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63 Flash Memory 91

Flash Memory
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Boot Block Maximum Clock Frequency (fCLK) Command User Interface Common Flash Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Type Width Maximum Write Cycle Time (tWC) Write Protection
MT29F8G16ADBDAH4:D by Micron Technology

MT29F8G16ADBDAH4:D

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: FBGA; Package Shape: RECTANGULAR; Technology: CMOS;

25 ns

YES

NO

R-PBGA-B63

8589934592 bit

FLASH

16

8K

63

536870912 words

512M

70 Cel

0 Cel

512MX16

PLASTIC/EPOXY

FBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

1K

PARALLEL

1.8

Not Qualified

YES

64K

.00005 Amp

Flash Memories

20 mA

1.8

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

MT29F4G01AAADDHC-IT:D by Micron Technology

MT29F4G01AAADDHC-IT:D

Micron Technology

MT29F4G01AAADDHC-IT:D by Micron Technology is a flash memory with 512MX8 organization and 4294967296 bit memory density. It operates at temperatures ranging from -40 to 85 °C and has a max clock frequency of 50 MHz. It is commonly used in industrial applications requiring high endurance and reliable data storage.

50 MHz

10

100000 Write/Erase Cycles

R-PBGA-B63

4294967296 bit

FLASH

8

63

536870912 words

512M

85 Cel

-40 Cel

512MX8

PLASTIC/EPOXY

FBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

SERIAL

260

3/3.3

Not Qualified

SPI

.00005 Amp

Flash Memories

20 mA

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

30

SLC NAND TYPE

HARDWARE

MT29F4G01AAADDHC:D by Micron Technology

MT29F4G01AAADDHC:D

Micron Technology

MT29F4G01AAADDHC:D by Micron Technology is a 512MX8 SLC NAND flash memory with 4294967296 bit density. It operates at 3/3.3V, has 100000 Write/Erase cycles endurance, and supports SPI serial bus type. Ideal for applications requiring high-speed data storage in commercial temperature environments.

50 MHz

10

100000 Write/Erase Cycles

R-PBGA-B63

4294967296 bit

FLASH

8

63

536870912 words

512M

70 Cel

0 Cel

512MX8

PLASTIC/EPOXY

FBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

SERIAL

3/3.3

Not Qualified

SPI

.00005 Amp

Flash Memories

20 mA

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

SLC NAND TYPE

HARDWARE

MT29F1G16ABBDAH4-ITX:D by Micron Technology

MT29F1G16ABBDAH4-ITX:D

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 63; Package Code: FBGA; Package Shape: RECTANGULAR; Parallel or Serial: PARALLEL;

25 ns

YES

NO

R-PBGA-B63

e1

FLASH

16

1K

63

67108864 words

64M

85 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

FBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

1K

PARALLEL

260

1.8

Not Qualified

YES

64K

.00005 Amp

Flash Memories

20 mA

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

NO

SLC NAND TYPE

MT29F2G08ABAEAH4-ITX:E by Micron Technology

MT29F2G08ABAEAH4-ITX:E

Micron Technology

MT29F2G08ABAEAH4-ITX:E by Micron Technology is a 256MX8 SLC NAND flash memory with 2K sectors, 128K sector size, and 268M words. It operates at -40 to 85 °C, with 0.8mm terminal pitch and 0.0001A standby current. Ideal for industrial applications requiring fast access time and low power consumption.

25 ns

YES

NO

R-PBGA-B63

2147483648 bit

FLASH

8

2K

63

268435456 words

256M

85 Cel

-40 Cel

256MX8

PLASTIC/EPOXY

FBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

2K

PARALLEL

3/3.3

Not Qualified

YES

128K

.0001 Amp

Flash Memories

35 mA

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

MT29F2G08ABBEAH4-ITX:E by Micron Technology

MT29F2G08ABBEAH4-ITX:E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 63; Package Code: FBGA; Package Shape: RECTANGULAR; Terminal Form: BALL;

25 ns

YES

NO

R-PBGA-B63

2147483648 bit

FLASH

8

2K

63

268435456 words

256M

85 Cel

-40 Cel

256MX8

PLASTIC/EPOXY

FBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

2K

PARALLEL

1.8

Not Qualified

YES

128K

.00005 Amp

Flash Memories

20 mA

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

MT29F4G08ABADAH4-ITX:D by Micron Technology

MT29F4G08ABADAH4-ITX:D

Micron Technology

MT29F4G08ABADAH4-ITX:D by Micron Technology is a 512Mx8 SLC NAND flash memory with 4K sectors and 128K word sector size. Operating at -40 to 85°C, it has a peak reflow temp of 260°C and consumes max 35mA current. Ideal for industrial applications requiring fast access time of 25ns and high memory density of 4294967296 bits.

