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110 W Power Field Effect Transistors (FET) 69

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
STW19NM50N by STMicroelectronics

STW19NM50N

STMicroelectronics

STW19NM50N by STMicroelectronics is a N-CHANNEL FET with 500V DS breakdown voltage, ideal for switching applications. It features 56A max pulsed drain current and 110W power dissipation. The transistor operates in enhancement mode with 0.25 ohm max on-resistance, making it suitable for high-power tasks.

208 mJ

SINGLE WITH BUILT-IN DIODE

500 V

14 A

14 A

.25 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

110 W

56 A

Not Qualified

FET General Purpose Power

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STB50N25M5 by STMicroelectronics

STB50N25M5

STMicroelectronics

STB50N25M5 from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 28 A, a breakdown voltage of 250 V, and operates at up to 150 °C. Ideal for efficient power management in compact designs.

350 mJ

SINGLE WITH BUILT-IN DIODE

250 V

28 A

28 A

.065 ohm

METAL-OXIDE SEMICONDUCTOR

TO-263AB

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

N-CHANNEL

110 W

112 A

Not Qualified

FET General Purpose Power

YES

Matte Tin (Sn) - annealed

GULL WING

SINGLE

30

SWITCHING

SILICON

STP75NS04Z by STMicroelectronics

STP75NS04Z

STMicroelectronics

STP75NS04Z by STMicroelectronics is a N-CHANNEL FET with 33V DS Breakdown Voltage, 320A IDM, and 0.011 ohm RDS(on). Ideal for SWITCHING applications due to its 110W Pdiss, 470mJ EAS rating, and ENHANCEMENT MODE operation. Package style: FLANGE MOUNT.

470 mJ

SINGLE WITH BUILT-IN DIODE

33 V

80 A

80 A

.011 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

110 W

320 A

Not Qualified

FET General Purpose Power

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STB18NM60N by STMicroelectronics

STB18NM60N

STMicroelectronics

STB18NM60N by STMicroelectronics is a powerful N-channel FET designed for efficient switching applications. It features a 600V breakdown voltage, 52A max pulsed drain current, and operates at up to 150 °C. Ideal for high-performance power management in compact designs.

350 mJ

SINGLE WITH BUILT-IN DIODE

600 V

13 A

13 A

.285 ohm

METAL-OXIDE SEMICONDUCTOR

TO-263AB

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

N-CHANNEL

110 W

52 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

STD65N55LF3 by STMicroelectronics

STD65N55LF3

STMicroelectronics

STD65N55LF3 from STMicroelectronics is a high-performance N-channel FET designed for efficient switching applications. It features a max drain current of 80 A, a breakdown voltage of 55 V, and operates at up to 175 °C. Ideal for power management in compact designs, it ensures reliable performance with low on-resistance.

LOW THRESHOLD

300 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

55 V

80 A

80 A

.012 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

110 W

320 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

STI18NM60N by STMicroelectronics

STI18NM60N

STMicroelectronics

STI18NM60N by STMicroelectronics is an N-channel MOSFET ideal for switching applications, featuring a 600V breakdown voltage and 13A max drain current. It offers a compact through-hole design with built-in diode and operates at up to 150 °C. With a power dissipation of 110W, it's perfect for high-efficiency circuits.

350 mJ

SINGLE WITH BUILT-IN DIODE

600 V

13 A

13 A

.285 ohm

METAL-OXIDE SEMICONDUCTOR

TO-262AA

R-PSIP-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

110 W

52 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STW18NM60N by STMicroelectronics

STW18NM60N

STMicroelectronics

STW18NM60N by STMicroelectronics is a N-CHANNEL FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. It features 52A IDM, 350mJ EAS, and 0.285 ohm RDS(ON). Operating in ENHANCEMENT MODE, it has a max power dissipation of 110W at 150°C.

350 mJ

SINGLE WITH BUILT-IN DIODE

600 V

13 A

13 A

.285 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

110 W

52 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STD65NF06 by STMicroelectronics

STD65NF06

STMicroelectronics

STD65NF06 by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a max drain current of 60 A, a breakdown voltage of 60 V, and operates at up to 175 °C. Ideal for power management in compact electronic devices.

390 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

60 A

60 A

.014 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

110 W

240 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

SWITCHING

SILICON

STP65NF06 by STMicroelectronics

STP65NF06

STMicroelectronics

STP65NF06 by STMicroelectronics is a N-CHANNEL FET with 60V DS Breakdown Voltage and 0.014 ohm RDS(on). It has 240A IDM, 110W Pdiss, and EAS of 390mJ. Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation and SINGLE configuration with BUILT-IN DIODE.

390 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

60 A

60 A

.014 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

110 W

240 A

Not Qualified

FET General Purpose Power

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

HUFA76429D3ST-F085 by Onsemi

HUFA76429D3ST-F085

Onsemi

HUFA76429D3ST-F085 by Onsemi is a N-CHANNEL Power FET with 60V DS Breakdown Voltage, 20A Drain Current, and 0.029 ohm On Resistance. Ideal for applications requiring high power dissipation up to 110W in small outline packages.

ULTRA-LOW RESISTANCE

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

20 A

20 A

.029 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252AA

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

110 W

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

30

SILICON

STP16N50M2 by STMicroelectronics

STP16N50M2

STMicroelectronics

STP16N50M2 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 500V breakdown voltage, 52A pulsed drain current, and operates at temperatures from -55 °C to 150 °C. Ideal for high-power circuits, it ensures reliable performance with low on-resistance.

