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63 Flash Memory 91

Flash Memory
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Boot Block Maximum Clock Frequency (fCLK) Command User Interface Common Flash Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Type Width Maximum Write Cycle Time (tWC) Write Protection
MT29F16G16ADBCAH4-IT:C by Micron Technology

MT29F16G16ADBCAH4-IT:C

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Terminal Pitch: .8 mm;

30 ns

YES

NO

R-PBGA-B63

11 mm

17179869184 bit

FLASH

16

1

8K

63

1073741824 words

1G

ASYNCHRONOUS

85 Cel

-40 Cel

1GX16

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

2K

PARALLEL

1.8

1.8

Not Qualified

YES

1 mm

128K

.00005 Amp

Flash Memories

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NO

MLC NAND TYPE

9 mm

MT29F8G08ABBCAH4-IT:C by Micron Technology

MT29F8G08ABBCAH4-IT:C

Micron Technology

MT29F8G08ABBCAH4-IT:C by Micron Technology is a 1.8V SLC NAND flash memory with 1GX8 organization, 4K sectors, and 256K sector size. It operates in industrial temperatures (-40 to 85 °C) with parallel interface and 0.8mm terminal pitch. Ideal for applications requiring high memory density and fast access times.

30 ns

YES

NO

R-PBGA-B63

8589934592 bit

FLASH

8

4K

63

1073741824 words

1G

85 Cel

-40 Cel

1GX8

PLASTIC/EPOXY

FBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

4K

PARALLEL

1.8

1.8

Not Qualified

YES

256K

.00005 Amp

Flash Memories

20 mA

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

MT29F1G08ABAFAH4-ITE:F by Micron Technology

MT29F1G08ABAFAH4-ITE:F

Micron Technology

Micron Technology's MT29F1G08ABAFAH4-ITE:F is a 128MX8 SLC NAND flash memory with 1073741824 bit memory density. Operating at 3.3V, it has a temperature range of -40 to 85 °C and uses parallel interface technology. Ideal for industrial applications requiring high-speed data storage in compact devices.

R-PBGA-B63

11 mm

1073741824 bit

FLASH

8

1

63

134217728 words

128M

ASYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

3.3

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NOT SPECIFIED

SLC NAND TYPE

9 mm

MT29F1G08ABADAH4-IT:D by Micron Technology

MT29F1G08ABADAH4-IT:D

Micron Technology

MT29F1G08ABADAH4-IT:D by Micron Technology is a 128Mx8 SLC NAND flash memory with 3.3V programming voltage, operating at -40 to 85°C. It features a 2K word page size, 128K word sector size, and parallel interface. Ideal for industrial applications requiring fast access times and low standby current.

25 ns

YES

NO

R-PBGA-B63

11 mm

1073741824 bit

FLASH

8

1

1K

63

134217728 words

128M

ASYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

2K

PARALLEL

260

3.3

3.3

Not Qualified

YES

1 mm

128K

.0001 Amp

Flash Memories

35 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

30

NO

SLC NAND TYPE

9 mm

MT29F1G08ABBDAH4:D by Micron Technology

MT29F1G08ABBDAH4:D

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Command User Interface: YES;

25 ns

YES

NO

R-PBGA-B63

11 mm

1073741824 bit

FLASH

8

1

1K

63

134217728 words

128M

ASYNCHRONOUS

70 Cel

0 Cel

128MX8

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

2K

PARALLEL

1.8

1.8

Not Qualified

YES

1 mm

128K

.00005 Amp

Flash Memories

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

9 mm

MT29F1G08ABBDAHC-IT:D by Micron Technology

MT29F1G08ABBDAHC-IT:D

Micron Technology

MT29F1G08ABBDAHC-IT:D by Micron Technology is a 128MX8 SLC NAND flash memory with 1.8V supply, operating from -40 to 85 °C. It features a 2K word page size, parallel interface, and industrial temperature grade. Ideal for applications requiring fast access times and high memory density.

25 ns

YES

NO

R-PBGA-B63

e1

13 mm

1073741824 bit

FLASH

8

1

1K

63

134217728 words

128M

ASYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

2K

PARALLEL

1.8

1.8

Not Qualified

YES

1 mm

128K

.00005 Amp

Flash Memories

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

10.5 mm

MT29F1G08ABBDAHC:D by Micron Technology

MT29F1G08ABBDAHC:D

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Maximum Operating Temperature: 70 Cel;

25 ns

YES

NO

R-PBGA-B63

13 mm

1073741824 bit

FLASH

8

1

1K

63

134217728 words

128M

ASYNCHRONOUS

70 Cel

0 Cel

128MX8

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

2K

PARALLEL

1.8

1.8

Not Qualified

YES

1 mm

128K

.00005 Amp

Flash Memories

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

10.5 mm

MT29F1G16ABBDAH4-IT:D by Micron Technology

MT29F1G16ABBDAH4-IT:D

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Terminal Position: BOTTOM;

25 ns

YES

NO

R-PBGA-B63

11 mm

1073741824 bit

FLASH

16

1

1K

63

67108864 words

64M

ASYNCHRONOUS

85 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1K

PARALLEL

1.8

1.8

Not Qualified

YES

1 mm

64K

.00005 Amp

Flash Memories

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

9 mm

MT29F1G16ABBDAH4:D by Micron Technology

MT29F1G16ABBDAH4:D

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Terminal Pitch: .8 mm;

25 ns

YES

NO

R-PBGA-B63

11 mm

1073741824 bit

FLASH

16

1

1K

63

67108864 words

64M

ASYNCHRONOUS

70 Cel

0 Cel

64MX16

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1K

PARALLEL

1.8

1.8

Not Qualified

YES

1 mm

64K

.00005 Amp

Flash Memories

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

9 mm

MT29F1G16ABBDAHC-IT:D by Micron Technology

MT29F1G16ABBDAHC-IT:D

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Programming Voltage (V): 1.8;

25 ns

YES

NO

R-PBGA-B63

13 mm

1073741824 bit

FLASH

16

1

1K

63

67108864 words

64M

ASYNCHRONOUS

85 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1K

PARALLEL

1.8

1.8

Not Qualified

YES

1 mm

64K

.00005 Amp

Flash Memories

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

10.5 mm

MT29F1G16ABBDAHC:D by Micron Technology

MT29F1G16ABBDAHC:D

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Ready or Busy: YES;

25 ns

YES

NO

R-PBGA-B63

13 mm

1073741824 bit

FLASH

16

1

1K

63

67108864 words

64M

ASYNCHRONOUS

70 Cel

0 Cel

64MX16

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1K

PARALLEL

1.8

1.8

Not Qualified

YES

1 mm

64K

.00005 Amp

Flash Memories

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

10.5 mm

MT29F2G01AAAEDH4-ITX:E by Micron Technology

MT29F2G01AAAEDH4-ITX:E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; JESD-30 Code: R-PBGA-B63;

50 MHz

R-PBGA-B63

e1

11 mm

2147483648 bit

FLASH

1

1

63

2147483648 words

2G

SYNCHRONOUS

85 Cel

-40 Cel

2GX1

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

SERIAL

2.7

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

SLC NAND TYPE

9 mm

MT29F1G08ABBEAH4-AITX:E by Micron Technology

MT29F1G08ABBEAH4-AITX:E

Micron Technology

Micron Technology's MT29F1G08ABBEAH4-AITX:E is a 128MX8 SLC NAND flash memory with 1073741824 bit density. Operating at 1.8V, it has a temperature range of -40 to 85 °C and uses parallel interface technology. Ideal for industrial applications due to its very thin profile and fine pitch grid array package style.

R-PBGA-B63

11 mm

1073741824 bit

FLASH

8

1

63

134217728 words

128M

ASYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

1.8

1 mm

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NOT SPECIFIED

SLC NAND TYPE

9 mm

MT29F1G08ABAEAH4-AITX:E by Micron Technology

MT29F1G08ABAEAH4-AITX:E

Micron Technology

Micron Technology's MT29F1G08ABAEAH4-AITX:E is a 128MX8 SLC NAND flash memory with 1073741824 bit density. Operating at 3.3V, it has a temperature range of -40 to 85 °C and uses parallel programming with 0.8mm terminal pitch. Ideal for industrial applications requiring high-speed data storage in compact devices.

R-PBGA-B63

11 mm

1073741824 bit

FLASH

8

1

63

134217728 words

128M

ASYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

2.7

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

SLC NAND TYPE

9 mm

MT29F1G16ABBEAH4-AITX:E by Micron Technology

MT29F1G16ABBEAH4-AITX:E

Micron Technology

Micron Technology's MT29F1G16ABBEAH4-AITX:E is a 64MX16 SLC NAND flash memory with 1073741824-bit density. Operating at 1.8V, it features a very thin profile package style and industrial temperature grade suitability. Ideal for applications requiring high-speed parallel data storage in compact devices.

R-PBGA-B63

11 mm

1073741824 bit

FLASH

16

1

63

67108864 words

64M

ASYNCHRONOUS

85 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

1.8

1 mm

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

SLC NAND TYPE

9 mm

MT29F2G01AAAEDH4-IT:E by Micron Technology

MT29F2G01AAAEDH4-IT:E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Maximum Seated Height: 1 mm;

50 MHz

R-PBGA-B63

e1

11 mm

2147483648 bit

FLASH

1

1

63

2147483648 words

2G

SYNCHRONOUS

85 Cel

-40 Cel

2GX1

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

SERIAL

2.7

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

SLC NAND TYPE

9 mm

MT29F1G08ABBEAH4-IT:E by Micron Technology

MT29F1G08ABBEAH4-IT:E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Peak Reflow Temperature (C): 260;

R-PBGA-B63

e1

11 mm

1073741824 bit

FLASH

8

1

63

134217728 words

128M

ASYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

1.8

1 mm

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

SLC NAND TYPE

9 mm

MT29F2G08ABBEAHC:E by Micron Technology

MT29F2G08ABBEAHC:E

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Type: SLC NAND TYPE;

25 ns

YES

NO

R-PBGA-B63

13 mm

2147483648 bit

FLASH

8

1

2K

63

268435456 words

256M

ASYNCHRONOUS

70 Cel

0 Cel

256MX8

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

2K

PARALLEL

1.8

1.8

Not Qualified

YES

1 mm

128K

.00005 Amp

Flash Memories

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

10.5 mm

NAND512W3A2SZA6E by Micron Technology

NAND512W3A2SZA6E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 63; Package Code: TFBGA; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 2.7 V;

35 ns

YES

NO

R-PBGA-B63

e2

11 mm

536870912 bit

FLASH

8

1

4K

63

67108864 words

64M

ASYNCHRONOUS

85 Cel

-40 Cel

64MX8

PLASTIC/EPOXY

TFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

512

PARALLEL

260

3/3.3

3

Not Qualified

YES

1.05 mm

16K

.00005 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER NICKEL

BALL

.8 mm

BOTTOM

30

NO

SLC NAND TYPE

9 mm

MT29F2G08ABAEAH4-AATX:E by Micron Technology

MT29F2G08ABAEAH4-AATX:E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; No. of Words Code: 256M;

R-PBGA-B63

11 mm

2147483648 bit

FLASH

8

1

63

268435456 words

256M

ASYNCHRONOUS

105 Cel

-40 Cel

256MX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

3.3

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

SLC NAND TYPE

9 mm

MT29F2G08ABAEAWP-AATX:E by Micron Technology

MT29F2G08ABAEAWP-AATX:E

Micron Technology

Micron Technology's MT29F2G08ABAEAWP-AATX:E is a 256MX8 SLC NAND flash memory with 2K sectors. Operating at 3.3V, it offers fast access time of 25ns and industrial temperature grade. With a package style of GRID ARRAY, it is suitable for applications requiring high-speed data storage in harsh environments.

25 ns

YES

NO

R-PBGA-B63

e3

11 mm

2147483648 bit

FLASH

8

1

2K

63

268435456 words

256M

ASYNCHRONOUS

105 Cel

-40 Cel

256MX8

PLASTIC/EPOXY

VFBGA

TSSOP48,.8,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

2K

PARALLEL

260

3/3.3

3.3

Not Qualified

YES

AEC-Q100

1 mm

128K

.0001 Amp

Flash Memories

35 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

BALL

.8 mm

BOTTOM

30

NO

SLC NAND TYPE

9 mm

MT29F2G08ABBEAH4:ETR by Micron Technology

MT29F2G08ABBEAH4:ETR

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Parallel or Serial: PARALLEL;

R-PBGA-B63

e1

11 mm

2147483648 bit

FLASH

8

1

63

268435456 words

256M

ASYNCHRONOUS

70 Cel

0 Cel

256MX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

1.8

1 mm

1.95 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

SLC NAND TYPE

9 mm

MT29F2G16ABDHC:DTR by Micron Technology

MT29F2G16ABDHC:DTR

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Terminal Form: BALL;

R-PBGA-B63

e1

13 mm

2147483648 bit

FLASH

16

1

63

134217728 words

128M

ASYNCHRONOUS

70 Cel

0 Cel

128MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

1.8

1 mm

1.95 V

1.65 V

1.8

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

SLC NAND TYPE

10.5 mm

MT29F2G16ABDHC-ET:DTR by Micron Technology

MT29F2G16ABDHC-ET:DTR

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 1.65 V;

R-PBGA-B63

e1

13 mm

2147483648 bit

FLASH

16

1

63

134217728 words

128M

ASYNCHRONOUS

85 Cel

-40 Cel

128MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

1.8

1 mm

1.95 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

SLC NAND TYPE

10.5 mm

MT29F4G01AAADDHC-ITX:DTR by Micron Technology

MT29F4G01AAADDHC-ITX:DTR

Micron Technology

Micron Technology's MT29F4G01AAADDHC-ITX:DTR is a 3.3V SLC NAND Flash Memory with 4294967296-bit density, operating at up to 50MHz clock frequency. Ideal for industrial applications, it features a very thin profile grid array package and operates in synchronous mode.

50 MHz

R-PBGA-B63

e1

13 mm

4294967296 bit

FLASH

1

1

63

4294967296 words

4G

SYNCHRONOUS

85 Cel

-40 Cel

4GX1

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

SERIAL

3.3

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

SLC NAND TYPE

10.5 mm

MT29F1G01AAADDH4-IT:DTR by Micron Technology

MT29F1G01AAADDH4-IT:DTR

Micron Technology

Micron Technology's MT29F1G01AAADDH4-IT:DTR is a 3.3V SLC NAND Flash Memory with 1073741824-bit memory density. Operating at up to 50MHz, it features a very thin profile grid array package and is suitable for industrial applications requiring high-speed synchronous operation.

50 MHz

R-PBGA-B63

e1

11 mm

1073741824 bit

FLASH

1

1

63

1073741824 words

1G

SYNCHRONOUS

85 Cel

-40 Cel

1GX1

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

SERIAL

2.7

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

SLC NAND TYPE

9 mm

MT29F1G08ABADAH4:DTR by Micron Technology

MT29F1G08ABADAH4:DTR

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 3.3;

R-PBGA-B63

e1

11 mm

1073741824 bit

FLASH

8

1

63

134217728 words

128M

ASYNCHRONOUS

70 Cel

0 Cel

128MX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

3.3

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

SLC NAND TYPE

9 mm

MT29F2G08ABAEAH4-ITX:ETR by Micron Technology

MT29F2G08ABAEAH4-ITX:ETR

Micron Technology

Micron Technology's MT29F2G08ABAEAH4-ITX:ETR is a 256MX8 SLC NAND flash memory with 2147483648-bit density. Operating at 3.3V, it offers industrial-grade temperature range of -40 to 85 °C. Suitable for applications requiring high-speed parallel memory access in compact devices.

R-PBGA-B63

e1

11 mm

2147483648 bit

FLASH

8

1

63

268435456 words

256M

ASYNCHRONOUS

85 Cel

-40 Cel

256MX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

3.3

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

SLC NAND TYPE

9 mm

MT29F1G16ABBEAHC:E by Micron Technology

MT29F1G16ABBEAHC:E

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Operating Mode: ASYNCHRONOUS;

R-PBGA-B63

13 mm

1073741824 bit

FLASH

16

1

63

67108864 words

64M

ASYNCHRONOUS

70 Cel

0 Cel

64MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

1.8

1 mm

1.95 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

SLC NAND TYPE

10.5 mm

W29N01HZBINA by Winbond Electronics

W29N01HZBINA

Winbond Electronics

W29N01HZBINA by Winbond Electronics is a 128MX8 SLC NAND flash memory with 1.8V programming voltage. Operating in industrial temperature range (-40 to 85 °C), it offers high memory density of 1073741824 bits for parallel applications. The package style is grid array, very thin profile, fine pitch, making it suitable for various embedded systems and storage solutions.

R-PBGA-B63

11 mm

1073741824 bit

FLASH

8

1

63

134217728 words

128M

ASYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

1.8

1 mm

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NOT SPECIFIED

SLC NAND TYPE

9 mm

IS34ML01G081-BLI by Integrated Silicon Solution

IS34ML01G081-BLI

Integrated Silicon Solution

IS34ML01G081-BLI by Integrated Silicon Solution is a 128MX8 SLC NAND flash memory with 1073741824 bit density. Operating at 3.3V, it has a temperature range of -40 to 85 °C and uses parallel interface for industrial applications. Measuring 11mm x 9mm x 1mm, this memory IC features a grid array package with very thin profile and fine pitch terminals.

R-PBGA-B63

e1

11 mm

1073741824 bit

FLASH

8

3

1

63

134217728 words

128M

ASYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

3.3

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

10

SLC NAND TYPE

9 mm

MT29F4G08ABBDAH4-ITX:D by Micron Technology

MT29F4G08ABBDAH4-ITX:D

Micron Technology

MT29F4G08ABBDAH4-ITX:D by Micron Technology is a 512Mx8 SLC NAND flash memory with 4K sectors, operating at 1.8V. It features a very thin profile grid array package, suitable for industrial applications requiring fast access times of 25ns and low standby current of 0.00005Amp.

25 ns

YES

NO

R-PBGA-B63

11 mm

4294967296 bit

FLASH

8

1

4K

63

536870912 words

512M

ASYNCHRONOUS

85 Cel

-40 Cel

512MX8

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

2K

PARALLEL

260

1.8

1.8

Not Qualified

YES

1 mm

128K

.00005 Amp

Flash Memories

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

30

NO

SLC NAND TYPE

9 mm

MT29F4G08ABADAH4-AITX:D by Micron Technology

MT29F4G08ABADAH4-AITX:D

Micron Technology

Micron Technology's MT29F4G08ABADAH4-AITX:D is a 512MX8 SLC NAND flash memory with 4294967296 bit density. Operating at 3.3V, it has a programming voltage of 1.8V and supports industrial temperature grade applications. With a compact size of 11mm x 9mm x 1mm, this flash memory features parallel interface and very thin profile package for high-speed data storage solutions.

R-PBGA-B63

11 mm

4294967296 bit

FLASH

8

1

63

536870912 words

512M

ASYNCHRONOUS

85 Cel

-40 Cel

512MX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

1.8

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NOT SPECIFIED

SLC NAND TYPE

9 mm

MT29F1G08ABADAH4-ITX:D by Micron Technology

MT29F1G08ABADAH4-ITX:D

Micron Technology

MT29F1G08ABADAH4-ITX:D by Micron Technology is a 3.3V SLC NAND flash memory with 128Mx8 organization, operating from -40 to 85°C. It features a 2K word page size, 128K word sector size, and parallel interface. Ideal for industrial applications requiring fast access times and low standby current.

25 ns

YES

NO

R-PBGA-B63

e1

11 mm

1073741824 bit

FLASH

8

1

1K

63

134217728 words

128M

ASYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

2K

PARALLEL

3.3

3.3

Not Qualified

YES

1 mm

128K

.0001 Amp

Flash Memories

35 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

9 mm

MT29F1G16ABBEAH4-IT:E by Micron Technology

MT29F1G16ABBEAH4-IT:E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Length: 11 mm;

R-PBGA-B63

11 mm

1073741824 bit

FLASH

16

1

63

67108864 words

64M

ASYNCHRONOUS

85 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

1.8

1 mm

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

SLC NAND TYPE

9 mm

NAND512R3A2SZAXE by Micron Technology

NAND512R3A2SZAXE

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 63; Package Code: TFBGA; Package Shape: RECTANGULAR; Type: SLC NAND TYPE;

45 ns

YES

NO

R-PBGA-B63

11 mm

512753664 bit

FLASH

8

1

4K

63

64094208 words

64M

ASYNCHRONOUS

85 Cel

-40 Cel

64MX8

PLASTIC/EPOXY

TFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

512

PARALLEL

1.8

1.8

Not Qualified

YES

1.05 mm

16K

.00005 Amp

Flash Memories

15 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

9 mm

NAND512W3A2SZAXE by Micron Technology

NAND512W3A2SZAXE

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 63; Package Code: TFBGA; Package Shape: RECTANGULAR; Terminal Position: BOTTOM;

35 ns

YES

NO

R-PBGA-B63

11 mm

512753664 bit

FLASH

8

1

4K

63

64094208 words

64M

ASYNCHRONOUS

85 Cel

-40 Cel

64MX8

PLASTIC/EPOXY

TFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

512

PARALLEL

3/3.3

3

Not Qualified

YES

1.05 mm

16K

.00005 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

9 mm

NAND512R3A2SZA6F by Micron Technology

NAND512R3A2SZA6F

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 63; Package Code: TFBGA; Package Shape: RECTANGULAR; No. of Sectors/Size: 4K;

45 ns

YES

NO

R-PBGA-B63

11 mm

512753664 bit

FLASH

8

1

4K

63

64094208 words

64M

ASYNCHRONOUS

85 Cel

-40 Cel

64MX8

PLASTIC/EPOXY

TFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

512

PARALLEL

1.8

1.8

Not Qualified

YES

1.05 mm

16K

.00005 Amp

Flash Memories

15 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

9 mm

MT29F4G16ABADAH4-AIT:D by Micron Technology

MT29F4G16ABADAH4-AIT:D

Micron Technology

Micron's MT29F4G16ABADAH4-AIT:D is a 256MX16 SLC NAND flash memory with 3.3V programming voltage. Operating in industrial temperatures (-40 to 85°C), it offers 4294967296-bit memory density for parallel applications. The package features a grid array style with bottom terminal position, suitable for surface mount designs.

R-PBGA-B63

e1

4294967296 bit

FLASH

16

1

63

268435456 words

256M

ASYNCHRONOUS

85 Cel

-40 Cel

256MX16

PLASTIC/EPOXY

BGA

RECTANGULAR

GRID ARRAY

PARALLEL

260

3.3

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

BOTTOM

30

SLC NAND TYPE

MT29F2G16ABBEAH4-IT:E by Micron Technology

MT29F2G16ABBEAH4-IT:E

Micron Technology

MT29F2G16ABBEAH4-IT:E by Micron Technology is a 128MX16 SLC NAND flash memory with 1.8V supply, operating from -40 to 85°C. It features a 1K word page size, 64K word sector size, and parallel interface. Ideal for industrial applications requiring fast access times and low standby current.

25 ns

YES

NO

R-PBGA-B63

11 mm

2147483648 bit

FLASH

16

1

2K

63

134217728 words

128M

ASYNCHRONOUS

85 Cel

-40 Cel

128MX16

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1K

PARALLEL

260

1.8

1.8

Not Qualified

YES

1 mm

64K

.00005 Amp

Flash Memories

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

30

NO

SLC NAND TYPE

9 mm

MT29F1G01AAADDH4-ITX:D by Micron Technology

MT29F1G01AAADDH4-ITX:D

Micron Technology

Micron Technology's MT29F1G01AAADDH4-ITX:D is a 1GX1 SLC NAND flash memory with 1073741824-bit density. Operating at 3.3V, it offers synchronous mode and supports up to 50MHz clock frequency. Ideal for industrial applications requiring high-speed data storage in a compact GRID ARRAY package.

50 MHz

R-PBGA-B63

e1

11 mm

1073741824 bit

FLASH

1

1

63

1073741824 words

1G

SYNCHRONOUS

85 Cel

-40 Cel

1GX1

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

SERIAL

260

2.7

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

SLC NAND TYPE

9 mm

MT29F1G08ABBEAH4-ITX:E by Micron Technology

MT29F1G08ABBEAH4-ITX:E

Micron Technology

Micron Technology's MT29F1G08ABBEAH4-ITX:E is a 128Mx8 SLC NAND flash memory with 1.8V supply voltage, operating from -40 to 85°C. Featuring 100K write/erase cycles, it has a page size of 2K words and sector size of 128K words. Ideal for applications requiring high endurance and reliable data storage in compact devices.

NO

YES

100000 Write/Erase Cycles

R-PBGA-B63

11 mm

1073741824 bit

FLASH

8

1

1K

63

134217728 words

128M

ASYNCHRONOUS

85 Cel

-40 Cel

128MX8

3-STATE

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

2K

PARALLEL

1.8

YES

1 mm

128K

.00005 Amp

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

BALL

.8 mm

BOTTOM

YES

SLC NAND TYPE

9 mm

MT29F8G08ADADAH4-IT:DTR by Micron Technology

MT29F8G08ADADAH4-IT:DTR

Micron Technology

Micron Technology's MT29F8G08ADADAH4-IT:DTR is a 3.3V SLC NAND flash memory with 1GX8 organization, offering 2K page size and 128K sector size. It features a very thin profile grid array package suitable for applications requiring high endurance of up to 100,000 write/erase cycles. Operating in asynchronous mode, it has a max temperature of 85°C and min of -40°C, making it ideal for various industrial and automotive uses.

YES

NO

10

100000 Write/Erase Cycles

R-PBGA-B63

11 mm

8589934592 bit

FLASH

8

1

8K

63

1073741824 words

1G

ASYNCHRONOUS

85 Cel

-40 Cel

1GX8

3-STATE

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

2K

PARALLEL

3.3

YES

1 mm

128K

.0001 Amp

35 mA

3.6 V

2.7 V

3.3

YES

CMOS

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

9 mm