25 ns

YES

NO

R-PBGA-B63

e1

4294967296 bit

FLASH

8

4K

63

536870912 words

512M

85 Cel

-40 Cel

512MX8

PLASTIC/EPOXY

FBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

2K

PARALLEL

260

3/3.3

Not Qualified

YES

128K

.0001 Amp

Flash Memories

35 mA

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

NO

SLC NAND TYPE

MT29F8G16ADADAH4:D by Micron Technology

MT29F8G16ADADAH4:D

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: FBGA; Package Shape: RECTANGULAR; Minimum Operating Temperature: 0 Cel;

25 ns

YES

NO

R-PBGA-B63

8589934592 bit

FLASH

16

8K

63

536870912 words

512M

70 Cel

0 Cel

512MX16

PLASTIC/EPOXY

FBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

1K

PARALLEL

3/3.3

Not Qualified

YES

64K

.00005 Amp

Flash Memories

20 mA

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

MT29F2G08ABBFAH4:F by Micron Technology

MT29F2G08ABBFAH4:F

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: FBGA; Package Shape: RECTANGULAR; Toggle Bit: NO;

25 ns

YES

NO

R-PBGA-B63

2147483648 bit

FLASH

8

2K

63

268435456 words

256M

70 Cel

0 Cel

256MX8

PLASTIC/EPOXY

FBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

2K

PARALLEL

1.8

Not Qualified

YES

128K

.00005 Amp

Flash Memories

20 mA

1.8

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

NAND512R3A2SZA6E by Micron Technology

NAND512R3A2SZA6E

Micron Technology

Micron's NAND512R3A2SZA6E is a 64MX8 SLC NAND flash memory with 536Mbit density. Operating at 1.8V, it has a temperature range of -40 to 85°C and uses parallel interface with 0.8mm pitch for industrial applications.

R-PBGA-B63

e1

11 mm

536870912 bit

FLASH

8

1

63

67108864 words

64M

ASYNCHRONOUS

85 Cel

-40 Cel

64MX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

1.8

1.05 mm

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

SLC NAND TYPE

9 mm

MT29F2G08ABBEAH4:E by Micron Technology

MT29F2G08ABBEAH4:E

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Terminal Position: BOTTOM;

25 ns

YES

NO

R-PBGA-B63

11 mm

2147483648 bit

FLASH

8

1

2K

63

268435456 words

256M

ASYNCHRONOUS

70 Cel

0 Cel

256MX8

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

2K

PARALLEL

260

1.8

1.8

Not Qualified

YES

1 mm

128K

.00005 Amp

Flash Memories

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

30

NO

SLC NAND TYPE

9 mm

MT29F2G16ABBEAHC:E by Micron Technology

MT29F2G16ABBEAHC:E

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Memory Density: 2147483648 bit;

25 ns

YES

NO

R-PBGA-B63

13 mm

2147483648 bit

FLASH

16

1

2K

63

134217728 words

128M

ASYNCHRONOUS

70 Cel

0 Cel

128MX16

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1K

PARALLEL

260

1.8

1.8

Not Qualified

YES

1 mm

64K

.00005 Amp

Flash Memories

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

30

NO

SLC NAND TYPE

10.5 mm

MT29F4G08ABBDAHC:D by Micron Technology

MT29F4G08ABBDAHC:D

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Terminal Form: BALL;

25 ns

YES

NO

R-PBGA-B63

13 mm

4294967296 bit

FLASH

8

1

4K

63

536870912 words

512M

ASYNCHRONOUS

70 Cel

0 Cel

512MX8

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

2K

PARALLEL

260

1.8

Not Qualified

YES

1 mm

128K

.00005 Amp

Flash Memories

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

30

NO

SLC NAND TYPE

10.5 mm

MT29F4G16ABADAH4-IT:D by Micron Technology

MT29F4G16ABADAH4-IT:D

Micron Technology

MT29F4G16ABADAH4-IT:D by Micron Technology is a 256MX16 SLC NAND flash memory with 3.3V supply, 1K page size, and 64K sector size. It operates in industrial temperatures (-40 to 85 °C) and has a parallel interface. Ideal for applications requiring fast access times and high memory density.

