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1.5 A Power Bipolar Junction Transistors (BJT) 23

Power Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Fall Time (tf) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
BD135TG by Onsemi

BD135TG

Onsemi

The Onsemi BD135TG is a NPN BJT with max power dissipation of 1.25W, hFE of 40, and IC of 1.5A. Ideal for power applications where a single configuration is needed, operating up to 150 °C.

1.5 A

SINGLE

40

e3

1

150 Cel

NPN

1.25 W

Other Transistors

NO

MATTE TIN

2SD2211T100/Q by ROHM

2SD2211T100/Q

ROHM

ROHM 2SD2211T100/Q is a NPN BJT with VCEsat of 2V, hFE of 120, and IC of 1.5A. Ideal for power applications in small outline packages due to its high transition frequency of 80MHz and low collector-base capacitance of 20pF. Suitable for surface mount designs requiring compact solutions with a max operating temperature of 150°C.

COLLECTOR

1.5 A

20 pF

160 V

SINGLE

120

R-PSSO-F3

e2

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

2 W

Not Qualified

YES

Tin/Copper (Sn/Cu)

FLAT

SINGLE

10

SILICON

80 MHz

2 V

PCP1103-TD-H by Onsemi

PCP1103-TD-H

Onsemi

PCP1103-TD-H by Onsemi is a PNP BJT transistor with 3 terminals, capable of handling up to 1.5A collector current and 30V collector-emitter voltage. With a min hFE of 200, it's ideal for switching applications at temperatures up to 150 °C. This surface-mount transistor has a small outline package style suitable for high-frequency operations up to 450MHz.

COLLECTOR

1.5 A

30 V

SINGLE

200

TO-243

R-PSSO-F3

e6

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

3.5 W

Other Transistors

YES

TIN BISMUTH

FLAT

SINGLE

30

SWITCHING

SILICON

450 MHz

DXT13003EK-13 by Diodes Incorporated

DXT13003EK-13

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 4 MHz; Maximum Collector Current (IC): 1.5 A; Package Body Material: PLASTIC/EPOXY;

COLLECTOR

1.5 A

460 V

SINGLE

5

TO-252

R-PSSO-G2

e3

1

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

YES

Matte Tin (Sn)

GULL WING

SINGLE

NOT SPECIFIED

SILICON

4 MHz

2STF2220 by STMicroelectronics

2STF2220

STMicroelectronics

2STF2220 by STMicroelectronics is a PNP BJT transistor with 1.4W power dissipation, hFE of 75, and 20V VCE. Ideal for switching applications in small outline packages, operating up to 150 °C. Suitable for surface mount designs requiring high collector current of 1.5A.

COLLECTOR

1.5 A

20 V

SINGLE

75

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

1.4 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

SINGLE

SWITCHING

SILICON

STX616 by STMicroelectronics

STX616

STMicroelectronics

STX616 from STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 2.8W, operates up to 150 °C, and supports collector-emitter voltages up to 500V. Its cylindrical package ensures efficient thermal management in various electronic circuits.

1.5 A

500 V

SINGLE

4

TO-92

O-PBCY-T3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NOT SPECIFIED

NPN

2.8 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

BOTTOM

NOT SPECIFIED

SWITCHING

SILICON

STBV32G-AP by STMicroelectronics

STBV32G-AP

STMicroelectronics

STBV32G-AP by STMicroelectronics is a single NPN BJT designed for efficient switching applications. It features a max power dissipation of 1.5 W, operates up to 150 °C, and supports collector-emitter voltages up to 400 V. Ideal for various electronic circuits requiring reliable performance.

1.5 A

400 V

SINGLE

5

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

1.5 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

STBV32G by STMicroelectronics

STBV32G

STMicroelectronics

STBV32G by STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max collector-emitter voltage of 400V, power dissipation of 1.5W, and operates up to 150 °C. Ideal for efficient circuit designs in various electronic devices.

1.5 A

400 V

SINGLE

5

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

1.5 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

STL106D by STMicroelectronics

STL106D

STMicroelectronics

STL106D by STMicroelectronics is an NPN BJT designed for switching applications. It features a max power dissipation of 1.5W, a collector-emitter voltage of 230V, and operates up to 150 °C. Its cylindrical package with through-hole terminals ensures easy integration in circuits.

1.5 A

230 V

SINGLE WITH BUILT-IN DIODE

4

TO-92

O-PBCY-T3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NOT SPECIFIED

NPN

1.5 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

BOTTOM

NOT SPECIFIED

SWITCHING

SILICON

STBV32-AP by STMicroelectronics

STBV32-AP

STMicroelectronics

STBV32-AP from STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max collector-emitter voltage of 400V, power dissipation of 1.1W, and operates up to 150 °C. Its cylindrical package and through-hole terminals ensure easy integration in various circuits.

1.5 A

400 V

SINGLE

5

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

1.1 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

STK13003 by STMicroelectronics

STK13003

STMicroelectronics

STK13003 by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 40W, operates up to 150 °C, and supports collector-emitter voltages of 400V. Ideal for efficient circuit designs in various electronic devices.

