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100 Flash Memory 122

Flash Memory
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Boot Block Maximum Clock Frequency (fCLK) Command User Interface Common Flash Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Type Width Maximum Write Cycle Time (tWC) Write Protection
MT29F64G08AKCBBH2-12IT:B by Micron Technology

MT29F64G08AKCBBH2-12IT:B

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 100; Package Code: TBGA; Package Shape: RECTANGULAR; Parallel or Serial: PARALLEL;

R-PBGA-B100

e1

18 mm

68719476736 bit

FLASH

8

1

100

8589934592 words

8G

SYNCHRONOUS

85 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

SLC NAND TYPE

12 mm

MT29F64G08AMCBBH2-12:B by Micron Technology

MT29F64G08AMCBBH2-12:B

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 100; Package Code: TBGA; Package Shape: RECTANGULAR; No. of Words: 8589934592 words;

R-PBGA-B100

e1

18 mm

68719476736 bit

FLASH

8

1

100

8589934592 words

8G

SYNCHRONOUS

70 Cel

0 Cel

8GX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

SLC NAND TYPE

12 mm

MT29F64G08AMCBBH2-12IT:B by Micron Technology

MT29F64G08AMCBBH2-12IT:B

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 100; Package Code: TBGA; Package Shape: RECTANGULAR; Organization: 8GX8;

R-PBGA-B100

e1

18 mm

68719476736 bit

FLASH

8

1

100

8589934592 words

8G

SYNCHRONOUS

85 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

SLC NAND TYPE

12 mm

MTFC32GJDDQ-4MIT by Micron Technology

MTFC32GJDDQ-4MIT

Micron Technology

Micron Technology's MTFC32GJDDQ-4MIT is a 32GB MLC NAND flash memory with 100 terminals in a low-profile grid array package. Operating at 3.3V, it is ideal for industrial applications requiring high-density storage in compact spaces. With CMOS technology and ball terminal form, it offers reliable performance for various flash card solutions.

R-PBGA-B100

e1

18 mm

FLASH CARD

1

100

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

3.3

1.4 mm

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

MLC NAND TYPE

14 mm

MTFC128GAPALNA-AAT by Micron Technology

MTFC128GAPALNA-AAT

Micron Technology

MTFC128GAPALNA-AAT by Micron Technology is a flash memory with 128GX8 organization and 1099511627776 bit memory density. It operates in synchronous mode, has a temperature grade of INDUSTRIAL, and is suitable for use in various applications such as storage devices and embedded systems.

R-PBGA-B100

e1

18 mm

1099511627776 bit

FLASH CARD

8

1

100

137438953472 words

128G

SYNCHRONOUS

105 Cel

-40 Cel

128GX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

14 mm

MTFC128GAPALNA-AIT by Micron Technology

MTFC128GAPALNA-AIT

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 100; Package Code: TBGA; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 2.7 V;

R-PBGA-B100

e1

18 mm

1099511627776 bit

FLASH CARD

8

1

100

137438953472 words

128G

SYNCHRONOUS

85 Cel

-40 Cel

128GX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

14 mm

MTFC16GAPALNA-AAT by Micron Technology

MTFC16GAPALNA-AAT

Micron Technology

MTFC16GAPALNA-AAT by Micron Technology is a 16GX8 flash memory with 137.4Gb density and operates in industrial temperature range. It features synchronous operation, parallel interface, and thin profile grid array package suitable for various applications requiring high-speed data storage.

R-PBGA-B100

e1

18 mm

137438953472 bit

FLASH CARD

8

1

100

17179869184 words

16G

SYNCHRONOUS

105 Cel

-40 Cel

16GX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

14 mm

MTFC16GAPALNA-AIT by Micron Technology

MTFC16GAPALNA-AIT

Micron Technology

Micron Technology's MTFC16GAPALNA-AIT is a 16GX8 flash memory with 137.4Gb density, operating in industrial temperature range (-40 to 85°C). It features synchronous operation, parallel interface, and thin profile grid array package. Ideal for applications requiring high-speed data storage in harsh environments.

R-PBGA-B100

e1

18 mm

137438953472 bit

FLASH CARD

8

1

100

17179869184 words

16G

SYNCHRONOUS

85 Cel

-40 Cel

16GX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

14 mm

MTFC32GAPALNA-AAT by Micron Technology

MTFC32GAPALNA-AAT

Micron Technology

MTFC32GAPALNA-AAT by Micron Technology is a 32GX8 NAND flash memory with 34359738368 words capacity. It operates synchronously at up to 200 MHz clock frequency, suitable for industrial applications. With a thin profile and grid array package style, it offers hardware write protection and a wide temperature range from -40 to 105 °C.

200 MHz

NO

NO

R-PBGA-B100

e1

18 mm

274877906944 bit

FLASH CARD

8

1

100

34359738368 words

32G

SYNCHRONOUS

105 Cel

-40 Cel

32GX8

PLASTIC/EPOXY

TBGA

BGA100,10X15,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

2.7

YES

1.2 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NO

NAND TYPE

14 mm

HARDWARE

MTFC32GAPALNA-AIT by Micron Technology

MTFC32GAPALNA-AIT

Micron Technology

Micron Technology's MTFC32GAPALNA-AIT is a 32GX8 NAND flash memory with 34359738368 words capacity. Operating at up to 200 MHz, it has a thin profile grid array package suitable for industrial applications. With hardware write protection and parallel interface, it offers reliable data storage in temperatures ranging from -40°C to 85°C.

200 MHz

NO

NO

R-PBGA-B100

e1

18 mm

274877906944 bit

FLASH CARD

8

1

100

34359738368 words

32G

SYNCHRONOUS

85 Cel

-40 Cel

32GX8

PLASTIC/EPOXY

TBGA

BGA100,10X15,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

2.7

YES

1.2 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NO

NAND TYPE

14 mm

HARDWARE

MTFC64GAPALNA-AAT by Micron Technology

MTFC64GAPALNA-AAT

Micron Technology

MTFC64GAPALNA-AAT by Micron Technology is a 64GX8 flash memory with 549755813888 bit density. Operating in synchronous mode, it has a temperature range of -40 to 105 °C and supports parallel programming at 2.7V. Ideal for industrial applications requiring high-speed data storage in a compact GRID ARRAY package.

R-PBGA-B100

e1

18 mm

549755813888 bit

FLASH CARD

8

1

100

68719476736 words

64G

SYNCHRONOUS

105 Cel

-40 Cel

64GX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

14 mm

MTFC64GAPALNA-AIT by Micron Technology

MTFC64GAPALNA-AIT

Micron Technology

Micron Technology's MTFC64GAPALNA-AIT is a 64GX8 NAND flash memory with 549755813888 bit density. Operating at up to 200 MHz, it features hardware write protection and industrial temperature grade. Ideal for applications requiring high-speed data storage in compact devices.

200 MHz

NO

NO

R-PBGA-B100

e1

18 mm

549755813888 bit

FLASH CARD

8

1

100

68719476736 words

64G

SYNCHRONOUS

85 Cel

-40 Cel

64GX8

PLASTIC/EPOXY

TBGA

BGA100,10X15,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

2.7

YES

1.2 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NO

NAND TYPE

14 mm

HARDWARE

MTFC8GAMALNA-AIT by Micron Technology

MTFC8GAMALNA-AIT

Micron Technology

MTFC8GAMALNA-AIT by Micron Technology is a 8GX8 Flash Memory with 68719476736 bit memory density. Operating in synchronous mode, it has a temperature range of -40 to 85 °C and supports parallel programming. Ideal for industrial applications requiring high-speed data storage in a compact form factor.

R-PBGA-B100

e1

18 mm

68719476736 bit

FLASH CARD

8

1

100

8589934592 words

8G

SYNCHRONOUS

85 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

14 mm

MTFC16GLWDQ-4MAITZ by Micron Technology

MTFC16GLWDQ-4MAITZ

Micron Technology

Micron Technology's MTFC16GLWDQ-4MAITZ is a 16GX8 NAND flash memory with 137.4 Gb density, operating at up to 52 MHz clock frequency. Ideal for industrial applications, it features a low profile grid array package and operates in synchronous mode.

52 MHz

R-PBGA-B100

18 mm

137438953472 bit

FLASH CARD

8

1

100

17179869184 words

16G

SYNCHRONOUS

85 Cel

-40 Cel

16GX8

PLASTIC/EPOXY

LBGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

NOT SPECIFIED

1.703 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

NAND TYPE

14 mm

MTFC32GJWDQ-4MAITZ by Micron Technology

MTFC32GJWDQ-4MAITZ

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 100; Package Code: LBGA; Package Shape: RECTANGULAR; Length: 18 mm;

52 MHz

R-PBGA-B100

18 mm

274877906944 bit

FLASH CARD

8

1

100

34359738368 words

32G

SYNCHRONOUS

85 Cel

-40 Cel

32GX8

PLASTIC/EPOXY

LBGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

NOT SPECIFIED

1.703 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

NAND TYPE

14 mm

MTFC4GMWDQ-3MAITA by Micron Technology

MTFC4GMWDQ-3MAITA

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 100; Package Code: LBGA; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 2.7 V;

52 MHz

R-PBGA-B100

18 mm

34359738368 bit

FLASH CARD

8

1

100

4294967296 words

4G

SYNCHRONOUS

85 Cel

-40 Cel

4GX8

PLASTIC/EPOXY

LBGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.703 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NAND TYPE

14 mm

MTFC8GLWDQ-3MAITA by Micron Technology

MTFC8GLWDQ-3MAITA

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 100; Package Code: LBGA; Package Shape: RECTANGULAR; Package Equivalence Code: BGA100,10X17,40;

52 MHz

R-PBGA-B100

18 mm

68719476736 bit

FLASH CARD

8

1

100

8589934592 words

8G

SYNCHRONOUS

85 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

LBGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.703 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NAND TYPE

14 mm

MTFC8GLWDQ-3MAITZ by Micron Technology

MTFC8GLWDQ-3MAITZ

Micron Technology

MTFC8GLWDQ-3MAITZ by Micron Technology is a NAND flash memory with 8GX8 organization, 52 MHz clock frequency, and 85°C max operating temp. Ideal for industrial applications requiring high-density storage in a compact form factor.

52 MHz

R-PBGA-B100

18 mm

68719476736 bit

FLASH CARD

8

1

100

8589934592 words

8G

SYNCHRONOUS

85 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

LBGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

NOT SPECIFIED

1.703 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

NAND TYPE

14 mm

MTFC32GJWDQ-4LAITZ by Micron Technology

MTFC32GJWDQ-4LAITZ

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 100; Package Code: LBGA; Package Shape: RECTANGULAR; Maximum Clock Frequency (fCLK): 52 MHz;

52 MHz

R-PBGA-B100

18 mm

274877906944 bit

FLASH CARD

8

1

100

34359738368 words

32G

SYNCHRONOUS

85 Cel

-40 Cel

32GX8

PLASTIC/EPOXY

LBGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.4 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NAND TYPE

14 mm

MTFC4GLMDQ-AITA by Micron Technology

MTFC4GLMDQ-AITA

Micron Technology

MTFC4GLMDQ-AITA by Micron Technology is a 100-terminal flash memory with 4GX8 organization, operating at up to 52 MHz clock frequency. It features MLC NAND technology, industrial temperature grade, and parallel interface. Ideal for applications requiring high-speed data storage in compact devices.

52 MHz

R-PBGA-B100

18 mm

34359738368 bit

FLASH CARD

8

1

100

4294967296 words

4G

SYNCHRONOUS

85 Cel

-40 Cel

4GX8

PLASTIC/EPOXY

LBGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

NOT SPECIFIED

1.703 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

MLC NAND TYPE

14 mm

MTFC8GLWDQ-3LAATA by Micron Technology

MTFC8GLWDQ-3LAATA

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 100; Package Code: LBGA; Package Shape: RECTANGULAR; Maximum Seated Height: 1.703 mm;

52 MHz

R-PBGA-B100

18 mm

68719476736 bit

FLASH CARD

8

1

100

8589934592 words

8G

SYNCHRONOUS

105 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

LBGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.703 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NAND TYPE

14 mm

MTFC8GLWDQ-3LAITA by Micron Technology

MTFC8GLWDQ-3LAITA

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 100; Package Code: LBGA; Package Shape: RECTANGULAR; Maximum Operating Temperature: 85 Cel;

52 MHz

R-PBGA-B100

18 mm

68719476736 bit

FLASH CARD

8

1

100

8589934592 words

8G

SYNCHRONOUS

85 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

LBGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.4 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NAND TYPE

14 mm

MTFC4GLGDQ-AITATR by Micron Technology

MTFC4GLGDQ-AITATR

Micron Technology

Micron Technology's MTFC4GLGDQ-AITATR is a 4GX8 MLC NAND flash memory with 34359738368-bit density. Operating at 52 MHz, it has a low profile grid array package suitable for synchronous applications. With a wide temperature range (-40 to 85 °C), it offers high-speed parallel data transfer in various electronic devices.

52 MHz

NO

NO

R-PBGA-B100

e1

18 mm

34359738368 bit

FLASH

8

1

100

4294967296 words

4G

SYNCHRONOUS

85 Cel

-40 Cel

4GX8

PLASTIC/EPOXY

LBGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

260

1.4 mm

3.6 V

2.7 V

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NO

MLC NAND TYPE

14 mm

MTFC4GLMDQ-AITATR by Micron Technology

MTFC4GLMDQ-AITATR

Micron Technology

FLASH CARD; No. of Terminals: 100; Package Code: LBGA; Package Shape: RECTANGULAR; JESD-30 Code: R-PBGA-B100; Memory Density: 34359738368 bit;

52 MHz

R-PBGA-B100

18 mm

34359738368 bit

FLASH CARD

8

1

100

4294967296 words

4G

SYNCHRONOUS

85 Cel

-40 Cel

4GX8

OPEN-DRAIN

PLASTIC/EPOXY

LBGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

NOT SPECIFIED

2.7

1.4 mm

3.6 V

2.7 V

YES

CMOS

BALL

1 mm

BOTTOM

NOT SPECIFIED

MLC NAND TYPE

14 mm

MTFC8GACAALT-4MITTR by Micron Technology

MTFC8GACAALT-4MITTR

Micron Technology

Micron Technology's MTFC8GACAALT-4MITTR is a 3.3V, 8GX8 MLC NAND flash memory with 52MHz clock frequency. Operating in synchronous mode, it offers 68719476736-bit memory density for applications requiring high-speed data storage and retrieval in compact devices. With a thin profile and grid array package style, it is suitable for space-constrained designs needing reliable non-volatile memory solutions.

52 MHz

NO

NO

R-PBGA-B100

e1

18 mm

68719476736 bit

FLASH

8

1

100

8589934592 words

8G

SYNCHRONOUS

85 Cel

-40 Cel

8GX8

OPEN-DRAIN

PLASTIC/EPOXY

TBGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

3.3

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

MLC NAND TYPE

14 mm

MTFC16GAKAEDQ-AAT by Micron Technology

MTFC16GAKAEDQ-AAT

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 100; Package Code: LBGA; Package Shape: RECTANGULAR; Data Polling: NO;

52 MHz

NO

NO

R-PBGA-B100

e4

18 mm

137438953472 bit

FLASH CARD

8

1

100

17179869184 words

16G

SYNCHRONOUS

105 Cel

-40 Cel

16GX8

PLASTIC/EPOXY

LBGA

BGA100,10X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

260

2.7

YES

1.4 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

Gold (Au) - with Nickel (Ni) barrier

BALL

1 mm

BOTTOM

30

NO

NAND TYPE

14 mm

MTFC64GAJAEDQ-AIT by Micron Technology

MTFC64GAJAEDQ-AIT

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 100; Package Code: LBGA; Package Shape: RECTANGULAR; Parallel or Serial: PARALLEL;

52 MHz

NO

NO

R-PBGA-B100

18 mm

549755813888 bit

FLASH CARD

8

1

100

68719476736 words

64G

SYNCHRONOUS

85 Cel

-40 Cel

64GX8

PLASTIC/EPOXY

LBGA

BGA100,10X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

NOT SPECIFIED

2.7

YES

1.4 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

NO

NAND TYPE

14 mm

MTFC4GLGDQ-AITZ by Micron Technology

MTFC4GLGDQ-AITZ

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 100; Package Code: LBGA; Package Shape: RECTANGULAR; Alternate Memory Width: 4;

4

R-PBGA-B100

e1

18 mm

34359738368 bit

FLASH CARD

8

1

100

4294967296 words

4G

SYNCHRONOUS

85 Cel

-40 Cel

4GX8

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

2.7

1.4 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

14 mm

MT29F16G08ABCBBH1-12AIT:B by Micron Technology

MT29F16G08ABCBBH1-12AIT:B

Micron Technology

Micron Technology's MT29F16G08ABCBBH1-12AIT:B is a 2GX8 SLC NAND flash memory with 4K page size and 512K sector size. Operating at 3.3V, it offers industrial-grade endurance of 100k cycles. Suitable for applications requiring high-density, reliable storage solutions in industrial environments.

83MHZ CLOCK FREQUENCY IS AVAILABLE

YES

NO

10

100000 Write/Erase Cycles

R-PBGA-B100

18 mm

17179869184 bit

FLASH

8

1

4K

100

2147483648 words

2G

ASYNCHRONOUS/SYNCHRONOUS

85 Cel

-40 Cel

2GX8

PLASTIC/EPOXY

VBGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

4K

PARALLEL

NOT SPECIFIED

3.3

YES

1 mm

512K

.00005 Amp

50 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

YES

SLC NAND TYPE

12 mm

MTFC8GLWDQ-3LAATZ by Micron Technology

MTFC8GLWDQ-3LAATZ

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 100; Package Code: LBGA; Package Shape: RECTANGULAR; No. of Functions: 1;

52 MHz

R-PBGA-B100

18 mm

68719476736 bit

FLASH CARD

8

1

100

8589934592 words

8G

SYNCHRONOUS

105 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

LBGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.703 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NAND TYPE

14 mm

MTFC4GACAALT-4MIT by Micron Technology

MTFC4GACAALT-4MIT

Micron Technology

MTFC4GACAALT-4MIT by Micron Technology is a 3.3V MLC NAND flash memory with 4294967296 words, operating at 52 MHz clock frequency. It features a thin profile grid array package and is suitable for applications requiring high-speed data storage in devices like smartphones and tablets.

52 MHz

NO

NO

R-PBGA-B100

e1

18 mm

34359738368 bit

FLASH

8

1

100

4294967296 words

4G

SYNCHRONOUS

85 Cel

-40 Cel

4GX8

OPEN-DRAIN

PLASTIC/EPOXY

TBGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

3.3

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

MLC NAND TYPE

14 mm

MTFC8GACAALT-4MIT by Micron Technology

MTFC8GACAALT-4MIT

Micron Technology

MTFC8GACAALT-4MIT by Micron Technology is a 100-terminal, 3.3V flash memory with 8GX8 organization and 52 MHz clock frequency. It operates in synchronous mode, suitable for applications requiring high-speed data storage and retrieval in a compact GRID ARRAY package.

52 MHz

NO

NO

R-PBGA-B100

e1

18 mm

68719476736 bit

FLASH

8

1

100

8589934592 words

8G

SYNCHRONOUS

85 Cel

-40 Cel

8GX8

OPEN-DRAIN

PLASTIC/EPOXY

TBGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

3.3

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

MLC NAND TYPE

14 mm

MT29F32G08AECCBH1-10:C by Micron Technology

MT29F32G08AECCBH1-10:C

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 100; Package Code: VBGA; Package Shape: RECTANGULAR; Maximum Seated Height: 1 mm;

20 ns

YES

NO

R-PBGA-B100

18 mm

34359738368 bit

FLASH

8

1

8K

100

4294967296 words

4G

SYNCHRONOUS

70 Cel

0 Cel

4GX8

PLASTIC/EPOXY

VBGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

4K

PARALLEL

3/3.3

2.7

Not Qualified

YES

1 mm

512K

Flash Memories

50 mA

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

BALL

1 mm

BOTTOM

NO

SLC NAND TYPE

12 mm

MT29F32G08AECCBH1-10Z:C by Micron Technology

MT29F32G08AECCBH1-10Z:C

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 100; Package Code: VBGA; Package Shape: RECTANGULAR; JESD-30 Code: R-PBGA-B100;

20 ns

YES

NO

R-PBGA-B100

18 mm

34359738368 bit

FLASH

8

1

8K

100

4294967296 words

4G

SYNCHRONOUS

70 Cel

0 Cel

4GX8

PLASTIC/EPOXY

VBGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

4K

PARALLEL

3/3.3

2.7

Not Qualified

YES

1 mm

512K

Flash Memories

50 mA

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

BALL

1 mm

BOTTOM

NO

SLC NAND TYPE

12 mm

MT29F16G08ABCCBH1-10ITZ:C by Micron Technology

MT29F16G08ABCCBH1-10ITZ:C

Micron Technology

MT29F16G08ABCCBH1-10ITZ:C by Micron Technology is a 3.3V SLC NAND flash memory with 2GX8 organization, 4K page size, and 512K sector size. It operates synchronously in industrial temperatures, featuring a parallel interface with 100 terminals. Ideal for applications requiring fast access times and high memory density.

20 ns

YES

NO

R-PBGA-B100

18 mm

17179869184 bit

FLASH

8

1

4K

100

2147483648 words

2G

SYNCHRONOUS

85 Cel

-40 Cel

2GX8

PLASTIC/EPOXY

VBGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

4K

PARALLEL

3/3.3

2.7

Not Qualified

YES

1 mm

512K

.00005 Amp

Flash Memories

50 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NO

SLC NAND TYPE

12 mm

S40410081B1B2I000 by Cypress Semiconductor

S40410081B1B2I000

Cypress Semiconductor

Cypress Semiconductor's S40410081B1B2I000 is a 100-terminal, 8GX8 organization, MLC NAND flash memory with 68719476736-bit density. Operating at -40 to 85 °C, it features synchronous mode and parallel interface for industrial applications. Package: PLASTIC/EPOXY, RECTANGULAR shape, GRID ARRAY style with low profile.

4

R-PBGA-B100

18 mm

68719476736 bit

FLASH

8

1

100

8589934592 words

8G

SYNCHRONOUS

85 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

3

1.4 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

MLC NAND TYPE

14 mm

S40410081B1B2W000 by Cypress Semiconductor

S40410081B1B2W000

Cypress Semiconductor

Cypress Semiconductor's S40410081B1B2W000 is a 8GX8 MLC NAND Flash Memory with 68719476736 bit memory density. Operating at 3V, it offers 8589934592 words and features synchronous operation in a low profile grid array package. Ideal for applications requiring high memory capacity and fast data access speeds.

4

R-PBGA-B100

18 mm

68719476736 bit

FLASH

8

1

100

8589934592 words

8G

SYNCHRONOUS

85 Cel

-25 Cel

8GX8

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

3

1.4 mm

3.6 V

2.7 V

3

YES

CMOS

OTHER

BALL

1 mm

BOTTOM

MLC NAND TYPE

14 mm

S40410161B1B2I010 by Cypress Semiconductor

S40410161B1B2I010

Cypress Semiconductor

Cypress Semiconductor's S40410161B1B2I010 is a 16GX8 MLC NAND flash memory with 137.4 Gb density. Operating at 3V, it has a temperature range of -40 to 85°C and uses synchronous parallel technology. Ideal for industrial applications requiring high-speed data storage in a compact GRID ARRAY package measuring 18mm x 14mm x 1.4mm.

4

R-PBGA-B100

18 mm

137438953472 bit

FLASH

8

1

100

17179869184 words

16G

SYNCHRONOUS

85 Cel

-40 Cel

16GX8

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

3

1.4 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

MLC NAND TYPE

14 mm

S40410161B1B2W010 by Cypress Semiconductor

S40410161B1B2W010

Cypress Semiconductor

S40410161B1B2W010 by Cypress Semiconductor is a 16GX8 MLC NAND Flash Memory with 137.4Gb density. Operating at 3V, it has a low profile grid array package and synchronous mode for parallel programming. Ideal for applications requiring high memory capacity in compact devices with temperatures ranging from -25 to 85°C.

4

R-PBGA-B100

18 mm

137438953472 bit

FLASH

8

1

100

17179869184 words

16G

SYNCHRONOUS

85 Cel

-25 Cel

16GX8

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

3

1.4 mm

3.6 V

2.7 V

3

YES

CMOS

OTHER

BALL

1 mm

BOTTOM

MLC NAND TYPE

14 mm

MTFC16GAKAENA-4MIT by Micron Technology

MTFC16GAKAENA-4MIT

Micron Technology

Micron Technology's MTFC16GAKAENA-4MIT is a 16GX8 flash memory with 17179869184 words capacity. Operating in synchronous mode, it has a temperature range of -40 to 85 °C and supports parallel programming. With a compact rectangular shape and thin profile, it is ideal for industrial applications requiring high memory density and fast data access.

R-PBGA-B100

e1

18 mm

137438953472 bit

FLASH CARD

8

3

1

100

17179869184 words

16G

SYNCHRONOUS

85 Cel

-40 Cel

16GX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

14 mm

MTFC32GAKAENA-4MIT by Micron Technology

MTFC32GAKAENA-4MIT

Micron Technology

Micron Technology's MTFC32GAKAENA-4MIT is a 32GX8 flash memory with 274877906944 bit density. Operating in synchronous mode, it has a temperature range of -40 to 85 °C and supports parallel programming. With a compact rectangular shape and thin profile, this flash card is ideal for industrial applications requiring high-speed data storage.

R-PBGA-B100

e1

18 mm

274877906944 bit

FLASH CARD

8

1

100

34359738368 words

32G

SYNCHRONOUS

85 Cel

-40 Cel

32GX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

14 mm

IS21ES04G-JQLI by Integrated Silicon Solution

IS21ES04G-JQLI

Integrated Silicon Solution

IS21ES04G-JQLI by Integrated Silicon Solution is a 4GX8 flash memory with 34359738368 bit density. Operating at 3.3V, it offers synchronous mode and industrial temperature grade suitability. With a package size of 18mm x 14mm, this low-profile grid array memory chip is ideal for high-performance applications requiring parallel data processing.

R-PBGA-B100

e1

18 mm

34359738368 bit

FLASH

8

3

1

100

4294967296 words

4G

SYNCHRONOUS

85 Cel

-40 Cel

4GX8

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

260

3.3

1.4 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

10

14 mm

MTFC16GAKAENA-4MITTR by Micron Technology

MTFC16GAKAENA-4MITTR

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 100; Package Code: TBGA; Package Shape: RECTANGULAR; No. of Words: 17179869184 words;

R-PBGA-B100

e1

18 mm

137438953472 bit

FLASH CARD

8

3

1

100

17179869184 words

16G

SYNCHRONOUS

85 Cel

-40 Cel

16GX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

14 mm

MTFC4GMWDQ-3MAIT by Micron Technology

MTFC4GMWDQ-3MAIT

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 100; Package Code: LBGA; Package Shape: RECTANGULAR; No. of Words Code: 4G;

R-PBGA-B100

18 mm

34359738368 bit

FLASH CARD

8

1

100

4294967296 words

4G

SYNCHRONOUS

85 Cel

-40 Cel

4GX8

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

NOT SPECIFIED

2.7

1.4 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

14 mm

MTFC4GLMDQ-AITZ by Micron Technology

MTFC4GLMDQ-AITZ

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 100; Package Code: LBGA; Package Shape: RECTANGULAR; Terminal Form: BALL;

52 MHz

R-PBGA-B100

18 mm

34359738368 bit

FLASH CARD

8

1

100

4294967296 words

4G

SYNCHRONOUS

85 Cel

-40 Cel

4GX8

OPEN-DRAIN

PLASTIC/EPOXY

LBGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

NOT SPECIFIED

2.7

1.4 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

MLC NAND TYPE

14 mm

MTFC8GLWDQ-3LAITZ by Micron Technology

MTFC8GLWDQ-3LAITZ

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 100; Package Code: LBGA; Package Shape: RECTANGULAR; Terminal Position: BOTTOM;

R-PBGA-B100

e1

18 mm

68719476736 bit

FLASH

8

1

100

8589934592 words

8G

SYNCHRONOUS

85 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

260

2.7

1.4 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

14 mm

MTFC4GLGDQ-AITA by Micron Technology

MTFC4GLGDQ-AITA

Micron Technology

MTFC4GLGDQ-AITA by Micron Technology is a 4GX8 MLC NAND flash memory with 34359738368-bit density. Operating in synchronous mode, it has a low profile grid array package style and operates at industrial temperature grade. Ideal for applications requiring high memory capacity and fast data access speeds.

R-PBGA-B100

e1

18 mm

34359738368 bit

FLASH CARD

8

1

100

4294967296 words

4G

SYNCHRONOUS

85 Cel

-40 Cel

4GX8

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

260

2.7

1.4 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

MLC NAND TYPE

14 mm

MTFC4GLGDQ-AITZTR by Micron Technology

MTFC4GLGDQ-AITZTR

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 100; Package Code: LBGA; Package Shape: RECTANGULAR; Width: 14 mm;

4

R-PBGA-B100

e1

18 mm

34359738368 bit

FLASH CARD

8

1

100

4294967296 words

4G

SYNCHRONOUS

85 Cel

-40 Cel

4GX8

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

2.7

1.4 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

14 mm