25 ns

YES

NO

R-PBGA-B63

11 mm

4294967296 bit

FLASH

16

1

4K

63

268435456 words

256M

ASYNCHRONOUS

85 Cel

-40 Cel

256MX16

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1K

PARALLEL

260

3.3

Not Qualified

YES

1 mm

64K

.0001 Amp

Flash Memories

35 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

30

NO

SLC NAND TYPE

9 mm

MT29F4G16ABADAH4:D by Micron Technology

MT29F4G16ABADAH4:D

Micron Technology

Micron Technology's MT29F4G16ABADAH4:D is a 256MX16 SLC NAND flash memory with 3.3V supply, 1K page size, and 64K sector size. It operates in asynchronous mode with a max access time of 25ns. Ideal for commercial applications requiring fast data storage and retrieval in compact devices.

25 ns

YES

NO

R-PBGA-B63

11 mm

4294967296 bit

FLASH

16

1

4K

63

268435456 words

256M

ASYNCHRONOUS

70 Cel

0 Cel

256MX16

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1K

PARALLEL

260

3.3

Not Qualified

YES

1 mm

64K

.0001 Amp

Flash Memories

35 mA

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

30

NO

SLC NAND TYPE

9 mm

MT29F4G16ABBDAH4:D by Micron Technology

MT29F4G16ABBDAH4:D

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Memory Density: 4294967296 bit;

25 ns

YES

NO

R-PBGA-B63

e1

11 mm

4294967296 bit

FLASH

16

1

4K

63

268435456 words

256M

ASYNCHRONOUS

70 Cel

0 Cel

256MX16

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1K

PARALLEL

1.8

Not Qualified

YES

1 mm

64K

.00005 Amp

Flash Memories

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

9 mm

MT29F4G16ABBDAHC-IT:D by Micron Technology

MT29F4G16ABBDAHC-IT:D

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Maximum Access Time: 25 ns;

25 ns

YES

NO

R-PBGA-B63

13 mm

4294967296 bit

FLASH

16

1

4K

63

268435456 words

256M

ASYNCHRONOUS

85 Cel

-40 Cel

256MX16

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1K

PARALLEL

NOT SPECIFIED

1.8

Not Qualified

YES

1 mm

64K

.00005 Amp

Flash Memories

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NOT SPECIFIED

NO

SLC NAND TYPE

10.5 mm

MT29F4G16ABBDAHC:D by Micron Technology

MT29F4G16ABBDAHC:D

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Ready or Busy: YES;

25 ns

YES

NO

R-PBGA-B63

13 mm

4294967296 bit

FLASH

16

1

4K

63

268435456 words

256M

ASYNCHRONOUS

70 Cel

0 Cel

256MX16

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1K

PARALLEL

260

1.8

Not Qualified

YES

1 mm

64K

.00005 Amp

Flash Memories

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

30

NO

SLC NAND TYPE

10.5 mm

MT29F8G08ADBDAH4-IT:D by Micron Technology

MT29F8G08ADBDAH4-IT:D

Micron Technology

MT29F8G08ADBDAH4-IT:D by Micron Technology is a 1.8V SLC NAND flash memory with 1GX8 organization, operating in industrial temperature range. Featuring 2K word page size and 128K word sector size, it offers fast access time of 25ns for applications requiring high-speed data storage and retrieval. With a low standby current of 0.00005A, it is suitable for power-sensitive devices.

25 ns

YES

NO

R-PBGA-B63

e1

11 mm

8589934592 bit

FLASH

8

1

8K

63

1073741824 words

1G

ASYNCHRONOUS

85 Cel

-40 Cel

1GX8

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

2K

PARALLEL

1.8

Not Qualified

YES

1 mm

128K

.00005 Amp

Flash Memories

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

9 mm

MT29F8G08ADBDAH4:D by Micron Technology

MT29F8G08ADBDAH4:D

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Minimum Operating Temperature: 0 Cel;

25 ns

YES

NO

R-PBGA-B63

11 mm

8589934592 bit

FLASH

8

1

8K

63

1073741824 words

1G

ASYNCHRONOUS

70 Cel

0 Cel

1GX8

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

2K

PARALLEL

260

1.8

Not Qualified

YES

1 mm

128K

.00005 Amp

Flash Memories

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

30

NO

SLC NAND TYPE

9 mm

MT29F8G16ADADAH4-IT:D by Micron Technology

MT29F8G16ADADAH4-IT:D

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Programming Voltage (V): 3.3;

25 ns

YES

NO

R-PBGA-B63

11 mm

8589934592 bit

FLASH

16

1

8K

63

536870912 words

512M

ASYNCHRONOUS

85 Cel

-40 Cel

512MX16

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1K

PARALLEL

260

3.3

3.3

Not Qualified

YES

1 mm

64K

.0001 Amp

Flash Memories

35 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

30

NO

SLC NAND TYPE

9 mm

MT29F8G16ADBDAH4-IT:D by Micron Technology

MT29F8G16ADBDAH4-IT:D

Micron Technology

MT29F8G16ADBDAH4-IT:D by Micron is a 512MX16 SLC NAND flash memory with 1.8V supply, 85°C max temp, and 25ns access time. Ideal for industrial applications requiring fast, reliable data storage in a compact GRID ARRAY package.

25 ns

YES

NO

R-PBGA-B63

11 mm

8589934592 bit

FLASH

16

1

8K

63

536870912 words

512M

ASYNCHRONOUS

85 Cel

-40 Cel

512MX16

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1K

PARALLEL

260

1.8

Not Qualified

YES

1 mm

64K

.00005 Amp

Flash Memories

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

30

NO

SLC NAND TYPE

9 mm

MT29F1G08ABBDAH4-IT:DTR by Micron Technology

MT29F1G08ABBDAH4-IT:DTR

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Operating Mode: ASYNCHRONOUS;

25 ns

R-PBGA-B63

e1

11 mm

1073741824 bit

FLASH

8

1

63

134217728 words

128M

ASYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

1.8

1 mm

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

SLC NAND TYPE

9 mm

MT29F2G08ABBFAH4-IT:F by Micron Technology

MT29F2G08ABBFAH4-IT:F

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; JESD-609 Code: e1;

R-PBGA-B63

e1

11 mm

2147483648 bit

FLASH

8

1

63

268435456 words

256M

ASYNCHRONOUS

85 Cel

-40 Cel

256MX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

1.8

1 mm

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

SLC NAND TYPE

9 mm

MT29F2G08ABBEAHC:ETR by Micron Technology

MT29F2G08ABBEAHC:ETR

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Terminal Form: BALL;

R-PBGA-B63

e1

13 mm

2147483648 bit

FLASH

8

1

63

268435456 words

256M

ASYNCHRONOUS

70 Cel

0 Cel

256MX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

1.8

1 mm

1.95 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

SLC NAND TYPE

10.5 mm

MT29F1G08ABCHC:C by Micron Technology

MT29F1G08ABCHC:C

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 1.65 V;

R-PBGA-B63

e1

13 mm

1073741824 bit

FLASH

8

1

63

134217728 words

128M

ASYNCHRONOUS

70 Cel

0 Cel

128MX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

1.8

1 mm

1.95 V

1.65 V

1.8

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

SLC NAND TYPE

10.5 mm

MT29F1G08ABCHCET:C by Micron Technology

MT29F1G08ABCHCET:C

Micron Technology

Micron Technology's MT29F1G08ABCHCET:C is a 128MX8 SLC NAND flash memory with 1073741824 bit density. Operating at 1.8V, it offers industrial-grade temperature range of -40 to 85 °C. With parallel interface and very thin profile, it suits applications requiring high-speed data storage in compact devices.

