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COMMERCIAL DRAM 566

DRAM
Part# Info Specs
Part RoHS Manufacturer Description Access Mode Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type Interleaved Burst Length JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Sequential Burst Length Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Width
MT48LC16M8A2P-7E:L by Micron Technology

MT48LC16M8A2P-7E:L

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: TSOP2; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

143 MHz

COMMON

1,2,4,8

R-PDSO-G54

e3

22.22 mm

134217728 bit

SYNCHRONOUS DRAM

8

1

1

54

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX8

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP54,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

260

3.3

Not Qualified

4096

1.2 mm

YES

1,2,4,8,FP

.002 Amp

DRAMs

330 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN

GULL WING

.8 mm

DUAL

30

10.16 mm

MT48LC8M16A2B4-6A:L by Micron Technology

MT48LC8M16A2B4-6A:L

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: VFBGA; Refresh Cycles: 4096; Package Shape: SQUARE;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

167 MHz

COMMON

1,2,4,8

S-PBGA-B54

e1

8 mm

134217728 bit

SYNCHRONOUS DRAM

16

1

1

54

8388608 words

8M

SYNCHRONOUS

70 Cel

0 Cel

8MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA54,9X9,32

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

3.3

Not Qualified

4096

1 mm

YES

1,2,4,8,FP

.002 Amp

DRAMs

330 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT36KDZS2G72PDZ-1G4E1 by Micron Technology

MT36KDZS2G72PDZ-1G4E1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Package Shape: RECTANGULAR; No. of Functions: 1;

FOUR BANK PAGE BURST

AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V SUPPLY; WD-MAX

R-XDMA-N240

133.35 mm

154618822656 bit

DDR DRAM MODULE

72

1

1

240

2147483648 words

2G

SYNCHRONOUS

70 Cel

0 Cel

2GX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

18.9 mm

YES

1.45 V

1.283 V

1.35

NO

CMOS

COMMERCIAL

NO LEAD

1 mm

DUAL

4 mm

MT8JTF51264HZ-1G6E1 by Micron Technology

MT8JTF51264HZ-1G6E1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 204; Package Code: DIMM; Package Shape: RECTANGULAR; Organization: 512MX64;

SINGLE BANK PAGE BURST

SELF REFRESH; WD-MAX

R-XZMA-N204

67.6 mm

34359738368 bit

DDR DRAM MODULE

64

1

1

204

536870912 words

512M

SYNCHRONOUS

70 Cel

0 Cel

512MX64

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.15 mm

YES

1.575 V

1.425 V

1.5

NO

CMOS

COMMERCIAL

NO LEAD

.6 mm

ZIG-ZAG

3.8 mm

MT18KDF1G72PDZ-1G4E1 by Micron Technology

MT18KDF1G72PDZ-1G4E1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Package Shape: RECTANGULAR; Maximum Supply Voltage (Vsup): 1.45 V;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY

R-XDMA-N240

133.35 mm

77309411328 bit

DDR DRAM MODULE

72

1

1

240

1073741824 words

1G

SYNCHRONOUS

70 Cel

0 Cel

1GX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

18.9 mm

YES

1.45 V

1.283 V

1.35

NO

CMOS

COMMERCIAL

NO LEAD

1 mm

DUAL

4 mm

MT36KDZS2G72PZ-1G4E1 by Micron Technology

MT36KDZS2G72PZ-1G4E1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Package Shape: RECTANGULAR; Package Body Material: UNSPECIFIED;

DUAL BANK PAGE BURST

SELF REFRESH; WD-MAX

R-XDMA-N240

133.35 mm

154618822656 bit

DDR DRAM MODULE

72

1

1

240

2147483648 words

2G

SYNCHRONOUS

70 Cel

0 Cel

2GX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

NOT SPECIFIED

18.9 mm

YES

1.45 V

1.283 V

1.35

NO

CMOS

COMMERCIAL

NO LEAD

.8 mm

DUAL

NOT SPECIFIED

6.19 mm

MT36KSS2G72RHZ-1G6E1 by Micron Technology

MT36KSS2G72RHZ-1G6E1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 204; Package Code: DIMM; Package Shape: RECTANGULAR; Maximum Operating Temperature: 70 Cel;

FOUR BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY

R-XDMA-N204

67.6 mm

154618822656 bit

DDR DRAM MODULE

72

1

1

204

2147483648 words

2G

SYNCHRONOUS

70 Cel

0 Cel

2GX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.15 mm

YES

1.45 V

1.283 V

1.35

NO

CMOS

COMMERCIAL

NO LEAD

DUAL

3.8 mm

MT36KSF1G72PZ-1G4K1 by Micron Technology

MT36KSF1G72PZ-1G4K1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Package Shape: RECTANGULAR; Terminal Position: DUAL;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XDMA-N240

133.35 mm

77309411328 bit

DDR DRAM MODULE

72

1

1

240

1073741824 words

1G

SYNCHRONOUS

70 Cel

0 Cel

1GX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.5 mm

YES

1.575 V

1.425 V

1.5

NO

CMOS

COMMERCIAL

NO LEAD

1 mm

DUAL

4 mm

MT46V16M16CY-5B:M by Micron Technology

MT46V16M16CY-5B:M

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 60; Package Code: TBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

200 MHz

COMMON

2,4,8

R-PBGA-B60

e1

12.5 mm

268435456 bit

DDR1 DRAM

16

1

1

60

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX16

3-STATE

PLASTIC/EPOXY

TBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

2.6

Not Qualified

8192

1.2 mm

YES

2,4,8

.004 Amp

DRAMs

175 mA

2.7 V

2.5 V

2.6

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

8 mm

MT46V16M16P-5B:M by Micron Technology

MT46V16M16P-5B:M

Micron Technology

Micron Technology's MT46V16M16P-5B:M is a DDR1 DRAM with 16MX16 organization, operating at 200 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in commercial temperature environments.

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

200 MHz

COMMON

2,4,8

R-PDSO-G66

e3

22.22 mm

268435456 bit

DDR1 DRAM

16

3

1

1

66

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX16

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

260

2.6

Not Qualified

8192

1.2 mm

YES

2,4,8

.004 Amp

DRAMs

175 mA

2.7 V

2.5 V

2.6

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

GULL WING

.65 mm

DUAL

30

10.16 mm

MT9JSF25672AKZ-1G4K1 by Micron Technology

MT9JSF25672AKZ-1G4K1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 244; Package Code: DIMM; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 1.425 V;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XDMA-N244

82 mm

19327352832 bit

DDR DRAM MODULE

72

1

1

244

268435456 words

256M

SYNCHRONOUS

70 Cel

0 Cel

256MX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.15 mm

YES

1.575 V

1.425 V

1.5

NO

CMOS

COMMERCIAL

NO LEAD

DUAL

3.8 mm

MT9KSF25672AZ-1G4K1 by Micron Technology

MT9KSF25672AZ-1G4K1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Package Shape: RECTANGULAR; Package Body Material: UNSPECIFIED;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY

R-XDMA-N240

133.35 mm

19327352832 bit

DDR DRAM MODULE

72

1

1

240

268435456 words

256M

SYNCHRONOUS

70 Cel

0 Cel

256MX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.5 mm

YES

1.45 V

1.283 V

1.35

NO

CMOS

COMMERCIAL

NO LEAD

1 mm

DUAL

2.7 mm

MT4LSDT864HG-13EG2 by Micron Technology

MT4LSDT864HG-13EG2

Micron Technology

SYNCHRONOUS DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 144; Package Code: DIMM; Package Shape: RECTANGULAR; Minimum Operating Temperature: 0 Cel;

SINGLE BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH; WD-MAX

R-XZMA-N144

e0

67.585 mm

536870912 bit

SYNCHRONOUS DRAM MODULE

64

1

1

144

8388608 words

8M

SYNCHRONOUS

65 Cel

0 Cel

8MX64

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

25.53 mm

YES

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

TIN LEAD

NO LEAD

ZIG-ZAG

3.8 mm

MT4LSDT864HY-133G2 by Micron Technology

MT4LSDT864HY-133G2

Micron Technology

SYNCHRONOUS DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 144; Package Code: DIMM; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 3.3;

SINGLE BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH; WD-MAX

R-XZMA-N144

e4

67.585 mm

536870912 bit

SYNCHRONOUS DRAM MODULE

64

1

1

144

8388608 words

8M

SYNCHRONOUS

65 Cel

0 Cel

8MX64

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

25.53 mm

YES

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

GOLD

NO LEAD

ZIG-ZAG

3.8 mm

MT48LC2M32B2B5-6A:J by Micron Technology

MT48LC2M32B2B5-6A:J

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 90; Package Code: VFBGA; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

