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30 MHz Power Bipolar Junction Transistors (BJT) 25

Power Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Fall Time (tf) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
MJW0281AG by Onsemi

MJW0281AG

Onsemi

The Onsemi MJW0281AG is a NPN BJT transistor with 260V VCE, 15A IC, and 30MHz fT. Ideal for amplifier applications, it has a min hFE of 75 and comes in a plastic/epoxy package with through-hole terminals.

COLLECTOR

15 A

260 V

SINGLE

75

TO-247

R-PSFM-T3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

NO

Tin (Sn)

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

30 MHz

MJW0302AG by Onsemi

MJW0302AG

Onsemi

The Onsemi MJW0302AG is a PNP BJT transistor with 260V VCE, 15A IC, and 30MHz fT. Ideal for amplifier applications, it has a hFE of 75 and comes in a plastic/epoxy package with through-hole terminals.

COLLECTOR

15 A

260 V

SINGLE

75

TO-247

R-PSFM-T3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

NO

Tin (Sn)

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

30 MHz

NJL0281DG by Onsemi

NJL0281DG

Onsemi

NJL0281DG by Onsemi is a NPN BJT with 260V VCEO, 15A IC, and 180W Ptot. Ideal for amplifier applications due to its single configuration with built-in diode. Operates at up to 150°C, featuring a transition frequency of 30MHz in a rectangular package style.

HIGH RELIABILITY

15 A

260 V

SINGLE WITH BUILT-IN DIODE

75

TO-264

R-PSFM-T5

e3

1

5

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

180 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

30 MHz

NJL0302DG by Onsemi

NJL0302DG

Onsemi

NJL0302DG by Onsemi is a PNP BJT with 180W power dissipation, 260V max collector-emitter voltage, and 30MHz transition frequency. Ideal for amplifier applications due to its single configuration with built-in diode and high collector current of 15A.

HIGH RELIABILITY

15 A

260 V

SINGLE WITH BUILT-IN DIODE

75

TO-264

R-PSFM-T5

e3

1

5

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

180 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

30 MHz

2STA1943 by STMicroelectronics

2STA1943

STMicroelectronics

2STA1943 by STMicroelectronics is a PNP power BJT designed for amplifier applications. It features a max power dissipation of 150W, operates up to 150 °C, and supports collector-emitter voltages of 230V. Its robust design ensures reliable performance in demanding environments.

15 A

230 V

SINGLE

35

TO-264AA

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

PNP

150 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

AMPLIFIER

SILICON

30 MHz

2STC5200 by STMicroelectronics

2STC5200

STMicroelectronics

2STC5200 by STMicroelectronics is a NPN BJT transistor with max. power dissipation of 150W, max. collector-emitter voltage of 230V, and max. collector current of 15A. It is used as an amplifier in applications requiring high power handling capabilities and operates at temperatures up to 150°C.

15 A

230 V

SINGLE

35

TO-264AA

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

NPN

150 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

AMPLIFIER

SILICON

30 MHz

NJW0281G by Onsemi

NJW0281G

Onsemi

NJW0281G by Onsemi is a NPN BJT with 150W power dissipation, 250V max collector-emitter voltage, and 30MHz fT. Ideal for amplifier applications due to its single configuration and high hFE of 75. The transistor's flange mount package with matte tin finish makes it suitable for through-hole mounting in various electronic devices.

15 A

250 V

SINGLE

75

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

150 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

30 MHz

2STA1962 by STMicroelectronics

2STA1962

STMicroelectronics

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 30 MHz; Maximum Power Dissipation (Abs): 130 W; Maximum Collector Current (IC): 15 A;

15 A

230 V

SINGLE

35

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

PNP

130 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

30 MHz

2STC5242 by STMicroelectronics

2STC5242

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 30 MHz; Maximum Power Dissipation (Abs): 130 W; Maximum Collector Current (IC): 15 A;

15 A

230 V

SINGLE

35

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

NPN

130 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

AMPLIFIER

SILICON

30 MHz

MJW1302A by Onsemi

MJW1302A

Onsemi

The Onsemi MJW1302A is a PNP BJT transistor with 230V VCE, 15A IC, and 200W power dissipation. Ideal for amplifier applications, it has a min hFE of 12 and operates up to 150 °C. The package style is flange mount with a rectangular shape and through-hole terminals.

COLLECTOR

15 A

230 V

SINGLE

12

TO-247AD

R-PSFM-T3

e0

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

235

PNP

200 W

Not Qualified

Other Transistors

NO

TIN LEAD

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

30 MHz

MJW3281A by Onsemi

MJW3281A

Onsemi

MJW3281A by Onsemi is a NPN BJT transistor with 230V max collector-emitter voltage, 15A max collector current, and 200W max power dissipation. Ideal for amplifier applications due to its single configuration and silicon element material. The package style is flange mount with through-hole terminals.

COLLECTOR

15 A

230 V

SINGLE

12

TO-247AD

R-PSFM-T3

e0

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

235

NPN

200 W

Not Qualified

Other Transistors

NO

TIN LEAD

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

30 MHz

MJE15034 by Onsemi

MJE15034

Onsemi

MJE15034 by Onsemi is a NPN BJT transistor with 50W power dissipation, 350V max collector-emitter voltage, and 4A max collector current. Ideal for amplifier applications due to its single configuration and 30MHz transition frequency. Package style is flange mount with through-hole terminals.

COLLECTOR

4 A

350 V

SINGLE

10

TO-220AB

R-PSFM-T3

e0

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

235

NPN

50 W

Not Qualified

Other Transistors

NO

TIN LEAD

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

30 MHz

MJE15035 by Onsemi

MJE15035

Onsemi

MJE15035 by Onsemi is a PNP BJT transistor with 50W power dissipation, 350V max. collector-emitter voltage, and 4A max. collector current. Ideal for amplifier applications, it has a min hFE of 10 and operates up to 150 °C. The package style is flange mount with through-hole terminals in a rectangular shape.

COLLECTOR

4 A

350 V

SINGLE

10

TO-220AB

R-PSFM-T3

e0

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

235

PNP

50 W

Not Qualified

Other Transistors

NO

TIN LEAD

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

30 MHz

MJL1302AG by Onsemi

MJL1302AG

Onsemi

The Onsemi MJL1302AG is a PNP power BJT with 200W max power dissipation, 260V max collector-emitter voltage, and 15A max collector current. Ideal for amplifier applications, it has a min hFE of 45 and operates up to 150°C. The transistor comes in a plastic/epoxy package with flange mount style and through-hole terminals.

ISOLATED

15 A

260 V

SINGLE

45

TO-264AA

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

200 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

30 MHz

NJL1302D by Onsemi

NJL1302D

Onsemi

NJL1302D by Onsemi is a PNP BJT with 200W power dissipation, 260V max collector-emitter voltage, and 15A max collector current. Ideal for amplifier applications due to its single configuration with built-in diode. Features include 45 min DC current gain (hFE) and 30MHz nominal transition frequency.

HIGH RELIABILITY

15 A

260 V

SINGLE WITH BUILT-IN DIODE

45

TO-264

R-PSFM-T5

e0

1

5

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

235

PNP

200 W

Not Qualified

Other Transistors

NO

TIN LEAD

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

30 MHz

NJL3281D by Onsemi

NJL3281D

Onsemi

NJL3281D by Onsemi is a NPN BJT with 260V VCEO, 15A IC, and 200W Ptot. Ideal for amplifier applications due to its single configuration with built-in diode. Package style is flange mount with through-hole terminals.

HIGH RELIABILITY

15 A

260 V

SINGLE WITH BUILT-IN DIODE

45

TO-264

R-PSFM-T5

e0

1

5

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

235

NPN

200 W

Not Qualified

Other Transistors

NO

TIN LEAD

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

30 MHz

MJL0281A by Onsemi

MJL0281A

Onsemi

The Onsemi MJL0281A is a NPN BJT transistor with max. Vce of 260V and Ic of 15A. It has hFE of 75, suitable for amplifier applications. The package style is flange mount with through-hole terminals, made of silicon material for high performance.

HIGH RELIABILITY

15 A

260 V

SINGLE

75

TO-264AA

R-PSFM-T3

e0

1

3

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

235

NPN

Not Qualified

NO

TIN LEAD

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

30 MHz

MJL0302A by Onsemi

MJL0302A

Onsemi

The Onsemi MJL0302A is a PNP Power BJT with 260V VCE, 15A IC, and 30MHz fT. Ideal for amplifier applications, it has a hFE of 75 and SILICON element. The transistor comes in a PLASTIC/EPOXY package with FLANGE MOUNT style and TIN LEAD finish.

HIGH RELIABILITY

15 A

260 V

SINGLE

75

TO-264AA

R-PSFM-T3

e0

1

3

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

235

PNP

Not Qualified

NO

TIN LEAD

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

30 MHz

MJW0281A by Onsemi

MJW0281A

Onsemi

The Onsemi MJW0281A is a NPN BJT transistor with 260V VCEO, 15A IC, and 150W Ptot. Ideal for amplifier applications due to its high hFE of 75 and low VCEsat of 1V. With a max operating temperature of 150 °C, it offers reliable performance in various environments.

COLLECTOR

15 A

400 pF

260 V

SINGLE

75

TO-247

R-PSFM-T3

e0

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

235

NPN

150 W

Not Qualified

Other Transistors

NO

TIN LEAD

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

30 MHz

1 V

MJW0302A by Onsemi

MJW0302A

Onsemi

MJW0302A by Onsemi is a PNP BJT transistor with VCEsat of 1V, hFE of 75, and IC of 15A. Ideal for amplifier applications due to its high power dissipation of 150W and max operating temperature of 150 °C. Package style is flange mount with rectangular shape and through-hole terminals.

COLLECTOR

15 A

400 pF

260 V

SINGLE

75

TO-247

R-PSFM-T3

e0

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

235

PNP

150 W

Not Qualified

Other Transistors

NO

TIN LEAD

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

30 MHz

1 V

MJL0281AG by Onsemi

MJL0281AG

Onsemi

The Onsemi MJL0281AG is a NPN BJT transistor with 260V VCE, 15A IC, and 30MHz fT. Ideal for amplifier applications, it has a min hFE of 75 and features a PLASTIC/EPOXY package with FLANGE MOUNT style.

15 A

260 V

SINGLE

75

TO-264AA

R-PSFM-T3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

Not Qualified

NO

TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

30 MHz

FZT657QTA by Diodes Incorporated

FZT657QTA

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 30 MHz; Maximum Collector Current (IC): .5 A; Additional Features: HIGH RELIABILITY;

HIGH RELIABILITY

COLLECTOR

.5 A

300 V

SINGLE

50

R-PDSO-G4

e3

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

SILICON

30 MHz

2SA1962O(Q) by Toshiba

2SA1962O(Q)

Toshiba

Toshiba's 2SA1962O(Q) is a PNP BJT transistor with max. power dissipation of 130W, max. collector-emitter voltage of 230V, and max. collector current of 15A. Ideal for amplifier applications due to its single configuration and silicon element material, it operates at up to 150°C temperature with a nominal transition frequency of 30MHz.

COLLECTOR

15 A

230 V

SINGLE

80

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

130 W

Other Transistors

NO

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

30 MHz

2SC5242O(Q) by Toshiba

2SC5242O(Q)

Toshiba

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 30 MHz; Maximum Power Dissipation (Abs): 130 W; Maximum Collector Current (IC): 15 A;

COLLECTOR

15 A

230 V

SINGLE

80

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

NPN

130 W

Other Transistors

NO

THROUGH-HOLE

SINGLE

30

AMPLIFIER

SILICON

30 MHz

2SA1943N(S1,E,S) by Toshiba

2SA1943N(S1,E,S)

Toshiba

Toshiba's 2SA1943N(S1,E,S) is a PNP BJT with max VCEsat of 3V, ideal for amplifier applications. With a max power dissipation of 150W and max collector-emitter voltage of 230V, it offers high performance in audio amplifiers. Featuring a min hFE of 35 and fT of 30MHz, this transistor ensures efficient signal processing in various electronic circuits.

COLLECTOR

15 A

360 pF

230 V

SINGLE

35

R-XSFM-T3

1

3

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

PNP

150 W

NO

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

30 MHz

3 V