R-PBGA-B63

e1

13 mm

1073741824 bit

FLASH

8

1

63

134217728 words

128M

ASYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

1.8

1 mm

1.95 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

SLC NAND TYPE

10.5 mm

MT29F1G16ABCHC:C by Micron Technology

MT29F1G16ABCHC:C

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 1.8;

R-PBGA-B63

e1

13 mm

1073741824 bit

FLASH

16

1

63

67108864 words

64M

ASYNCHRONOUS

70 Cel

0 Cel

64MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

1.8

1 mm

1.95 V

1.65 V

1.8

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

SLC NAND TYPE

10.5 mm

MT29F1G16ABCHCET:C by Micron Technology

MT29F1G16ABCHCET:C

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Type: SLC NAND TYPE;

R-PBGA-B63

e1

13 mm

1073741824 bit

FLASH

16

1

63

67108864 words

64M

ASYNCHRONOUS

85 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

1.8

1 mm

1.95 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

SLC NAND TYPE

10.5 mm

MT29F1G08ABBDAH4-IT:D by Micron Technology

MT29F1G08ABBDAH4-IT:D

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Power Supplies (V): 1.8;

25 ns

YES

NO

R-PBGA-B63

e1

11 mm

1073741824 bit

FLASH

8

1

1K

63

134217728 words

128M

ASYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

2K

PARALLEL

1.8

1.8

Not Qualified

YES

1 mm

128K

.00005 Amp

Flash Memories

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

9 mm

MT29F16G08ADACAH4-IT:C by Micron Technology

MT29F16G08ADACAH4-IT:C

Micron Technology

MT29F16G08ADACAH4-IT:C by Micron Technology is a 3.3V SLC NAND flash memory with 2GX8 organization, 4K page size, and 256K sector size. It operates in industrial temperature range (-40 to 85 °C) and has a parallel interface. Ideal for applications requiring fast access times and high memory density.

25 ns

YES

NO

R-PBGA-B63

11 mm

17179869184 bit

FLASH

8

1

8K

63

2147483648 words

2G

ASYNCHRONOUS

85 Cel

-40 Cel

2GX8

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

4K

PARALLEL

NOT SPECIFIED

3/3.3

2.7

Not Qualified

YES

1 mm

256K

.0001 Amp

Flash Memories

35 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NOT SPECIFIED

NO

SLC NAND TYPE

9 mm

MT29F2G16ABBEAH4:E by Micron Technology

MT29F2G16ABBEAH4:E

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Technology: CMOS;

25 ns

YES

NO

R-PBGA-B63

e1

11 mm

2147483648 bit

FLASH

16

1

2K

63

134217728 words

128M

ASYNCHRONOUS

70 Cel

0 Cel

128MX16

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1K

PARALLEL

260

1.8

1.8

Not Qualified

YES

1 mm

64K

.00005 Amp

Flash Memories

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

NO

SLC NAND TYPE

9 mm

MT29F2G16ABBEAH4:ETR by Micron Technology

MT29F2G16ABBEAH4:ETR

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Maximum Supply Current: 20 mA;

25 ns

YES

NO

R-PBGA-B63

e1

11 mm

2147483648 bit

FLASH

16

1

2K

63

134217728 words

128M

ASYNCHRONOUS

70 Cel

0 Cel

128MX16

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1K

PARALLEL

260

1.8

1.8

Not Qualified

YES

1 mm

64K

.00005 Amp

Flash Memories

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

NO

SLC NAND TYPE

9 mm

MT29F1G08ABBDAH4-ITX:D by Micron Technology

MT29F1G08ABBDAH4-ITX:D

Micron Technology

Micron Technology's MT29F1G08ABBDAH4-ITX:D is a 128MX8 SLC NAND flash memory with 1.8V programming voltage, 1K sectors, and 100000 write/erase cycles. It operates in industrial temperature grades, has a package style of GRID ARRAY, and is suitable for applications requiring high endurance and reliability.

YES

NO

10

100000 Write/Erase Cycles

R-PBGA-B63

e1

11 mm

1073741824 bit

FLASH

8

1

1K

63

134217728 words

128M

ASYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

2K

PARALLEL

260

1.8

YES

1 mm

128K

.00005 Amp

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

NO

SLC NAND TYPE

9 mm

HARDWARE

MX30LF2G18AC-XKI by Macronix

MX30LF2G18AC-XKI

Macronix

Macronix's MX30LF2G18AC-XKI is a 256MX8 SLC NAND flash memory with 2147483648-bit density. Operating at 3V, it has an industrial temperature grade of -40 to 85°C. With a very thin profile and fine pitch grid array package, it is suitable for high-performance applications requiring reliable non-volatile memory storage.

R-PBGA-B63

11 mm

2147483648 bit

FLASH

8

1

63

268435456 words

256M

ASYNCHRONOUS

85 Cel

-40 Cel

256MX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

3

1 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NOT SPECIFIED

SLC NAND TYPE

9 mm

MT29F1G01AAADDH4-IT:D by Micron Technology

MT29F1G01AAADDH4-IT:D

Micron Technology

Micron Technology's MT29F1G01AAADDH4-IT:D is a 1GX1 SLC NAND Flash Memory with 1073741824 bit memory density. It operates at 3.3V, has a clock frequency of 50 MHz, and supports serial communication. This industrial-grade memory chip is ideal for applications requiring high-speed data storage in compact devices.

50 MHz

R-PBGA-B63

e1

11 mm

1073741824 bit

FLASH

1

1

63

1073741824 words

1G

SYNCHRONOUS

85 Cel

-40 Cel

1GX1

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

SERIAL

260

2.7

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

SLC NAND TYPE

9 mm

MT29F8G16ABBCAH4:C by Micron Technology

MT29F8G16ABBCAH4:C

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: FBGA; Package Shape: RECTANGULAR; Maximum Supply Current: 20 mA;

30 ns

YES

NO

R-PBGA-B63

8589934592 bit

FLASH

16

4K

63

536870912 words

512M

70 Cel

0 Cel

512MX16

PLASTIC/EPOXY

FBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

2K

PARALLEL

1.8

1.8

Not Qualified

YES

128K

.00005 Amp

Flash Memories

20 mA

1.8

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

MT29F16G08ADBCAH4:C by Micron Technology

MT29F16G08ADBCAH4:C

Micron Technology

MT29F16G08ADBCAH4:C by Micron Technology is a 1.8V SLC NAND flash memory with 2GX8 organization, 4K page size, and 256K sector size. It operates b/w 0-70°C, has a max standby current of 0.00005A, and is suitable for commercial applications requiring fast access times and low power consumption.

30 ns

YES

NO

R-PBGA-B63

17179869184 bit

FLASH

8

8K

63

2147483648 words

2G

70 Cel

0 Cel

2GX8

PLASTIC/EPOXY

FBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

4K

PARALLEL

1.8

1.8

Not Qualified

YES

256K

.00005 Amp

Flash Memories

20 mA

1.8

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

MT29F8G08ABACAH4:C by Micron Technology

MT29F8G08ABACAH4:C

Micron Technology

Micron Technology's MT29F8G08ABACAH4:C is a 3.3V SLC NAND flash memory with 1GX8 organization, 4K page size, and 256K sector size. It operates in asynchronous mode with a max temperature of 70°C. Ideal for applications requiring high-speed data storage and retrieval in commercial-grade environments.

YES

NO

R-PBGA-B63

11 mm

8589934592 bit

FLASH

8

1

4K

63

1073741824 words

1G

ASYNCHRONOUS

70 Cel

0 Cel

1GX8

PLASTIC/EPOXY

TFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

4K

PARALLEL

3/3.3

Not Qualified

YES

1 mm

256K

.0001 Amp

Flash Memories

35 mA

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

9 mm

MT29F16G16ADBCAH4:C by Micron Technology

MT29F16G16ADBCAH4:C

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: FBGA; Package Shape: RECTANGULAR; Ready or Busy: YES;

30 ns

YES

NO

R-PBGA-B63

17179869184 bit

FLASH

16

8K

63

1073741824 words

1G

70 Cel

0 Cel

1GX16

PLASTIC/EPOXY

FBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

2K

PARALLEL

1.8

1.8

Not Qualified

YES

128K

.00005 Amp

Flash Memories

20 mA

1.8

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

MT29F16G08ADBCAH4-IT:C by Micron Technology

MT29F16G08ADBCAH4-IT:C

Micron Technology

MT29F16G08ADBCAH4-IT:C by Micron Technology is a Flash Memory with 2GX8 organization, 8K sectors, and 4K page size. It is used in industrial applications with a temperature range of -40 to 85 °C.