215 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

500 V

13 A

.28 ohm

METAL-OXIDE SEMICONDUCTOR

1.35 pF

TO-220AB

R-PSFM-T3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

110 W

52 A

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

STP16N65M2 by STMicroelectronics

STP16N65M2

STMicroelectronics

STP16N65M2 from STMicroelectronics is an N-channel FET ideal for switching applications, featuring a 650V breakdown voltage and 44A max pulsed drain current. It operates in enhancement mode with a low on-resistance of 0.36Ω. This robust transistor supports high power dissipation up to 110W.

360 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

650 V

11 A

.36 ohm

METAL-OXIDE SEMICONDUCTOR

1.1 pF

TO-220AB

R-PSFM-T3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

110 W

44 A

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

STI18N65M2 by STMicroelectronics

STI18N65M2

STMicroelectronics

STI18N65M2 by STMicroelectronics is an N-channel MOSFET ideal for high-efficiency power applications. It supports a max drain current of 12 A and power dissipation up to 110 W, operating at temperatures up to 150 °C. Perfect for switching and amplification in various electronic circuits.

SINGLE

12 A

12 A

METAL-OXIDE SEMICONDUCTOR

1

150 Cel

NOT SPECIFIED

N-CHANNEL

110 W

FET General Purpose Power

NO

NOT SPECIFIED

STP13N65M2 by STMicroelectronics

STP13N65M2

STMicroelectronics

STP13N65M2 from STMicroelectronics is a powerful N-channel MOSFET ideal for high-efficiency applications. It supports a max drain current of 10 A, power dissipation up to 110 W, and operates at temperatures up to 150 °C. Perfect for power management in industrial systems.

SINGLE

10 A

10 A

METAL-OXIDE SEMICONDUCTOR

1

150 Cel

NOT SPECIFIED

N-CHANNEL

110 W

FET General Purpose Power

NO

NOT SPECIFIED

STU13N65M2 by STMicroelectronics

STU13N65M2

STMicroelectronics

STU13N65M2 from STMicroelectronics is a powerful N-channel MOSFET ideal for high-efficiency applications. It supports a max drain current of 10 A and power dissipation up to 110 W, operating at temperatures up to 150 °C. Perfect for power management in various electronic devices.

SINGLE

10 A

10 A

METAL-OXIDE SEMICONDUCTOR

1

150 Cel

NOT SPECIFIED

N-CHANNEL

110 W

FET General Purpose Power

NO

NOT SPECIFIED

STU7N105K5 by STMicroelectronics

STU7N105K5

STMicroelectronics

STU7N105K5 by STMicroelectronics is an N-channel MOSFET ideal for power management applications. It supports a max drain current of 4 A, dissipates up to 110 W, and operates at temperatures up to 150 °C. Perfect for efficient switching in various electronic devices.

SINGLE

4 A

4 A

METAL-OXIDE SEMICONDUCTOR

1

150 Cel

NOT SPECIFIED

N-CHANNEL

110 W

FET General Purpose Power

NO

NOT SPECIFIED

STW7N105K5 by STMicroelectronics

STW7N105K5

STMicroelectronics

STW7N105K5 by STMicroelectronics is a N-CHANNEL FET with 4A max drain current and 110W max power dissipation. It utilizes metal-oxide semiconductor technology, operates up to 150°C, and is commonly used in power applications requiring high efficiency and reliability.

SINGLE

4 A

4 A

METAL-OXIDE SEMICONDUCTOR

1

150 Cel

NOT SPECIFIED

N-CHANNEL

110 W

FET General Purpose Power

NO

NOT SPECIFIED

STP9N80K5 by STMicroelectronics

STP9N80K5

STMicroelectronics

STP9N80K5 from STMicroelectronics is an N-channel FET ideal for switching applications, featuring a max drain-source voltage of 800V and a pulsed drain current of 28A. It operates in enhancement mode with a power dissipation of up to 110W. This versatile transistor is suitable for high-temperature environments, ranging from -55 °C to 150 °C.

200 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

800 V

7 A

.9 ohm

METAL-OXIDE SEMICONDUCTOR

.65 pF

TO-220AB

R-PSFM-T3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

110 W

28 A

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

STW9N80K5 by STMicroelectronics

STW9N80K5

STMicroelectronics

STW9N80K5 from STMicroelectronics is an N-channel FET designed for switching applications, featuring a max drain-source voltage of 800V and a pulsed drain current of 28A. It operates in enhancement mode with a power dissipation of up to 110W. Ideal for high-voltage circuits, it ensures reliable performance in demanding environments.

200 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

800 V

7 A

.9 ohm

METAL-OXIDE SEMICONDUCTOR

.65 pF

TO-247

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

110 W

28 A

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

NTMFS5C628NT1G by Onsemi

NTMFS5C628NT1G

Onsemi

NTMFS5C628NT1G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage and 900A IDM. Ideal for power applications, it features a built-in diode, 0.003 ohm RDS(on), and 565mJ EAS rating. Operating in enhancement mode, it can handle up to 150A ID making it suitable for high-power circuits.

565 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

150 A

150 A

.003 ohm

METAL-OXIDE SEMICONDUCTOR

13 pF

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

110 W

900 A

YES

Matte Tin (Sn) - annealed

FLAT

DUAL

30

SILICON

STP20N60M2-EP by STMicroelectronics

STP20N60M2-EP

STMicroelectronics

STP20N60M2-EP by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 600V breakdown voltage, 52A max pulsed drain current, and operates from -55 °C to 150 °C. Ideal for power management in various electronic devices.

138 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

600 V

13 A

13 A

.278 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

110 W

52 A

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON