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MEMORY CIRCUIT Other Function Memory ICs 198

Other Function Memory ICs
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Maximum Clock Frequency (fCLK) Minimum Data Retention Time Endurance Input/Output Type I2C Control Byte JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Screening Level Maximum Seated Height Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Type Width Write Protection
MR256D08BMA45 by Everspin Technologies

MR256D08BMA45

Everspin Technologies

MR256D08BMA45 by Everspin Technologies is a 32KX8 memory circuit with a density of 262144 bits. It operates asynchronously at a nominal voltage of 3.3V and has a max access time of 45ns. This memory IC is suitable for various applications requiring high-speed data storage and retrieval.

45 ns

S-PBGA-B48

8 mm

262144 bit

MEMORY CIRCUIT

8

1

48

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

PLASTIC/EPOXY

LFBGA

BGA48,6X8,30

SQUARE

GRID ARRAY, LOW PROFILE, FINE PITCH

260

3.3

Not Qualified

1.35 mm

.008 Amp

Other Memory ICs

65 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

BALL

.75 mm

BOTTOM

40

8 mm

MR256A08BCMA35R by Everspin Technologies

MR256A08BCMA35R

Everspin Technologies

MR256A08BCMA35R by Everspin Technologies is a 32KX8 MEMORY CIRCUIT with 262144 bit Memory Density. Operating at 3.3V, it has a Max Access Time of 35ns and Industrial Temperature Grade. Suitable for applications requiring low profile, fine pitch GRID ARRAY packages in industrial environments.

35 ns

S-PBGA-B48

8 mm

262144 bit

MEMORY CIRCUIT

8

3

1

48

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

LFBGA

BGA48,6X8,30

SQUARE

GRID ARRAY, LOW PROFILE, FINE PITCH

3.3

Not Qualified

1.35 mm

.007 Amp

SRAMs

65 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.75 mm

BOTTOM

8 mm

MR256A08BCMA35 by Everspin Technologies

MR256A08BCMA35

Everspin Technologies

MR256A08BCMA35 by Everspin: 32KX8 memory IC with 262144 bit density, operates at 3.3V, has 35ns access time. Ideal for industrial applications requiring low profile, fine pitch package style and asynchronous operation.

35 ns

S-PBGA-B48

8 mm

262144 bit

MEMORY CIRCUIT

8

3

1

48

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

LFBGA

BGA48,6X8,30

SQUARE

GRID ARRAY, LOW PROFILE, FINE PITCH

3.3

Not Qualified

1.35 mm

.007 Amp

SRAMs

65 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.75 mm

BOTTOM

8 mm

MR256A08BCYS35R by Everspin Technologies

MR256A08BCYS35R

Everspin Technologies

MR256A08BCYS35R by Everspin: 32KX8 memory IC with 262144 bit density, operates at 3.3V, and has a max access time of 35ns. Ideal for industrial applications requiring fast asynchronous memory operations in a compact package.

35 ns

R-PDSO-G44

18.41 mm

262144 bit

MEMORY CIRCUIT

8

3

1

44

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

3.3

Not Qualified

1.2 mm

.007 Amp

SRAMs

65 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

.8 mm

DUAL

10.16 mm

MR256A08BCYS35 by Everspin Technologies

MR256A08BCYS35

Everspin Technologies

MR256A08BCYS35 by Everspin Technologies is a 32Kx8 memory IC with CMOS technology. It operates asynchronously at a nominal voltage of 3.3V, with a max access time of 35ns. This industrial-grade IC is ideal for applications requiring fast and reliable memory storage in compact spaces.

35 ns

R-PDSO-G44

18.41 mm

262144 bit

MEMORY CIRCUIT

8

1

44

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

NOT SPECIFIED

3.3

Not Qualified

1.2 mm

.007 Amp

SRAMs

65 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

.8 mm

DUAL

NOT SPECIFIED

10.16 mm

MR256A08BMA35R by Everspin Technologies

MR256A08BMA35R

Everspin Technologies

MR256A08BMA35R by Everspin: 32KX8 memory IC with 262144 bit density, operates at 3.3V, and has a max access time of 35ns. Ideal for applications requiring low profile, fine pitch grid array packages in commercial temperature grade environments.

35 ns

S-PBGA-B48

8 mm

262144 bit

MEMORY CIRCUIT

8

1

48

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

PLASTIC/EPOXY

LFBGA

BGA48,6X8,30

SQUARE

GRID ARRAY, LOW PROFILE, FINE PITCH

NOT SPECIFIED

3.3

Not Qualified

1.35 mm

.007 Amp

SRAMs

65 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

BALL

.75 mm

BOTTOM

NOT SPECIFIED

8 mm

MR256A08BMA35 by Everspin Technologies

MR256A08BMA35

Everspin Technologies

MR256A08BMA35 by Everspin: 32KX8 memory IC with 262144 bit density, operates at 3.3V, has 35ns access time. Ideal for commercial applications requiring low profile, fine pitch grid array package style.

35 ns

S-PBGA-B48

8 mm

262144 bit

MEMORY CIRCUIT

8

1

48

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

PLASTIC/EPOXY

LFBGA

BGA48,6X8,30

SQUARE

GRID ARRAY, LOW PROFILE, FINE PITCH

NOT SPECIFIED

3.3

Not Qualified

1.35 mm

.007 Amp

SRAMs

65 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

BALL

.75 mm

BOTTOM

NOT SPECIFIED

8 mm

MR256A08BSO35R by Everspin Technologies

MR256A08BSO35R

Everspin Technologies

MR256A08BSO35R by Everspin Tech is a 32Kx8 memory IC with CMOS tech. Operating at 3.3V, it has a max access time of 35ns and standby current of 0.007Amp. Ideal for applications requiring high-speed data storage in commercial-grade environments.

35 ns

R-PDSO-G32

20.726 mm

262144 bit

MEMORY CIRCUIT

8

1

32

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

PLASTIC/EPOXY

SOP

SOP32,.4

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

3.3

Not Qualified

2.54 mm

.007 Amp

SRAMs

65 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

GULL WING

1.25 mm

DUAL

NOT SPECIFIED

7.505 mm

MR256A08BSO35 by Everspin Technologies

MR256A08BSO35

Everspin Technologies

MR256A08BSO35 by Everspin: 32KX8 memory IC with 262144 bit density, operates at 3.3V, and has a max access time of 35ns. Ideal for commercial applications requiring small outline package style and asynchronous operation.

35 ns

R-PDSO-G32

20.726 mm

262144 bit

MEMORY CIRCUIT

8

1

32

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

PLASTIC/EPOXY

SOP

SOP32,.4

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

3.3

Not Qualified

2.54 mm

.007 Amp

SRAMs

65 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

GULL WING

1.25 mm

DUAL

NOT SPECIFIED

7.505 mm

MR256A08BYS35R by Everspin Technologies

MR256A08BYS35R

Everspin Technologies

MR256A08BYS35R by Everspin Technologies is a 32Kx8 memory IC with CMOS technology. It operates asynchronously at 3.3V, has a max access time of 35ns, and consumes up to 65mA. This small outline, thin profile package is ideal for applications requiring fast and reliable memory storage in commercial temperature environments.

35 ns

R-PDSO-G44

18.41 mm

262144 bit

MEMORY CIRCUIT

8

1

44

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

NOT SPECIFIED

3.3

Not Qualified

1.2 mm

.007 Amp

SRAMs

65 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

GULL WING

.8 mm

DUAL

NOT SPECIFIED

10.16 mm

MR256A08BYS35 by Everspin Technologies

MR256A08BYS35

Everspin Technologies

MR256A08BYS35 by Everspin Technologies is a 32Kx8 memory IC with CMOS technology. It operates asynchronously at 3.3V, with a max access time of 35ns. This small outline, thin profile package is ideal for applications requiring high-speed memory solutions in commercial temperature environments.

35 ns

R-PDSO-G44

18.41 mm

262144 bit

MEMORY CIRCUIT

8

1

44

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

NOT SPECIFIED

3.3

Not Qualified

1.2 mm

.007 Amp

SRAMs

65 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

GULL WING

.8 mm

DUAL

NOT SPECIFIED

10.16 mm

MR0A16AMA35R by Everspin Technologies

MR0A16AMA35R

Everspin Technologies

MR0A16AMA35R by Everspin Technologies is a 64KX16 memory IC with 1048576 bit density. Operating at 3.3V, it features a max access time of 35ns and low profile grid array package style. Ideal for applications requiring fast asynchronous memory with high capacity in commercial temperature grade environments.

35 ns

S-PBGA-B48

8 mm

1048576 bit

MEMORY CIRCUIT

16

1

48

65536 words

64K

ASYNCHRONOUS

70 Cel

0 Cel

64KX16

PLASTIC/EPOXY

LFBGA

BGA48,6X8,30

SQUARE

GRID ARRAY, LOW PROFILE, FINE PITCH

NOT SPECIFIED

3.3

Not Qualified

1.35 mm

.012 Amp

SRAMs

155 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

BALL

.75 mm

BOTTOM

NOT SPECIFIED

8 mm

NP5Q128A13ESFC0E by Micron Technology

NP5Q128A13ESFC0E

Micron Technology

MEMORY CIRCUIT; Temperature Grade: COMMERCIAL; No. of Terminals: 16; Package Code: SOP; Package Shape: RECTANGULAR; Terminal Position: DUAL;

R-PDSO-G16

10.3 mm

134217728 bit

MEMORY CIRCUIT

1

1

16

134217728 words

128M

SYNCHRONOUS

70 Cel

0 Cel

128MX1

PLASTIC/EPOXY

SOP

SOP16,.4

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

3/3.3

Not Qualified

2.65 mm

.0002 Amp

SRAMs

50 mA

3.6 V

2.7 V

3

YES

CMOS

COMMERCIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

7.5 mm

NP5Q128AE3ESFC0E by Micron Technology

NP5Q128AE3ESFC0E

Micron Technology

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 16; Package Code: SOP; Package Shape: RECTANGULAR; Maximum Supply Current: 50 mA;

R-PDSO-G16

10.3 mm

134217728 bit

MEMORY CIRCUIT

8

1

16

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX8

PLASTIC/EPOXY

SOP

SOP16,.4

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

3/3.3

Not Qualified

2.65 mm

.0002 Amp

SRAMs

50 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

7.5 mm

NP8P128A13B1760E by Micron Technology

NP8P128A13B1760E

Micron Technology

MEMORY CIRCUIT; Temperature Grade: COMMERCIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; No. of Words Code: 16M;

R-PBGA-B64

10 mm

134217728 bit

MEMORY CIRCUIT

8

1

64

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

COMMERCIAL

BALL

1 mm

BOTTOM

8 mm

NP8P128A13BSM60E by Micron Technology

NP8P128A13BSM60E

Micron Technology

MEMORY CIRCUIT; Temperature Grade: COMMERCIAL; No. of Terminals: 56; Package Code: TSOP1; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 3;

R-PDSO-G56

18.4 mm

134217728 bit

MEMORY CIRCUIT

8

1

56

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

COMMERCIAL

GULL WING

.5 mm

DUAL

14 mm

NP8P128A13T1760E by Micron Technology

NP8P128A13T1760E

Micron Technology

MEMORY CIRCUIT; Temperature Grade: COMMERCIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Memory Density: 134217728 bit;

R-PBGA-B64

10 mm

134217728 bit

MEMORY CIRCUIT

8

1

64

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

COMMERCIAL

BALL

1 mm

BOTTOM

8 mm

NP8P128A13TSM60E by Micron Technology

NP8P128A13TSM60E

Micron Technology

MEMORY CIRCUIT; Temperature Grade: COMMERCIAL; No. of Terminals: 56; Package Code: TSOP1; Package Shape: RECTANGULAR; Surface Mount: YES;

R-PDSO-G56

18.4 mm

134217728 bit

MEMORY CIRCUIT

8

1

56

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

COMMERCIAL

GULL WING

.5 mm

DUAL

14 mm

NP8P128AE3T1760E by Micron Technology

NP8P128AE3T1760E

Micron Technology

Micron Technology's NP8P128AE3T1760E is a 16MX8 memory circuit IC with 134217728-bit density. Operating at 3V, it features synchronous mode and industrial temperature grade. With a package style of grid array and thin profile, it is suitable for applications requiring high-speed data storage and retrieval in various electronic devices.