30 ns

YES

NO

R-PBGA-B63

17179869184 bit

FLASH

8

8K

63

2147483648 words

2G

85 Cel

-40 Cel

2GX8

PLASTIC/EPOXY

FBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

4K

PARALLEL

1.8

1.8

Not Qualified

YES

256K

.00005 Amp

Flash Memories

20 mA

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

MT29F16G08ADACAH4:C by Micron Technology

MT29F16G08ADACAH4:C

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: FBGA; Package Shape: RECTANGULAR; Command User Interface: YES;

25 ns

YES

NO

R-PBGA-B63

17179869184 bit

FLASH

8

8K

63

2147483648 words

2G

70 Cel

0 Cel

2GX8

PLASTIC/EPOXY

FBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

4K

PARALLEL

3/3.3

3.3

Not Qualified

YES

256K

.0001 Amp

Flash Memories

35 mA

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

MT29F8G16ABACAH4-IT:C by Micron Technology

MT29F8G16ABACAH4-IT:C

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 63; Package Code: FBGA; Package Shape: RECTANGULAR; Terminal Pitch: .8 mm;

25 ns

YES

NO

R-PBGA-B63

8589934592 bit

FLASH

16

4K

63

536870912 words

512M

85 Cel

-40 Cel

512MX16

PLASTIC/EPOXY

FBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

2K

PARALLEL

3/3.3

3.3

Not Qualified

YES

128K

.0001 Amp

Flash Memories

35 mA

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

MT29F8G16ABBCAH4-IT:C by Micron Technology

MT29F8G16ABBCAH4-IT:C

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 63; Package Code: FBGA; Package Shape: RECTANGULAR; Type: SLC NAND TYPE;

30 ns

YES

NO

R-PBGA-B63

8589934592 bit

FLASH

16

4K

63

536870912 words

512M

85 Cel

-40 Cel

512MX16

PLASTIC/EPOXY

FBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

2K

PARALLEL

1.8

1.8

Not Qualified

YES

128K

.00005 Amp

Flash Memories

20 mA

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

MT29F16G16ADACAH4-IT:C by Micron Technology

MT29F16G16ADACAH4-IT:C

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 63; Package Code: FBGA; Package Shape: RECTANGULAR; No. of Words Code: 1G;

25 ns

YES

NO

R-PBGA-B63

17179869184 bit

FLASH

16

8K

63

1073741824 words

1G

85 Cel

-40 Cel

1GX16

PLASTIC/EPOXY

FBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

2K

PARALLEL

3/3.3

3.3

Not Qualified

YES

128K

.0001 Amp

Flash Memories

35 mA

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

MT29F16G16ADACAH4:C by Micron Technology

MT29F16G16ADACAH4:C

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: FBGA; Package Shape: RECTANGULAR; Package Equivalence Code: BGA63,10X12,32;

25 ns

YES

NO

R-PBGA-B63

17179869184 bit

FLASH

16

8K

63

1073741824 words

1G

70 Cel

0 Cel

1GX16

PLASTIC/EPOXY

FBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

2K

PARALLEL

3/3.3

3.3

Not Qualified

YES

128K

.0001 Amp

Flash Memories

35 mA

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

MT29F8G08ABBCAH4:C by Micron Technology

MT29F8G08ABBCAH4:C

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: FBGA; Package Shape: RECTANGULAR; Maximum Access Time: 30 ns;

30 ns

YES

NO

R-PBGA-B63

8589934592 bit

FLASH

8

4K

63

1073741824 words

1G

70 Cel

0 Cel

1GX8

PLASTIC/EPOXY

FBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

4K

PARALLEL

1.8

1.8

Not Qualified

YES

256K

.00005 Amp

Flash Memories

20 mA

1.8

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

MT29F8G16ABACAH4:C by Micron Technology

MT29F8G16ABACAH4:C

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: FBGA; Package Shape: RECTANGULAR; No. of Words: 536870912 words;

25 ns

YES

NO

R-PBGA-B63

8589934592 bit

FLASH

16

4K

63

536870912 words

512M

70 Cel

0 Cel

512MX16

PLASTIC/EPOXY

FBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

2K

PARALLEL

3/3.3

3.3

Not Qualified

YES

128K

.0001 Amp

Flash Memories

35 mA

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE