Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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NGTB15N135IHRWG
Onsemi
NGTB15N135IHRWG by Onsemi is an N-CHANNEL IGBT with 357W power dissipation, 175 °C max temp, and 1350V collector-emitter voltage. Ideal for high-power applications like industrial motor drives and renewable energy systems due to its 30A collector current capability and 20V gate-emitter voltage.
30 A
1350 V
6.5 V
20 V
e3
175 Cel
N-CHANNEL
357 W
Insulated Gate BIP Transistors
NO
Matte Tin (Sn) - annealed
NGTB15N120IHLWG
NGTB15N120IHLWG by Onsemi is an N-CHANNEL IGBT with a max collector-emitter voltage of 1200V and a max gate-emitter voltage of 20V. It has a nominal turn off time of 440ns, making it suitable for power control applications requiring high voltage handling and fast switching capabilities. The transistor's package style is flange mount with through-hole terminals, ideal for applications where efficient heat dissipation is crucial.
COLLECTOR
1200 V
SINGLE WITH BUILT-IN DIODE
TO-247
R-PSFM-T3
1
3
150 Cel
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
156 W
TIN
THROUGH-HOLE
SINGLE
POWER CONTROL
SILICON
440 ns
NGTB15N60S1EG
NGTB15N60S1EG by Onsemi is an N-CHANNEL IGBT with 650V VCE, 30A IC, and 117W Ptot. Ideal for MOTOR CONTROL applications due to its built-in diode, 440ns toff, and 93ns ton. Package: PLASTIC/EPOXY, Through-Hole terminals, Flange Mount style.
650 V
TO-220AB
117 W
MATTE TIN
MOTOR CONTROL
93 ns
NGTG15N60S1EG
NGTG15N60S1EG by Onsemi is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 650V and a max collector current of 30A. It is commonly used in motor control applications due to its nominal turn on time of 93ns and max power dissipation of 117W.
NGTB15N60EG
NGTB15N60EG by Onsemi is an N-CHANNEL IGBT with 117W power dissipation, 600V collector-emitter voltage, and 30A collector current. It operates up to 150 °C and has a gate-emitter threshold voltage of 6.5V. Ideal for high-power applications in various industries like automotive and industrial equipment.
600 V
NGTB15N120FLWG
NGTB15N120FLWG by Onsemi is an N-CHANNEL IGBT with 156W power dissipation, 1200V collector-emitter voltage, and 30A collector current. Ideal for high-power applications requiring efficient switching capabilities at up to 150°C operating temperature.
FP15R12KS4CBOSA1
Infineon Technologies
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 30 A; Qualification: Not Qualified; JESD-30 Code: R-XUFM-X24;
ISOLATED
COMPLEX
R-XUFM-X24
7
24
UNSPECIFIED
NOT SPECIFIED
Not Qualified
UPPER
460 ns
110 ns
IKP15N60TXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 30 A; JESD-30 Code: R-PSFM-T3; JEDEC-95 Code: TO-220AB;
HIGH SPEED
291 ns
32 ns
SGB15N120ATMA1
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 30 A; No. of Terminals: 2; Package Shape: RECTANGULAR;
TO-263AB
R-PSSO-G2
2
SMALL OUTLINE
YES
GULL WING
683 ns
68 ns
IKW15N120T2FKSA1
IKW15N120T2FKSA1 by Infineon is an N-CHANNEL IGBT with 1200V VCE, 30A IC, and 626ns toff. Ideal for POWER CONTROL applications due to its SINGLE configuration with BUILT-IN DIODE. Package style is FLANGE MOUNT in PLASTIC/EPOXY material.
TO-247AD
626 ns
61 ns
IKW15T120FKSA1
IKW15T120FKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max voltage of 1200V and current of 30A. It has a turn-off time of 720ns and turn-on time of 85ns, making it ideal for power control applications. The transistor comes in a rectangular package with through-hole terminals and operates at temperatures up to 150°C.
TO-247AC
720 ns
85 ns
IHW15T120FKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 30 A; Nominal Turn On Time (ton): 85 ns; Moisture Sensitivity Level (MSL): NOT APPLICABLE;
NOT APPLICABLE
SKW15N120FKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 30 A; Maximum Operating Temperature: 150 Cel; Terminal Position: SINGLE;
SIGC18T60NCX1SA6
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 30 A; Package Shape: SQUARE; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
S-XUUC-N2
SQUARE
UNCASED CHIP
NO LEAD
135 ns
29 ns
IHW30N100TFKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 30 A; JESD-30 Code: R-PSFM-T3; Package Body Material: PLASTIC/EPOXY;
1000 V
702 ns
90 ns
IGW15N120H3FKSA1
IGW15N120H3FKSA1 by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 1200V and a max collector current of 30A. It has a nominal turn-off time of 370ns and a turn-on time of 49ns, making it suitable for power control applications requiring fast switching speeds. The transistor comes in a rectangular package style with through-hole terminals, ideal for flange mount installations at temperatures up to 175°C.
370 ns
49 ns
IHY15N120R3XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 30 A; Package Style (Meter): FLANGE MOUNT; Nominal Turn Off Time (toff): 460 ns;
IGW15T120FKSA1
IGW15T120FKSA1 by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 1200V and a max collector current of 30A. It has a nominal turn-off time of 720ns and nominal turn-on time of 85ns, making it ideal for power control applications. The package style is flange mount with through-hole terminals, suitable for high-power operations up to 150°C.
SGP15N120XKSA1
SGP15N120XKSA1 by Infineon is an N-CHANNEL IGBT with 1200V VCE, 30A IC, and 683ns toff. It's used for POWER CONTROL applications due to its SILICON material and SINGLE configuration in a PLASTIC/EPOXY package.
SGW15N120FKSA1
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 30 A; No. of Elements: 1; Case Connection: COLLECTOR;
IKW15N120H3FKSA1
IKW15N120H3FKSA1 by Infineon is an N-CHANNEL IGBT with 1200V VCE, 30A IC, and 370ns toff. Ideal for POWER CONTROL applications due to its SINGLE configuration with BUILT-IN DIODE. The PLASTIC/EPOXY package ensures durability in high-temp environments up to 175°C.
IKP15N65H5XKSA1
IKP15N65H5XKSA1 by Infineon is an N-CHANNEL IGBT with VCEsat of 2.1V, IC of 30A, and Pmax of 105W. Ideal for POWER CONTROL applications due to its fast turn-off time (toff) of 196ns and high operating temperature up to 175°C. Package style is FLANGE MOUNT with COLLECTOR connection.
4.8 V
-40 Cel
105 W
196 ns
24 ns
2.1 V
SIGC15T60EX1SA1
N-CHANNEL; Surface Mount: YES; Maximum Collector Current (IC): 30 A; Maximum Gate-Emitter Threshold Voltage: 6.5 V; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Gate-Emitter Voltage: 20 V;
IHW15N120R3FKSA1
IHW15N120R3FKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 1200V and a max collector current of 30A. It has a nominal turn off time of 460ns, making it ideal for power control applications requiring high voltage and current handling capabilities. The transistor's single configuration with built-in diode and through-hole terminal form provide ease of use in various power control systems.
FGH15T120SMD_F155
Fairchild Semiconductor
Fairchild Semiconductor's FGH15T120SMD_F155 is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 30A max collector current, and 333W max power dissipation. Ideal for power control applications due to its single configuration with built-in diode and fast turn-off time of 534ns.
7.5 V
25 V
TO-247AB
333 W
534 ns
74 ns
IKD15N60RAATMA1
N-Channel; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 30 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Nominal Turn Off Time (toff): 430 ns; Maximum Gate-Emitter Voltage: 20 V;
5.7 V
N-Channel
250 W
430 ns
26 ns
NGTB15N120FL2WG
NGTB15N120FL2WG by Onsemi is an N-CHANNEL IGBT with 294W power dissipation, 1200V collector-emitter voltage, and 30A collector current. Ideal for high-power applications requiring efficient switching capabilities in industrial machinery, renewable energy systems, and motor control units.
294 W
IHW15N120R2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 357 W; Maximum Collector Current (IC): 30 A; Maximum Gate-Emitter Voltage: 20 V;
6.4 V
432 ns
STGB18N40LZ-1
STMicroelectronics
STGB18N40LZ-1 from STMicroelectronics is an N-channel IGBT designed for automotive ignition applications. It features a max collector-emitter voltage of 420 V, power dissipation of 150 W, and operates at up to 175 °C. Its built-in diode enhances efficiency in demanding environments.
VOLTAGE CLAMPING
420 V
SINGLE WITH BUILT-IN DIODE AND RESISTOR
2.3 V
16 V
TO-262AA
R-PSIP-T3
IN-LINE
150 W
AUTOMOTIVE IGNITION
22200 ns
4450 ns
IKD15N60R
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 30 A; Maximum Operating Temperature: 175 Cel;
TO-252
260
STGP18N40LZ
STGP18N40LZ from STMicroelectronics is an N-channel IGBT designed for automotive ignition applications. It features a max collector-emitter voltage of 420 V, power dissipation of 150 W, and operates at up to 175 °C. Its built-in diode enhances efficiency in demanding environments.
