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COMMERCIAL DRAM 566

DRAM
Part# Info Specs
Part RoHS Manufacturer Description Access Mode Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type Interleaved Burst Length JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Sequential Burst Length Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Width
MT8HTF6464HDY-667B3 by Micron Technology

MT8HTF6464HDY-667B3

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 200; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

.45 ns

333 MHz

COMMON

R-PDMA-N200

4294967296 bit

DDR DRAM MODULE

64

200

67108864 words

64M

65 Cel

0 Cel

64MX64

3-STATE

PLASTIC/EPOXY

DIMM

DIMM200,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.8

Not Qualified

8192

.04 Amp

DRAMs

1760 mA

1.8

NO

CMOS

COMMERCIAL

NO LEAD

.6 mm

DUAL

MT18VDVF12872DY-335F1 by Micron Technology

MT18VDVF12872DY-335F1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 184; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

DUAL BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

166 MHz

COMMON

R-XDMA-N184

e4

9663676416 bit

DDR DRAM MODULE

72

1

1

184

134217728 words

128M

SYNCHRONOUS

70 Cel

0 Cel

128MX72

3-STATE

UNSPECIFIED

DIMM

DIMM184

RECTANGULAR

MICROELECTRONIC ASSEMBLY

2.5

Not Qualified

8192

YES

DRAMs

5220 mA

2.7 V

2.3 V

2.5

NO

CMOS

COMMERCIAL

GOLD

NO LEAD

1.27 mm

DUAL

MT48H32M16LFBF-6:B by Micron Technology

MT48H32M16LFBF-6:B

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

166 MHz

COMMON

1,2,4,8

R-PBGA-B54

e1

9 mm

536870912 bit

SYNCHRONOUS DRAM

16

1

1

54

33554432 words

32M

SYNCHRONOUS

70 Cel

0 Cel

32MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA54,9X9,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

1 mm

YES

1,2,4,8,FP

.00001 Amp

DRAMs

100 mA

1.95 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT18HTF25672AZ-667H1 by Micron Technology

MT18HTF25672AZ-667H1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

DUAL BANK PAGE BURST

.45 ns

AUTO/SELF REFRESH

333 MHz

COMMON

R-XDMA-N240

133.35 mm

19327352832 bit

DDR DRAM MODULE

72

1

1

240

268435456 words

256M

SYNCHRONOUS

70 Cel

0 Cel

256MX72

3-STATE

UNSPECIFIED

DIMM

DIMM240,40

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.8

Not Qualified

8192

30.5 mm

YES

.126 Amp

Other Memory ICs

1728 mA

1.9 V

1.7 V

1.8

NO

CMOS

COMMERCIAL

NO LEAD

1 mm

DUAL

30 mm

MT16LSDF6464HY-133D2 by Micron Technology

MT16LSDF6464HY-133D2

Micron Technology

SYNCHRONOUS DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 144; Package Code: DIMM; Package Shape: RECTANGULAR; Package Style (Meter): MICROELECTRONIC ASSEMBLY;

DUAL BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

R-XZMA-N144

e4

67.585 mm

4294967296 bit

SYNCHRONOUS DRAM MODULE

64

1

1

144

67108864 words

64M

SYNCHRONOUS

65 Cel

0 Cel

64MX64

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

Not Qualified

3.8 mm

YES

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

GOLD

NO LEAD

ZIG-ZAG

31.75 mm

MT18VDVF12872Y-40BD4 by Micron Technology

MT18VDVF12872Y-40BD4

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 184; Package Code: DIMM; Package Shape: RECTANGULAR; Memory Density: 9663676416 bit;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH

R-XDMA-N184

e4

133.35 mm

9663676416 bit

DDR DRAM MODULE

72

1

1

184

134217728 words

128M

SYNCHRONOUS

70 Cel

0 Cel

128MX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

Not Qualified

4 mm

YES

2.7 V

2.5 V

2.6

NO

CMOS

COMMERCIAL

GOLD

NO LEAD

DUAL

18.29 mm

MT16JTF25664AY-1G4D1 by Micron Technology

MT16JTF25664AY-1G4D1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

667 MHz

COMMON

R-PDMA-N240

17179869184 bit

DDR DRAM MODULE

64

240

268435456 words

256M

70 Cel

0 Cel

256MX64

3-STATE

PLASTIC/EPOXY

DIMM

DIMM240,40

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.5,3.3

Not Qualified

8192

.16 Amp

DRAMs

4640 mA

NO

CMOS

COMMERCIAL

NO LEAD

1 mm

DUAL

MT8JSF12864HY-1G4D1 by Micron Technology

MT8JSF12864HY-1G4D1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 204; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

667 MHz

COMMON

R-PDMA-N204

8589934592 bit

DDR DRAM MODULE

64

204

134217728 words

128M

70 Cel

0 Cel

128MX64

3-STATE

PLASTIC/EPOXY

DIMM

DIMM204,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.5,3.3

Not Qualified

8192

.08 Amp

DRAMs

3920 mA

NO

CMOS

COMMERCIAL

NO LEAD

.6 mm

DUAL

MT16JSF25664HY-1G4D1 by Micron Technology

MT16JSF25664HY-1G4D1

Micron Technology

Micron Technology's MT16JSF25664HY-1G4D1 is a 256MX64 DDR DRAM MODULE with 17179869184-bit memory density. Operating at 1.5V, it features synchronous mode and self-refresh capability. Ideal for commercial applications, this rectangular package offers dual bank page burst access mode and CMOS technology.

DUAL BANK PAGE BURST

AUTO/SELF REFRESH

R-XZMA-N204

e4

17179869184 bit

DDR DRAM MODULE

64

1

1

204

268435456 words

256M

SYNCHRONOUS

70 Cel

0 Cel

256MX64

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

260

Not Qualified

YES

1.575 V

1.425 V

1.5

NO

CMOS

COMMERCIAL

Gold (Au)

NO LEAD

ZIG-ZAG

30

MT4HTF6464AY-667E1 by Micron Technology

MT4HTF6464AY-667E1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

.45 ns

333 MHz

COMMON

R-PDMA-N240

4294967296 bit

DDR DRAM MODULE

64

240

67108864 words

64M

70 Cel

0 Cel

64MX64

3-STATE

PLASTIC/EPOXY

DIMM

DIMM240,40

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.8

Not Qualified

8192

.028 Amp

DRAMs

1400 mA

1.8

NO

CMOS

COMMERCIAL

NO LEAD

1 mm

DUAL

MT16HTF25664AY-667E1 by Micron Technology

MT16HTF25664AY-667E1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Package Shape: RECTANGULAR; Terminal Position: DUAL;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH

R-XDMA-N240

e4

133.35 mm

17179869184 bit

DDR DRAM MODULE

64

1

1

240

268435456 words

256M

SYNCHRONOUS

70 Cel

0 Cel

256MX64

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

Not Qualified

4 mm

YES

1.9 V

1.7 V

1.8

NO

CMOS

COMMERCIAL

GOLD

NO LEAD

DUAL

30.175 mm

MT8HTF12864HDY-667E1 by Micron Technology

MT8HTF12864HDY-667E1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 200; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

.45 ns

333 MHz

COMMON

R-PDMA-N200

8589934592 bit

DDR DRAM MODULE

64

200

134217728 words

128M

70 Cel

0 Cel

128MX64

3-STATE

PLASTIC/EPOXY

DIMM

DIMM200,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.8

Not Qualified

8192

.056 Amp

DRAMs

2160 mA

1.8

NO

CMOS

COMMERCIAL

NO LEAD

.6 mm

DUAL

MT4HTF6464HY-667E1 by Micron Technology

MT4HTF6464HY-667E1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 200; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

.45 ns

333 MHz

COMMON

R-PDMA-N200

4294967296 bit

DDR DRAM MODULE

64

200

67108864 words

64M

70 Cel

0 Cel

64MX64

3-STATE

PLASTIC/EPOXY

DIMM

DIMM200,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.8

Not Qualified

8192

.028 Amp

DRAMs

1400 mA

1.8

NO

CMOS

COMMERCIAL

NO LEAD

.6 mm

DUAL

MT18HTF6472Y-40EB2 by Micron Technology

MT18HTF6472Y-40EB2

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

.6 ns

200 MHz

COMMON

R-PDMA-N240

4831838208 bit

DDR DRAM MODULE

72

240

67108864 words

64M

70 Cel

0 Cel

64MX72

3-STATE

PLASTIC/EPOXY

DIMM

DIMM240,40

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.8

Not Qualified

8192

.09 Amp

DRAMs

4140 mA

1.8

NO

CMOS

COMMERCIAL

NO LEAD

1 mm

DUAL

MT46V32M16P-5B:FTR by Micron Technology

MT46V32M16P-5B:FTR

Micron Technology

MT46V32M16P-5B:FTR by Micron Technology is a DDR1 DRAM with 32MX16 organization and 33554432 words. It operates synchronously, has self-refresh capability, and a max access time of 0.7 ns. It is commonly used in applications requiring high-speed memory such as computers and servers.

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

R-PDSO-G66

e3

22.22 mm

536870912 bit

DDR1 DRAM

16

1

1

66

33554432 words

32M

SYNCHRONOUS

70 Cel

0 Cel

32MX16

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

260

Not Qualified

1.2 mm

YES

2.7 V

2.5 V

2.6

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

GULL WING

.65 mm

DUAL

30

10.16 mm

MT46V32M16P-6T:FTR by Micron Technology

MT46V32M16P-6T:FTR

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 66; Package Code: TSSOP; Package Shape: RECTANGULAR; Length: 22.22 mm;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

R-PDSO-G66

e3

22.22 mm

536870912 bit

DDR1 DRAM

16

3

1

1

66

33554432 words

32M

SYNCHRONOUS

70 Cel

0 Cel

32MX16

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

260

Not Qualified

1.2 mm

YES

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

GULL WING

.65 mm

DUAL

30

10.16 mm

MT46V32M16TG-6T:FTR by Micron Technology

MT46V32M16TG-6T:FTR

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 66; Package Code: TSSOP; Package Shape: RECTANGULAR; No. of Functions: 1;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

R-PDSO-G66

e0

22.22 mm

536870912 bit

DDR1 DRAM

16

1

1

66

33554432 words

32M

SYNCHRONOUS

70 Cel

0 Cel

32MX16

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Not Qualified

1.2 mm

YES

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.65 mm

DUAL

10.16 mm

MT46V32M8P-6T:GTR by Micron Technology

MT46V32M8P-6T:GTR

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 66; Package Code: TSSOP; Package Shape: RECTANGULAR; Minimum Operating Temperature: 0 Cel;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

R-PDSO-G66

e3

22.22 mm

268435456 bit

DDR1 DRAM

8

3

1

1

66

33554432 words

32M

SYNCHRONOUS

70 Cel

0 Cel

32MX8

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

260

Not Qualified

1.2 mm

YES

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.65 mm

DUAL

30

10.16 mm

MT46V64M8P-6T:DTR by Micron Technology

MT46V64M8P-6T:DTR

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 66; Package Code: TSSOP; Package Shape: RECTANGULAR; Qualification: Not Qualified;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

R-PDSO-G66

e3

22.22 mm

536870912 bit

DDR1 DRAM

8

3

1

1

66

67108864 words

64M

SYNCHRONOUS

70 Cel

0 Cel

64MX8

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

260

Not Qualified

1.2 mm

YES

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

GULL WING

.65 mm

DUAL

30

10.16 mm

MT46V64M8P-6T:FTR by Micron Technology

MT46V64M8P-6T:FTR

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 66; Package Code: TSSOP; Package Shape: RECTANGULAR; Technology: CMOS;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

R-PDSO-G66

e3

22.22 mm

536870912 bit

DDR1 DRAM

8

3

1

1

66

67108864 words

64M

SYNCHRONOUS

70 Cel

0 Cel

64MX8

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

260

Not Qualified

1.2 mm

YES

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

GULL WING

.65 mm

DUAL

30

10.16 mm

MT48LC16M16A2TG-7E:DTR by Micron Technology

MT48LC16M16A2TG-7E:DTR

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: TSOP2; Package Shape: RECTANGULAR; Maximum Access Time: 5.4 ns;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

R-PDSO-G54

e0

22.22 mm

268435456 bit

SYNCHRONOUS DRAM

16

1

1

54

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX16

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

Not Qualified

1.2 mm

YES

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

DUAL

10.16 mm

MT48LC16M8A2TG-75:GTR by Micron Technology

MT48LC16M8A2TG-75:GTR

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: TSOP2; Package Shape: RECTANGULAR; Terminal Form: GULL WING;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

R-PDSO-G54

e0

22.22 mm

134217728 bit

SYNCHRONOUS DRAM

8

1

1

54

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX8

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

Not Qualified

1.2 mm

YES

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

DUAL

10.16 mm

MT48LC2M32B2TG-6:GTR by Micron Technology

MT48LC2M32B2TG-6:GTR

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 86; Package Code: TSSOP; Package Shape: RECTANGULAR; Minimum Operating Temperature: 0 Cel;

FOUR BANK PAGE BURST

5.5 ns

AUTO/SELF REFRESH

R-PDSO-G86

e0

22.22 mm

67108864 bit

SYNCHRONOUS DRAM

32

1

1

86

2097152 words

2M

SYNCHRONOUS

70 Cel

0 Cel

2MX32

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

235

Not Qualified

1.2 mm

YES

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Tin/Lead (Sn/Pb)

GULL WING

.5 mm

DUAL

30

10.16 mm

MT48LC4M16A2TG-75:GTR by Micron Technology

MT48LC4M16A2TG-75:GTR

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: TSOP2; Package Shape: RECTANGULAR; Access Mode: FOUR BANK PAGE BURST;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

R-PDSO-G54

e0

22.22 mm

67108864 bit

SYNCHRONOUS DRAM

16

1

1

54

4194304 words

4M

SYNCHRONOUS

70 Cel

0 Cel

4MX16

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

235

Not Qualified

1.2 mm

YES

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Tin/Lead (Sn/Pb)

GULL WING

.8 mm

DUAL

30

10.16 mm

MT48LC4M16A2TG-7E:GTR by Micron Technology

MT48LC4M16A2TG-7E:GTR

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: TSOP2; Package Shape: RECTANGULAR; Memory Density: 67108864 bit;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

R-PDSO-G54

e0

22.22 mm

67108864 bit

SYNCHRONOUS DRAM

16

1

1

54

4194304 words

4M

SYNCHRONOUS

70 Cel

0 Cel

4MX16

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

Not Qualified

1.2 mm

YES

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

DUAL

10.16 mm

MT48LC4M32B2TG-7:GTR by Micron Technology

MT48LC4M32B2TG-7:GTR

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 86; Package Code: TSOP2; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 3 V;

FOUR BANK PAGE BURST

5.5 ns

AUTO/SELF REFRESH

R-PDSO-G86

e0

22.22 mm

134217728 bit

SYNCHRONOUS DRAM

32

1

1

86

4194304 words

4M

SYNCHRONOUS

70 Cel

0 Cel

4MX32

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

Not Qualified

1.2 mm

YES

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

DUAL

10.16 mm

MT48LC8M16A2TG-75:GTR by Micron Technology

MT48LC8M16A2TG-75:GTR

Micron Technology

Micron Technology's MT48LC8M16A2TG-75:GTR is a 3.3V, 8MX16 Synchronous DRAM with 70°C max temp. Features include self-refresh, 5.4ns access time, and 8388608 words capacity. Ideal for commercial applications requiring fast memory access in compact form factor.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

R-PDSO-G54

e0

22.22 mm

134217728 bit

SYNCHRONOUS DRAM

16

1

1

54

8388608 words

8M

SYNCHRONOUS

70 Cel

0 Cel

8MX16

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

Not Qualified

1.2 mm

YES

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

DUAL

10.16 mm

MT48LC8M16A2TG-7E:GTR by Micron Technology

MT48LC8M16A2TG-7E:GTR

Micron Technology

Micron Technology's MT48LC8M16A2TG-7E:GTR is a 3.3V Synchronous DRAM with 8MX16 organization, offering 8388608 words and 134217728-bit memory density. Operating at a max temperature of 70°C, it features self-refresh mode and four-bank page burst access for commercial applications.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

R-PDSO-G54

e0

22.22 mm

134217728 bit

SYNCHRONOUS DRAM

16

1

1

54

8388608 words

8M

SYNCHRONOUS

70 Cel

0 Cel

8MX16

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

Not Qualified

1.2 mm

YES

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

DUAL

10.16 mm

MT48LC8M8A2TG-75:GTR by Micron Technology

MT48LC8M8A2TG-75:GTR

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: TSOP2; Package Shape: RECTANGULAR; No. of Words: 8388608 words;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

R-PDSO-G54

e0

22.22 mm

67108864 bit

SYNCHRONOUS DRAM

8

1

1

54

8388608 words

8M

SYNCHRONOUS

70 Cel

0 Cel

8MX8

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

Not Qualified

1.2 mm

YES

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

DUAL

10.16 mm

IS42S16160J-6BL by Integrated Silicon Solution

IS42S16160J-6BL

Integrated Silicon Solution

IS42S16160J-6BL by Integrated Silicon Solution is a 16MX16 Synchronous DRAM with 16777216 words, 268435456 bit memory density, and 5.4 ns max access time. It operates at 3.3V and is ideal for commercial applications requiring fast and reliable memory performance in a compact GRID ARRAY package style.

FOUR BANK PAGE BURST

5.4 ns

PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH

S-PBGA-B54

e1

8 mm

268435456 bit

SYNCHRONOUS DRAM

16

1

1

54

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX16

PLASTIC/EPOXY

TFBGA

SQUARE

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.2 mm

YES

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

IS42S16160J-7BL by Integrated Silicon Solution

IS42S16160J-7BL

Integrated Silicon Solution

IS42S16160J-7BL by Integrated Silicon Solution is a 16MX16 Synchronous DRAM with 268Mbit memory density. It operates at 3.3V, has a peak reflow temp of 260°C, and offers fast access time of 5.4ns. Ideal for commercial applications requiring high-speed memory in compact form factors.

FOUR BANK PAGE BURST

5.4 ns

PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH

S-PBGA-B54

e1

8 mm

268435456 bit

SYNCHRONOUS DRAM

16

1

1

54

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX16

PLASTIC/EPOXY

TFBGA

SQUARE

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.2 mm

YES

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

IS42S32800J-7BL by Integrated Silicon Solution

IS42S32800J-7BL

Integrated Silicon Solution

IS42S32800J-7BL by Integrated Silicon Solution is an 8MX32 Synchronous DRAM with 143 MHz clock frequency. Featuring a 268MB memory density, it operates at 3.3V and offers a max access time of 5.4 ns. Ideal for applications requiring high-speed data processing in commercial temperature environments.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

143 MHz

COMMON

1,2,4,8

R-PBGA-B90

e1

13 mm

268435456 bit

SYNCHRONOUS DRAM

32

3

1

1

90

8388608 words

8M

SYNCHRONOUS

70 Cel

0 Cel

8MX32

3-STATE

PLASTIC/EPOXY

TFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

4096

1.2 mm

YES

1,2,4,8,FP

.004 Amp

170 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

10

8 mm

IS42S32800J-7TL by Integrated Silicon Solution

IS42S32800J-7TL

Integrated Silicon Solution

IS42S32800J-7TL by Integrated Silicon Solution is an 8MX32 Synchronous DRAM with 3.3V supply voltage, operating at 143MHz clock frequency. Ideal for commercial applications requiring fast access time of 5.4ns and a memory density of 268MB.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

143 MHz

COMMON

1,2,4,8

R-PDSO-G86

e3

22.22 mm

268435456 bit

SYNCHRONOUS DRAM

32

3

1

1

86

8388608 words

8M

SYNCHRONOUS

70 Cel

0 Cel

8MX32

3-STATE

PLASTIC/EPOXY

TSOP2

TSSOP86,.46,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

260

4096

1.2 mm

YES

1,2,4,8,FP

.004 Amp

170 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Tin (Sn)

GULL WING

.5 mm

DUAL

10

10.16 mm

MT16HTF25664AZ-800M1 by Micron Technology

MT16HTF25664AZ-800M1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Package Shape: RECTANGULAR; Package Style (Meter): MICROELECTRONIC ASSEMBLY;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XDMA-N240

133.35 mm

17179869184 bit

DDR DRAM MODULE

64

1

1

240

268435456 words

256M

SYNCHRONOUS

70 Cel

0 Cel

256MX64

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.5 mm

YES

1.9 V

1.7 V

1.8

NO

CMOS

COMMERCIAL

NO LEAD

1 mm

DUAL

4 mm

MT18HTF25672AZ-80EM1 by Micron Technology

MT18HTF25672AZ-80EM1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Package Shape: RECTANGULAR; Maximum Supply Voltage (Vsup): 1.9 V;

DUAL BANK PAGE BURST

PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH; WD-MAX

R-XDMA-N240

133.35 mm

19327352832 bit

DDR DRAM MODULE

72

1

1

240

268435456 words

256M

SYNCHRONOUS

70 Cel

0 Cel

256MX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.5 mm

YES

1.9 V

1.7 V

1.8

NO

CMOS

COMMERCIAL

NO LEAD

1 mm

DUAL

4 mm

MT18HTS25672RHZ-80EM1 by Micron Technology

MT18HTS25672RHZ-80EM1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 200; Package Code: DIMM; Package Shape: RECTANGULAR; No. of Words Code: 256M;

DUAL BANK PAGE BURST

PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH; WD-MAX

R-XZMA-N200

67.6 mm

19327352832 bit

DDR DRAM MODULE

72

1

1

200

268435456 words

256M

SYNCHRONOUS

70 Cel

0 Cel

256MX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.15 mm

YES

1.9 V

1.7 V

1.8

NO

CMOS

COMMERCIAL

NO LEAD

ZIG-ZAG

3.8 mm

MT36HTF51272PZ-80EM1 by Micron Technology

MT36HTF51272PZ-80EM1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Package Shape: RECTANGULAR; No. of Functions: 1;

DUAL BANK PAGE BURST

PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH; WD-MAX

R-XDMA-N240

133.35 mm

38654705664 bit

DDR DRAM MODULE

72

1

1

240

536870912 words

512M

SYNCHRONOUS

70 Cel

0 Cel

512MX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.5 mm

YES

1.9 V

1.7 V

1.8

NO

CMOS

COMMERCIAL

NO LEAD

1 mm

DUAL

4 mm

MT8HTF12864AZ-800M1 by Micron Technology

MT8HTF12864AZ-800M1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Package Shape: RECTANGULAR; Additional Features: SELF REFRESH; WD-MAX;

SINGLE BANK PAGE BURST

SELF REFRESH; WD-MAX

R-XDMA-N240

133.35 mm

8589934592 bit

DDR DRAM MODULE

64

1

1

240

134217728 words

128M

SYNCHRONOUS

70 Cel

0 Cel

128MX64

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.5 mm

YES

1.9 V

1.7 V

1.8

NO

CMOS

COMMERCIAL

NO LEAD

DUAL

2.7 mm

MT8HTF12864HDZ-800M1 by Micron Technology

MT8HTF12864HDZ-800M1

Micron Technology

Micron Technology's MT8HTF12864HDZ-800M1 is a 128MX64 DDR DRAM MODULE with 8589934592 bit memory density. It operates synchronously at 1.8V, featuring dual bank page burst access mode. Ideal for commercial applications, this rectangular microelectronic assembly has a max temperature of 70°C.

DUAL BANK PAGE BURST

PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH; WD-MAX

R-XDMA-N200

67.6 mm

8589934592 bit

DDR DRAM MODULE

64

1

1

200

134217728 words

128M

SYNCHRONOUS

70 Cel

0 Cel

128MX64

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.15 mm

YES

1.9 V

1.7 V

1.8

NO

CMOS

COMMERCIAL

NO LEAD

DUAL

3.8 mm

MT9HTF12872AZ-80EM1 by Micron Technology

MT9HTF12872AZ-80EM1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Shape: RECTANGULAR; Memory Width: 72; Technology: CMOS;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XDMA-N240

133.35 mm

9663676416 bit

DDR DRAM MODULE

72

1

1

240

134217728 words

128M

SYNCHRONOUS

70 Cel

0 Cel

128MX72

UNSPECIFIED

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.5 mm

YES

1.9 V

1.7 V

1.8

NO

CMOS

COMMERCIAL

NO LEAD

DUAL

2.7 mm

MT9HTF12872PZ-80EM1 by Micron Technology

MT9HTF12872PZ-80EM1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Package Shape: RECTANGULAR; Self Refresh: YES;

SINGLE BANK PAGE BURST

PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH; WD-MAX

R-XDMA-N240

133.35 mm

9663676416 bit

DDR DRAM MODULE

72

1

1

240

134217728 words

128M

SYNCHRONOUS

70 Cel

0 Cel

128MX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

260

30.5 mm

YES

1.9 V

1.7 V

1.8

NO

CMOS

COMMERCIAL

NO LEAD

1 mm

DUAL

30

2.7 mm

MT9HTF12872RHZ-80EM1 by Micron Technology

MT9HTF12872RHZ-80EM1

Micron Technology

Micron Technology's MT9HTF12872RHZ-80EM1 is a 128MX72 DDR DRAM MODULE with 9663676416 bit memory density. Operating at 1.8V, it features SYNCHRONOUS mode and SELF REFRESH capability. Ideal for commercial applications, this MICROELECTRONIC ASSEMBLY has a temperature range of 0-70 °C.

SINGLE BANK PAGE BURST

PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH; WD-MAX

R-XZMA-N200

67.6 mm

9663676416 bit

DDR DRAM MODULE

72

1

1

200

134217728 words

128M

SYNCHRONOUS

70 Cel

0 Cel

128MX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.15 mm

YES

1.9 V

1.7 V

1.8

NO

CMOS

COMMERCIAL

NO LEAD

ZIG-ZAG

3.8 mm

MT18HVF25672PDZ-667H1 by Micron Technology

MT18HVF25672PDZ-667H1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Package Shape: RECTANGULAR; Memory Density: 19327352832 bit;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH

R-XDMA-N240

e4

133.35 mm

19327352832 bit

DDR DRAM MODULE

72

1

1

240

268435456 words

256M

SYNCHRONOUS

70 Cel

0 Cel

256MX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

Not Qualified

4 mm

YES

1.9 V

1.7 V

1.8

NO

CMOS

COMMERCIAL

GOLD

NO LEAD

DUAL

17.9 mm

MT49H16M36BM-25:A by Micron Technology

MT49H16M36BM-25:A

Micron Technology

DDR DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Maximum Operating Temperature: 70 Cel;

MULTI BANK PAGE BURST

20 ns

AUTO REFRESH

400 MHz

COMMON

R-PBGA-B144

e1

18.5 mm

603979776 bit

DDR DRAM

36

1

1

144

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX36

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.5/1.8,1.8,2.5

Not Qualified

1.2 mm

2,4,8

.048 Amp

DRAMs

1100 mA

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

11 mm

MT9VDDT6472HIY-335F2 by Micron Technology

MT9VDDT6472HIY-335F2

Micron Technology

Micron Technology's MT9VDDT6472HIY-335F2 is a 64MX72 DDR DRAM MODULE with 4831838208-bit memory density. Operating at 2.5V, it features synchronous mode and self-refresh capability. Ideal for commercial applications requiring high-speed single bank page burst access.

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH

R-XZMA-N200

e4

67.6 mm

4831838208 bit

DDR DRAM MODULE

72

1

1

200

67108864 words

64M

SYNCHRONOUS

70 Cel

0 Cel

64MX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

Not Qualified

3.8 mm

YES

2.7 V

2.3 V

2.5

NO

CMOS

COMMERCIAL

GOLD

NO LEAD

ZIG-ZAG

31.75 mm

MT18HTF25672PDZ-667H1 by Micron Technology

MT18HTF25672PDZ-667H1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

DUAL BANK PAGE BURST

.45 ns

SELF CONTAINED REFRESH; WD-MAX

333 MHz

COMMON

R-XDMA-N240

e4

133.35 mm

19327352832 bit

DDR DRAM MODULE

72

1

1

240

268435456 words

256M

SYNCHRONOUS

70 Cel

0 Cel

256MX72

3-STATE

UNSPECIFIED

DIMM

DIMM240,40

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.8

Not Qualified

8192

30.5 mm

YES

.126 Amp

DRAMs

1728 mA

1.9 V

1.7 V

1.8

NO

CMOS

COMMERCIAL

GOLD

NO LEAD

1 mm

DUAL

4 mm

MT4JSF12864HZ-1G4D1 by Micron Technology

MT4JSF12864HZ-1G4D1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 204; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

SINGLE BANK PAGE BURST

.255 ns

WD-MAX

667 MHz

COMMON

R-XDMA-N204

67.6 mm

8589934592 bit

DDR DRAM MODULE

64

1

1

204

134217728 words

128M

SYNCHRONOUS

70 Cel

0 Cel

128MX64

3-STATE

UNSPECIFIED

DIMM

DIMM204,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

NOT SPECIFIED

1.5

Not Qualified

8192

30.15 mm

.048 Amp

DRAMs

1700 mA

1.45 V

1.283 V

1.35

NO

CMOS

COMMERCIAL

NO LEAD

.6 mm

DUAL

NOT SPECIFIED

2.45 mm

MT4JTF12864AZ-1G4D1 by Micron Technology

MT4JTF12864AZ-1G4D1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

SINGLE BANK PAGE BURST

WD-MAX

667 MHz

COMMON

R-XDMA-N240

e4

133.35 mm

8589934592 bit

DDR DRAM MODULE

64

1

1

240

134217728 words

128M

SYNCHRONOUS

70 Cel

0 Cel

128MX64

3-STATE

UNSPECIFIED

DIMM

DIMM240,40

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.5,3.3

Not Qualified

8192

30.5 mm

.048 Amp

DRAMs

1780 mA

1.575 V

1.425 V

1.5

NO

CMOS

COMMERCIAL

Gold (Au)

NO LEAD

1 mm

DUAL

2.7 mm