R-PBGA-B64

10 mm

134217728 bit

MEMORY CIRCUIT

8

1

64

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

8 mm

NP8P128AE3TSM60E by Micron Technology

NP8P128AE3TSM60E

Micron Technology

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSOP1; Package Shape: RECTANGULAR; Terminal Position: DUAL;

R-PDSO-G56

18.4 mm

134217728 bit

MEMORY CIRCUIT

8

1

56

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

14 mm

MR256A08BCSO35 by Everspin Technologies

MR256A08BCSO35

Everspin Technologies

MR256A08BCSO35 by Everspin: 32KX8 memory IC with 262144 bit density, operates at 3.3V, has 35ns access time. Ideal for industrial applications requiring small outline package and asynchronous operation.

35 ns

R-PDSO-G32

20.726 mm

262144 bit

MEMORY CIRCUIT

8

1

32

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

SOP

SOP32,.4

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

3.3

Not Qualified

2.54 mm

.007 Amp

SRAMs

75 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

1.25 mm

DUAL

NOT SPECIFIED

7.505 mm

CC2544RHBT by Texas Instruments

CC2544RHBT

Texas Instruments

The Texas Instruments CC2544RHBT is a square chip carrier with a clock frequency of 2496 MHz, suitable for automotive applications. Operating temperature ranges from -40 to 125°C, with supply voltage ranging from 2V to 3.6V. Ideal for memory circuits requiring high-speed performance in compact designs.

2496 MHz

S-PQCC-N32

e4

5 mm

MEMORY CIRCUIT

3

125 Cel

-40 Cel

PLASTIC/EPOXY

HVQCCN

LCC32,.2SQ,20

SQUARE

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

260

1 mm

3.6 V

2 V

YES

AUTOMOTIVE

NICKEL PALLADIUM GOLD SILVER

NO LEAD

.5 mm

QUAD

30

5 mm

LRI64-W4/1GE by STMicroelectronics

LRI64-W4/1GE

STMicroelectronics

STMicroelectronics LRI64-W4/1GE is a 64-bit memory circuit with CMOS technology. It operates asynchronously in temperatures ranging from -20 °C to 85°C. This surface-mount IC, organized as 64x1, is ideal for applications requiring unencased chip package style and voltage supply of 1.5V to 3V.

X-XUUC-N

64 bit

MEMORY CIRCUIT

1

1

64 words

64

ASYNCHRONOUS

85 Cel

-20 Cel

64X1

UNSPECIFIED

DIE

UNSPECIFIED

UNCASED CHIP

3 V

1.5 V

YES

CMOS

OTHER

NO LEAD

UPPER

MR2A16AMYS35R by Everspin Technologies

MR2A16AMYS35R

Everspin Technologies

MR2A16AMYS35R by Everspin Technologies is a 256Kx16 memory IC with CMOS technology. Operating at 3.3V, it has a temperature range of -40 to 125°C and is AEC-Q100 compliant for automotive applications. This small outline, thin profile package with 44 terminals is ideal for high-performance asynchronous memory needs in automotive electronics.

R-PDSO-G44

18.41 mm

4194304 bit

MEMORY CIRCUIT

16

1

44

262144 words

256K

ASYNCHRONOUS

125 Cel

-40 Cel

256KX16

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

NOT SPECIFIED

AEC-Q100

1.2 mm

3.6 V

3 V

3.3

YES

CMOS

AUTOMOTIVE

GULL WING

.8 mm

DUAL

NOT SPECIFIED

10.16 mm

MR2A16AMYS35 by Everspin Technologies

MR2A16AMYS35

Everspin Technologies

MR2A16AMYS35 by Everspin Tech: 256KX16 memory IC with 4194304 bit density. Operating at -40 to 125 °C, it's AEC-Q100 graded for automotive applications. Features include 3.3V supply, small outline package, and dual terminal position.

R-PDSO-G44

18.41 mm

4194304 bit

MEMORY CIRCUIT

16

1

44

262144 words

256K

ASYNCHRONOUS

125 Cel

-40 Cel

256KX16

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

NOT SPECIFIED

AEC-Q100

1.2 mm

3.6 V

3 V

3.3

YES

CMOS

AUTOMOTIVE

GULL WING

.8 mm

DUAL

NOT SPECIFIED

10.16 mm

MR2A16AVMA35R by Everspin Technologies

MR2A16AVMA35R

Everspin Technologies

MR2A16AVMA35R by Everspin Technologies is a 256Kx16 memory IC with CMOS technology. It operates asynchronously at a nominal voltage of 3.3V, suitable for industrial applications. This low-profile, fine-pitch grid array package has 48 terminals and offers a memory density of 4,194,304 bits.

S-PBGA-B48

8 mm

4194304 bit

MEMORY CIRCUIT

16

1

48

262144 words

256K

ASYNCHRONOUS

105 Cel

-40 Cel

256KX16

PLASTIC/EPOXY

LFBGA

SQUARE

GRID ARRAY, LOW PROFILE, FINE PITCH

NOT SPECIFIED

1.35 mm

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.75 mm

BOTTOM

NOT SPECIFIED

8 mm

MR20H40CDFR by Everspin Technologies

MR20H40CDFR

Everspin Technologies

MR20H40CDFR by Everspin Technologies is a 512KX8 MEMORY IC with 4194304 bit Memory Density. Operating at 3.3V, it has a Max Supply Current of 46.5mA and can withstand temperatures from -40 to 85 °C. Ideal for industrial applications requiring high-speed synchronous memory solutions in a compact form factor.

R-PDSO-N8

6 mm

4194304 bit

MEMORY CIRCUIT

8

3

1

8

524288 words

512K

SYNCHRONOUS

85 Cel

-40 Cel

512KX8

PLASTIC/EPOXY

HVSON

SOLCC8,.25

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

3.3

Not Qualified

.9 mm

.00075 Amp

SRAMs

46.5 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

NO LEAD

1.27 mm

DUAL

5 mm

MB85RS256BPNF-G-JNE1 by Fujitsu

MB85RS256BPNF-G-JNE1

Fujitsu

Fujitsu's MB85RS256BPNF-G-JNE1 is a 262Kb memory IC with 32Kx8 organization, operating at 3.3V. It features synchronous operation, industrial temperature grade, and small outline package suitable for various applications requiring reliable non-volatile memory storage.

R-PDSO-G8

5.05 mm

262144 bit

MEMORY CIRCUIT

8

1

8

32768 words

32K

SYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

3.3

Not Qualified

1.75 mm

.00005 Amp

SRAMs

6 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

3.9 mm

MR10Q010SCR by Everspin Technologies

MR10Q010SCR

Everspin Technologies

Everspin Technologies' MR10Q010SCR is a 128KX8 MEMORY CIRCUIT IC with 1048576 bit Memory Density. Operating at 3.3V, it features SYNCHRONOUS mode and has a small outline package style. Ideal for applications requiring high-speed memory access in commercial temperature environments.

R-PDSO-G16

10.34 mm

1048576 bit

MEMORY CIRCUIT

8

1

16

131072 words

128K

SYNCHRONOUS

70 Cel

0 Cel

128KX8

PLASTIC/EPOXY

SOP

SOP16,.4

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

1.8,3.3

Not Qualified

2.64 mm

.005 Amp

SRAMs

220 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

7.52 mm

TMS4C1050-60DJ by Texas Instruments

TMS4C1050-60DJ

Texas Instruments

TMS4C1050-60DJ by Texas Instruments is a 20-terminal memory IC with 5V supply, operating b/w 0-70°C. It features a max access time of 60ns and standby current of 0.01A, suitable for commercial applications requiring fast memory circuits in small outline packages.

60 ns

R-PDSO-J20

MEMORY CIRCUIT

20

70 Cel

0 Cel

PLASTIC/EPOXY

SOJ

SOJ20/26,.34

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

5

Not Qualified

.01 Amp

Other Memory ICs

35 mA

5

YES

CMOS

COMMERCIAL

J BEND

1.27 mm

DUAL

NOT SPECIFIED

XC17S05PD8C by Xilinx

XC17S05PD8C

Xilinx

MEMORY CIRCUIT; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Length: 9.3599 mm;

10 MHz

COMMON

R-PDIP-T8

e0

9.3599 mm

53984 bit

MEMORY CIRCUIT

1

1

1

8

53984 words

53984

SYNCHRONOUS

70 Cel

0 Cel

53984X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

225

5

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

10 mA

5.25 V

4.75 V

5

NO

CMOS

COMMERCIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S05PD8I by Xilinx

XC17S05PD8I

Xilinx

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Maximum Seated Height: 4.5974 mm;

10 MHz

COMMON

R-PDIP-T8

e0

9.3599 mm

53984 bit

MEMORY CIRCUIT

1

1

1

8

53984 words

53984

SYNCHRONOUS

85 Cel

-40 Cel

53984X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

225

5

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

10 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S05XLPD8C by Xilinx

XC17S05XLPD8C

Xilinx

MEMORY CIRCUIT; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Terminal Finish: TIN LEAD;

10 MHz

COMMON

R-PDIP-T8

e0

9.3599 mm

54544 bit

MEMORY CIRCUIT

1

1

1

8

54544 words

54544

SYNCHRONOUS

70 Cel

0 Cel

54544X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

225

3.3

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S10PD8C by Xilinx

XC17S10PD8C

Xilinx

MEMORY CIRCUIT; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Peak Reflow Temperature (C): 225;

10 MHz

COMMON

R-PDIP-T8

e0

9.3599 mm

95008 bit

MEMORY CIRCUIT

1

1

1

8

95008 words

95008

SYNCHRONOUS

70 Cel

0 Cel

95008X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

225

5

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

10 mA

5.25 V

4.75 V

5

NO

CMOS

COMMERCIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S10PD8I by Xilinx

XC17S10PD8I

Xilinx

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; JESD-30 Code: R-PDIP-T8;

10 MHz

COMMON

R-PDIP-T8

e0

9.3599 mm

95008 bit

MEMORY CIRCUIT

1

1

1

8

95008 words

95008

SYNCHRONOUS

85 Cel

-40 Cel

95008X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

225

5

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

10 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S10XLPD8C by Xilinx

XC17S10XLPD8C

Xilinx

The Xilinx XC17S10XLPD8C is a 95752-bit memory circuit IC with 3.3V supply voltage, operating at up to 10MHz clock frequency. It features synchronous operation, common I/O type, and 3-STATE output characteristics. Ideal for applications requiring low power consumption and high-speed memory access in commercial-grade environments.

10 MHz

COMMON

R-PDIP-T8

e0

9.3599 mm

95752 bit

MEMORY CIRCUIT

1

1

1

8

95752 words

95752

SYNCHRONOUS

70 Cel

0 Cel

95752X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

225

3.3

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S10XLPD8I by Xilinx

XC17S10XLPD8I

Xilinx

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; JESD-30 Code: R-PDIP-T8;

10 MHz

COMMON

R-PDIP-T8

e0

9.3599 mm

95752 bit

MEMORY CIRCUIT

1

1

1

8

95752 words

95752

SYNCHRONOUS

85 Cel

-40 Cel

95752X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

225

3.3

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

NO

CMOS

INDUSTRIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S20PD8C by Xilinx

XC17S20PD8C

Xilinx

The Xilinx XC17S20PD8C is a 178144-bit memory circuit IC with synchronous operation and 3-STATE output. It operates at a max clock frequency of 10 MHz, suitable for applications requiring high-speed memory access. With a package style of IN-LINE and through-hole terminal form, it is commonly used in commercial-grade systems needing reliable memory storage.

10 MHz

COMMON

R-PDIP-T8

e0

9.3599 mm

178144 bit

MEMORY CIRCUIT

1

1

1

8

178144 words

178144

SYNCHRONOUS

70 Cel

0 Cel

178144X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

225

5

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

10 mA

5.25 V

4.75 V

5

NO

CMOS

COMMERCIAL

Tin/Lead (Sn85Pb15)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S20PD8I by Xilinx

XC17S20PD8I

Xilinx

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; JESD-609 Code: e0;

10 MHz

COMMON

R-PDIP-T8

e0

9.3599 mm

178144 bit

MEMORY CIRCUIT

1

1

1

8

178144 words

178144

SYNCHRONOUS

85 Cel

-40 Cel

178144X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

225

5

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

10 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S20XLPD8C by Xilinx

XC17S20XLPD8C

Xilinx

MEMORY CIRCUIT; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Memory Width: 1;

10 MHz

COMMON

R-PDIP-T8

e0

9.3599 mm

179160 bit

MEMORY CIRCUIT

1

1

1

8

179160 words

179160

SYNCHRONOUS

70 Cel

0 Cel

179160X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

225

3.3

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

Tin/Lead (Sn85Pb15)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S20XLPD8I by Xilinx

