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NXP Semiconductors RF & Microwave Amplifiers 125

RF & Microwave Amplifiers
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Characteristic Impedance Construction Gain Maximum Input Power (CW) JESD-609 Code Mounting Feature No. of Functions No. of Terminals Maximum Operating Frequency Minimum Operating Frequency Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Equivalence Code Power Supplies (V) RF or Microwave Device Type Screening Level Sub-Category Maximum Supply Current Maximum Supply Voltage Technology Terminal Finish Maximum Voltage Standing Wave Ratio
CGD1040HI,112 by NXP Semiconductors

CGD1040HI,112

NXP Semiconductors

CGD1040HI,112 by NXP Semiconductors is a hybrid RF amplifier designed for high-performance applications. It operates at 24V with a max current of 460mA and withstands temperatures from -20 °C to 100 °C. Ideal for demanding RF and microwave tasks, it ensures reliability in various environments.

1

100 Cel

-20 Cel

PLASTIC/EPOXY

SOT-115J

24

RF/Microwave Amplifiers

460 mA

HYBRID

CGD1042HI,112 by NXP Semiconductors

CGD1042HI,112

NXP Semiconductors

RF/Microwave Amplifiers; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; No. of Functions: 1; Maximum Supply Current: 460 mA; Package Equivalence Code: SOT-115J;

1

PLASTIC/EPOXY

SOT-115J

24

RF/Microwave Amplifiers

460 mA

HYBRID

CGY888C,112 by NXP Semiconductors

CGY888C,112

NXP Semiconductors

RF/Microwave Amplifiers; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; No. of Functions: 1; Package Equivalence Code: SOT-115J; Power Supplies (V): 24;

1

PLASTIC/EPOXY

SOT-115J

24

RF/Microwave Amplifiers

300 mA

HYBRID

BGU7003,132 by NXP Semiconductors

BGU7003,132

NXP Semiconductors

BGU7003,132 by NXP Semiconductors is a surface-mount RF amplifier designed for robust performance. It operates b/w -40 °C and 85 °C with a supply voltage of 2.5V and max current of 15mA. Ideal for applications in wireless communication systems.

e3

SURFACE MOUNT

1

6

85 Cel

-40 Cel

PLASTIC/EPOXY

SOLCC6,.04,14

2.5

RF/Microwave Amplifiers

15 mA

Tin (Sn)

CGD1044HI,112 by NXP Semiconductors

CGD1044HI,112

NXP Semiconductors

RF/Microwave Amplifiers; Package Body Material: PLASTIC/EPOXY; Power Supplies (V): 24; Package Equivalence Code: SOT-115J; No. of Functions: 1; Maximum Supply Current: 460 mA;

1

PLASTIC/EPOXY

SOT-115J

24

RF/Microwave Amplifiers

460 mA

BGA7124,118 by NXP Semiconductors

BGA7124,118

NXP Semiconductors

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Package Equivalence Code: SOLCC8,.12,20; Maximum Supply Current: 200 mA;

SURFACE MOUNT

1

8

PLASTIC/EPOXY

SOLCC8,.12,20

3.3/5

RF/Microwave Amplifiers

200 mA

BGA7024,135 by NXP Semiconductors

BGA7024,135

NXP Semiconductors

BGA7024,135 by NXP Semiconductors is a surface-mount RF amplifier designed for efficient performance. It operates at 5V with a max supply current of 125mA and features a plastic/epoxy package. Ideal for applications in wireless communication systems.

e3

SURFACE MOUNT

1

3

PLASTIC/EPOXY

TO-243

5

RF/Microwave Amplifiers

125 mA

TIN

BGA7024,115 by NXP Semiconductors

BGA7024,115

NXP Semiconductors

BGA7024,115 by NXP Semiconductors is a surface-mount RF amplifier designed for efficient performance. It operates at 5V with a max supply current of 125mA and features a plastic/epoxy package. Ideal for applications in wireless communication systems.

e3

SURFACE MOUNT

1

3

PLASTIC/EPOXY

TO-243

5

RF/Microwave Amplifiers

125 mA

TIN

BGA2865,115 by NXP Semiconductors

BGA2865,115

NXP Semiconductors

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Package Equivalence Code: TSSOP6,.08; Power Supplies (V): 5;

SURFACE MOUNT

1

6

PLASTIC/EPOXY

TSSOP6,.08

5

RF/Microwave Amplifiers

29.7 mA

BGU7032,115 by NXP Semiconductors

BGU7032,115

NXP Semiconductors

BGU7032,115 by NXP Semiconductors is a wideband low-power RF amplifier designed for surface mount applications. It operates at a max frequency of 1000 MHz and supports power supplies of 5V, with an operating temp range from -10 °C to 70 °C. Ideal for enhancing signal quality in communication systems.

COMPONENT

e3

SURFACE MOUNT

1

6

1000 MHz

70 Cel

-10 Cel

PLASTIC/EPOXY

TSSOP6,.08

5

WIDE BAND LOW POWER

RF/Microwave Amplifiers

TIN

BGA2850,115 by NXP Semiconductors

BGA2850,115

NXP Semiconductors

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Package Equivalence Code: TSSOP6,.08; Power Supplies (V): 5;

SURFACE MOUNT

1

6

PLASTIC/EPOXY

TSSOP6,.08

5

RF/Microwave Amplifiers

10.8 mA

CGD1046HI,112 by NXP Semiconductors

CGD1046HI,112

NXP Semiconductors

CGD1046HI,112 by NXP Semiconductors is a hybrid RF amplifier designed for high-performance applications. It operates with a supply voltage of 24V and supports temperatures from -20 °C to 100 °C, drawing up to 465mA. Ideal for demanding RF systems, it ensures reliability in various environments.

1

100 Cel

-20 Cel

PLASTIC/EPOXY

SOT-115J

24

RF/Microwave Amplifiers

465 mA

HYBRID

BGA7027,115 by NXP Semiconductors

BGA7027,115

NXP Semiconductors

BGA7027,115 by NXP Semiconductors is a surface-mount RF amplifier with a 5V power supply and a max current of 195 mA. It features a plastic/epoxy package and has 3 terminals with tin finish. Ideal for enhancing signal strength in communication systems.

e3

SURFACE MOUNT

1

3

PLASTIC/EPOXY

TO-243

5

RF/Microwave Amplifiers

195 mA

TIN

BGA2816,115 by NXP Semiconductors

BGA2816,115

NXP Semiconductors

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Package Equivalence Code: TSSOP6,.08; Maximum Supply Current: 25.5 mA;

SURFACE MOUNT

1

6

PLASTIC/EPOXY

TSSOP6,.08

3.3

RF/Microwave Amplifiers

25.5 mA

BGA2002,115 by NXP Semiconductors

BGA2002,115

NXP Semiconductors

RF/Microwave Amplifiers; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Screening Level: AEC-Q100; JESD-609 Code: e3; No. of Functions: 1;

e3

1

PLASTIC/EPOXY

SOT-343R

2.5

AEC-Q100

RF/Microwave Amplifiers

BIPOLAR

Tin (Sn)

CGY1043,112 by NXP Semiconductors

CGY1043,112

NXP Semiconductors

RF/Microwave Amplifiers; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; No. of Functions: 1; Maximum Supply Current: 280 mA; Package Equivalence Code: SOT-115J;

1

PLASTIC/EPOXY

SOT-115J

24

RF/Microwave Amplifiers

280 mA

HYBRID

CGY1041,112 by NXP Semiconductors

CGY1041,112

NXP Semiconductors

RF/Microwave Amplifiers; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Package Equivalence Code: SOT-115J; Power Supplies (V): 24; Maximum Supply Current: 280 mA;

1

PLASTIC/EPOXY

SOT-115J

24

RF/Microwave Amplifiers

280 mA

HYBRID

CGY1032,112 by NXP Semiconductors

CGY1032,112

NXP Semiconductors

RF/Microwave Amplifiers; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Power Supplies (V): 24; Maximum Supply Current: 280 mA; Package Equivalence Code: SOT-115J;

1

PLASTIC/EPOXY

SOT-115J

24

RF/Microwave Amplifiers

280 mA

HYBRID

BGU7041,115 by NXP Semiconductors

BGU7041,115

NXP Semiconductors

NXP Semiconductors' BGU7041,115 is a RF & Microwave Amplifier with 6 terminals and operates at temperatures from -10°C to 70°C. It has a power supply of 3.3V and uses surface mount technology. Ideal for applications requiring high-frequency signal amplification in various electronic devices.

e3

SURFACE MOUNT

1

6

70 Cel

-10 Cel

PLASTIC/EPOXY

TSSOP6,.08

3.3

RF/Microwave Amplifiers

Tin (Sn)

CGD987HCI,112 by NXP Semiconductors

CGD987HCI,112

NXP Semiconductors

RF/Microwave Amplifiers; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Package Equivalence Code: SOT-115J; Power Supplies (V): 24; No. of Functions: 1;

1

PLASTIC/EPOXY

SOT-115J

24

RF/Microwave Amplifiers

460 mA

GAAS

BGU7042,115 by NXP Semiconductors

BGU7042,115

NXP Semiconductors

BGU7042,115 by NXP Semiconductors is a surface-mount RF amplifier designed for efficient performance. It operates at 3.3V with a max supply current of 60mA and functions effectively in temperatures ranging from -10 °C to 70 °C. Ideal for wireless communication applications, it ensures reliable signal amplification.

e3

SURFACE MOUNT

1

6

70 Cel

-10 Cel

PLASTIC/EPOXY

TSSOP6,.08

3.3

RF/Microwave Amplifiers

60 mA

Tin (Sn)

BGU6104,147 by NXP Semiconductors

BGU6104,147

NXP Semiconductors

BGU6104,147 by NXP Semiconductors is a wideband low-power RF amplifier with a gain of 5 dB and operates b/w 40 MHz and 4000 MHz. It features a compact surface mount design with a max supply current of 40 mA. Ideal for applications in communication systems, it withstands temperatures from -40 °C to 85 °C.

COMPONENT

5 dB

e3

SURFACE MOUNT

1

6

4000 MHz

40 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

SOLCC6,.08,20

3

WIDE BAND LOW POWER

RF/Microwave Amplifiers

40 mA

TIN

BGU7003W,115 by NXP Semiconductors

BGU7003W,115

NXP Semiconductors

BGU7003W,115 by NXP Semiconductors is a surface-mount RF amplifier designed for efficient performance. It operates b/w -40 °C to 85 °C with a supply voltage of 2.5V and a max current of 15mA. Ideal for applications in wireless communication systems.

e3

SURFACE MOUNT

1

6

85 Cel

-40 Cel

PLASTIC/EPOXY

SOLCC6,.04,20

2.5

RF/Microwave Amplifiers

15 mA

TIN

BGY588C,112 by NXP Semiconductors

BGY588C,112

NXP Semiconductors

BGY588C,112 by NXP Semiconductors is a hybrid RF amplifier designed for high-performance applications. It operates at 24V with a max current of 345mA and withstands temperatures from -20 °C to 100 °C. Ideal for telecom and broadcasting systems, it ensures reliable signal amplification.

1

100 Cel

-20 Cel

PLASTIC/EPOXY

SOT-115J

24

RF/Microwave Amplifiers

345 mA

HYBRID

BGE788C,112 by NXP Semiconductors

BGE788C,112

NXP Semiconductors

BGE788C,112 by NXP Semiconductors is a hybrid RF amplifier designed for high-performance applications. It operates at 24V with a max current of 325mA and withstands temperatures from -20 °C to 100 °C. Ideal for telecommunications and broadcasting systems.

1

100 Cel

-20 Cel

PLASTIC/EPOXY

SOT-115J

24

RF/Microwave Amplifiers

325 mA

HYBRID

BGU7052,118 by NXP Semiconductors

BGU7052,118

NXP Semiconductors

BGU7052,118 by NXP Semiconductors is a surface mount RF amplifier designed for robust performance in various applications. It operates b/w -40 °C and 85 °C with a supply voltage of 3.3V and a max current of 95mA. Ideal for enhancing signal strength in communication systems.

SURFACE MOUNT

1

10

85 Cel

-40 Cel

PLASTIC/EPOXY

SOLCC10,.12,20

3.3

RF/Microwave Amplifiers

95 mA

BGA2874,115 by NXP Semiconductors

BGA2874,115

NXP Semiconductors

BGA2874,115 by NXP Semiconductors is a surface-mount RF amplifier designed for efficient signal amplification. It operates at 2.5V with a max supply current of 19mA and features a 6-terminal plastic/epoxy package. Ideal for various RF applications, it ensures reliable performance in compact designs.

e3

SURFACE MOUNT

1

6

PLASTIC/EPOXY

TSSOP6,.08

2.5

RF/Microwave Amplifiers

19 mA

TIN

BGU7053,118 by NXP Semiconductors

BGU7053,118

NXP Semiconductors

BGU7053,118 by NXP Semiconductors is an RF amplifier designed for surface mount applications. It operates b/w -40 °C to 85 °C with a supply voltage of 3.3V and a max current of 110mA. Ideal for enhancing signal strength in communication devices.

SURFACE MOUNT

1

10

85 Cel

-40 Cel

PLASTIC/EPOXY

SOLCC10,.12,20

3.3

RF/Microwave Amplifiers

110 mA

BGU8007,115 by NXP Semiconductors

BGU8007,115

NXP Semiconductors

NXP Semiconductors' BGU8007,115 is a RF & Microwave Amplifier with 6 terminals and Tin finish. It operates b/w -40 to 85°C, powered by 1.8V supply at max current of 14.7mA. Ideal for surface mount applications in various electronic devices.

e3

SURFACE MOUNT

1

6

85 Cel

-40 Cel

PLASTIC/EPOXY

SOLCC6,.04,20

1.8

RF/Microwave Amplifiers

14.7 mA

Tin (Sn)

BGA7130,118 by NXP Semiconductors

BGA7130,118

NXP Semiconductors

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Power Supplies (V): 5; No. of Functions: 1;

SURFACE MOUNT

1

8

PLASTIC/EPOXY

SOLCC8,.12,20

5

RF/Microwave Amplifiers

550 mA

BLM7G22S-60PB,118 by NXP Semiconductors

BLM7G22S-60PB,118

NXP Semiconductors

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Package Equivalence Code: FL16(UNSPEC); Power Supplies (V): 28;

SURFACE MOUNT

2

16

PLASTIC/EPOXY

FL16(UNSPEC)

28

RF/Microwave Amplifiers

BLM7G22S-60PBG,118 by NXP Semiconductors

BLM7G22S-60PBG,118

NXP Semiconductors

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; No. of Functions: 2; Package Equivalence Code: SOP16(UNSPEC);

SURFACE MOUNT

2

16

PLASTIC/EPOXY

SOP16(UNSPEC)

28

RF/Microwave Amplifiers

BGA3012,115 by NXP Semiconductors

BGA3012,115

NXP Semiconductors

NXP Semiconductors' BGA3012,115 is a RF & Microwave Amplifier with 8V power supply, 3 terminals, and max operating temp of 85°C. It features TIN terminal finish, 125mA max supply current, and surface mounting. Ideal for applications requiring high-frequency signal amplification in various electronic devices.

e3

SURFACE MOUNT

1

3

85 Cel

-40 Cel

PLASTIC/EPOXY

TO-243

8

RF/Microwave Amplifiers

125 mA

TIN

BGA3018,115 by NXP Semiconductors

BGA3018,115

NXP Semiconductors

NXP Semiconductors' BGA3018,115 is a RF & Microwave Amplifier with 8V power supply, 3 terminals, and max operating temp of 85°C. It features surface mounting and TIN terminal finish. Ideal for applications requiring high-frequency signal amplification in various electronic devices.

e3

SURFACE MOUNT

1

3

85 Cel

-40 Cel

PLASTIC/EPOXY

TO-243

8

RF/Microwave Amplifiers

135 mA

TIN

BGU8011X,115 by NXP Semiconductors

BGU8011X,115

NXP Semiconductors

BGU8011X,115 from NXP Semiconductors is a surface-mount RF amplifier designed for robust performance. It operates b/w -40 °C and 85 °C with power supplies of 1.8V/2.85V and features a compact 6-terminal design. Ideal for wireless applications, it utilizes advanced BiCMOS technology for enhanced efficiency.

SURFACE MOUNT

1

6

85 Cel

-40 Cel

PLASTIC/EPOXY

SOLCC6,.04,16

1.8/2.85

RF/Microwave Amplifiers

BICMOS

BGX885N,112 by NXP Semiconductors

BGX885N,112

NXP Semiconductors

BGX885N,112 by NXP Semiconductors is a hybrid RF amplifier designed for robust performance. It operates b/w -20 °C and 100 °C with a max supply current of 240 mA and requires a 24V power supply. Ideal for demanding microwave applications, it ensures reliability in various environments.

100 Cel

-20 Cel

PLASTIC/EPOXY

SOT-115J

24

RF/Microwave Amplifiers

240 mA

HYBRID

CGD942C,112 by NXP Semiconductors

CGD942C,112

NXP Semiconductors

RF/Microwave Amplifiers; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Package Equivalence Code: SOT-115J; No. of Functions: 1; Power Supplies (V): 24;

1

PLASTIC/EPOXY

SOT-115J

24

RF/Microwave Amplifiers

HYBRID

CGD944C,112 by NXP Semiconductors

CGD944C,112

NXP Semiconductors

RF/Microwave Amplifiers; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Power Supplies (V): 24; No. of Functions: 1; Package Equivalence Code: SOT-115J;

1

PLASTIC/EPOXY

SOT-115J

24

RF/Microwave Amplifiers

HYBRID

BGA2001,115 by NXP Semiconductors

BGA2001,115

NXP Semiconductors

NARROW BAND LOW POWER; Gain: 19.5 dB; JESD-609 Code: e3; Terminal Finish: Tin (Sn); Maximum Operating Frequency: 1800 MHz; Construction: COMPONENT;

LOW NOISE

50 ohm

COMPONENT

19.5 dB

e3

1800 MHz

900 MHz

NARROW BAND LOW POWER

Tin (Sn)

BGA2003,115 by NXP Semiconductors

BGA2003,115

NXP Semiconductors

The NXP Semiconductors BGA2003,115 is a RF & Microwave Amplifier with 16 dB gain and operates b/w 900-1800 MHz. It has a wide band low power technology, 50 ohm impedance, and requires a 2.5V power supply at max 15 mA current. Ideal for applications requiring high frequency amplification in components like plastic/epoxy packages.

LOW NOISE

50 ohm

COMPONENT

16 dB

e3

1

1800 MHz

900 MHz

PLASTIC/EPOXY

SOT-343R

2.5

WIDE BAND LOW POWER

RF/Microwave Amplifiers

15 mA

BIPOLAR

Tin (Sn)

BGA2011,115 by NXP Semiconductors

BGA2011,115

NXP Semiconductors

NARROW BAND LOW POWER; Terminal Finish: Tin (Sn); Construction: COMPONENT; Characteristic Impedance: 50 ohm; Gain: 15 dB; JESD-609 Code: e3;

50 ohm

COMPONENT

15 dB

e3

NARROW BAND LOW POWER

Tin (Sn)

BGA2012,115 by NXP Semiconductors

BGA2012,115

NXP Semiconductors

NARROW BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Maximum Supply Current: 10 mA;

50 ohm

COMPONENT

14 dB

e3

SURFACE MOUNT

1

6

150 Cel

PLASTIC/EPOXY

TSSOP6,.08

3

NARROW BAND LOW POWER

RF/Microwave Amplifiers

10 mA

BIPOLAR

Tin (Sn)

BGA2031/1,115 by NXP Semiconductors

BGA2031/1,115

NXP Semiconductors

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Maximum Voltage Standing Wave Ratio: 1.4;

50 ohm

COMPONENT

23 dB

10 dBm

e3

SURFACE MOUNT

6

2500 MHz

800 MHz

PLASTIC/EPOXY

TSSOP6,.08

3

WIDE BAND LOW POWER

RF/Microwave Amplifiers

BIPOLAR

Tin (Sn)

1.4

BGA2748,115 by NXP Semiconductors

BGA2748,115

NXP Semiconductors

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Terminal Finish: Tin (Sn); Power Supplies (V): 3;

LOW NOISE

50 ohm

COMPONENT

18.5 dB

10 dBm

e3

SURFACE MOUNT

1

6

2000 MHz

1000 MHz

PLASTIC/EPOXY

TSOP6,.08

3

WIDE BAND LOW POWER

RF/Microwave Amplifiers

8 mA

Tin (Sn)

BGA2771,115 by NXP Semiconductors

BGA2771,115

NXP Semiconductors

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Maximum Input Power (CW): 10 dBm;

50 ohm

COMPONENT

20.8 dB

10 dBm

e3

SURFACE MOUNT

1

6

2000 MHz

1000 MHz

PLASTIC/EPOXY

TSSOP6,.08

3

WIDE BAND LOW POWER

RF/Microwave Amplifiers

45 mA

BIPOLAR

Tin (Sn)

BGA2776,115 by NXP Semiconductors

BGA2776,115

NXP Semiconductors

WIDE BAND LOW POWER; JESD-609 Code: e3; Gain: 23.2 dB; Construction: COMPONENT; Maximum Operating Frequency: 2000 MHz; Characteristic Impedance: 50 ohm;

50 ohm

COMPONENT

23.2 dB

10 dBm

e3

2000 MHz

1000 MHz

WIDE BAND LOW POWER

Tin (Sn)

BGA6289,135 by NXP Semiconductors

BGA6289,135

NXP Semiconductors

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Power Supplies (V): 8; Maximum Input Power (CW): 15 dBm;

50 ohm

COMPONENT

12 dB

15 dBm

e3

SURFACE MOUNT

1

3

2500 MHz

850 MHz

PLASTIC/EPOXY

TO-243

8

WIDE BAND LOW POWER

RF/Microwave Amplifiers

96 mA

Tin (Sn)

BGA6489,135 by NXP Semiconductors

BGA6489,135

NXP Semiconductors

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Terminal Finish: Tin (Sn); Maximum Operating Frequency: 2500 MHz;

50 ohm

COMPONENT

15 dB

15 dBm

e3

SURFACE MOUNT

1

3

2500 MHz

850 MHz

PLASTIC/EPOXY

TO-243

8

WIDE BAND LOW POWER

RF/Microwave Amplifiers

86 mA

Tin (Sn)