STGP12NB60HD
STGP12NB60HD from STMicroelectronics is an N-channel IGBT ideal for motor control applications. It features a max collector-emitter voltage of 600V, a power dissipation of 100W, and fast switching times (ton: 51ns, toff: 295ns). Its robust design ensures reliable performance in demanding environments.
5 V
100 W
295 ns
51 ns
STGB12NB60KDT4
STGB12NB60KDT4 from STMicroelectronics is an N-channel IGBT ideal for motor control applications. It features a max collector-emitter voltage of 600V, power dissipation of 125W, and fast switching times (toff: 461ns, ton: 39.5ns). Its compact design ensures efficient performance in surface mount configurations.
7 V
125 W
461 ns
39.5 ns
STGP12NB60KD
STGP12NB60KD from STMicroelectronics is an N-channel IGBT ideal for motor control applications. It features a max collector-emitter voltage of 600V, power dissipation of 125W, and a turn-off time of 461ns. This robust device operates efficiently at up to 150 °C.
RGS30TSX2DGC11
ROHM
ROHM's RGS30TSX2DGC11 is an N-CHANNEL IGBT with VCEsat of 2.1V, IC of 30A, and VGE(th) of 7V. Ideal for POWER CONTROL applications due to its fast turn-off time (toff) of 189ns and turn-on time (ton) of 39ns. Operates in temperatures ranging from -40°C to 175°C.
30 V
189 ns
39 ns
AOTF15B65M2
Alpha & Omega Semiconductor
AOTF15B65M2 by Alpha & Omega Semiconductor is an N-CHANNEL IGBT with VCEsat of 2.15V, IC of 30A, and toff of 108ns. Ideal for power control applications due to its single configuration with built-in diode and max operating temperature of 150°C.
-55 Cel
36 W
108 ns
33 ns
2.15 V
STGW15M120DF3
STGW15M120DF3 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max VCEsat of 2.3V, supports up to 1200V collector-emitter voltage, and has a max power dissipation of 259W. Ideal for high-performance switching in industrial systems.
259 W
406 ns
STGWA15M120DF3
STGWA15M120DF3 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max VCEsat of 2.3V, supports up to 1200V collector-emitter voltage, and has a max power dissipation of 259W. Ideal for high-performance switching in industrial systems.
NGTB15N120IHWG
NGTB15N120IHWG by Onsemi is an N-CHANNEL IGBT with 1200V VCE, 30A IC, and 385ns toff. It is used for power control applications due to its single configuration with built-in diode. The transistor's package style is flange mount with a plastic/epoxy body material.
385 ns
STGW15S120DF3
STGW15S120DF3 IGBT from STMicroelectronics features a max VCEsat of 2.05V and supports power control applications with a collector current of up to 30A. It operates efficiently in temperatures ranging from -55 °C to 175 °C. This single-channel device is ideal for high-power switching tasks.
584 ns
31.2 ns
2.05 V
STGWA15S120DF3
STGWA15S120DF3 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control. It features a max VCEsat of 2.05V, supports up to 1200V collector-emitter voltage, and operates at temperatures from -55 °C to 175 °C. Ideal for high-performance applications, it ensures reliable operation with a built-in diode.
STGWA15H120DF2
N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 259 W; Maximum Collector Current (IC): 30 A; Maximum Collector-Emitter Voltage: 1200 V; Maximum Operating Temperature: 175 Cel;
STGWT15H60F
STGWT15H60F by STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max VCEsat of 2V, supports up to 600V collector-emitter voltage, and operates at temperatures from -55 °C to 175 °C. Ideal for high-performance switching in industrial systems.
115 W
225 ns
34 ns
2 V
SIGC15T60EX1SA4
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 30 A; No. of Terminals: 2; Terminal Position: UPPER;
R-XUUC-N2
AIHD15N60RATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 30 A; No. of Elements: 1;
AEC-Q101
IKW15N120BH6XKSA1
IKW15N120BH6XKSA1 by Infineon is an N-Channel IGBT with VCEsat of 2.3V, toff of 373ns, and Pmax of 200W. Ideal for high-power applications like motor drives due to its VCE rating of 1200V and IC of 30A. Operating temp range from -40°C to +175°C makes it suitable for various industrial uses.
6.3 V
200 W
373 ns
46 ns
RGS30TSX2HRC11
ROHM's RGS30TSX2HRC11 is an N-CHANNEL IGBT with 1200V VCEsat, 30A IC, and 267W power dissipation. Ideal for POWER CONTROL applications, it has a fast turn-off time of 189ns and operates b/w -40 to 175°C.
267 W
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