1.5 A

400 V

SINGLE

5

R-PSIP-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NPN

40 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

DXT13003DK-13 by Diodes Incorporated

DXT13003DK-13

Diodes Incorporated

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE; Surface Mount: YES; Nominal Transition Frequency (fT): 4 MHz; Maximum Collector Current (IC): 1.5 A; Package Shape: RECTANGULAR;

COLLECTOR

1.5 A

450 V

DARLINGTON WITH BUILT-IN DIODE

5

TO-252

R-PSSO-G2

e3

1

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

YES

Matte Tin (Sn)

GULL WING

SINGLE

NOT SPECIFIED

SILICON

4 MHz

STF715 by STMicroelectronics

STF715

STMicroelectronics

STF715 by STMicroelectronics is an NPN BJT designed for switching applications, featuring a max collector-emitter voltage of 80V and a power dissipation of 1.4W. It operates efficiently at up to 150 °C with a min DC current gain (hFE) of 40. This compact surface mount transistor is ideal for various electronic circuits.

1.5 A

80 V

SINGLE

40

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1.4 W

Not Qualified

Other Transistors

YES

Matte Tin (Sn)

FLAT

SINGLE

30

SWITCHING

SILICON

50 MHz

STN715 by STMicroelectronics

STN715

STMicroelectronics

STN715 by STMicroelectronics is a versatile NPN BJT designed for switching applications. It features a max power dissipation of 1.6W, operates up to 150 °C, and supports collector-emitter voltages of 80V. Ideal for compact electronic designs with its surface mount configuration.

COLLECTOR

1.5 A

80 V

SINGLE

40

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1.6 W

Not Qualified

Other Transistors

YES

Matte Tin (Sn) - annealed

GULL WING

DUAL

30

SWITCHING

SILICON

50 MHz

BD13710S by Fairchild Semiconductor

BD13710S

Fairchild Semiconductor

Fairchild Semiconductor's BD13710S is a NPN BJT transistor with 60V VCE, 1.5A IC, and 13W Ptot. Ideal for switching applications, it has a min hFE of 63 and operates up to 150°C. The package style is flange mount with matte tin finish in a rectangular shape.

1.5 A

60 V

SINGLE

63

TO-126

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

13 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

250 MHz

ST83003 by STMicroelectronics

ST83003

STMicroelectronics

ST83003 by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 40W, operates up to 150 °C, and supports collector-emitter voltages of 400V. Ideal for efficient circuit designs with through-hole mounting.

1.5 A

400 V

SINGLE

4

TO-126

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

40 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

ST93003 by STMicroelectronics

ST93003

STMicroelectronics

ST93003 by STMicroelectronics is a PNP BJT designed for switching applications. It features a max power dissipation of 40W, operates up to 150 °C, and supports collector-emitter voltages up to 400V. Ideal for efficient power management in electronic circuits.

1.5 A

400 V

SINGLE

4

TO-126

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

40 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

BD135G by Onsemi

BD135G

Onsemi

The Onsemi BD135G is a NPN BJT transistor with 45V VCE, 1.5A IC, and 12.5W Ptot. Ideal for amplifier applications, it operates b/w -55°C to 150°C. The package style is flange mount with through-hole terminals in a rectangular shape.

1.5 A

45 V

SINGLE

25

TO-225AA

R-PSFM-T3

e3

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

12.5 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

MJE13003G by Onsemi

MJE13003G

Onsemi

MJE13003G by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 400V, max. collector current of 1.5A, and min. DC current gain of 5. It is used for switching applications due to its high power dissipation capability of 40W in a flange mount package style.

1.5 A

400 V

SINGLE

5

TO-225

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

NPN

40 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

10 MHz

STD815CP40 by STMicroelectronics

STD815CP40

STMicroelectronics

STD815CP40 by STMicroelectronics is a versatile power BJT featuring NPN and PNP configurations for efficient switching applications. It supports a max collector-emitter voltage of 400V, operates up to 150 °C, and offers a min DC gain (hFE) of 4. Ideal for dual-element designs in various electronic circuits.

1.5 A

400 V

SEPARATE, 2 ELEMENTS

4

R-PDIP-T8

e3

2

8

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NPN AND PNP

Not Qualified

BIP General Purpose Small Signal

NO

MATTE TIN

THROUGH-HOLE

DUAL

SWITCHING

SILICON

STF817A by STMicroelectronics

STF817A

STMicroelectronics

STF817A by STMicroelectronics is a PNP BJT designed for switching applications, featuring a max power dissipation of 1.4W and collector current of 1.5A. It operates up to 150 °C with an 80V collector-emitter voltage. Ideal for compact electronic designs due to its small outline package.

COLLECTOR

1.5 A

80 V

SINGLE

30

R-PDSO-F4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1.4 W

Not Qualified

Other Transistors

YES

Matte Tin (Sn)

FLAT

DUAL

30

SWITCHING

SILICON

50 MHz

STN817A by STMicroelectronics

STN817A

STMicroelectronics

STN817A by STMicroelectronics is a PNP BJT designed for switching applications, featuring a max power dissipation of 1.6 W and an operating temp up to 150 °C. It supports a collector-emitter voltage of 80 V and offers a min DC gain (hFE) of 30. This compact surface mount transistor is ideal for efficient circuit designs.

COLLECTOR

1.5 A

80 V

SINGLE

30

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1.6 W

Not Qualified

Other Transistors

YES

Matte Tin (Sn) - annealed

GULL WING

DUAL

30

SWITCHING

SILICON

50 MHz

TTA004B,Q by Toshiba

TTA004B,Q

Toshiba

TTA004B,Q by Toshiba is a PNP BJT transistor with 160V VCE, 0.5V VCEsat, and 1.5A IC. Ideal for amplifier applications, it has a max power dissipation of 10W and hFE of 140. With a package style of FLANGE MOUNT and operating temp up to 150°C, it offers high performance in through-hole configuration.

1.5 A

17 pF

160 V

SINGLE

140

TO-126

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

1.5 W

10 W

NO

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

100 MHz

.5 V