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100 Flash Memory 122

Flash Memory
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Boot Block Maximum Clock Frequency (fCLK) Command User Interface Common Flash Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Type Width Maximum Write Cycle Time (tWC) Write Protection
MTFC4GLMDQ-AITZTR by Micron Technology

MTFC4GLMDQ-AITZTR

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 100; Package Code: LBGA; Package Shape: RECTANGULAR; No. of Words: 4294967296 words;

52 MHz

R-PBGA-B100

18 mm

34359738368 bit

FLASH CARD

8

1

100

4294967296 words

4G

SYNCHRONOUS

85 Cel

-40 Cel

4GX8

OPEN-DRAIN

PLASTIC/EPOXY

LBGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

2.7

1.4 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

MLC NAND TYPE

14 mm

MTFC16GAPALHT-AIT by Micron Technology

MTFC16GAPALHT-AIT

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 100; Package Code: BGA; Package Shape: RECTANGULAR; Maximum Supply Voltage (Vsup): 3.6 V;

200 MHz

5

R-PBGA-B100

18 mm

137438953472 bit

FLASH CARD

8

1

100

17179869184 words

16G

SYNCHRONOUS

85 Cel

-40 Cel

16GX8

PLASTIC/EPOXY

BGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

PARALLEL

AEC-Q100

1 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOR TYPE

14 mm

FEMC016GTTG7-T13-27 by Flexxon Global

FEMC016GTTG7-T13-27

Flexxon Global

FEMC016GTTG7-T13-27 by Flexxon Global is a SLC NAND flash memory with 16GX8 organization and 137.4Gb density. It operates in industrial temperature range (-40 to 85°C) and has AEC-Q100 screening level for automotive applications. The package is rectangular, surface mountable, with 100 terminals at a nominal voltage of 3.3V.

R-PBGA-B100

137438953472 bit

FLASH CARD

8

1

100

17179869184 words

16G

85 Cel

-40 Cel

16GX8

PLASTIC/EPOXY

RECTANGULAR

AEC-Q100; TS 16949

3.3

YES

CMOS

INDUSTRIAL

BALL

BOTTOM

SLC NAND TYPE

FEMC032GTTE7-T13-26 by Flexxon Global

FEMC032GTTE7-T13-26

Flexxon Global

FEMC032GTTE7-T13-26 by Flexxon Global is a 32GX8 MLC NAND flash memory with 274877906944-bit density. Operating at -25 to 85 °C, it has AEC-Q100 screening for automotive applications. With 3.3V supply and 100 terminals in a rectangular package, it's ideal for high-density data storage needs.

R-PBGA-B100

274877906944 bit

FLASH CARD

8

1

100

34359738368 words

32G

85 Cel

-25 Cel

32GX8

PLASTIC/EPOXY

RECTANGULAR

AEC-Q100; TS 16949

3.3

YES

CMOS

OTHER

BALL

BOTTOM

MLC NAND TYPE

FEMC004GTTG7-T13-17 by Flexxon Global

FEMC004GTTG7-T13-17

Flexxon Global

FEMC004GTTG7-T13-17 by Flexxon Global is a SLC NAND flash memory with 4GX8 organization and 4G word code. It operates at industrial temperature grade (-40 to 85 °C) and has a memory density of 34.36Gb. It is suitable for applications requiring high reliability and endurance, such as automotive electronics or industrial control systems.

R-PBGA-B100

34359738368 bit

FLASH CARD

8

1

100

4294967296 words

4G

85 Cel

-40 Cel

4GX8

PLASTIC/EPOXY

RECTANGULAR

AEC-Q100; TS 16949

3.3

YES

CMOS

INDUSTRIAL

BALL

BOTTOM

SLC NAND TYPE

FEMC008GTTE7-T13-17 by Flexxon Global

FEMC008GTTE7-T13-17

Flexxon Global

FEMC008GTTE7-T13-17 by Flexxon Global is an SLC NAND flash memory with 8GX8 organization, 3.3V supply voltage, and 85°C max operating temp. Ideal for automotive applications due to AEC-Q100 screening level and TS 16949 certification, offering high reliability in harsh environments.

R-PBGA-B100

68719476736 bit

FLASH CARD

8

1

100

8589934592 words

8G

85 Cel

-25 Cel

8GX8

PLASTIC/EPOXY

RECTANGULAR

AEC-Q100; TS 16949

3.3

YES

CMOS

OTHER

BALL

BOTTOM

SLC NAND TYPE

FEMC016GTTG7-T13-16 by Flexxon Global

FEMC016GTTG7-T13-16

Flexxon Global

FEMC016GTTG7-T13-16 by Flexxon Global is a 16GX8 MLC NAND flash card with 137.4Tb memory density, suitable for industrial applications. It operates at -40 to 85°C, has 100 terminals in a rectangular package, and meets AEC-Q100 standards.

R-PBGA-B100

137438953472 bit

FLASH CARD

8

1

100

17179869184 words

16G

85 Cel

-40 Cel

16GX8

PLASTIC/EPOXY

RECTANGULAR

AEC-Q100; TS 16949

3.3

YES

CMOS

INDUSTRIAL

BALL

BOTTOM

MLC NAND TYPE

FEMC004GTTG7-T13-16 by Flexxon Global

FEMC004GTTG7-T13-16

Flexxon Global

FEMC004GTTG7-T13-16 by Flexxon Global is a 3.3V MLC NAND Flash Memory with 4GX8 organization, 100 terminals, and 34359738368 bit memory density. It operates in industrial temperature range (-40 to 85 °C) and is suitable for applications requiring high-density storage in automotive electronics or industrial devices.

R-PBGA-B100

34359738368 bit

FLASH CARD

8

1

100

4294967296 words

4G

85 Cel

-40 Cel

4GX8

PLASTIC/EPOXY

RECTANGULAR

AEC-Q100; TS 16949

3.3

YES

CMOS

INDUSTRIAL

BALL

BOTTOM

MLC NAND TYPE

FEMC008GTTG7-T13-17 by Flexxon Global

FEMC008GTTG7-T13-17

Flexxon Global

FEMC008GTTG7-T13-17 by Flexxon Global is an 8GX8 SLC NAND flash memory with 68719476736-bit density. Operating at -40 to 85 °C, it's AEC-Q100 and TS 16949 compliant for industrial use. With a rectangular package and PLASTIC/EPOXY material, it has 100 terminals for surface mount applications.

R-PBGA-B100

68719476736 bit

FLASH CARD

8

1

100

8589934592 words

8G

85 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

RECTANGULAR

AEC-Q100; TS 16949

3.3

YES

CMOS

INDUSTRIAL

BALL

BOTTOM

SLC NAND TYPE

FEMC016GTTE7-T13-27 by Flexxon Global

FEMC016GTTE7-T13-27

Flexxon Global

FEMC016GTTE7-T13-27 by Flexxon Global is a SLC NAND flash memory with 16GX8 organization and 137.4Gb density. It operates at -25 to 85°C, has 100 terminals, and uses CMOS technology. Ideal for automotive applications due to AEC-Q100 screening level and TS16949 certification.

R-PBGA-B100

137438953472 bit

FLASH CARD

8

1

100

17179869184 words

16G

85 Cel

-25 Cel

16GX8

PLASTIC/EPOXY

RECTANGULAR

AEC-Q100; TS 16949

3.3

YES

CMOS

OTHER

BALL

BOTTOM

SLC NAND TYPE

FEMC008GTTA7-T13-16 by Flexxon Global

FEMC008GTTA7-T13-16

Flexxon Global

FEMC008GTTA7-T13-16 by Flexxon Global is an 8GX8 MLC NAND flash memory card with 68719476736 bit density. Operating at -40 to 85 °C, it has a supply voltage of 3.3V and meets AEC-Q100 standards. Ideal for industrial applications requiring high-density memory in a compact rectangular package.

R-PBGA-B100

68719476736 bit

FLASH CARD

8

1

100

8589934592 words

8G

85 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

RECTANGULAR

AEC-Q100; TS 16949

3.3

YES

CMOS

INDUSTRIAL

BALL

BOTTOM

MLC NAND TYPE

FEMC008GTTG7-T13-16 by Flexxon Global

FEMC008GTTG7-T13-16

Flexxon Global

FEMC008GTTG7-T13-16 by Flexxon Global is an 8GX8 MLC NAND flash memory card with 68719476736-bit density. It operates at industrial temperature grade (-40 to 85 °C) and has a supply voltage of 3.3V. Suitable for automotive applications due to AEC-Q100 screening level and TS16949 certification.

R-PBGA-B100

68719476736 bit

FLASH CARD

8

1

100

8589934592 words

8G

85 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

RECTANGULAR

AEC-Q100; TS 16949

3.3

YES

CMOS

INDUSTRIAL

BALL

BOTTOM

MLC NAND TYPE

FEMC004GTTE7-T13-17 by Flexxon Global

FEMC004GTTE7-T13-17

Flexxon Global

FEMC004GTTE7-T13-17 by Flexxon Global is a SLC NAND flash memory with 4GX8 organization, 3.3V supply voltage, and 100 terminals. It operates b/w -25°C to 85°C, suitable for automotive applications meeting AEC-Q100 standards. With a memory density of 34.36 Gb, it's ideal for high-performance storage solutions in harsh environments.

R-PBGA-B100

34359738368 bit

FLASH CARD

8

1

100

4294967296 words

4G

85 Cel

-25 Cel

4GX8

PLASTIC/EPOXY

RECTANGULAR

AEC-Q100; TS 16949

3.3

YES

CMOS

OTHER

BALL

BOTTOM

SLC NAND TYPE

FEMC008GTTE7-T13-16 by Flexxon Global

FEMC008GTTE7-T13-16

Flexxon Global

Flexxon Global's FEMC008GTTE7-T13-16 Flash Memory features 8GX8 organization, MLC NAND technology, and 3.3V nominal voltage. Ideal for automotive applications with AEC-Q100 screening level, TS 16949 certification, and operating temperatures ranging from -25 to 85°C.

R-PBGA-B100

68719476736 bit

FLASH CARD

8

1

100

8589934592 words

8G

85 Cel

-25 Cel

8GX8

PLASTIC/EPOXY

RECTANGULAR

AEC-Q100; TS 16949

3.3

YES

CMOS

OTHER

BALL

BOTTOM

MLC NAND TYPE

FEMC016GTTA7-T13-16 by Flexxon Global

FEMC016GTTA7-T13-16

Flexxon Global

FEMC016GTTA7-T13-16 by Flexxon Global is a 16GX8 MLC NAND flash card with 137.4Tb memory density, operating at -40 to 85°C. Suitable for industrial applications, it features AEC-Q100 screening and TS 16949 certification, with a supply voltage of 3.3V and 100 terminals in a rectangular package.

R-PBGA-B100

137438953472 bit

FLASH CARD

8

1

100

17179869184 words

16G

85 Cel

-40 Cel

16GX8

PLASTIC/EPOXY

RECTANGULAR

AEC-Q100; TS 16949

3.3

YES

CMOS

INDUSTRIAL

BALL

BOTTOM

MLC NAND TYPE

FEMC016GTTE7-T13-16 by Flexxon Global

FEMC016GTTE7-T13-16

Flexxon Global

FEMC016GTTE7-T13-16 by Flexxon Global is a flash memory with 16GX8 organization and MLC NAND type technology. It has a memory density of 137438953472 bits and operates at temperatures ranging from -25 to 85°C. This memory card is suitable for applications requiring high storage capacity and reliable performance.

R-PBGA-B100

137438953472 bit

FLASH CARD

8

1

100

17179869184 words

16G

85 Cel

-25 Cel

16GX8

PLASTIC/EPOXY

RECTANGULAR

AEC-Q100; TS 16949

3.3

YES

CMOS

OTHER

BALL

BOTTOM

MLC NAND TYPE

MTFC64GAPALHT-AIT by Micron Technology

MTFC64GAPALHT-AIT

Micron Technology

Micron Technology's MTFC64GAPALHT-AIT is a 64GX8 NAND flash memory with 549755813888 bit density. Operating at up to 200 MHz, it offers -40 to 85 °C temp range and AEC-Q100 screening for industrial applications. With a very thin profile, this package features a grid array style suitable for high-speed data storage systems.

200 MHz

5

R-PBGA-B100

18 mm

549755813888 bit

FLASH CARD

8

1

100

68719476736 words

64G

SYNCHRONOUS

85 Cel

-40 Cel

64GX8

PLASTIC/EPOXY

VBGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

PARALLEL

AEC-Q100

1 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NAND TYPE

14 mm

MTFC16GAPALHT-AAT by Micron Technology

MTFC16GAPALHT-AAT

Micron Technology

MTFC16GAPALHT-AAT by Micron Technology is a 16GX8 NAND flash memory with 17179869184 words capacity. Operating at up to 200 MHz, it has a memory density of 137438953472 bit and supports industrial temperature grade applications. With a very thin profile package style, it is suitable for high-performance devices requiring fast data storage and retrieval.

200 MHz

5

R-PBGA-B100

18 mm

137438953472 bit

FLASH CARD

8

1

100

17179869184 words

16G

SYNCHRONOUS

105 Cel

-40 Cel

16GX8

PLASTIC/EPOXY

VBGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

PARALLEL

AEC-Q100

1 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NAND TYPE

14 mm

MTFC8GAMALHT-AIT by Micron Technology

MTFC8GAMALHT-AIT

Micron Technology

Micron Technology's MTFC8GAMALHT-AIT is a NAND flash memory with 8GX8 organization, 200 MHz clock frequency, and 85°C max operating temp. Ideal for industrial applications requiring high-speed data storage in compact devices due to its very thin profile package style and AEC-Q100 screening level.

200 MHz

5

R-PBGA-B100

18 mm

68719476736 bit

FLASH CARD

8

1

100

8589934592 words

8G

SYNCHRONOUS

85 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

VBGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

PARALLEL

AEC-Q100

1 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NAND TYPE

14 mm

MTFC8GAMALHT-AAT by Micron Technology

MTFC8GAMALHT-AAT

Micron Technology

MTFC8GAMALHT-AAT by Micron Technology is a 8GX8 NAND flash memory with 68719476736 bit density. It operates in synchronous mode at up to 200 MHz clock frequency, suitable for industrial applications requiring high-speed data storage and retrieval. With a temperature range of -40 to 105 °C, it offers reliable performance in harsh environments.

200 MHz

5

R-PBGA-B100

18 mm

68719476736 bit

FLASH CARD

8

1

100

8589934592 words

8G

SYNCHRONOUS

105 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

VBGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

PARALLEL

AEC-Q100

1 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NAND TYPE

14 mm

MTFC32GAPALHT-AAT by Micron Technology

MTFC32GAPALHT-AAT

Micron Technology

MTFC32GAPALHT-AAT by Micron Technology is a 32GX8 NAND flash memory with 34359738368 words capacity. Operating at up to 200 MHz, it offers industrial-grade performance with -40 to 105 °C temperature range. Ideal for applications requiring high-speed data storage in compact form factors.

200 MHz

5

R-PBGA-B100

18 mm

274877906944 bit

FLASH CARD

8

1

100

34359738368 words

32G

SYNCHRONOUS

105 Cel

-40 Cel

32GX8

PLASTIC/EPOXY

VBGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

PARALLEL

AEC-Q100

1 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NAND TYPE

14 mm

MTFC32GAPALHT-AIT by Micron Technology

MTFC32GAPALHT-AIT

Micron Technology

Micron Technology's MTFC32GAPALHT-AIT is a 32GX8 NAND flash memory with 34359738368 words capacity. Operating at up to 200 MHz, it features a very thin profile grid array package suitable for industrial applications. With a temperature range of -40 to 85 °C, this CMOS technology memory supports parallel operation and has a min data retention time of 5 units.

200 MHz

5

R-PBGA-B100

18 mm

274877906944 bit

FLASH CARD

8

1

100

34359738368 words

32G

SYNCHRONOUS

85 Cel

-40 Cel

32GX8

PLASTIC/EPOXY

VBGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

PARALLEL

AEC-Q100

1 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NAND TYPE

14 mm

MTFC4GLGDQ-AIT by Micron Technology

MTFC4GLGDQ-AIT

Micron Technology

FLASH; No. of Terminals: 100; Package Code: LBGA; Package Shape: RECTANGULAR; Technology: CMOS; Package Equivalence Code: BGA100,10X17,40;

52 MHz

NO

NO

R-PBGA-B100

18 mm

34359738368 bit

FLASH

8

1

100

4294967296 words

4G

SYNCHRONOUS

85 Cel

-40 Cel

4GX8

PLASTIC/EPOXY

LBGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.4 mm

3.6 V

2.7 V

YES

CMOS

BALL

1 mm

BOTTOM

NO

MLC NAND TYPE

14 mm

MTFC32GJGDQ-AIT by Micron Technology

MTFC32GJGDQ-AIT

Micron Technology

FLASH; No. of Terminals: 100; Package Code: LBGA; Package Shape: RECTANGULAR; Memory Density: 274877906944 bit; Command User Interface: NO;

52 MHz

NO

NO

R-PBGA-B100

18 mm

274877906944 bit

FLASH

8

1

100

34359738368 words

32G

SYNCHRONOUS

85 Cel

-40 Cel

32GX8

PLASTIC/EPOXY

LBGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.4 mm

3.6 V

2.7 V

YES

CMOS

BALL

1 mm

BOTTOM

NO

MLC NAND TYPE

14 mm

MTFC32GAZAQDW-AAT by Micron Technology

MTFC32GAZAQDW-AAT

Micron Technology

MTFC32GAZAQDW-AAT by Micron Technology is a 32GX8 NAND flash memory with 3.3V supply voltage, operating at up to 200MHz clock frequency. AEC-Q100 screening makes it suitable for automotive applications requiring high reliability in harsh environments. Its low profile grid array package and synchronous operation offer compact design and efficient data transfer for automotive electronics.

200 MHz

R-PBGA-B100

18 mm

274877906944 bit

FLASH CARD

8

1

100

34359738368 words

32G

SYNCHRONOUS

105 Cel

-40 Cel

32GX8

PLASTIC/EPOXY

LBGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

3.3

AEC-Q100

1.5 mm

3.6 V

2.7 V

3.3

YES

CMOS

BALL

1 mm

BOTTOM

NAND TYPE

14 mm

MTFC32GAZAQDW-AATTR by Micron Technology

MTFC32GAZAQDW-AATTR

Micron Technology

Micron Technology's MTFC32GAZAQDW-AATTR is a 32GX8 NAND flash memory with 3.3V supply voltage, operating at up to 200MHz clock frequency. Designed for automotive applications meeting AEC-Q100 standards, it offers high memory density of 274877906944 bits in a compact GRID ARRAY package style.

200 MHz

R-PBGA-B100

18 mm

274877906944 bit

FLASH CARD

8

1

100

34359738368 words

32G

SYNCHRONOUS

105 Cel

-40 Cel

32GX8

PLASTIC/EPOXY

LBGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

3.3

AEC-Q100

1.5 mm

3.6 V

2.7 V

3.3

YES

CMOS

BALL

1 mm

BOTTOM

NAND TYPE

14 mm