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NXP Semiconductors RF & Microwave Amplifiers 125

RF & Microwave Amplifiers
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Characteristic Impedance Construction Gain Maximum Input Power (CW) JESD-609 Code Mounting Feature No. of Functions No. of Terminals Maximum Operating Frequency Minimum Operating Frequency Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Equivalence Code Power Supplies (V) RF or Microwave Device Type Screening Level Sub-Category Maximum Supply Current Maximum Supply Voltage Technology Terminal Finish Total Dose (V) Maximum Voltage Standing Wave Ratio
BGA2712,115 by NXP Semiconductors

BGA2712,115

NXP Semiconductors

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Minimum Operating Frequency: 100 MHz;

50 ohm

COMPONENT

16 dB

e3

SURFACE MOUNT

1

6

3000 MHz

100 MHz

PLASTIC/EPOXY

TSSOP6,.08

5

WIDE BAND LOW POWER

RF/Microwave Amplifiers

15 mA

BIPOLAR

Tin (Sn)

BGA2709,115 by NXP Semiconductors

BGA2709,115

NXP Semiconductors

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Maximum Supply Current: 32 mA;

50 ohm

COMPONENT

18 dB

10 dBm

e3

SURFACE MOUNT

1

6

3000 MHz

100 MHz

PLASTIC/EPOXY

TSSOP6,.08

5

WIDE BAND LOW POWER

RF/Microwave Amplifiers

32 mA

BIPOLAR

Tin (Sn)

AFIC31025GNR1 by NXP Semiconductors

AFIC31025GNR1

NXP Semiconductors

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 17; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; Characteristic Impedance: 50 ohm;

50 ohm

COMPONENT

30.5 dB

20 dBm

e3

SURFACE MOUNT

2

17

3100 MHz

2400 MHz

150 Cel

-40 Cel

PLASTIC/EPOXY

28

NARROW BAND HIGH POWER

LDMOS

TIN

10

A3I35D012WGNR1 by NXP Semiconductors

A3I35D012WGNR1

NXP Semiconductors

NARROW BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 17; Package Body Material: PLASTIC/EPOXY; Maximum Operating Temperature: 150 Cel; Maximum Operating Frequency: 4000 MHz;

50 ohm

COMPONENT

26.5 dB

26 dBm

SURFACE MOUNT

2

17

4000 MHz

3200 MHz

150 Cel

-40 Cel

PLASTIC/EPOXY

FLNG,.72"H.SPACE

28

NARROW BAND MEDIUM POWER

A3I20X050GNR1 by NXP Semiconductors

A3I20X050GNR1

NXP Semiconductors

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 7; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; Power Supplies (V): 2.15/28;

50 ohm

COMPONENT

28 dB

20 dBm

e3

SURFACE MOUNT

1

7

2200 MHz

1800 MHz

150 Cel

-40 Cel

PLASTIC/EPOXY

2.15/28

NARROW BAND HIGH POWER

LDMOS

TIN

MML25231HT1 by NXP Semiconductors

MML25231HT1

NXP Semiconductors

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Technology: E-PHEMT; Construction: COMPONENT;

50 ohm

COMPONENT

14.2 dB

20 dBm

e3

SURFACE MOUNT

1

8

4000 MHz

1000 MHz

PLASTIC/EPOXY

SOLCC8,.08,20

5

WIDE BAND MEDIUM POWER

65 mA

E-PHEMT

TIN

A2I20D040GNR1 by NXP Semiconductors

A2I20D040GNR1

NXP Semiconductors

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 17; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; Construction: COMPONENT;

50 ohm

COMPONENT

31.5 dB

18 dBm

e3

SURFACE MOUNT

1

17

2200 MHz

1400 MHz

150 Cel

-40 Cel

PLASTIC/EPOXY

28

NARROW BAND HIGH POWER

LDMOS

TIN

10

A2I20D040NR1 by NXP Semiconductors

A2I20D040NR1

NXP Semiconductors

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 17; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; Maximum Operating Temperature: 150 Cel;

50 ohm

COMPONENT

31.5 dB

18 dBm

e3

SURFACE MOUNT

1

17

2200 MHz

1400 MHz

150 Cel

-40 Cel

PLASTIC/EPOXY

28

NARROW BAND HIGH POWER

LDMOS

TIN

10

MMRF2010GNR1 by NXP Semiconductors

MMRF2010GNR1

NXP Semiconductors

MMRF2010GNR1 by NXP Semiconductors is a RF amplifier with 30.5 dB gain, operating frequency range of 1030-1090 MHz, and max input power of 25 dBm. It is designed for narrow band high power applications in RF & microwave systems requiring a characteristic impedance of 50 ohms. The component features LDMOS technology, surface mounting, and can operate b/w -55 to 150 °C temperature range.

50 ohm

COMPONENT

30.5 dB

25 dBm

e3

SURFACE MOUNT

1

14

1090 MHz

1030 MHz

150 Cel

-55 Cel

PLASTIC/EPOXY

50

NARROW BAND HIGH POWER

LDMOS

TIN

10

MMRF2010NR1 by NXP Semiconductors

MMRF2010NR1

NXP Semiconductors

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 14; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; Construction: COMPONENT;

50 ohm

COMPONENT

30.5 dB

25 dBm

e3

SURFACE MOUNT

1

14

1090 MHz

1030 MHz

150 Cel

-55 Cel

PLASTIC/EPOXY

50

NARROW BAND HIGH POWER

LDMOS

TIN

10

A2I35H060GNR1 by NXP Semiconductors

A2I35H060GNR1

NXP Semiconductors

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 17; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; Maximum Operating Frequency: 3800 MHz;

50 ohm

COMPONENT

23 dB

26 dBm

e3

SURFACE MOUNT

1

17

3800 MHz

3400 MHz

150 Cel

-40 Cel

PLASTIC/EPOXY

28

NARROW BAND HIGH POWER

LDMOS

TIN

10

A2I35H060NR1 by NXP Semiconductors

A2I35H060NR1

NXP Semiconductors

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 17; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; Characteristic Impedance: 50 ohm;

50 ohm

COMPONENT

23 dB

26 dBm

e3

SURFACE MOUNT

1

17

3800 MHz

3400 MHz

150 Cel

-40 Cel

PLASTIC/EPOXY

28

NARROW BAND HIGH POWER

LDMOS

TIN

10

MMZ25332B4T1 by NXP Semiconductors

MMZ25332B4T1

NXP Semiconductors

NXP Semiconductors' MMZ25332B4T1 is a wide band medium power RF amplifier with 23.5 dB gain, operating from 1500 MHz to 2700 MHz. It has a max input power of 30 dBm and requires a 5V power supply, making it suitable for various RF and microwave applications. The component features a hybrid technology construction in a surface mount package with 24 terminals.

50 ohm

COMPONENT

23.5 dB

30 dBm

e3

SURFACE MOUNT

1

24

2700 MHz

1500 MHz

PLASTIC/EPOXY

LCC24,.16SQ,20

5

WIDE BAND MEDIUM POWER

415 mA

HYBRID

TIN

AFIC31025NR1 by NXP Semiconductors

AFIC31025NR1

NXP Semiconductors

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 17; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; No. of Functions: 2;

50 ohm

COMPONENT

30.5 dB

20 dBm

e3

SURFACE MOUNT

2

17

3100 MHz

2400 MHz

150 Cel

-40 Cel

PLASTIC/EPOXY

28

NARROW BAND HIGH POWER

LDMOS

TIN

10

MMZ38333BT1 by NXP Semiconductors

MMZ38333BT1

NXP Semiconductors

NARROW BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Power Supplies (V): 5;

50 ohm

COMPONENT

36.3 dB

30 dBm

e3

SURFACE MOUNT

1

24

3800 MHz

3400 MHz

PLASTIC/EPOXY

LCC24,.16SQ,20

5

NARROW BAND LOW POWER

1200 mA

HYBRID

TIN

1.58

A3I35D025WGNR1 by NXP Semiconductors

A3I35D025WGNR1

NXP Semiconductors

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 17; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; Maximum Operating Temperature: 150 Cel;

50 ohm

COMPONENT

26.5 dB

28 dBm

SURFACE MOUNT

1

17

4000 MHz

3200 MHz

150 Cel

-40 Cel

PLASTIC/EPOXY

28

NARROW BAND HIGH POWER

LDMOS

10

A3I35D025WNR1 by NXP Semiconductors

A3I35D025WNR1

NXP Semiconductors

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 17; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; Minimum Operating Frequency: 3200 MHz;

50 ohm

COMPONENT

26.5 dB

28 dBm

e3

SURFACE MOUNT

1

17

4000 MHz

3200 MHz

150 Cel

-40 Cel

PLASTIC/EPOXY

28

NARROW BAND HIGH POWER

LDMOS

TIN

10

BGU8062J by NXP Semiconductors

BGU8062J

NXP Semiconductors

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 10; Package Body Material: PLASTIC/EPOXY; Screening Level: IEC-60134; Characteristic Impedance: 50 ohm;

50 ohm

COMPONENT

20 dBm

e4

SURFACE MOUNT

1

10

2700 MHz

1500 MHz

PLASTIC/EPOXY

SOLCC10,.12SQ,20

5

WIDE BAND LOW POWER

IEC-60134

85 mA

NICKEL PALLADIUM GOLD

1.43

BGU8051,118 by NXP Semiconductors

BGU8051,118

NXP Semiconductors

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Characteristic Impedance: 50 ohm; Maximum Input Power (CW): 20 dBm;

50 ohm

COMPONENT

17 dB

20 dBm

SURFACE MOUNT

1

8

1500 MHz

300 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

SOLCC8,.08,20

5

WIDE BAND LOW POWER

60 mA

1.07

A2I09VD050GNR1 by NXP Semiconductors

A2I09VD050GNR1

NXP Semiconductors

WIDE BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 12; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; Minimum Operating Temperature: -40 Cel;

50 ohm

COMPONENT

35 dB

20 dBm

e3

SURFACE MOUNT

1

12

960 MHz

575 MHz

150 Cel

-40 Cel

PLASTIC/EPOXY

48

WIDE BAND HIGH POWER

LDMOS

TIN

10

A3I20X050NR1 by NXP Semiconductors

A3I20X050NR1

NXP Semiconductors

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 7; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; Characteristic Impedance: 50 ohm;

50 ohm

COMPONENT

28 dB

20 dBm

e3

SURFACE MOUNT

1

7

2200 MHz

1800 MHz

150 Cel

-40 Cel

PLASTIC/EPOXY

2.15/28

NARROW BAND HIGH POWER

LDMOS

TIN

AFSC5G40E38T2 by NXP Semiconductors

AFSC5G40E38T2

NXP Semiconductors

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 26; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; Power Supplies (V): 28;

50 ohm

COMPONENT

27.1 dB

SURFACE MOUNT

1

26

4000 MHz

3700 MHz

125 Cel

PLASTIC/EPOXY

LCC26,.24X.4,40

28

NARROW BAND HIGH POWER

LDMOS

AFSC5G35E38T2 by NXP Semiconductors

AFSC5G35E38T2

NXP Semiconductors

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 26; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; Package Equivalence Code: LCC26,.24X.4,40;

50 ohm

COMPONENT

29.3 dB

e4

SURFACE MOUNT

1

26

3700 MHz

3400 MHz

125 Cel

PLASTIC/EPOXY

LCC26,.24X.4,40

30

NARROW BAND HIGH POWER

LDMOS

NICKEL PALLADIUM GOLD

A3M35TL039T2 by NXP Semiconductors

A3M35TL039T2

NXP Semiconductors

NXP Semiconductors A3M35TL039T2 is a 26V LDMOS RF amplifier with 26 terminals, operating from 3300-3700 MHz. It offers 26.5 dB gain and is ideal for narrowband high-power applications at temperatures up to 125°C. This surface-mount component has a characteristic impedance of 50 ohms, making it suitable for various RF and microwave systems.

I/P POWER-MAX (PEAK)=25DBM

50 ohm

COMPONENT

26.5 dB

SURFACE MOUNT

1

26

3700 MHz

3300 MHz

125 Cel

PLASTIC/EPOXY

LCC26,.24X.4,40

26

NARROW BAND HIGH POWER

LDMOS

A3M37TL039T2 by NXP Semiconductors

A3M37TL039T2

NXP Semiconductors

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 26; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; Construction: COMPONENT;

I/P POWER-MAX (PEAK)=25DBM

50 ohm

COMPONENT

26.1 dB

e4

SURFACE MOUNT

1

26

3800 MHz

3600 MHz

125 Cel

PLASTIC/EPOXY

LCC26,.24X.4,40

26

NARROW BAND HIGH POWER

LDMOS

NICKEL PALLADIUM GOLD

AFSC5G23E37T2 by NXP Semiconductors

AFSC5G23E37T2

NXP Semiconductors

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 26; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; Maximum Operating Frequency: 2400 MHz;

I/P POWER-MAX (PEAK)=25DBM

50 ohm

COMPONENT

32 dB

SURFACE MOUNT

1

26

2400 MHz

2300 MHz

125 Cel

PLASTIC/EPOXY

LCC26,.24X.4,20

28

NARROW BAND HIGH POWER

LDMOS

A3M40PD012T7 by NXP Semiconductors

A3M40PD012T7

NXP Semiconductors

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 12; Package Body Material: PLASTIC/EPOXY; Minimum Operating Frequency: 2300 MHz; Power Supplies (V): 3.3;

50 ohm

COMPONENT

30 dB

25 dBm

SURFACE MOUNT

1

12

4200 MHz

2300 MHz

125 Cel

PLASTIC/EPOXY

LCC12,.08SQ,20

3.3

WIDE BAND MEDIUM POWER

300 mA

1.38

A3M34TL139T2 by NXP Semiconductors

A3M34TL139T2

NXP Semiconductors

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 26; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; Minimum Operating Frequency: 3300 MHz;

I/P POWER-MAX (PEAK)=25DBM

50 ohm

COMPONENT

25.6 dB

SURFACE MOUNT

1

26

3580 MHz

3300 MHz

125 Cel

PLASTIC/EPOXY

LCC26,.24X.4,20

27

NARROW BAND HIGH POWER

LDMOS

BTS6302UJ by NXP Semiconductors

BTS6302UJ

NXP Semiconductors

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Screening Level: IEC-60134; Maximum Operating Frequency: 5000 MHz;

50 ohm

COMPONENT

33.8 dB

10 dBm

SURFACE MOUNT

1

16

5000 MHz

2300 MHz

115 Cel

-40 Cel

PLASTIC/EPOXY

LCC16,.12SQ,20

5

WIDE BAND MEDIUM POWER

IEC-60134

120 mA

1.67