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8 SRAM 38

SRAM
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Output Enable Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Total Dose (V) Width
23A1024-I/P by Microchip Technology

23A1024-I/P

Microchip Technology

Microchip Technology's 23A1024-I/P is a CMOS SRAM with 128KX8 organization, operating at 1.8/2V. It features synchronous operation, 20MHz clock frequency, and 131072 words capacity. Ideal for industrial applications requiring reliable memory storage in a compact IN-LINE package style.

20 MHz

COMMON/SEPARATE

R-PDIP-T8

e3

9.271 mm

1048576 bit

STANDARD SRAM

8

1

1

8

131072 words

128K

SYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

NO

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

1.8/2

Not Qualified

TS 16949

5.334 mm

.000004 Amp

1.7 V

SRAMs

10 mA

2.2 V

1.7 V

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

23LCV512-I/P by Microchip Technology

23LCV512-I/P

Microchip Technology

23LCV512-I/P by Microchip Technology is a 64KX8 SRAM with 20 MHz clock frequency, operating at -40 to 85 °C. It features a serial interface, 3-STATE output, and common I/O type. Ideal for industrial applications requiring high-speed synchronous memory in a compact IN-LINE package.

20 MHz

COMMON

R-PDIP-T8

e3

9.271 mm

524288 bit

STANDARD SRAM

8

1

1

8

65536 words

64K

SYNCHRONOUS

85 Cel

-40 Cel

64KX8

3-STATE

NO

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

5.334 mm

.00001 Amp

2.5 V

10 mA

5.5 V

2.5 V

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

X24C44P by Xicor

X24C44P

Xicor

X24C44P by Xicor is a 256-bit NON-VOLATILE SRAM with 16x16 organization and 375ns access time. Operating at 5V, it features synchronous mode and 3-STATE output, suitable for commercial applications requiring reliable memory storage in a compact IN-LINE package.

375 ns

EEPROM SOFTWARE STORE/ RECALL; RETENTION/ENDURANCE-100 YEARS/100000 CYCLES

R-PDIP-T8

e0

10.03 mm

256 bit

NON-VOLATILE SRAM

16

1

1

8

16 words

16

SYNCHRONOUS

70 Cel

0 Cel

16X16

3-STATE

NO

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

5

Not Qualified

4.07 mm

.00005 Amp

SRAMs

10 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

CY14MB256J2-SXI by Cypress Semiconductor

CY14MB256J2-SXI

Cypress Semiconductor

CY14MB256J2-SXI by Cypress Semiconductor is a 32Kx8 NON-VOLATILE SRAM with 262144-bit memory density. Operating at 3V, it features SYNCHRONOUS mode and SERIAL interface. Ideal for industrial applications, this SRAM has a small outline package and operates b/w -40 to 85°C.

R-PDSO-G8

e4

4.889 mm

262144 bit

NON-VOLATILE SRAM

8

3

1

8

32768 words

32K

SYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

260

3

Not Qualified

1.727 mm

.00015 Amp

SRAMs

3 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

GULL WING

1.27 mm

DUAL

3.8985 mm

23A256-I/SN by Microchip Technology

23A256-I/SN

Microchip Technology

23A256-I/SN by Microchip Technology is a 32Kx8 SRAM with 16 MHz clock frequency, operating at 1.8V. It features separate I/O, synchronous operation, and 3-STATE output. Ideal for industrial applications requiring high-speed memory access in a small outline package.

16 MHz

SEPARATE

R-PDSO-G8

e3

4.9 mm

262144 bit

STANDARD SRAM

8

3

1

1

8

32768 words

32K

SYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

NO

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

SERIAL

260

1.8

Not Qualified

1.75 mm

.000001 Amp

1.5 V

SRAMs

10 mA

1.95 V

1.5 V

1.8

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

40

3.9 mm

23A640-I/P by Microchip Technology

23A640-I/P

Microchip Technology

23A640-I/P by Microchip Technology is an 8Kx8 SRAM with 16 MHz clock frequency, operating at -40 to 85 °C. It features a CMOS technology, serial interface, and 65536 bit memory density. Ideal for industrial applications requiring reliable synchronous memory solutions.

16 MHz

SEPARATE

R-PDIP-T8

e3

9.271 mm

65536 bit

STANDARD SRAM

8

1

1

8

8192 words

8K

SYNCHRONOUS

85 Cel

-40 Cel

8KX8

3-STATE

NO

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

1.8

Not Qualified

TS 16949

5.334 mm

.000001 Amp

1.5 V

SRAMs

10 mA

1.95 V

1.5 V

1.8

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

23A640-I/SN by Microchip Technology

23A640-I/SN

Microchip Technology

Microchip Technology's 23A640-I/SN is an 8Kx8 SRAM with a memory density of 65536 bit. Operating at 1.8V, it offers a max clock frequency of 16MHz and features synchronous operation. Ideal for industrial applications requiring high-speed data storage in compact spaces.

16 MHz

SEPARATE

R-PDSO-G8

e3

4.9 mm

65536 bit

STANDARD SRAM

8

3

1

1

8

8192 words

8K

SYNCHRONOUS

85 Cel

-40 Cel

8KX8

3-STATE

NO

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

SERIAL

260

1.8

Not Qualified

TS 16949

1.75 mm

.000001 Amp

1.5 V

SRAMs

10 mA

1.95 V

1.5 V

1.8

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

40

3.9 mm

23A640-I/ST by Microchip Technology

23A640-I/ST

Microchip Technology

Microchip Technology's 23A640-I/ST is an 8Kx8 SRAM with a max clock frequency of 16MHz. Operating at 1.8V, it features separate I/O and offers a memory density of 65536 bits. Ideal for industrial applications requiring high-speed synchronous memory in a small outline package.

16 MHz

SEPARATE

R-PDSO-G8

e3

4.4 mm

65536 bit

STANDARD SRAM

8

1

1

1

8

8192 words

8K

SYNCHRONOUS

85 Cel

-40 Cel

8KX8

3-STATE

NO

PLASTIC/EPOXY

TSSOP

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

260

1.8

Not Qualified

TS 16949

1.2 mm

.000001 Amp

1.5 V

SRAMs

10 mA

1.95 V

1.5 V

1.8

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.65 mm

DUAL

40

3 mm

23K256-I/P by Microchip Technology

23K256-I/P

Microchip Technology

23K256-I/P by Microchip Technology is a 32KX8 SRAM with a max clock frequency of 20 MHz. It operates at a nominal voltage of 3V and has a memory density of 262144 bit. This memory IC type is commonly used in industrial applications requiring high-speed data storage.

20 MHz

SEPARATE

R-PDIP-T8

e3

9.271 mm

262144 bit

STANDARD SRAM

8

1

1

8

32768 words

32K

SYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

NO

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

3/3.3

Not Qualified

5.334 mm

.000004 Amp

2.7 V

SRAMs

10 mA

3.6 V

2.7 V

3

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

PCF8570P/F5,112 by NXP Semiconductors

PCF8570P/F5,112

NXP Semiconductors

STANDARD SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; JESD-609 Code: e4;

2-WIRE I2C SERIAL INTERFACE

.1 MHz

COMMON

R-PDIP-T8

e4

9.5 mm

2048 bit

STANDARD SRAM

8

1

1

8

256 words

256

SYNCHRONOUS

85 Cel

-40 Cel

256X8

OPEN-DRAIN

NO

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

3/5

Not Qualified

4.2 mm

.0000004 Amp

1 V

SRAMs

.2 mA

6 V

2.5 V

5

NO

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

PCF8570T/F5,512 by NXP Semiconductors

PCF8570T/F5,512

NXP Semiconductors

STANDARD SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Power Supplies (V): 3/5;

3400 ns

2-WIRE I2C SERIAL INTERFACE

.1 MHz

COMMON

R-PDSO-G8

e4

7.55 mm

2048 bit

STANDARD SRAM

8

2

1

1

8

256 words

256

SYNCHRONOUS

85 Cel

-40 Cel

256X8

OPEN-DRAIN

NO

PLASTIC/EPOXY

SOP

SOP8,.4

RECTANGULAR

SMALL OUTLINE

SERIAL

260

3/5

Not Qualified

2.65 mm

.0000004 Amp

1 V

SRAMs

.2 mA

6 V

2.5 V

5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

GULL WING

1.27 mm

DUAL

7.5 mm

PCF8570T/F5,518 by NXP Semiconductors

PCF8570T/F5,518

NXP Semiconductors

STANDARD SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Technology: CMOS;

3400 ns

2-WIRE I2C SERIAL INTERFACE

.1 MHz

COMMON

R-PDSO-G8

e4

7.55 mm

2048 bit

STANDARD SRAM

8

2

1

1

8

256 words

256

SYNCHRONOUS

85 Cel

-40 Cel

256X8

OPEN-DRAIN

NO

PLASTIC/EPOXY

SOP

SOP8,.4

RECTANGULAR

SMALL OUTLINE

SERIAL

3/5

Not Qualified

2.65 mm

1 V

SRAMs

6 V

2.5 V

5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

GULL WING

1.27 mm

DUAL

7.5 mm

N25S818HAS21I by Onsemi

N25S818HAS21I

Onsemi

N25S818HAS21I by Onsemi is a 32Kx8 SRAM with 16MHz clock frequency, operating at -40 to 85°C. It features separate I/O, 1.8V supply voltage, and 3-STATE output. Ideal for industrial applications requiring high-speed synchronous memory in a small outline package.

16 MHz

SEPARATE

R-PDSO-G8

e3

4.9 mm

262144 bit

STANDARD SRAM

8

3

1

1, (3 LINE)

8

32768 words

32K

SYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

260

1.8

Not Qualified

1.75 mm

.0000005 Amp

1.7 V

SRAMs

10 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

30

3.91 mm

N25S818HAT21I by Onsemi

N25S818HAT21I

Onsemi

N25S818HAT21I by Onsemi is a 32KX8 SRAM with 1.8V supply, operating at -40 to 85 °C. It features synchronous mode, 16 MHz clock frequency, and 0.65mm terminal pitch. Ideal for industrial applications requiring high-speed memory with low power consumption.

16 MHz

SEPARATE

R-PDSO-G8

e3

4.4 mm

262144 bit

STANDARD SRAM

8

3

1

1, (3 LINE)

8

32768 words

32K

SYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

260

1.8

Not Qualified

1.1 mm

.0000005 Amp

1.7 V

SRAMs

10 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.65 mm

DUAL

30

3 mm

N64S830HAS22I by Onsemi

N64S830HAS22I

Onsemi

N64S830HAS22I by Onsemi is an 8KX8 SRAM with 3-STATE output, operating at 20 MHz clock frequency. It has a memory density of 65536 bit and operates at industrial temperature grade. Ideal for applications requiring fast synchronous memory access in compact designs.

20 MHz

SEPARATE

R-PDSO-G8

e3

4.9 mm

65536 bit

STANDARD SRAM

8

3

1

1, (3 LINE)

8

8192 words

8K

SYNCHRONOUS

85 Cel

-40 Cel

8KX8

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

260

2.5/3.3

Not Qualified

1.75 mm

.000004 Amp

2.3 V

SRAMs

10 mA

3.6 V

2.5 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

30

3.9 mm

N64S830HAT22I by Onsemi

N64S830HAT22I

Onsemi

N64S830HAT22I by Onsemi is an 8Kx8 SRAM with 3.6V max supply voltage, 20MHz clock frequency, and -40 to 85°C operating temperature range. Ideal for industrial applications requiring fast synchronous memory access in a compact 0.65mm pitch package.

20 MHz

SEPARATE

R-PDSO-G8

e3

4.4 mm

65536 bit

STANDARD SRAM

8

3

1

1, (3 LINE)

8

8192 words

8K

SYNCHRONOUS

85 Cel

-40 Cel

8KX8

3-STATE

PLASTIC/EPOXY

TSOP2

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

SERIAL

260

2.5/3.3

Not Qualified

1.2 mm

.000004 Amp

2.3 V

SRAMs

10 mA

3.6 V

2.5 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.65 mm

DUAL

30

3 mm

N25S830HAS22I by Onsemi

N25S830HAS22I

Onsemi

N25S830HAS22I by Onsemi is a 32KX8 SRAM with synchronous operation and 3-STATE output. It operates at 3V, has a clock frequency of 20MHz, and is ideal for industrial applications requiring high-speed memory access in small outline packages.

20 MHz

SEPARATE

R-PDSO-G8

e3

4.9 mm

262144 bit

STANDARD SRAM

8

3

1

1, (3 LINE)

8

32768 words

32K

SYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

260

3/3.3

Not Qualified

1.75 mm

.000004 Amp

2.7 V

SRAMs

10 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

30

3.91 mm

N25S830HAT22I by Onsemi

N25S830HAT22I

Onsemi

N25S830HAT22I by Onsemi is a 32KX8 SRAM with 3-STATE output, operating at 20 MHz. Ideal for industrial applications, it features a supply voltage of 2.7-3.6V and operates in synchronous mode with separate I/O type. Package style is small outline, thin profile, shrink pitch, making it suitable for compact designs.

20 MHz

SEPARATE

R-PDSO-G8

e3

4.4 mm

262144 bit

STANDARD SRAM

8

3

1

1, (3 LINE)

8

32768 words

32K

SYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

260

3/3.3

Not Qualified

1.1 mm

.000004 Amp

2.7 V

SRAMs

10 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.65 mm

DUAL

30

3 mm

N64S818HAS21I by Onsemi

N64S818HAS21I

Onsemi

N64S818HAS21I by Onsemi is an 8KX8 SRAM with 16 MHz clock frequency, 1.8V supply, and -40 to 85 °C operating range. Ideal for industrial applications requiring small outline package and separate I/O type in a synchronous mode setup.

16 MHz

SEPARATE

R-PDSO-G8

e3

4.9 mm

65536 bit

STANDARD SRAM

8

3

1

1, (3 LINE)

8

8192 words

8K

SYNCHRONOUS

85 Cel

-40 Cel

8KX8

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

260

1.8

Not Qualified

1.75 mm

.0000005 Amp

1.7 V

SRAMs

10 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

30

3.91 mm

N64S818HAT21I by Onsemi

N64S818HAT21I

Onsemi

N64S818HAT21I by Onsemi is an 8KX8 SRAM with 16 MHz clock frequency, 1.8V supply voltage, and -40 to 85 °C operating temperature range. Ideal for industrial applications requiring fast synchronous memory access in a compact 0.65mm pitch package.

16 MHz

SEPARATE

R-PDSO-G8

e3

4.4 mm

65536 bit

STANDARD SRAM

8

3

1

1, (3 LINE)

8

8192 words

8K

SYNCHRONOUS

85 Cel

-40 Cel

8KX8

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

260

1.8

Not Qualified

1.1 mm

.0000005 Amp

1.7 V

SRAMs

10 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.65 mm

DUAL

30

3 mm

23K640-E/P by Microchip Technology

23K640-E/P

Microchip Technology

23K640-E/P by Microchip Technology is a CMOS SRAM with 8Kx8 organization and 65536-bit memory density. It operates at a max clock frequency of 16 MHz and has a nominal voltage of 3V. This memory IC is commonly used in automotive applications due to its TS16949 screening level and temperature grade.

16 MHz

SEPARATE

R-PDIP-T8

e3

9.271 mm

65536 bit

STANDARD SRAM

8

1

1

8

8192 words

8K

SYNCHRONOUS

125 Cel

-40 Cel

8KX8

3-STATE

NO

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

3/3.3

Not Qualified

TS 16949

5.334 mm

.00001 Amp

2.7 V

SRAMs

10 mA

3.6 V

2.7 V

3

NO

CMOS

AUTOMOTIVE

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

23K640-E/ST by Microchip Technology

23K640-E/ST

Microchip Technology

23K640-E/ST by Microchip Technology is a CMOS SRAM with 8Kx8 organization, operating at up to 16 MHz. It features separate I/O, 3-state output characteristics, and operates in automotive temperature grade applications.

16 MHz

SEPARATE

R-PDSO-G8

e3

4.4 mm

65536 bit

STANDARD SRAM

8

1

1

1

8

8192 words

8K

SYNCHRONOUS

125 Cel

-40 Cel

8KX8

3-STATE

NO

PLASTIC/EPOXY

TSSOP

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

260

3/3.3

Not Qualified

TS 16949

1.2 mm

.00001 Amp

2.7 V

SRAMs

10 mA

3.6 V

2.7 V

3

YES

CMOS

AUTOMOTIVE

MATTE TIN

GULL WING

.65 mm

DUAL

40

3 mm

23K640T-E/ST by Microchip Technology

23K640T-E/ST

Microchip Technology

23K640T-E/ST by Microchip Technology is a 8Kx8 SRAM with 16MHz clock frequency, operating at -40 to 125°C. It has separate I/O, 3-state output, and serial interface. Ideal for automotive applications due to TS16949 screening level and low standby current of 0.00001A.

16 MHz

SEPARATE

R-PDSO-G8

e3

4.4 mm

65536 bit

STANDARD SRAM

8

1

1

1

8

8192 words

8K

SYNCHRONOUS

125 Cel

-40 Cel

8KX8

3-STATE

NO

PLASTIC/EPOXY

TSSOP

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

260

3/3.3

Not Qualified

TS 16949

1.2 mm

.00001 Amp

2.7 V

SRAMs

10 mA

3.6 V

2.7 V

3

YES

CMOS

AUTOMOTIVE

MATTE TIN

GULL WING

.65 mm

DUAL

40

3 mm

CAT24C44VI-T3 by Onsemi

CAT24C44VI-T3

Onsemi

CAT24C44VI-T3 by Onsemi is a 256-bit non-volatile SRAM with 16x16 organization. Operating at 5V, it has a max standby current of 0.00003A and operates in industrial temperature range (-40 to 85°C). Ideal for applications requiring small outline packages and synchronous operation.

R-PDSO-G8

e3

4.9 mm

256 bit

NON-VOLATILE SRAM

16

1

1

8

16 words

16

SYNCHRONOUS

85 Cel

-40 Cel

16X16

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

260

5

Not Qualified

1.75 mm

.00003 Amp

SRAMs

3 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN

GULL WING

1.27 mm

DUAL

30

3.9 mm

23LC1024T-E/SN by Microchip Technology

23LC1024T-E/SN

Microchip Technology

23LC1024T-E/SN by Microchip Technology is a synchronous SRAM with 128KX8 organization and 1048576 bit memory density. It operates at a max clock frequency of 16 MHz and has a min standby voltage of 2.5 V. This memory IC is commonly used in automotive applications due to its TS 16949 screening level and temperature grade.

16 MHz

COMMON/SEPARATE

R-PDSO-G8

e3

4.9 mm

1048576 bit

STANDARD SRAM

8

1

1

1

8

131072 words

128K

SYNCHRONOUS

125 Cel

-40 Cel

128KX8

3-STATE

NO

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

SERIAL

260

3/5

Not Qualified

TS 16949

1.75 mm

.00002 Amp

2.5 V

SRAMs

10 mA

5.5 V

2.5 V

5

YES

CMOS

AUTOMOTIVE

MATTE TIN

GULL WING

1.27 mm

DUAL

3.9 mm

N01S818HAT22I by Onsemi

N01S818HAT22I

Onsemi

N01S818HAT22I by Onsemi is a 128KX8 SRAM with synchronous operation. It features a small outline, thin profile package and operates in industrial temperature range (-40 to 85 °C). Ideal for applications requiring high-speed memory access in compact electronic devices.

R-PDSO-G8

e3

4.4 mm

1048576 bit

STANDARD SRAM

8

3

1

8

131072 words

128K

SYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

260

1.1 mm

2.2 V

1.7 V

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.65 mm

DUAL

30

3 mm

23LC1024-I/SNVAO by Microchip Technology

23LC1024-I/SNVAO

Microchip Technology

Microchip Technology's 23LC1024-I/SNVAO is a 128KX8 SRAM with synchronous operation and 3-STATE output. It operates at up to 20 MHz clock frequency, suitable for industrial applications requiring high-speed memory access. With a small outline package style and low standby current of 0.00001 Amp, it is ideal for space-constrained designs in automotive electronics.

20 MHz

COMMON/SEPARATE

R-PDSO-G8

e3

4.9 mm

1048576 bit

STANDARD SRAM

8

1

1

8

131072 words

128K

SYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

NO

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

SERIAL

AEC-Q100; TS 16949

1.75 mm

.00001 Amp

2.5 V

10 mA

5.5 V

2.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

3.9 mm

48L256-I/SN by Microchip Technology

48L256-I/SN

Microchip Technology

STANDARD SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Operating Mode: SYNCHRONOUS;

66 MHz

COMMON

R-PDSO-G8

e3

4.9 mm

262144 bit

STANDARD SRAM

8

1

1

8

32768 words

32K

SYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

NO

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

SERIAL

1.75 mm

.0003 Amp

2.7 V

5 mA

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

3.9 mm

48L512-I/SN by Microchip Technology

48L512-I/SN

Microchip Technology

48L512-I/SN by Microchip Technology is a 64KX8 SRAM with 66 MHz clock frequency, operating at -40 to 85 °C. It features 3-STATE output characteristics and operates on CMOS technology. Ideal for industrial applications requiring high-speed synchronous memory with common I/O type in a small outline package.

66 MHz

COMMON

R-PDSO-G8

e3

4.9 mm

524288 bit

STANDARD SRAM

8

1

1

8

65536 words

64K

SYNCHRONOUS

85 Cel

-40 Cel

64KX8

3-STATE

NO

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

SERIAL

1.75 mm

.0002 Amp

2.7 V

5 mA

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

3.9 mm

48L512T-I/SN by Microchip Technology

48L512T-I/SN

Microchip Technology

48L512T-I/SN by Microchip is a 64KX8 SRAM with 66 MHz clock frequency, 3-STATE output, and operates at -40 to 85 °C. Ideal for industrial applications requiring fast synchronous memory access in a small outline package.

66 MHz

COMMON

R-PDSO-G8

e3

4.9 mm

524288 bit

STANDARD SRAM

8

1

1

8

65536 words

64K

SYNCHRONOUS

85 Cel

-40 Cel

64KX8

3-STATE

NO

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

SERIAL

1.75 mm

.0002 Amp

2.7 V

5 mA

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

3.9 mm

48L640-I/SN by Microchip Technology

48L640-I/SN

Microchip Technology

48L640-I/SN by Microchip Technology is an 8Kx8 SRAM with a memory density of 65536 bit. It operates at a max clock frequency of 66 MHz and has a min standby voltage of 2.7 V. Ideal for industrial applications requiring fast synchronous memory access in a small outline package.

66 MHz

COMMON

R-PDSO-G8

e3

4.9 mm

65536 bit

STANDARD SRAM

8

1

1

8

8192 words

8K

SYNCHRONOUS

85 Cel

-40 Cel

8KX8

3-STATE

NO

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

SERIAL

1.75 mm

.0002 Amp

2.7 V

5 mA

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

3.9 mm

48L640T-I/SN by Microchip Technology

48L640T-I/SN

Microchip Technology

48L640T-I/SN by Microchip Technology is an 8Kx8 SRAM with a memory density of 65536 bit. It operates in synchronous mode at a max clock frequency of 66 MHz, suitable for industrial applications requiring fast and reliable data storage. With a small outline package style and common I/O type, it offers high performance in a compact form factor.

66 MHz

COMMON

R-PDSO-G8

e3

4.9 mm

65536 bit

STANDARD SRAM

8

1

1

8

8192 words

8K

SYNCHRONOUS

85 Cel

-40 Cel

8KX8

3-STATE

NO

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

SERIAL

1.75 mm

.0002 Amp

2.7 V

5 mA

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

3.9 mm

48LM01-I/SM by Microchip Technology

48LM01-I/SM

Microchip Technology

48LM01-I/SM by Microchip Technology is a 128KX8 SRAM with synchronous operation and 66 MHz clock frequency. Ideal for industrial applications, it features a small outline package, 3-STATE output, and operates in the -40 to 85 °C temperature range.

66 MHz

COMMON

R-PDSO-G8

e3

5.26 mm

1048576 bit

STANDARD SRAM

8

1

1

1

8

131072 words

128K

SYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

NO

PLASTIC/EPOXY

SOP

SOP8,.3

RECTANGULAR

SMALL OUTLINE

SERIAL

260

2.03 mm

.0002 Amp

2.7 V

5 mA

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

5.25 mm

48LM01T-I/SM by Microchip Technology

48LM01T-I/SM

Microchip Technology

48LM01T-I/SM by Microchip Technology is a 128KX8 SRAM with 66 MHz clock frequency, operating at -40 to 85 °C. It features synchronous operation, 3-STATE output, and common I/O type. Ideal for industrial applications requiring high-speed memory access in a small outline package.

66 MHz

COMMON

R-PDSO-G8

e3

5.26 mm

1048576 bit

STANDARD SRAM

8

1

1

1

8

131072 words

128K

SYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

NO

PLASTIC/EPOXY

SOP

SOP8,.3

RECTANGULAR

SMALL OUTLINE

SERIAL

260

2.03 mm

.0002 Amp

2.7 V

5 mA

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

5.25 mm

IS66WVS4M8ALL-104NLI by Integrated Silicon Solution

IS66WVS4M8ALL-104NLI

Integrated Silicon Solution

IS66WVS4M8ALL-104NLI by Integrated Silicon Solution is a 4MX8 SRAM with synchronous operation and 104 MHz clock frequency. It has a memory density of 33554432 bit and operates at an industrial temperature grade. Ideal for applications requiring high-speed data processing in compact electronic devices.

104 MHz

COMMON

R-PDSO-G8

4.9 mm

33554432 bit

STANDARD SRAM

8

1

1

8

4194304 words

4M

SYNCHRONOUS

85 Cel

-40 Cel

4MX8

NO

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

1.75 mm

.0002 Amp

1.65 V

15 mA

1.95 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

3.9 mm

IS66WVS2M8BLL-104NLI by Integrated Silicon Solution

IS66WVS2M8BLL-104NLI

Integrated Silicon Solution

IS66WVS2M8BLL-104NLI by Integrated Silicon Solution is a 2MX8 SRAM with synchronous operation and 104 MHz clock frequency. It has a memory density of 16Mb and operates at an industrial temperature grade. Ideal for applications requiring fast, reliable memory storage in compact electronic devices.

104 MHz

COMMON

R-PDSO-G8

4.9 mm

16777216 bit

STANDARD SRAM

8

1

1

8

2097152 words

2M

SYNCHRONOUS

85 Cel

-40 Cel

2MX8

NO

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

1.75 mm

.0002 Amp

2.7 V

15 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

3.9 mm

CY14ME064J2-SXQT by Infineon Technologies

CY14ME064J2-SXQT

Infineon Technologies

NON-VOLATILE SRAM; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Output Enable: NO; Organization: 8KX8;

3.4 MHz

COMMON

R-PDSO-G8

4.889 mm

65536 bit

NON-VOLATILE SRAM

8

3

1

1

8

8192 words

8K

SYNCHRONOUS

105 Cel

-40 Cel

8KX8

NO

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

1.727 mm

.00025 Amp

4.5 V

4 mA

5.5 V

4.5 V

5

YES

CMOS

GULL WING

1.27 mm

DUAL

3.8985 mm

CY14ME064Q2A-SXQT by Infineon Technologies

CY14ME064Q2A-SXQT

Infineon Technologies

NON-VOLATILE SRAM; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Output Characteristics: 3-STATE; Output Enable: NO;

40 MHz

COMMON

R-PDSO-G8

4.889 mm

65536 bit

NON-VOLATILE SRAM

8

1

1

8

8192 words

8K

SYNCHRONOUS

105 Cel

-40 Cel

8KX8

3-STATE

NO

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

1.727 mm

.00025 Amp

4.5 V

6 mA

5.5 V

4.5 V

5

YES

CMOS

GULL WING

1.27 mm

DUAL

3.8985 mm