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100 Flash Memory 122

Flash Memory
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Boot Block Maximum Clock Frequency (fCLK) Command User Interface Common Flash Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Type Width Maximum Write Cycle Time (tWC) Write Protection
MT29F16G08ABCCBH1-10:C by Micron Technology

MT29F16G08ABCCBH1-10:C

Micron Technology

MT29F16G08ABCCBH1-10:C by Micron Technology is a 2GX8 SLC NAND flash memory with 4K sectors and 2147483648 words. It operates at 3/3.3V, has a package style of GRID ARRAY, and uses parallel interface. Ideal for commercial applications requiring fast access time and low standby current.

20 ns

YES

NO

R-PBGA-B100

17179869184 bit

FLASH

8

4K

100

2147483648 words

2G

70 Cel

0 Cel

2GX8

PLASTIC/EPOXY

BGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY

4K

PARALLEL

3/3.3

Not Qualified

YES

512K

.00005 Amp

Flash Memories

50 mA

YES

CMOS

COMMERCIAL

BALL

1 mm

BOTTOM

NO

SLC NAND TYPE

MT29F8G08ABCBBH1-12:B by Micron Technology

MT29F8G08ABCBBH1-12:B

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 100; Package Code: BGA; Package Shape: RECTANGULAR; Maximum Operating Temperature: 70 Cel;

20 ns

YES

NO

R-PBGA-B100

8589934592 bit

FLASH

8

2K

100

1073741824 words

1G

70 Cel

0 Cel

1GX8

PLASTIC/EPOXY

BGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY

4K

PARALLEL

1.8

Not Qualified

YES

512K

.00005 Amp

Flash Memories

50 mA

1.8

YES

CMOS

COMMERCIAL

BALL

1 mm

BOTTOM

NO

SLC NAND TYPE

MT29F8G08ABCBBH1-12IT:B by Micron Technology

MT29F8G08ABCBBH1-12IT:B

Micron Technology

Micron Technology's MT29F8G08ABCBBH1-12IT:B is a 1.8V SLC NAND flash memory with 1GX8 organization, 4K page size, and 512K sector size. It operates in industrial temperature range (-40 to 85 °C) with parallel interface and 100 terminals on a grid array package. Ideal for applications requiring high-density memory storage and fast access times.

20 ns

YES

NO

R-PBGA-B100

8589934592 bit

FLASH

8

2K

100

1073741824 words

1G

85 Cel

-40 Cel

1GX8

PLASTIC/EPOXY

BGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY

4K

PARALLEL

1.8

Not Qualified

YES

512K

.00005 Amp

Flash Memories

50 mA

1.8

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NO

SLC NAND TYPE

MT29F32G08ABCABH1-10:A by Micron Technology

MT29F32G08ABCABH1-10:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 100; Package Code: BGA; Package Shape: RECTANGULAR; Terminal Position: BOTTOM;

20 ns

YES

NO

R-PBGA-B100

34359738368 bit

FLASH

8

4K

100

4294967296 words

4G

70 Cel

0 Cel

4GX8

PLASTIC/EPOXY

BGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY

8K

PARALLEL

1.8,3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

COMMERCIAL

BALL

1 mm

BOTTOM

NO

SLC NAND TYPE

MT29F64G08AECABH1-10:A by Micron Technology

MT29F64G08AECABH1-10:A

Micron Technology

MT29F64G08AECABH1-10:A by Micron Technology is a 8GX8 SLC NAND flash memory with 8K sectors. It operates at temperatures from 0 to 70 °C and has a max access time of 20 ns. Suitable for commercial applications, it features a package style of GRID ARRAY and uses parallel interface with 100 terminals.

20 ns

YES

NO

R-PBGA-B100

68719476736 bit

FLASH

8

8K

100

8589934592 words

8G

70 Cel

0 Cel

8GX8

PLASTIC/EPOXY

BGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY

8K

PARALLEL

1.8,3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

COMMERCIAL

BALL

1 mm

BOTTOM

NO

SLC NAND TYPE

MT29F64G08AECABH1-10IT:A by Micron Technology

MT29F64G08AECABH1-10IT:A

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 100; Package Code: BGA; Package Shape: RECTANGULAR; Command User Interface: YES;

20 ns

YES

NO

R-PBGA-B100

68719476736 bit

FLASH

8

8K

100

8589934592 words

8G

85 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

BGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY

8K

PARALLEL

1.8,3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NO

SLC NAND TYPE

MT29F256G08AUCABH3-10:A by Micron Technology

MT29F256G08AUCABH3-10:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 100; Package Code: BGA; Package Shape: RECTANGULAR; Parallel or Serial: PARALLEL;

20 ns

YES

NO

R-PBGA-B100

274877906944 bit

FLASH

32K

100

70 Cel

0 Cel

PLASTIC/EPOXY

BGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY

8K

PARALLEL

1.8,3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

COMMERCIAL

BALL

1 mm

BOTTOM

NO

SLC NAND TYPE

MT29F256G08AUCABH3-10IT:A by Micron Technology

MT29F256G08AUCABH3-10IT:A

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 100; Package Code: BGA; Package Shape: RECTANGULAR; Package Equivalence Code: BGA100,10X17,40;

20 ns

YES

NO

R-PBGA-B100

274877906944 bit

FLASH

32K

100

85 Cel

-40 Cel

PLASTIC/EPOXY

BGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY

8K

PARALLEL

1.8,3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NO

SLC NAND TYPE

MT29F128G08AKCABH2-10:A by Micron Technology

MT29F128G08AKCABH2-10:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 100; Package Code: BGA; Package Shape: RECTANGULAR; Package Style (Meter): GRID ARRAY;

20 ns

YES

NO

R-PBGA-B100

137438953472 bit

FLASH

8

16K

100

17179869184 words

16G

70 Cel

0 Cel

16GX8

PLASTIC/EPOXY

BGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY

8K

PARALLEL

1.8,3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

COMMERCIAL

BALL

1 mm

BOTTOM

NO

SLC NAND TYPE

MT29F128G08AMCABH2-10:A by Micron Technology

MT29F128G08AMCABH2-10:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 100; Package Code: BGA; Package Shape: RECTANGULAR; Organization: 16GX8;

20 ns

YES

NO

R-PBGA-B100

137438953472 bit

FLASH

8

16K

100

17179869184 words

16G

70 Cel

0 Cel

16GX8

PLASTIC/EPOXY

BGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY

8K

PARALLEL

1.8,3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

COMMERCIAL

BALL

1 mm

BOTTOM

NO

SLC NAND TYPE

MT29F128G08AMCABH2-10IT:A by Micron Technology

MT29F128G08AMCABH2-10IT:A

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 100; Package Code: BGA; Package Shape: RECTANGULAR; Ready or Busy: YES;

20 ns

YES

NO

R-PBGA-B100

137438953472 bit

FLASH

8

16K

100

17179869184 words

16G

85 Cel

-40 Cel

16GX8

PLASTIC/EPOXY

BGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY

8K

PARALLEL

1.8,3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NO

SLC NAND TYPE

MT29F64G08AKCCBH2-10Z:C by Micron Technology

MT29F64G08AKCCBH2-10Z:C

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 100; Package Code: BGA; Package Shape: RECTANGULAR; Qualification: Not Qualified;

20 ns

YES

NO

R-PBGA-B100

68719476736 bit

FLASH

8

16K

100

8589934592 words

8G

70 Cel

0 Cel

8GX8

PLASTIC/EPOXY

BGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY

4K

PARALLEL

3/3.3

Not Qualified

YES

512K

.00005 Amp

Flash Memories

50 mA

YES

CMOS

COMMERCIAL

BALL

1 mm

BOTTOM

NO

SLC NAND TYPE

MT29F32G08ABCABH1-10Z:A by Micron Technology

MT29F32G08ABCABH1-10Z:A

Micron Technology

Micron Technology's MT29F32G08ABCABH1-10Z:A is a 4GX8 SLC NAND flash memory with 4294967296 words capacity. It operates at temperatures from 0 to 70°C, with a max access time of 20 ns. Ideal for commercial applications requiring high memory density and low standby current consumption.

20 ns

YES

NO

R-PBGA-B100

34359738368 bit

FLASH

8

4K

100

4294967296 words

4G

70 Cel

0 Cel

4GX8

PLASTIC/EPOXY

BGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY

8K

PARALLEL

1.8,3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

COMMERCIAL

BALL

1 mm

BOTTOM

NO

SLC NAND TYPE

MT29F64G08AECABH1-10ITZ:A by Micron Technology

MT29F64G08AECABH1-10ITZ:A

Micron Technology

MT29F64G08AECABH1-10ITZ:A by Micron Technology is an 8GX8 SLC NAND flash memory with 8K sectors. Operating at -40 to 85 °C, it has a memory density of 68719476736 bit and max access time of 20 ns. Ideal for industrial applications requiring fast, reliable data storage with low standby current consumption.

20 ns

YES

NO

R-PBGA-B100

68719476736 bit

FLASH

8

8K

100

8589934592 words

8G

85 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

BGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY

8K

PARALLEL

1.8,3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NO

SLC NAND TYPE

MT29F64G08AECABH1-10Z:A by Micron Technology

MT29F64G08AECABH1-10Z:A

Micron Technology

MT29F64G08AECABH1-10Z:A by Micron Technology is a 8GX8 SLC NAND flash memory with 8K sectors and 1M word sector size. Operating at 0-70 °C, it has a max access time of 20 ns and consumes up to 50 mA current. Ideal for commercial applications requiring high memory density and fast data access.

20 ns

YES

NO

R-PBGA-B100

68719476736 bit

FLASH

8

8K

100

8589934592 words

8G

70 Cel

0 Cel

8GX8

PLASTIC/EPOXY

BGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY

8K

PARALLEL

1.8,3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

COMMERCIAL

BALL

1 mm

BOTTOM

NO

SLC NAND TYPE

MT29F128G08AKCABH2-10Z:A by Micron Technology

MT29F128G08AKCABH2-10Z:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 100; Package Code: BGA; Package Shape: RECTANGULAR; Page Size (words): 8K;

20 ns

YES

NO

R-PBGA-B100

137438953472 bit

FLASH

8

16K

100

17179869184 words

16G

70 Cel

0 Cel

16GX8

PLASTIC/EPOXY

BGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY

8K

PARALLEL

1.8,3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

COMMERCIAL

BALL

1 mm

BOTTOM

NO

SLC NAND TYPE

MT29F128G08AKCABH2-10ITZ:A by Micron Technology

MT29F128G08AKCABH2-10ITZ:A

Micron Technology

Micron Technology's MT29F128G08AKCABH2-10ITZ:A is a 16GX8 SLC NAND flash memory with 1M sector size and 8K page size. It operates at industrial temperature grade, with parallel interface and 100 terminals in a grid array package. Ideal for applications requiring high-speed data storage and retrieval.

20 ns

YES

NO

R-PBGA-B100

137438953472 bit

FLASH

8

16K

100

17179869184 words

16G

85 Cel

-40 Cel

16GX8

PLASTIC/EPOXY

BGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY

8K

PARALLEL

1.8,3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NO

SLC NAND TYPE

MT29F128G08AMCABH2-10ITZ:A by Micron Technology

MT29F128G08AMCABH2-10ITZ:A

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 100; Package Code: BGA; Package Shape: RECTANGULAR; Power Supplies (V): 1.8,3/3.3;

20 ns

YES

NO

R-PBGA-B100

137438953472 bit

FLASH

8

16K

100

17179869184 words

16G

85 Cel

-40 Cel

16GX8

PLASTIC/EPOXY

BGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY

8K

PARALLEL

260

1.8,3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

30

NO

SLC NAND TYPE

MT29F128G08AMCABH2-10Z:A by Micron Technology

MT29F128G08AMCABH2-10Z:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 100; Package Code: BGA; Package Shape: RECTANGULAR; Maximum Standby Current: .00001 Amp;

20 ns

YES

NO

R-PBGA-B100

137438953472 bit

FLASH

8

16K

100

17179869184 words

16G

70 Cel

0 Cel

16GX8

PLASTIC/EPOXY

BGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY

8K

PARALLEL

1.8,3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

COMMERCIAL

BALL

1 mm

BOTTOM

NO

SLC NAND TYPE

MT29F256G08AUCABH3-10ITZ:A by Micron Technology

MT29F256G08AUCABH3-10ITZ:A

Micron Technology

Micron Technology's MT29F256G08AUCABH3-10ITZ:A is a SLC NAND flash memory with 32K sectors, 8K page size, and 1M sector size. It operates at temperatures from -40 to 85°C and has a max access time of 20 ns. Ideal for industrial applications requiring high-density memory with low standby current.

20 ns

YES

NO

R-PBGA-B100

274877906944 bit

FLASH

32K

100

85 Cel

-40 Cel

PLASTIC/EPOXY

BGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY

8K

PARALLEL

1.8,3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NO

SLC NAND TYPE

MT29F256G08AUCABH3-10Z:A by Micron Technology

MT29F256G08AUCABH3-10Z:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 100; Package Code: BGA; Package Shape: RECTANGULAR; Maximum Standby Current: .00001 Amp;

20 ns

YES

NO

R-PBGA-B100

274877906944 bit

FLASH

32K

100

70 Cel

0 Cel

PLASTIC/EPOXY

BGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY

8K

PARALLEL

1.8,3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

COMMERCIAL

BALL

1 mm

BOTTOM

NO

SLC NAND TYPE

MTFC4GACAANA-4MIT by Micron Technology

MTFC4GACAANA-4MIT

Micron Technology

MTFC4GACAANA-4MIT by Micron Technology is a 3.3V MLC NAND flash memory with 4GX8 organization, operating at up to 52MHz clock frequency. Suitable for industrial applications, it offers a memory density of 34.36 Gb and operates in a parallel mode with a supply voltage range of 2.7V to 3.6V.

52 MHz

R-PBGA-B100

18 mm

34359738368 bit

FLASH CARD

8

1

100

4294967296 words

4G

SYNCHRONOUS

85 Cel

-40 Cel

4GX8

OPEN-DRAIN

PLASTIC/EPOXY

TBGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

3.3

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

MLC NAND TYPE

14 mm

MT29F128G08CECABH1-10Z:A by Micron Technology

MT29F128G08CECABH1-10Z:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 100; Package Code: VBGA; Package Shape: RECTANGULAR; JESD-30 Code: R-PBGA-B100;

R-PBGA-B100

e1

18 mm

137438953472 bit

FLASH

8

1

100

17179869184 words

16G

SYNCHRONOUS

70 Cel

0 Cel

16GX8

PLASTIC/EPOXY

VBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

PARALLEL

2.7

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

MLC NAND TYPE

12 mm

MT29F128G08CECABH1-12:A by Micron Technology

MT29F128G08CECABH1-12:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 100; Package Code: VBGA; Package Shape: RECTANGULAR; JESD-30 Code: R-PBGA-B100;

R-PBGA-B100

e1

18 mm

137438953472 bit

FLASH

8

1

100

17179869184 words

16G

SYNCHRONOUS

70 Cel

0 Cel

16GX8

PLASTIC/EPOXY

VBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

PARALLEL

260

2.7

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

MLC NAND TYPE

12 mm

MT29F128G08CECABH1-12ITZ:A by Micron Technology

MT29F128G08CECABH1-12ITZ:A

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 100; Package Code: VBGA; Package Shape: RECTANGULAR; Type: MLC NAND TYPE;

R-PBGA-B100

e1

18 mm

137438953472 bit

FLASH

8

1

100

17179869184 words

16G

SYNCHRONOUS

85 Cel

-40 Cel

16GX8

PLASTIC/EPOXY

VBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

PARALLEL

2.7

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

MLC NAND TYPE

12 mm

MT29F128G08CECABH1-12Z:A by Micron Technology

MT29F128G08CECABH1-12Z:A

Micron Technology

Micron Technology's MT29F128G08CECABH1-12Z:A is a 16GX8 MLC NAND flash memory with 137.4Gb density and operates at 3.3V. It features synchronous operation, very thin profile grid array package, and commercial temperature grade suitability for various applications requiring high-density storage in compact devices.

R-PBGA-B100

e1

18 mm

137438953472 bit

FLASH

8

1

100

17179869184 words

16G

SYNCHRONOUS

70 Cel

0 Cel

16GX8

PLASTIC/EPOXY

VBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

PARALLEL

2.7

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

MLC NAND TYPE

12 mm

MT29F256G08CKCABH2-10Z:A by Micron Technology

MT29F256G08CKCABH2-10Z:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 100; Package Code: TBGA; Package Shape: RECTANGULAR; Operating Mode: SYNCHRONOUS;

R-PBGA-B100

e1

18 mm

274877906944 bit

FLASH

8

1

100

34359738368 words

32G

SYNCHRONOUS

70 Cel

0 Cel

32GX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

2.7

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

MLC NAND TYPE

12 mm

MT29F256G08CKCABH2-12:A by Micron Technology

MT29F256G08CKCABH2-12:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 100; Package Code: TBGA; Package Shape: RECTANGULAR; Maximum Time At Peak Reflow Temperature (s): 30;

R-PBGA-B100

e1

18 mm

274877906944 bit

FLASH

8

1

100

34359738368 words

32G

SYNCHRONOUS

70 Cel

0 Cel

32GX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

MLC NAND TYPE

12 mm

MT29F256G08CKCABH2-12Z:A by Micron Technology

MT29F256G08CKCABH2-12Z:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 100; Package Code: TBGA; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 2.7 V;

R-PBGA-B100

e1

18 mm

274877906944 bit

FLASH

8

1

100

34359738368 words

32G

SYNCHRONOUS

70 Cel

0 Cel

32GX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

2.7

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

MLC NAND TYPE

12 mm

MT29F256G08CMCABH2-10Z:A by Micron Technology

MT29F256G08CMCABH2-10Z:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 100; Package Code: TBGA; Package Shape: RECTANGULAR; No. of Words Code: 32G;

R-PBGA-B100

e1

18 mm

274877906944 bit

FLASH

8

1

100

34359738368 words

32G

SYNCHRONOUS

70 Cel

0 Cel

32GX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

2.7

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

MLC NAND TYPE

12 mm

MT29F256G08CMCABH2-12:A by Micron Technology

MT29F256G08CMCABH2-12:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 100; Package Code: TBGA; Package Shape: RECTANGULAR; JESD-609 Code: e1;

R-PBGA-B100

e1

18 mm

274877906944 bit

FLASH

8

1

100

34359738368 words

32G

SYNCHRONOUS

70 Cel

0 Cel

32GX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

MLC NAND TYPE

12 mm

MT29F256G08CMCABH2-12ITZ:A by Micron Technology

MT29F256G08CMCABH2-12ITZ:A

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 100; Package Code: TBGA; Package Shape: RECTANGULAR; Minimum Operating Temperature: -40 Cel;

R-PBGA-B100

e1

18 mm

274877906944 bit

FLASH

8

1

100

34359738368 words

32G

SYNCHRONOUS

85 Cel

-40 Cel

32GX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

2.7

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

MLC NAND TYPE

12 mm

MT29F512G08CUCABH3-10:A by Micron Technology

MT29F512G08CUCABH3-10:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 100; Package Code: LBGA; Package Shape: RECTANGULAR; Maximum Time At Peak Reflow Temperature (s): 30;

R-PBGA-B100

e1

18 mm

549755813888 bit

FLASH

8

1

100

68719476736 words

64G

SYNCHRONOUS

70 Cel

0 Cel

64GX8

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

260

2.7

1.4 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

MLC NAND TYPE

12 mm

MT29F512G08CUCABH3-10ITZ:A by Micron Technology

MT29F512G08CUCABH3-10ITZ:A

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 100; Package Code: LBGA; Package Shape: RECTANGULAR; Parallel or Serial: PARALLEL;

R-PBGA-B100

e1

18 mm

549755813888 bit

FLASH

8

1

100

68719476736 words

64G

SYNCHRONOUS

85 Cel

-40 Cel

64GX8

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

2.7

1.4 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

MLC NAND TYPE

12 mm

MT29F512G08CUCABH3-10Z:A by Micron Technology

MT29F512G08CUCABH3-10Z:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 100; Package Code: LBGA; Package Shape: RECTANGULAR; JESD-609 Code: e1;

R-PBGA-B100

e1

18 mm

549755813888 bit

FLASH

8

1

100

68719476736 words

64G

SYNCHRONOUS

70 Cel

0 Cel

64GX8

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

2.7

1.4 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

MLC NAND TYPE

12 mm

MT29F512G08CUCABH3-12:A by Micron Technology

MT29F512G08CUCABH3-12:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 100; Package Code: LBGA; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 3.3;

R-PBGA-B100

e1

18 mm

549755813888 bit

FLASH

8

1

100

68719476736 words

64G

SYNCHRONOUS

70 Cel

0 Cel

64GX8

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

260

2.7

1.4 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

MLC NAND TYPE

12 mm

MT29F512G08CUCABH3-12ITZ:A by Micron Technology

MT29F512G08CUCABH3-12ITZ:A

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 100; Package Code: LBGA; Package Shape: RECTANGULAR; JESD-30 Code: R-PBGA-B100;

R-PBGA-B100

e1

18 mm

549755813888 bit

FLASH

8

1

100

68719476736 words

64G

SYNCHRONOUS

85 Cel

-40 Cel

64GX8

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

2.7

1.4 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

MLC NAND TYPE

12 mm

MT29F64G08CBCABH1-10Z:A by Micron Technology

MT29F64G08CBCABH1-10Z:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 100; Package Code: VBGA; Package Shape: RECTANGULAR; Maximum Operating Temperature: 70 Cel;

R-PBGA-B100

e1

18 mm

68719476736 bit

FLASH

8

1

100

8589934592 words

8G

SYNCHRONOUS

70 Cel

0 Cel

8GX8

PLASTIC/EPOXY

VBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

PARALLEL

2.7

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

MLC NAND TYPE

12 mm

MT29F64G08CBCABH1-12:A by Micron Technology

MT29F64G08CBCABH1-12:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 100; Package Code: VBGA; Package Shape: RECTANGULAR; No. of Words: 8589934592 words;

R-PBGA-B100

e1

18 mm

68719476736 bit

FLASH

8

1

100

8589934592 words

8G

SYNCHRONOUS

70 Cel

0 Cel

8GX8

PLASTIC/EPOXY

VBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

PARALLEL

260

2.7

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

MLC NAND TYPE

12 mm

MT29F64G08CBCABH1-12ITZ:A by Micron Technology

MT29F64G08CBCABH1-12ITZ:A

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 100; Package Code: VBGA; Package Shape: RECTANGULAR; Technology: CMOS;

R-PBGA-B100

e1

18 mm

68719476736 bit

FLASH

8

1

100

8589934592 words

8G

SYNCHRONOUS

85 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

VBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

PARALLEL

2.7

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

MLC NAND TYPE

12 mm

MT29F64G08CBCABH1-12Z:A by Micron Technology

MT29F64G08CBCABH1-12Z:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 100; Package Code: VBGA; Package Shape: RECTANGULAR; Organization: 8GX8;

R-PBGA-B100

e1

18 mm

68719476736 bit

FLASH

8

1

100

8589934592 words

8G

SYNCHRONOUS

70 Cel

0 Cel

8GX8

PLASTIC/EPOXY

VBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

PARALLEL

2.7

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

MLC NAND TYPE

12 mm

MT29F128G08AUCBBH3-12:B by Micron Technology

MT29F128G08AUCBBH3-12:B

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 100; Package Code: LBGA; Package Shape: RECTANGULAR; Package Style (Meter): GRID ARRAY, LOW PROFILE;

R-PBGA-B100

e1

18 mm

137438953472 bit

FLASH

8

1

100

17179869184 words

16G

SYNCHRONOUS

70 Cel

0 Cel

16GX8

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

260

2.7

1.4 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

MLC NAND TYPE

12 mm

MT29F128G08AUCBBH3-12IT:B by Micron Technology

MT29F128G08AUCBBH3-12IT:B

Micron Technology

MT29F128G08AUCBBH3-12IT:B by Micron Technology is a 16GX8 MLC NAND flash memory with 137.4Gb density, operating at 3.3V. It features synchronous mode, industrial temperature grade, and parallel interface. Ideal for applications requiring high-speed data storage in compact devices.

R-PBGA-B100

e1

18 mm

137438953472 bit

FLASH

8

1

100

17179869184 words

16G

SYNCHRONOUS

85 Cel

-40 Cel

16GX8

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

260

2.7

1.4 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

MLC NAND TYPE

12 mm

MT29F16G08ABCBBH1-12:B by Micron Technology

MT29F16G08ABCBBH1-12:B

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 100; Package Code: VBGA; Package Shape: RECTANGULAR; Maximum Supply Current: 50 mA;

20 ns

YES

NO

R-PBGA-B100

e1

18 mm

17179869184 bit

FLASH

8

1

4K

100

2147483648 words

2G

SYNCHRONOUS

70 Cel

0 Cel

2GX8

PLASTIC/EPOXY

VBGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

4K

PARALLEL

1.8,3/3.3

2.7

Not Qualified

YES

1 mm

512K

.00005 Amp

Flash Memories

50 mA

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

NO

SLC NAND TYPE

12 mm

MT29F16G08ABCBBH1-12IT:B by Micron Technology

MT29F16G08ABCBBH1-12IT:B

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 100; Package Code: VBGA; Package Shape: RECTANGULAR; Parallel or Serial: PARALLEL;

20 ns

YES

NO

R-PBGA-B100

e1

18 mm

17179869184 bit

FLASH

8

1

4K

100

2147483648 words

2G

SYNCHRONOUS

85 Cel

-40 Cel

2GX8

PLASTIC/EPOXY

VBGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

4K

PARALLEL

1.8,3/3.3

2.7

Not Qualified

YES

1 mm

512K

.00005 Amp

Flash Memories

50 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

NO

SLC NAND TYPE

12 mm

MT29F32G08AECBBH1-12:B by Micron Technology

MT29F32G08AECBBH1-12:B

Micron Technology

Micron Technology's MT29F32G08AECBBH1-12:B is a 3.3V SLC NAND Flash Memory with 4GX8 organization, 34359738368-bit memory density, and operates in commercial temperature grade. It features a parallel interface, 100 terminals in a grid array package style measuring 12mm x 18mm x 1mm. Ideal for applications requiring high-speed synchronous operation and reliable data storage.

R-PBGA-B100

e1

18 mm

34359738368 bit

FLASH

8

1

100

4294967296 words

4G

SYNCHRONOUS

70 Cel

0 Cel

4GX8

PLASTIC/EPOXY

VBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

PARALLEL

260

2.7

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

SLC NAND TYPE

12 mm

MT29F32G08AECBBH1-12IT:B by Micron Technology

MT29F32G08AECBBH1-12IT:B

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 100; Package Code: VBGA; Package Shape: RECTANGULAR; Programming Voltage (V): 2.7;

R-PBGA-B100

e1

18 mm

34359738368 bit

FLASH

8

3

1

100

4294967296 words

4G

SYNCHRONOUS

85 Cel

-40 Cel

4GX8

PLASTIC/EPOXY

VBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

PARALLEL

260

2.7

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

SLC NAND TYPE

12 mm

MT29F64G08AKCBBH2-12:B by Micron Technology

MT29F64G08AKCBBH2-12:B

Micron Technology

MT29F64G08AKCBBH2-12:B by Micron Technology is a 3.3V SLC NAND flash memory with 8GX8 organization, operating at 0-70 °C. It features a thin profile grid array package, 100 terminals, and parallel interface. Ideal for commercial applications requiring high-speed synchronous operation and reliable data storage in compact devices.

R-PBGA-B100

e1

18 mm

68719476736 bit

FLASH

8

1

100

8589934592 words

8G

SYNCHRONOUS

70 Cel

0 Cel

8GX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

SLC NAND TYPE

12 mm