166 MHz

COMMON

1,2,4,8

R-PBGA-B90

e1

13 mm

67108864 bit

SYNCHRONOUS DRAM

32

1

1

90

2097152 words

2M

SYNCHRONOUS

70 Cel

0 Cel

2MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

3.3

Not Qualified

4096

1 mm

YES

1,2,4,8,FP

.0025 Amp

DRAMs

180 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT18VDDF12872G-335D3 by Micron Technology

MT18VDDF12872G-335D3

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 184; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

.7 ns

166 MHz

COMMON

R-PDMA-N184

e4

9663676416 bit

DDR DRAM MODULE

72

184

134217728 words

128M

70 Cel

0 Cel

128MX72

3-STATE

PLASTIC/EPOXY

DIMM

DIMM184

RECTANGULAR

MICROELECTRONIC ASSEMBLY

2.5

Not Qualified

8192

.09 Amp

DRAMs

7290 mA

2.5

NO

CMOS

COMMERCIAL

Gold (Au)

NO LEAD

1.27 mm

DUAL

MT48LC16M16A2P-7E:G by Micron Technology

MT48LC16M16A2P-7E:G

Micron Technology

Micron Technology's MT48LC16M16A2P-7E:G is a 16MX16 Synchronous DRAM with 16777216 words, 268435456 bit memory density, and 143 MHz clock frequency. Ideal for commercial applications requiring fast access time and low standby current consumption.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

143 MHz

COMMON

1,2,4,8

R-PDSO-G54

e3

22.22 mm

268435456 bit

SYNCHRONOUS DRAM

16

1

1

54

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP54,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

260

3.3

Not Qualified

8192

1.2 mm

YES

1,2,4,8,FP

.0025 Amp

DRAMs

150 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.8 mm

DUAL

30

10.16 mm

MT48LC4M16A2P-7E:J by Micron Technology

MT48LC4M16A2P-7E:J

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: TSOP2; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

143 MHz

COMMON

1,2,4,8

R-PDSO-G54

e3

22.22 mm

67108864 bit

SYNCHRONOUS DRAM

16

1

1

54

4194304 words

4M

SYNCHRONOUS

70 Cel

0 Cel

4MX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP54,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

260

3.3

Not Qualified

4096

1.2 mm

YES

1,2,4,8,FP

.0025 Amp

DRAMs

150 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

GULL WING

.8 mm

DUAL

30

10.16 mm

MT48LC2M32B2P-6A:J by Micron Technology

MT48LC2M32B2P-6A:J

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 86; Package Code: TSOP2; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

166 MHz

COMMON

1,2,4,8

R-PDSO-G86

e3

22.22 mm

67108864 bit

SYNCHRONOUS DRAM

32

1

1

86

2097152 words

2M

SYNCHRONOUS

70 Cel

0 Cel

2MX32

3-STATE

PLASTIC/EPOXY

TSOP2

TSSOP86,.46,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

260

3.3

Not Qualified

4096

1.2 mm

YES

1,2,4,8,FP

.0025 Amp

DRAMs

180 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

30

10.16 mm

MT18KBZS1G72AKZ-1G6E1 by Micron Technology

MT18KBZS1G72AKZ-1G6E1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 1.35;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XDMA-N240

82 mm

77309411328 bit

DDR DRAM MODULE

72

1

1

240

1073741824 words

1G

SYNCHRONOUS

70 Cel

0 Cel

1GX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

17.91 mm

YES

1.45 V

1.283 V

1.35

NO

CMOS

COMMERCIAL

NO LEAD

.6 mm

DUAL

3.8 mm

MT48LC2M32B2P-5:J by Micron Technology

MT48LC2M32B2P-5:J

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 86; Package Code: TSOP2; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

4.5 ns

AUTO/SELF REFRESH

200 MHz

COMMON

1,2,4,8

R-PDSO-G86

e3

22.22 mm

67108864 bit

SYNCHRONOUS DRAM

32

1

1

86

2097152 words

2M

SYNCHRONOUS

70 Cel

0 Cel

2MX32

3-STATE

PLASTIC/EPOXY

TSOP2

TSSOP86,.46,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

260

3.3

Not Qualified

4096

1.2 mm

YES

1,2,4,8,FP

DRAMs

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

30

10.16 mm

MT16HTF25664HZ-667H1 by Micron Technology

MT16HTF25664HZ-667H1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 200; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