XC17S20XLPD8I

Xilinx

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Length: 9.3599 mm;

10 MHz

COMMON

R-PDIP-T8

e0

9.3599 mm

179160 bit

MEMORY CIRCUIT

1

1

1

8

179160 words

179160

SYNCHRONOUS

85 Cel

-40 Cel

179160X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

225

3.3

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

NO

CMOS

INDUSTRIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S30PD8C by Xilinx

XC17S30PD8C

Xilinx

MEMORY CIRCUIT; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;

10 MHz

COMMON

R-PDIP-T8

e0

9.3599 mm

247968 bit

MEMORY CIRCUIT

1

1

1

8

247968 words

247968

SYNCHRONOUS

70 Cel

0 Cel

247968X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

225

5

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

10 mA

5.25 V

4.75 V

5

NO

CMOS

COMMERCIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S30PD8I by Xilinx

XC17S30PD8I

Xilinx

XC17S30PD8I by Xilinx is a 247968-bit MEMORY CIRCUIT with 3-STATE output characteristics. Operating at 10 MHz clock frequency, it has an industrial temperature grade and synchronous mode. Commonly used in applications requiring reliable memory storage and retrieval within the industrial sector.

10 MHz

COMMON

R-PDIP-T8

e0

9.3599 mm

247968 bit

MEMORY CIRCUIT

1

1

1

8

247968 words

247968

SYNCHRONOUS

85 Cel

-40 Cel

247968X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

225

5

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

10 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S30XLPD8C by Xilinx

XC17S30XLPD8C

Xilinx

MEMORY CIRCUIT; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Maximum Supply Current: 5 mA;

10 MHz

COMMON

R-PDIP-T8

e0

9.3599 mm

249168 bit

MEMORY CIRCUIT

1

1

1

8

249168 words

249168

SYNCHRONOUS

70 Cel

0 Cel

249168X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

225

3.3

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S30XLPD8I by Xilinx

XC17S30XLPD8I

Xilinx

XC17S30XLPD8I by Xilinx is a 249168-bit MEMORY CIRCUIT with 3.3V supply, operating at up to 10MHz clock frequency. It features an industrial temperature grade range from -40°C to 85°C and offers a synchronous operation mode. This IC is commonly used in applications requiring high-speed memory functions.

10 MHz

COMMON

R-PDIP-T8

e0

9.3599 mm

249168 bit

MEMORY CIRCUIT

1

1

1

8

249168 words

249168

SYNCHRONOUS

85 Cel

-40 Cel

249168X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

225

3.3

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

NO

CMOS

INDUSTRIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S40PD8C by Xilinx

XC17S40PD8C

Xilinx

MEMORY CIRCUIT; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Peak Reflow Temperature (C): 225;

10 MHz

COMMON

R-PDIP-T8

e0

9.3599 mm

329312 bit

MEMORY CIRCUIT

1

1

1

8

329312 words

329312

SYNCHRONOUS

70 Cel

0 Cel

329312X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

225

5

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

10 mA

5.25 V

4.75 V

5

NO

CMOS

COMMERCIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S40PD8I by Xilinx

XC17S40PD8I

Xilinx

XC17S40PD8I by Xilinx is a 329312-bit MEMORY CIRCUIT IC with 3-STATE output, operating at up to 10 MHz clock frequency. It features a synchronous mode, common I/O type, and operates in industrial temperature range. Ideal for applications requiring high memory density and low standby current.

10 MHz

COMMON

R-PDIP-T8

e0

9.3599 mm

329312 bit

MEMORY CIRCUIT

1

1

1

8

329312 words

329312

SYNCHRONOUS

85 Cel

-40 Cel

329312X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

225

5

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

10 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S40XLPD8C by Xilinx

XC17S40XLPD8C

Xilinx

MEMORY CIRCUIT; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Maximum Seated Height: 4.5974 mm;

10 MHz

COMMON

R-PDIP-T8

e0

9.3599 mm

330696 bit

MEMORY CIRCUIT

1

1

1

8

330696 words

330696

SYNCHRONOUS

70 Cel

0 Cel

330696X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

225

3.3

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm