltage of 30 V, and operates at up to 175 °C. Ideal for high-performance power management in compact designs.
500 mJ
.0055 ohm
STD90N4F3
STD90N4F3 by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a max drain current of 80 A, a breakdown voltage of 40 V, and operates at up to 175 °C. Ideal for high-performance power management in compact designs.
.0065 ohm
STP90N4F3
STP90N4F3 from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 80 A, a breakdown voltage of 40 V, and operates at up to 175 °C. Ideal for high-efficiency power management in various electronic devices.
STU90N4F3
STU90N4F3 from STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 80 A, a breakdown voltage of 40 V, and operates at up to 175 °C. Ideal for high-power circuits, it ensures reliable performance with low on-resistance.
STI90N4F3
STI90N4F3 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 80 A, a breakdown voltage of 40 V, and operates at up to 175 °C. Ideal for high-power circuits with low on-resistance (0.0062 Ω).
IRFZ44N,127
NXP Semiconductors
NXP Semiconductors' IRFZ44N,127 is a N-CHANNEL Power FET with 55V DS Breakdown Voltage. Ideal for SWITCHING applications, it features 160A IDM and 0.022 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max power dissipation of 110W and can handle up to 175°C temperature.
ESD PROTECTED
110 mJ
49 A
.022 ohm
160 A
SIHFR430ATR-GE3
Vishay Intertechnology
Vishay Intertechnology's SIHFR430ATR-GE3 is a N-channel FET with 500V DS breakdown voltage, ideal for switching applications. Features include 20A pulsed drain current, 130mJ avalanche energy rating, and 1.7 ohm max drain-source resistance. Its small outline package and high power dissipation make it suitable for enhancement mode operation in various electronic devices.
5 A
1.7 ohm
SIHFR430ATRL-GE3
Vishay Intertechnology's SIHFR430ATRL-GE3 is a N-channel Power FET with 500V DS breakdown voltage, ideal for switching applications. It features 20A max pulsed drain current and 1.7ohm max drain-source resistance. With a package style of small outline and operating temperature up to 150°C, it offers high performance in compact designs.
SIHFR430ATRR-GE3
SIHFR430ATRR-GE3 by Vishay Intertechnology is a N-channel power FET with a min DS breakdown voltage of 500V. It is used for switching applications and has a max pulsed drain current of 20A.
STP11NM60A
STP11NM60A from STMicroelectronics is an N-channel MOSFET ideal for switching applications. It features a 600V breakdown voltage, 11A max drain current, and 110W power dissipation. This versatile FET operates efficiently in high-temperature environments up to 150 °C.
STB9NK50ZT4
STB9NK50ZT4 by STMicroelectronics is a robust N-channel FET designed for efficient switching applications. It features a 500V breakdown voltage, 7.2A max drain current, and operates at up to 150 °C. Ideal for power management in compact electronic devices.
190 mJ
7.2 A
.85 ohm
28.8 A
STP62NS04Z
STP62NS04Z by STMicroelectronics is a N-CHANNEL FET with 33V DS Breakdown Voltage, ideal for SWITCHING applications. It features 248A IDM, 500mJ EAS, and 0.015 ohm RDS(ON). With a max power dissipation of 110W and operating temperature of 175°C, it offers reliable performance in various electronic systems.
33 V
40 A
62 A
.015 ohm
248 A
STD150N3LLH6
STD150N3LLH6 by STMicroelectronics is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 320A Max Pulsed Drain Current and 0.0045 ohm Max RDS(on), operating in ENHANCEMENT MODE. With a compact SMALL OUTLINE package and 110W Power Dissipation, it offers high performance in various power management systems.
.0045 ohm
NTD110N02R-001G
Onsemi
NTD110N02R-001G by Onsemi is a Power FET with 24V DS Breakdown Voltage, 110A IDM, and 0.0062 ohm RDS(on). Ideal for SWITCHING applications, it features an ENHANCEMENT MODE operation and 175 °C Max Temp. With a built-in diode, this N-CHANNEL transistor has a 120mJ EAS rating.
120 mJ
24 V
32 A
12.5 A
110 A
NTD110N02R-001
NTD110N02R-001 by Onsemi is a Power FET with 24V DS Breakdown Voltage, 110A IDM, and 0.0062 ohm RDS(on). Ideal for SWITCHING applications, it features an ENHANCEMENT MODE operation and 120mJ EAS rating. With a max power dissipation of 110W and operating temperature up to 175 °C, this N-CHANNEL transistor in PLASTIC/EPOXY package is suitable for high-power electronic designs.
235
TIN LEAD
STP6NK70Z
STP6NK70Z by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 700V breakdown voltage, 20A pulsed drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
200 mJ
700 V
1.8 ohm
STD100N03LT4
STD100N03LT4 by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a max drain current of 80 A, a breakdown voltage of 30 V, and operates at up to 175 °C. Ideal for high-performance power management in compact designs.
70 A
TO-251AA
STD95N04
STD95N04 by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a max drain current of 80 A, a breakdown voltage of 40 V, and operates at up to 175 °C. Ideal for high-power circuits, it ensures reliable performance with low on-resistance.
IRF5305LPBF
IRF5305LPBF is a P-CHANNEL FET with 55V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 110A IDM, 280mJ EAS, and 0.06 ohm RDS(on). Operating at up to 150°C, it has a power dissipation of 110W in an IN-LINE package style.
LOGIC LEVEL COMPATIBLE, AVALANCHE RATED, HIGH RELIABILITY
280 mJ
31 A
.06 ohm
Matte Tin (Sn) - with Nickel (Ni) barrier
STP95N04
STP95N04 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 80 A, a breakdown voltage of 40 V, and operates at up to 175 °C. Ideal for high-power circuits with low on-resistance (0.0065 Ω).
STD70NS04ZL
STD70NS04ZL by STMicroelectronics is a N-CHANNEL Power FET with 33V DS Breakdown Voltage and 280A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, 0.0125 ohm RDS(on), and operates in ENHANCEMENT MODE. This surface mount transistor has a max power dissipation of 110W and can handle up to 70A ID.
.0125 ohm
280 A
STD120N4F6
STD120N4F6 by STMicroelectronics is a N-CHANNEL Power FET with 40V DS Breakdown Voltage, 320A IDM, and 0.004 ohm RDS(on). Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE. Operating in ENHANCEMENT MODE, this transistor has a max power dissipation of 110W and can withstand temperatures up to 175°C.
394 mJ
STP120N4F6
STP120N4F6 by STMicroelectronics is a N-CHANNEL FET with 40V DS Breakdown Voltage, 320A IDM, and 0.0043 ohm RDS(on). Ideal for SWITCHING applications due to its 110W power dissipation and ENHANCEMENT MODE operation. The transistor features a SINGLE configuration with built-in diode in a PLASTIC/EPOXY package.
.0043 ohm
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