333 MHz

COMMON

R-PDMA-N200

17179869184 bit

DDR DRAM MODULE

64

200

268435456 words

256M

70 Cel

0 Cel

256MX64

3-STATE

PLASTIC/EPOXY

DIMM

DIMM200,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

260

1.8

Not Qualified

8192

.112 Amp

DRAMs

3440 mA

1.8

NO

CMOS

COMMERCIAL

NO LEAD

.6 mm

DUAL

30

MT16HTF25664HZ-800H1 by Micron Technology

MT16HTF25664HZ-800H1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 200; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

400 MHz

COMMON

R-XZMA-N200

e4

67.6 mm

17179869184 bit

DDR DRAM MODULE

64

1

1

200

268435456 words

256M

SYNCHRONOUS

70 Cel

0 Cel

256MX64

3-STATE

UNSPECIFIED

DIMM

DIMM200,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.8

Not Qualified

8192

30.15 mm

YES

.112 Amp

DRAMs

3760 mA

1.9 V

1.7 V

1.8

NO

CMOS

COMMERCIAL

GOLD

NO LEAD

.6 mm

ZIG-ZAG

3.8 mm

MT18HTF25672PKZ-80EH1 by Micron Technology

MT18HTF25672PKZ-80EH1

Micron Technology

DRAMs; Temperature Grade: COMMERCIAL; No. of Terminals: 244; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

.4 ns

400 MHz

COMMON

R-PDMA-N244

19327352832 bit

72

244

268435456 words

256M

70 Cel

0 Cel

256MX72

3-STATE

PLASTIC/EPOXY

DIMM

DIMM244,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

260

1.8

Not Qualified

8192

Other Memory ICs

4230 mA

1.8

NO

CMOS

COMMERCIAL

NO LEAD

.6 mm

DUAL

30

MT8HTF12864HDZ-667H1 by Micron Technology

MT8HTF12864HDZ-667H1

Micron Technology

MT8HTF12864HDZ-667H1 by Micron Technology is a 128MX64 DDR DRAM MODULE with 400 MHz clock frequency. It operates at 1.8V, has 200 terminals, and supports DUAL BANK PAGE BURST access mode. Ideal for applications requiring high-speed synchronous memory with a memory density of 8589934592 bits.

DUAL BANK PAGE BURST

.4 ns

AUTO/SELF REFRESH; WD-MAX

400 MHz

COMMON

R-XZMA-N200

e4

67.6 mm

8589934592 bit

DDR DRAM MODULE

64

1

1

200

134217728 words

128M

SYNCHRONOUS

70 Cel

0 Cel

128MX64

3-STATE

UNSPECIFIED

DIMM

DIMM200,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.8

Not Qualified

8192

30.15 mm

YES

.056 Amp

DRAMs

1430 mA

3.6 V

1.7 V

1.8

NO

CMOS

COMMERCIAL

GOLD

NO LEAD

.45 mm

ZIG-ZAG

3.8 mm

MT8HTF12864HDZ-800H1 by Micron Technology

MT8HTF12864HDZ-800H1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 200; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

DUAL BANK PAGE BURST

.4 ns

SELF REFRESH; WD-MAX

400 MHz

COMMON

R-XZMA-N200

e4

67.6 mm

8589934592 bit

DDR DRAM MODULE

64

1

1

200

134217728 words

128M

SYNCHRONOUS

70 Cel

0 Cel

128MX64

3-STATE

UNSPECIFIED

DIMM

DIMM200,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.8

Not Qualified

8192

30.15 mm

YES

.056 Amp

DRAMs

1790 mA

3.6 V

1.7 V

1.8

NO

CMOS

COMMERCIAL

GOLD

NO LEAD

.45 mm

ZIG-ZAG

3.8 mm

MT9HTF12872PZ-667H1 by Micron Technology

MT9HTF12872PZ-667H1

Micron Technology

DRAMs; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

.45 ns

333 MHz

COMMON

R-PDMA-N240

e4

9663676416 bit

72

240

134217728 words

128M

70 Cel

0 Cel

128MX72

3-STATE

PLASTIC/EPOXY

DIMM

DIMM240,40

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.8

Not Qualified

8192

.063 Amp

Other Memory ICs

1665 mA

1.8

NO

CMOS

COMMERCIAL

GOLD

NO LEAD

1 mm

DUAL

MT9HTF12872RHZ-80EH1 by Micron Technology

MT9HTF12872RHZ-80EH1

Micron Technology

DRAMs; Temperature Grade: COMMERCIAL; No. of Terminals: 200; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

.4 ns

400 MHz

COMMON

R-PDMA-N200

9663676416 bit

72

200

134217728 words

128M

70 Cel

0 Cel

128MX72

3-STATE

PLASTIC/EPOXY

DIMM

DIMM200,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

260

1.8

Not Qualified

8192

.063 Amp

Other Memory ICs

1890 mA

1.8

NO

CMOS

COMMERCIAL

NO LEAD

.6 mm

DUAL

30

MT9HVF12872PKZ-80EH1 by Micron Technology

MT9HVF12872PKZ-80EH1

Micron Technology

DRAMs; Temperature Grade: COMMERCIAL; No. of Terminals: 244; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

400 MHz

COMMON

R-PDMA-N244

9663676416 bit

72

244

134217728 words

128M

70 Cel

0 Cel

128MX72

3-STATE

PLASTIC/EPOXY

DIMM

DIMM244,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

260

1.8

Not Qualified

8192

.063 Amp

Other Memory ICs

3015 mA

1.8

NO

CMOS

COMMERCIAL

NO LEAD

.6 mm

DUAL

30

MT48LC16M16A2B4-7E:G by Micron Technology

MT48LC16M16A2B4-7E:G

Micron Technology

Micron Technology's MT48LC16M16A2B4-7E:G is a 16MX16 DRAM with 3.3V supply, 143 MHz clock frequency, and 5.4 ns access time. Ideal for commercial applications requiring high-speed memory with common I/O type and self-refresh capability in a compact grid array package.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

143 MHz

COMMON

1,2,4,8

S-PBGA-B54

e1

8 mm

268435456 bit

SYNCHRONOUS DRAM

16

1

1

54

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA54,9X9,32

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

260

3.3

Not Qualified

8192

1 mm

YES

1,2,4,8,FP

.0025 Amp

DRAMs

150 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

8 mm

MT48LC2M32B2TG-6A:J by Micron Technology

MT48LC2M32B2TG-6A:J

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 86; Package Code: TSOP2; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

166 MHz

COMMON

1,2,4,8

R-PDSO-G86

e0

22.22 mm

67108864 bit

SYNCHRONOUS DRAM

32

1

1

86

2097152 words

2M

SYNCHRONOUS

70 Cel

0 Cel

2MX32

3-STATE

PLASTIC/EPOXY

TSOP2

TSSOP86,.46,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

3.3

Not Qualified

4096

1.2 mm

YES

1,2,4,8,FP

.0025 Amp

DRAMs

180 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

DUAL

10.16 mm

MT9JSF25672AZ-1G9K1 by Micron Technology

MT9JSF25672AZ-1G9K1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Package Shape: RECTANGULAR; Maximum Supply Voltage (Vsup): 1.575 V;

SINGLE BANK PAGE BURST

SELF REFRESH; WD-MAX

R-XDMA-N240

133.35 mm

19327352832 bit

DDR DRAM MODULE

72

1

1

240

268435456 words

256M

SYNCHRONOUS

70 Cel

0 Cel

256MX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.5 mm

YES

1.575 V

1.425 V

1.5

NO

CMOS

COMMERCIAL

NO LEAD

DUAL

2.7 mm

MT48LC4M16A2B4-6A:J by Micron Technology

MT48LC4M16A2B4-6A:J

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: VFBGA; Refresh Cycles: 4096; Package Shape: SQUARE;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

167 MHz

COMMON

1,2,4,8

S-PBGA-B54

8 mm

67108864 bit

SYNCHRONOUS DRAM

16

1

1

54

4194304 words

4M

SYNCHRONOUS

70 Cel

0 Cel

4MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA54,9X9,32

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

3.3

Not Qualified

4096

1 mm

YES

1,2,4,8,FP

.0025 Amp

DRAMs

150 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

8 mm

MT48LC4M16A2B4-7E:J by Micron Technology

MT48LC4M16A2B4-7E:J

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: VFBGA; Refresh Cycles: 4096; Package Shape: SQUARE;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

143 MHz

COMMON

1,2,4,8

S-PBGA-B54

8 mm

67108864 bit

SYNCHRONOUS DRAM

16

1

1

54

4194304 words

4M

SYNCHRONOUS

70 Cel

0 Cel

4MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA54,9X9,32

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

3.3

Not Qualified

4096

1 mm

YES

1,2,4,8,FP

.0025 Amp

DRAMs

150 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

8 mm

MT48LC8M8A2P-6A:J by Micron Technology

MT48LC8M8A2P-6A:J

Micron Technology

Micron Technology's MT48LC8M8A2P-6A:J is a 3.3V Synchronous DRAM with 8MX8 organization, operating at 167MHz clock frequency. It features common I/O type, self-refresh mode, and 4096 refresh cycles. Ideal for commercial applications requiring high-speed memory access in a compact form factor.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

167 MHz

COMMON

1,2,4,8

R-PDSO-G54

e3

22.22 mm

67108864 bit

SYNCHRONOUS DRAM

8

1

1

54

8388608 words

8M

SYNCHRONOUS

70 Cel

0 Cel

8MX8

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP54,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

3.3

Not Qualified

4096

1.2 mm

YES

1,2,4,8,FP

.0025 Amp

DRAMs

150 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.8 mm

DUAL

10.16 mm

MT9KSF51272HZ-1G6E1 by Micron Technology

MT9KSF51272HZ-1G6E1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 204; Package Code: DIMM; Package Shape: RECTANGULAR; Width: 3.8 mm;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY

R-XZMA-N204

67.6 mm

38654705664 bit

DDR DRAM MODULE

72

1

1

204

536870912 words

512M

SYNCHRONOUS

70 Cel

0 Cel

512MX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.15 mm

YES

1.45 V

1.283 V

1.35

NO

CMOS

COMMERCIAL

NO LEAD

.6 mm

ZIG-ZAG

3.8 mm

MT8KTF25664HZ-1G6M1 by Micron Technology

MT8KTF25664HZ-1G6M1

Micron Technology

Micron Technology's MT8KTF25664HZ-1G6M1 is a 256MX64 DDR DRAM MODULE with 800 MHz clock frequency. Operating at 1.35V, it features synchronous mode and self-refresh capability. Ideal for applications requiring high-speed memory performance in commercial temperature environments.

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

800 MHz

COMMON

R-XZMA-N204

e4

67.6 mm

17179869184 bit

DDR DRAM MODULE

64

1

1

204

268435456 words

256M

SYNCHRONOUS

70 Cel

0 Cel

256MX64

3-STATE

UNSPECIFIED

DIMM

DIMM204,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.35

Not Qualified

8192

30.15 mm

YES

.096 Amp

DRAMs

1760 mA

1.45 V

1.283 V

1.35

NO

CMOS

COMMERCIAL

Gold (Au)

NO LEAD

.6 mm

ZIG-ZAG

3.8 mm

W9864G6KH-6I by Winbond Electronics

W9864G6KH-6I

Winbond Electronics

The Winbond Electronics W9864G6KH-6I is a 4MX16 Synchronous DRAM with 67108864-bit memory density. Operating at 3.3V, it features a max access time of 5ns and supports four bank page burst access mode. Ideal for commercial applications requiring high-speed memory solutions in compact form factors.

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

R-PDSO-G54

22.22 mm

67108864 bit

SYNCHRONOUS DRAM

16

1

1

54

4194304 words

4M

SYNCHRONOUS

70 Cel

0 Cel

4MX16

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

NOT SPECIFIED

1.2 mm

YES

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

GULL WING

.8 mm

DUAL

NOT SPECIFIED

10.16 mm

TM124BBK32-80 by Texas Instruments

TM124BBK32-80

Texas Instruments

TM124BBK32-80 by Texas Instruments is a 1MX32 DRAM module with 1048576 words, 32-bit memory width, and 33554432 bit memory density. It operates in asynchronous mode with a max access time of 80 ns. Ideal for applications requiring fast page access and common I/O type in microelectronic assemblies.

FAST PAGE

80 ns

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

COMMON

R-XSMA-N72

33554432 bit

FAST PAGE DRAM MODULE

32

1

1

72

1048576 words

1M

ASYNCHRONOUS

70 Cel

0 Cel

1MX32

3-STATE

UNSPECIFIED

SIMM

SSIM72

RECTANGULAR

MICROELECTRONIC ASSEMBLY

5

Not Qualified

1024

25.527 mm

NO

.008 Amp

DRAMs

640 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

NO LEAD

1.27 mm

SINGLE

TM124BBK32S-80 by Texas Instruments

TM124BBK32S-80

Texas Instruments

TM124BBK32S-80 by Texas Instruments is a 1MX32 DRAM module with 1048576 words, 32-bit memory width, and 33554432 bit memory density. It operates in FAST PAGE access mode with an 80 ns max access time. Ideal for commercial applications requiring high-speed data storage and retrieval.

FAST PAGE

80 ns

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

COMMON

R-XSMA-N72

33554432 bit

FAST PAGE DRAM MODULE

32

1

1

72

1048576 words

1M

ASYNCHRONOUS

70 Cel

0 Cel

1MX32

3-STATE

UNSPECIFIED

SIMM

SSIM72

RECTANGULAR

MICROELECTRONIC ASSEMBLY

5

Not Qualified

1024

25.527 mm

NO

.008 Amp

DRAMs

640 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

NO LEAD

1.27 mm

SINGLE

TMS48C121-10DZ by Texas Instruments

TMS48C121-10DZ

Texas Instruments

TMS48C121-10DZ by Texas Instruments is a 128Kx8 DRAM with 131072 words, operating at 5V. It features an asynchronous mode, 100ns access time, and 512 refresh cycles. Ideal for video applications due to its small outline package and CMOS technology.

FAST PAGE

100 ns

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 8 SAM PORT

R-PDSO-J40

26.035 mm

1048576 bit

VIDEO DRAM

8

1

2

40

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

3-STATE

PLASTIC/EPOXY

SOJ

SOJ40,.44

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

5

Not Qualified

512

3.76 mm

.01 Amp

Other Memory ICs

95 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

J BEND

1.27 mm

DUAL

NOT SPECIFIED

10.16 mm

TMS48C128-80DJ by Texas Instruments

TMS48C128-80DJ

Texas Instruments

TMS48C128-80DJ by Texas Instruments is a 128Kx8 FAST PAGE DRAM with 80ns access time, operating at 5V. It features 3-STATE output characteristics and consumes up to 80mA. Ideal for applications requiring high-speed memory operations in commercial temperature environments.

FAST PAGE

80 ns

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

COMMON

R-PDSO-J24

17.145 mm

1048576 bit

FAST PAGE DRAM

8

1

1

24

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

3-STATE

PLASTIC/EPOXY

SOJ

SOJ24/26,.34

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

5

Not Qualified

512

3.76 mm

.002 Amp

DRAMs

80 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

J BEND

1.27 mm

DUAL

NOT SPECIFIED

7.57 mm

TMS626402-12DGE by Texas Instruments

TMS626402-12DGE

Texas Instruments

TMS626402-12DGE by Texas Instruments is a 4MX4 Synchronous DRAM with 16777216 bit memory density. Operating at 3.3V, it offers dual bank page burst access mode and self-refresh capability. Ideal for commercial applications requiring high-speed data processing in compact devices.

DUAL BANK PAGE BURST

CAS BEFORE RAS/SELF REFRESH

R-PDSO-G44

18.41 mm

16777216 bit

SYNCHRONOUS DRAM

4

1

1

44

4194304 words

4M

SYNCHRONOUS

70 Cel

0 Cel

4MX4

3-STATE

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

Not Qualified

4096

1.2 mm

YES

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

GULL WING

.8 mm

DUAL

10.16 mm

TMS44165-70DZ by Texas Instruments

TMS44165-70DZ

Texas Instruments

TMS44165-70DZ by Texas Instruments is a 256Kx16 DRAM with 70ns access time, operating at 5V. It features asynchronous mode, common I/O type, and 3-state output characteristics. Ideal for applications requiring fast page access in commercial temperature grades.

FAST PAGE

70 ns

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

COMMON

R-PDSO-J40

26.035 mm

4194304 bit

FAST PAGE DRAM

16

1

1

40

262144 words

256K

ASYNCHRONOUS

70 Cel

0 Cel

256KX16

3-STATE

PLASTIC/EPOXY

SOJ

SOJ40,.44

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

5

Not Qualified

1024

3.76 mm

NO

.001 Amp

DRAMs

120 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

J BEND

1.27 mm

DUAL

NOT SPECIFIED

10.16 mm

TM248NBK36R-80 by Texas Instruments

TM248NBK36R-80

Texas Instruments

TM248NBK36R-80 by Texas Instruments is a 2MX36 DRAM module with 75497472-bit memory density. It operates at 5V, has a memory width of 36, and offers fast page access mode. Ideal for applications requiring high-speed data storage in commercial temperature environments.

FAST PAGE

80 ns

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

COMMON

R-XSMA-N72

75497472 bit

FAST PAGE DRAM MODULE

36

1

1

72

2097152 words

2M

ASYNCHRONOUS

70 Cel

0 Cel

2MX36

3-STATE

UNSPECIFIED

SIMM

SSIM72

RECTANGULAR

MICROELECTRONIC ASSEMBLY

5

Not Qualified

1024

25.527 mm

.018 Amp

DRAMs

1440 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

NO LEAD

1.27 mm

SINGLE

TM4100EAD9-80 by Texas Instruments

TM4100EAD9-80

Texas Instruments

TM4100EAD9-80 by Texas Instruments is a 4MX9 DRAM module with 37748736-bit memory density. It operates asynchronously at 5V, featuring self-refresh capability and fast page access mode. Ideal for applications requiring high-speed data storage in commercial temperature environments.

FAST PAGE

80 ns

AUTO/SELF REFRESH

COMMON

R-XSMA-N30

37748736 bit

FAST PAGE DRAM MODULE

9

1

1

30

4194304 words

4M

ASYNCHRONOUS

70 Cel

0 Cel

4MX9

3-STATE

UNSPECIFIED

SIMM

SIM30

RECTANGULAR

MICROELECTRONIC ASSEMBLY

5

Not Qualified

1024

20.447 mm

YES

.009 Amp

DRAMs

720 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

NO LEAD

2.54 mm

SINGLE

TM4100GAD8-80 by Texas Instruments

TM4100GAD8-80

Texas Instruments

TM4100GAD8-80 by Texas Instruments is a 4MX8 DRAM module with 3-STATE output, operating at 5V. It features ASYNCHRONOUS mode, FAST PAGE access, and self-refresh capability. Ideal for applications requiring fast memory access and common I/O type in microelectronic assemblies.

FAST PAGE

80 ns

AUTO/SELF REFRESH

COMMON

R-XSMA-N30

33554432 bit

FAST PAGE DRAM MODULE

8

1

1

30

4194304 words

4M

ASYNCHRONOUS

70 Cel

0 Cel

4MX8

3-STATE

UNSPECIFIED

SIMM

SIM30

RECTANGULAR

MICROELECTRONIC ASSEMBLY

5

Not Qualified

1024

20.447 mm

YES

.008 Amp

DRAMs

640 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

NO LEAD

2.54 mm

SINGLE

SMJ4416-15JDL by Texas Instruments

SMJ4416-15JDL

Texas Instruments

SMJ4416-15JDL by Texas Instruments is a 16KX4 PAGE MODE DRAM with 16384 words, operating at 5V. It features 3-STATE output, asynchronous mode, and common I/O type. Ideal for applications requiring fast access times and high memory density in commercial temperature environments.

PAGE

150 ns

RAS ONLY REFRESH

COMMON

R-CDIP-T18

22.606 mm

65536 bit

PAGE MODE DRAM

4

1

1

18

16384 words

16K

ASYNCHRONOUS

70 Cel

0 Cel

16KX4

3-STATE

CERAMIC, METAL-SEALED COFIRED

DIP

DIP18,.3

RECTANGULAR

IN-LINE

NOT SPECIFIED

5

Not Qualified

256

38535Q/M;38534H;883B

5.08 mm

DRAMs

5.5 V

4.5 V

5

NO

NMOS

COMMERCIAL

THROUGH-HOLE

2.54 mm

DUAL

NOT SPECIFIED

7.62 mm