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COMMERCIAL DRAM 566

DRAM
Part# Info Specs
Part RoHS Manufacturer Description Access Mode Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type Interleaved Burst Length JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Sequential Burst Length Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Width
MT36HTF51272PZ-80EH1 by Micron Technology

MT36HTF51272PZ-80EH1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

DUAL BANK PAGE BURST

.45 ns

AUTO/SELF REFRESH

400 MHz

COMMON

R-XDMA-N240

e4

133.35 mm

38654705664 bit

DDR DRAM MODULE

72

1

1

240

536870912 words

512M

SYNCHRONOUS

70 Cel

0 Cel

512MX72

3-STATE

UNSPECIFIED

DIMM

DIMM240,40

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.8

Not Qualified

8192

4 mm

YES

.252 Amp

Other Memory ICs

6150 mA

1.9 V

1.7 V

1.8

NO

CMOS

COMMERCIAL

Gold (Au)

NO LEAD

1 mm

DUAL

30.175 mm

MT18HVS25672PKZ-80EH1 by Micron Technology

MT18HVS25672PKZ-80EH1

Micron Technology

Micron Technology's MT18HVS25672PKZ-80EH1 is a 256MX72 DDR2 DRAM MODULE with 19327352832-bit memory density. Operating at 1.8V, it features synchronous mode and dual bank page burst access for commercial applications. The rectangular microelectronic assembly has a temperature range of 0-70°C, making it suitable for various memory-intensive tasks.

DUAL BANK PAGE BURST

AUTO REFRESH

R-XDMA-N244

e4

82 mm

19327352832 bit

DDR2 DRAM MODULE

72

1

1

244

268435456 words

256M

SYNCHRONOUS

70 Cel

0 Cel

256MX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

Not Qualified

3.8 mm

1.9 V

1.7 V

1.8

NO

CMOS

COMMERCIAL

GOLD

NO LEAD

DUAL

18.2 mm

MT16JSF51264HZ-1G4D1 by Micron Technology

MT16JSF51264HZ-1G4D1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 204; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH

667 MHz

COMMON

R-XDMA-N204

67.6 mm

34359738368 bit

DDR DRAM MODULE

64

1

1

204

536870912 words

512M

SYNCHRONOUS

70 Cel

0 Cel

512MX64

3-STATE

UNSPECIFIED

DIMM

DIMM204,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.5,3.3

Not Qualified

8192

3.8 mm

YES

.192 Amp

DRAMs

3016 mA

1.575 V

1.425 V

1.5

NO

CMOS

COMMERCIAL

NO LEAD

.6 mm

DUAL

30 mm

MT18HVS25672PKZ-80EM1 by Micron Technology

MT18HVS25672PKZ-80EM1

Micron Technology

DDR2 DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 244; Package Code: DIMM; Package Shape: RECTANGULAR; Organization: 256MX72;

DUAL BANK PAGE BURST

PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH; WD-MAX

R-XDMA-N244

82 mm

19327352832 bit

DDR2 DRAM MODULE

72

1

1

244

268435456 words

256M

SYNCHRONOUS

70 Cel

0 Cel

256MX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

18.3 mm

YES

1.9 V

1.7 V

1.8

NO

CMOS

COMMERCIAL

NO LEAD

DUAL

3.8 mm

MT48LC16M16A2P-6AL:G by Micron Technology

MT48LC16M16A2P-6AL:G

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: TSOP2; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

167 MHz

COMMON

1,2,4,8

R-PDSO-G54

22.22 mm

268435456 bit

SYNCHRONOUS DRAM

16

1

1

54

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP54,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

3.3

Not Qualified

8192

1.2 mm

YES

1,2,4,8,FP

.0025 Amp

DRAMs

150 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

GULL WING

.8 mm

DUAL

10.16 mm

MT48LC32M8A2BB-6A:G by Micron Technology

MT48LC32M8A2BB-6A:G

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 60; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: SQUARE;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

167 MHz

COMMON

1,2,4,8

S-PBGA-B60

16 mm

268435456 bit

SYNCHRONOUS DRAM

8

1

1

60

33554432 words

32M

SYNCHRONOUS

70 Cel

0 Cel

32MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA60,8X15,32

SQUARE

GRID ARRAY, THIN PROFILE, FINE PITCH

3.3

Not Qualified

8192

1.2 mm

YES

1,2,4,8,FP

.0025 Amp

DRAMs

150 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

8 mm

MT48LC32M8A2BB-7E:G by Micron Technology

MT48LC32M8A2BB-7E:G

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 60; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: SQUARE;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

143 MHz

COMMON

1,2,4,8

S-PBGA-B60

16 mm

268435456 bit

SYNCHRONOUS DRAM

8

1

1

60

33554432 words

32M

SYNCHRONOUS

70 Cel

0 Cel

32MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA60,8X15,32

SQUARE

GRID ARRAY, THIN PROFILE, FINE PITCH

3.3

Not Qualified

8192

1.2 mm

YES

1,2,4,8,FP

.0025 Amp

DRAMs

150 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

8 mm

MT48LC32M8A2P-6A:G by Micron Technology

MT48LC32M8A2P-6A:G

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: TSOP2; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

167 MHz

COMMON

1,2,4,8

R-PDSO-G54

22.22 mm

268435456 bit

SYNCHRONOUS DRAM

8

1

1

54

33554432 words

32M

SYNCHRONOUS

70 Cel

0 Cel

32MX8

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP54,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

3.3

Not Qualified

8192

1.2 mm

YES

1,2,4,8,FP

.0025 Amp

DRAMs

150 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

GULL WING

.8 mm

DUAL

10.16 mm

MT48LC64M4A2BB-6A:G by Micron Technology

MT48LC64M4A2BB-6A:G

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 60; Package Code: TFBGA; Package Shape: SQUARE; Memory Density: 268435456 bit;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

S-PBGA-B60

16 mm

268435456 bit

SYNCHRONOUS DRAM

4

1

1

60

67108864 words

64M

SYNCHRONOUS

70 Cel

0 Cel

64MX4

PLASTIC/EPOXY

TFBGA

SQUARE

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

8 mm

MT48LC64M4A2P-6A:G by Micron Technology

MT48LC64M4A2P-6A:G

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: TSOP2; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

167 MHz

COMMON

1,2,4,8

R-PDSO-G54

22.22 mm

268435456 bit

SYNCHRONOUS DRAM

4

1

1

54

67108864 words

64M

SYNCHRONOUS

70 Cel

0 Cel

64MX4

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP54,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

3.3

Not Qualified

8192

1.2 mm

YES

1,2,4,8,FP

.0025 Amp

DRAMs

100 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

GULL WING

.8 mm

DUAL

10.16 mm

MT8HTF6464HDY-667D3 by Micron Technology

MT8HTF6464HDY-667D3

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 200; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

DUAL BANK PAGE BURST

.45 ns

AUTO/SELF REFRESH

333 MHz

COMMON

R-XDMA-N200

e4

67.6 mm

4294967296 bit

DDR DRAM MODULE

64

1

1

200

67108864 words

64M

SYNCHRONOUS

70 Cel

0 Cel

64MX64

3-STATE

UNSPECIFIED

DIMM

DIMM200,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.8

Not Qualified

8192

3.8 mm

YES

.056 Amp

DRAMs

1480 mA

1.9 V

1.7 V

1.8

NO

CMOS

COMMERCIAL

GOLD

NO LEAD

.6 mm

DUAL

30.5 mm

MT4HTF3264AY-53ED3 by Micron Technology

MT4HTF3264AY-53ED3

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

.5 ns

267 MHz

COMMON

R-PDMA-N240

2147483648 bit

DDR DRAM MODULE

64

240

33554432 words

32M

70 Cel

0 Cel

32MX64

3-STATE

PLASTIC/EPOXY

DIMM

DIMM240,40

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.8

Not Qualified

8192

DRAMs

1360 mA

1.8

NO

CMOS

COMMERCIAL

NO LEAD

1 mm

DUAL

MT8HTF6464HDY-53ED3 by Micron Technology

MT8HTF6464HDY-53ED3

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 200; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

.5 ns

266 MHz

COMMON

R-PDMA-N200

4294967296 bit

DDR DRAM MODULE

64

200

67108864 words

64M

70 Cel

0 Cel

64MX64

3-STATE

PLASTIC/EPOXY

DIMM

DIMM200,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.8

Not Qualified

8192

.056 Amp

DRAMs

1380 mA

1.8

NO

CMOS

COMMERCIAL

NO LEAD

.6 mm

DUAL

MT16HTF6464AY-40EB2 by Micron Technology

MT16HTF6464AY-40EB2

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

.6 ns

200 MHz

COMMON

R-PDMA-N240

4294967296 bit

DDR DRAM MODULE

64

240

67108864 words

64M

70 Cel

0 Cel

64MX64

3-STATE

PLASTIC/EPOXY

DIMM

DIMM240,40

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.8

Not Qualified

8192

.08 Amp

DRAMs

1880 mA

1.8

NO

CMOS

COMMERCIAL

NO LEAD

1 mm

DUAL

MT4HTF3264HY-53ED3 by Micron Technology

MT4HTF3264HY-53ED3

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 200; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

.5 ns

267 MHz

COMMON

R-PDMA-N200

2147483648 bit

DDR DRAM MODULE

64

200

33554432 words

32M

70 Cel

0 Cel

32MX64

3-STATE

PLASTIC/EPOXY

DIMM

DIMM200,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.8

Not Qualified

8192

.028 Amp

DRAMs

1360 mA

1.8

NO

CMOS

COMMERCIAL

NO LEAD

.6 mm

DUAL

MT16HTF12864AY-53ED4 by Micron Technology

MT16HTF12864AY-53ED4

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

.5 ns

266 MHz

COMMON

R-PDMA-N240

8589934592 bit

DDR DRAM MODULE

64

240

134217728 words

128M

70 Cel

0 Cel

128MX64

3-STATE

PLASTIC/EPOXY

DIMM

DIMM240,40

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.8

Not Qualified

8192

.112 Amp

DRAMs

1856 mA

1.8

NO

CMOS

COMMERCIAL

NO LEAD

1 mm

DUAL

MT16VDDF12864HG-335D2 by Micron Technology

MT16VDDF12864HG-335D2

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 200; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

DUAL BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

167 MHz

COMMON

R-XDMA-N200

e0

8589934592 bit

DDR DRAM MODULE

64

1

1

200

134217728 words

128M

SYNCHRONOUS

70 Cel

0 Cel

128MX64

3-STATE

UNSPECIFIED

DIMM

DIMM200,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

2.5

Not Qualified

8192

YES

.08 Amp

DRAMs

3280 mA

2.7 V

2.3 V

2.5

NO

CMOS

COMMERCIAL

TIN LEAD

NO LEAD

.6 mm

DUAL

MT16LSDT6464AY-13ED2 by Micron Technology

MT16LSDT6464AY-13ED2

Micron Technology

SYNCHRONOUS DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 168; Package Shape: RECTANGULAR; Terminal Position: DUAL; No. of Words Code: 64M;

DUAL BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

R-XDMA-N168

e4

4294967296 bit

SYNCHRONOUS DRAM MODULE

64

1

1

168

67108864 words

64M

SYNCHRONOUS

70 Cel

0 Cel

64MX64

UNSPECIFIED

RECTANGULAR

MICROELECTRONIC ASSEMBLY

Not Qualified

YES

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

GOLD

NO LEAD

DUAL

MT48H16M32L2B5-10 by Micron Technology

MT48H16M32L2B5-10

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 90; Package Code: LFBGA; Package Shape: RECTANGULAR; Additional Features: AUTO/SELF REFRESH;

FOUR BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B90

e1

13 mm

536870912 bit

SYNCHRONOUS DRAM

32

1

1

90

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX32

PLASTIC/EPOXY

LFBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

Not Qualified

1.4 mm

YES

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT48H16M32L2B5-8 by Micron Technology

MT48H16M32L2B5-8

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 90; Package Code: LFBGA; Package Shape: RECTANGULAR; Self Refresh: YES;

FOUR BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B90

e1

13 mm

536870912 bit

SYNCHRONOUS DRAM

32

1

1

90

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX32

PLASTIC/EPOXY

LFBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

Not Qualified

1.4 mm

YES

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT48H16M32L2F5-10 by Micron Technology

MT48H16M32L2F5-10

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 90; Package Code: LFBGA; Package Shape: RECTANGULAR; Maximum Supply Voltage (Vsup): 1.9 V;

FOUR BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B90

e0

13 mm

536870912 bit

SYNCHRONOUS DRAM

32

1

1

90

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX32

PLASTIC/EPOXY

LFBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

Not Qualified

1.4 mm

YES

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN LEAD SILVER

BALL

.8 mm

BOTTOM

8 mm

MT48H16M32L2F5-8 by Micron Technology

MT48H16M32L2F5-8

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 90; Package Code: LFBGA; Package Shape: RECTANGULAR; Memory Width: 32;

FOUR BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B90

e0

13 mm

536870912 bit

SYNCHRONOUS DRAM

32

1

1

90

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX32

PLASTIC/EPOXY

LFBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

Not Qualified

1.4 mm

YES

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN LEAD SILVER

BALL

.8 mm

BOTTOM

8 mm

MT48H16M16LFBF-75:GTR by Micron Technology

MT48H16M16LFBF-75:GTR

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: VFBGA; Package Shape: RECTANGULAR; Minimum Operating Temperature: 0 Cel;

FOUR BANK PAGE BURST

6 ns

AUTO/SELF REFRESH

R-PBGA-B54

e1

9 mm

268435456 bit

SYNCHRONOUS DRAM

16

1

1

54

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Not Qualified

1 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT48LC32M16A2P-75:CTR by Micron Technology

MT48LC32M16A2P-75:CTR

Micron Technology

Micron Technology's MT48LC32M16A2P-75:CTR is a 32MX16 DRAM with 33554432 words and 536870912 bit memory density. Operating at 3.3V, it offers synchronous operation, self-refresh capability, and a max access time of 5.4 ns. Ideal for commercial applications requiring fast and reliable memory performance.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

R-PDSO-G54

e3

22.22 mm

536870912 bit

SYNCHRONOUS DRAM

16

1

1

54

33554432 words

32M

SYNCHRONOUS

70 Cel

0 Cel

32MX16

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

260

Not Qualified

1.2 mm

YES

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

GULL WING

.8 mm

DUAL

30

10.16 mm

MT9HTF12872PKZ-80EH1 by Micron Technology

MT9HTF12872PKZ-80EH1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 244; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

SINGLE BANK PAGE BURST

.4 ns

AUTO/SELF REFRESH

400 MHz

COMMON

R-XDMA-N244

e4

82 mm

9663676416 bit

DDR DRAM MODULE

72

1

1

244

134217728 words

128M

SYNCHRONOUS

70 Cel

0 Cel

128MX72

3-STATE

UNSPECIFIED

DIMM

DIMM244,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.8

Not Qualified

8192

3.8 mm

YES

DRAMs

1890 mA

1.9 V

1.7 V

1.8

NO

CMOS

COMMERCIAL

Gold (Au)

NO LEAD

.6 mm

DUAL

30 mm

MT9HTF12872PZ-80EH1 by Micron Technology

MT9HTF12872PZ-80EH1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

SINGLE BANK PAGE BURST

.4 ns

AUTO/SELF REFRESH

400 MHz

COMMON

R-XDMA-N240

e4

133.35 mm

9663676416 bit

DDR DRAM MODULE

72

1

1

240

134217728 words

128M

SYNCHRONOUS

70 Cel

0 Cel

128MX72

3-STATE

UNSPECIFIED

DIMM

DIMM240,40

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.8

Not Qualified

8192

30.5 mm

YES

.063 Amp

Other Memory ICs

1890 mA

1.9 V

1.7 V

1.8

NO

CMOS

COMMERCIAL

Gold (Au)

NO LEAD

1 mm

DUAL

30.175 mm

MT16HTS51264HY-667A1 by Micron Technology

MT16HTS51264HY-667A1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 200; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

DUAL BANK PAGE BURST

.45 ns

AUTO/SELF REFRESH

333 MHz

COMMON

R-XZMA-N200

e4

67.6 mm

34359738368 bit

DDR DRAM MODULE

64

1

1

200

536870912 words

512M

SYNCHRONOUS

70 Cel

0 Cel

512MX64

3-STATE

UNSPECIFIED

DIMM

DIMM200,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.8

Not Qualified

8192

3.8 mm

YES

.128 Amp

DRAMs

2824 mA

1.9 V

1.7 V

1.8

NO

CMOS

COMMERCIAL

GOLD

NO LEAD

.6 mm

ZIG-ZAG

30 mm

MT16VDDF12864HY-335F2 by Micron Technology

MT16VDDF12864HY-335F2

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 200; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

DUAL BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

167 MHz

COMMON

R-XZMA-N200

e4

8589934592 bit

DDR DRAM MODULE

64

1

1

200

134217728 words

128M

SYNCHRONOUS

70 Cel

0 Cel

128MX64

3-STATE

UNSPECIFIED

DIMM

DIMM200,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

2.5

Not Qualified

8192

YES

.08 Amp

DRAMs

4640 mA

2.7 V

2.3 V

2.5

NO

CMOS

COMMERCIAL

GOLD

NO LEAD

.6 mm

ZIG-ZAG

MT8VDDT6464HDG-40BF2 by Micron Technology

MT8VDDT6464HDG-40BF2

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 200; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

.7 ns

200 MHz

COMMON

R-PDMA-N200

4294967296 bit

DDR DRAM MODULE

64

200

67108864 words

64M

70 Cel

0 Cel

64MX64

3-STATE

PLASTIC/EPOXY

DIMM

DIMM200,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

2.6

Not Qualified

8192

.04 Amp

DRAMs

1940 mA

2.6

NO

CMOS

COMMERCIAL

NO LEAD

.6 mm

DUAL

MT18VDDF12872Y-335F1 by Micron Technology

MT18VDDF12872Y-335F1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 184; Package Code: DIMM; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 2.5;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XDMA-N184

e4

133.35 mm

9663676416 bit

DDR DRAM MODULE

72

1

1

184

134217728 words

128M

SYNCHRONOUS

70 Cel

0 Cel

128MX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

260

Not Qualified

28.73 mm

YES

2.7 V

2.3 V

2.5

NO

CMOS

COMMERCIAL

Gold (Au)

NO LEAD

1.27 mm

DUAL

30

3.99 mm

MT18VDDT12872AY-335F1 by Micron Technology

MT18VDDT12872AY-335F1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 184; Package Code: DIMM; Package Shape: RECTANGULAR; No. of Words Code: 128M;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XDMA-N184

e4

133.35 mm

9663676416 bit

DDR DRAM MODULE

72

1

1

184

134217728 words

128M

SYNCHRONOUS

70 Cel

0 Cel

128MX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

260

Not Qualified

31.9 mm

YES

2.7 V

2.3 V

2.5

NO

CMOS

COMMERCIAL

Gold (Au)

NO LEAD

1.27 mm

DUAL

30

4 mm

MT8VDDT6464HDG-335F2 by Micron Technology

MT8VDDT6464HDG-335F2

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 200; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

.7 ns

167 MHz

COMMON

R-PDMA-N200

4294967296 bit

DDR DRAM MODULE

64

200

67108864 words

64M

70 Cel

0 Cel

64MX64

3-STATE

PLASTIC/EPOXY

DIMM

DIMM200,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

2.5

Not Qualified

8192

.04 Amp

DRAMs

1640 mA

2.5

NO

CMOS

COMMERCIAL

NO LEAD

.6 mm

DUAL

MT16VDDT12864AY-335F2 by Micron Technology

MT16VDDT12864AY-335F2

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 184; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

.7 ns

167 MHz

COMMON

R-PDMA-N184

8589934592 bit

DDR DRAM MODULE

64

184

134217728 words

128M

70 Cel

0 Cel

128MX64

3-STATE

PLASTIC/EPOXY

DIMM

DIMM184

RECTANGULAR

MICROELECTRONIC ASSEMBLY

2.5

Not Qualified

8192

.08 Amp

DRAMs

4640 mA

2.5

NO

CMOS

COMMERCIAL

NO LEAD

1.27 mm

DUAL

MT8VDDT3264HY-335G3 by Micron Technology

MT8VDDT3264HY-335G3

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 200; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

.7 ns

167 MHz

COMMON

R-PDMA-N200

2147483648 bit

DDR DRAM MODULE

64

200

33554432 words

32M

70 Cel

0 Cel

32MX64

3-STATE

PLASTIC/EPOXY

DIMM

DIMM200,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

2.5

Not Qualified

8192

DRAMs

3280 mA

2.5

NO

CMOS

COMMERCIAL

NO LEAD

.6 mm

DUAL

MT36VDDF12872G-335G3 by Micron Technology

MT36VDDF12872G-335G3

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 184; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

.7 ns

166 MHz

COMMON

R-PDMA-N184

9663676416 bit

DDR DRAM MODULE

72

184

134217728 words

128M

70 Cel

0 Cel

128MX72

3-STATE

PLASTIC/EPOXY

DIMM

DIMM184

RECTANGULAR

MICROELECTRONIC ASSEMBLY

2.5

Not Qualified

8192

DRAMs

10440 mA

2.5

NO

CMOS

COMMERCIAL

NO LEAD

1.27 mm

DUAL

MT4VDDT3264HG-335F2 by Micron Technology

MT4VDDT3264HG-335F2

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 200; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

.7 ns

167 MHz

COMMON

R-PDMA-N200

2147483648 bit

DDR DRAM MODULE

64

200

33554432 words

32M

70 Cel

0 Cel

32MX64

3-STATE

PLASTIC/EPOXY

DIMM

DIMM200,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

2.5

Not Qualified

8192

DRAMs

1620 mA

2.5

NO

CMOS

COMMERCIAL

NO LEAD

.6 mm

DUAL

MT9VDDT6472AY-335F1 by Micron Technology

MT9VDDT6472AY-335F1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 184; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

SINGLE BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

167 MHz

COMMON

R-XDMA-N184

e4

133.35 mm

4831838208 bit

DDR DRAM MODULE

72

1

1

184

67108864 words

64M

SYNCHRONOUS

70 Cel

0 Cel

64MX72

3-STATE

UNSPECIFIED

DIMM

DIMM184

RECTANGULAR

MICROELECTRONIC ASSEMBLY

2.5

Not Qualified

8192

3.18 mm

YES

.045 Amp

Other Memory ICs

3645 mA

2.7 V

2.3 V

2.5

NO

CMOS

COMMERCIAL

GOLD

NO LEAD

1.27 mm

DUAL

31.75 mm

MT16VDDF6464HY-335G2 by Micron Technology

MT16VDDF6464HY-335G2

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 200; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

.7 ns

167 MHz

COMMON

R-PDMA-N200

4294967296 bit

DDR DRAM MODULE

64

200

67108864 words

64M

70 Cel

0 Cel

64MX64

3-STATE

PLASTIC/EPOXY

DIMM

DIMM200,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

2.5

Not Qualified

8192

.064 Amp

DRAMs

4080 mA

2.5

NO

CMOS

COMMERCIAL

NO LEAD

.6 mm

DUAL

MT8VDDT3264AY-40BG6 by Micron Technology

MT8VDDT3264AY-40BG6

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 184; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

.7 ns

200 MHz

COMMON

R-PDMA-N184

2147483648 bit

DDR DRAM MODULE

64

184

33554432 words

32M

70 Cel

0 Cel

32MX64

3-STATE

PLASTIC/EPOXY

DIMM

DIMM184

RECTANGULAR

MICROELECTRONIC ASSEMBLY

2.6

Not Qualified

8192

.032 Amp

DRAMs

3760 mA

2.6

NO

CMOS

COMMERCIAL

NO LEAD

1.27 mm

DUAL

MT16VDDF6464HG-335G2 by Micron Technology

MT16VDDF6464HG-335G2

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 200; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

.7 ns

167 MHz

COMMON

R-PDMA-N200

4294967296 bit

DDR DRAM MODULE

64

200

67108864 words

64M

70 Cel

0 Cel

64MX64

3-STATE

PLASTIC/EPOXY

DIMM

DIMM200,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

2.5

Not Qualified

8192

.064 Amp

DRAMs

4080 mA

2.5

NO

CMOS

COMMERCIAL

NO LEAD

.6 mm

DUAL

MT8VDDT3264AG-40BG6 by Micron Technology

MT8VDDT3264AG-40BG6

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 184; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

.7 ns

200 MHz

COMMON

R-PDMA-N184

2147483648 bit

DDR DRAM MODULE

64

184

33554432 words

32M

70 Cel

0 Cel

32MX64

3-STATE

PLASTIC/EPOXY

DIMM

DIMM184

RECTANGULAR

MICROELECTRONIC ASSEMBLY

2.6

Not Qualified

8192

.032 Amp

DRAMs

3760 mA

2.6

NO

CMOS

COMMERCIAL

NO LEAD

1.27 mm

DUAL

MT9VDDT6472HY-335F2 by Micron Technology

MT9VDDT6472HY-335F2

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 200; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

SINGLE BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

166 MHz

COMMON

R-XZMA-N200

e4

67.6 mm

4831838208 bit

DDR DRAM MODULE

72

1

1

200

67108864 words

64M

SYNCHRONOUS

70 Cel

0 Cel

64MX72

3-STATE

UNSPECIFIED

DIMM

DIMM200,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

2.5

Not Qualified

8192

3.8 mm

YES

.045 Amp

Other Memory ICs

3645 mA

2.7 V

2.3 V

2.5

NO

CMOS

COMMERCIAL

GOLD

NO LEAD

.6 mm

ZIG-ZAG

31.75 mm

MT46V128M4FN-6:FTR by Micron Technology

MT46V128M4FN-6:FTR

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 60; Package Code: TBGA; Package Shape: RECTANGULAR; Memory Width: 4;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

R-PBGA-B60

e0

12.5 mm

536870912 bit

DDR1 DRAM

4

1

1

60

134217728 words

128M

SYNCHRONOUS

70 Cel

0 Cel

128MX4

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

Not Qualified

1.2 mm

YES

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

TIN LEAD SILVER

BALL

1 mm

BOTTOM

10 mm

MT8VDDT3264AY-335G6 by Micron Technology

MT8VDDT3264AY-335G6

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 184; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

SINGLE BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

167 MHz

COMMON

R-XDMA-N184

e4

2147483648 bit

DDR DRAM MODULE

64

1

1

184

33554432 words

32M

SYNCHRONOUS

70 Cel

0 Cel

32MX64

3-STATE

UNSPECIFIED

DIMM

DIMM184

RECTANGULAR

MICROELECTRONIC ASSEMBLY

2.5

Not Qualified

8192

YES

.032 Amp

DRAMs

3280 mA

2.7 V

2.3 V

2.5

NO

CMOS

COMMERCIAL

GOLD

NO LEAD

1.27 mm

DUAL

MT18HTF12872PY-667D2 by Micron Technology

MT18HTF12872PY-667D2

Micron Technology

Micron Technology's MT18HTF12872PY-667D2 is a DDR DRAM MODULE with 128Mx72 organization, 9663676416-bit memory density, and operates at 1.8V. It features synchronous operation, self-refresh capability, and dual bank page burst access mode. Ideal for commercial applications requiring high-speed data processing in microelectronic assemblies.

DUAL BANK PAGE BURST

AUTO/SELF REFRESH

R-XDMA-N240

133.35 mm

9663676416 bit

DDR DRAM MODULE

72

1

1

240

134217728 words

128M

SYNCHRONOUS

70 Cel

0 Cel

128MX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

260

Not Qualified

30.15 mm

YES

1.9 V

1.7 V

1.8

NO

CMOS

COMMERCIAL

NO LEAD

DUAL

30

MT18VDDF12872HY-335F1 by Micron Technology

MT18VDDF12872HY-335F1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 200; Package Code: DIMM; Package Shape: RECTANGULAR; Maximum Supply Voltage (Vsup): 2.7 V;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH

R-XDMA-N200

e4

9663676416 bit

DDR DRAM MODULE

72

1

1

200

134217728 words

128M

SYNCHRONOUS

70 Cel

0 Cel

128MX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

260

Not Qualified

YES

2.7 V

2.3 V

2.5

NO

CMOS

COMMERCIAL

Gold (Au)

NO LEAD

DUAL

30

MT8HTF6464HDY-53EB3 by Micron Technology

MT8HTF6464HDY-53EB3

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 200; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

.5 ns

267 MHz

COMMON

R-PDMA-N200

4294967296 bit

DDR DRAM MODULE

64

200

67108864 words

64M

65 Cel

0 Cel

64MX64

3-STATE

PLASTIC/EPOXY

DIMM

DIMM200,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.8

Not Qualified

8192

.04 Amp

DRAMs

1680 mA

1.8

NO

CMOS

COMMERCIAL

NO LEAD

.6 mm

DUAL

MT16HTF12864HY-667B3 by Micron Technology

MT16HTF12864HY-667B3

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 200; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

.45 ns

333 MHz

COMMON

R-PDMA-N200

8589934592 bit

DDR DRAM MODULE

64

200

134217728 words

128M

65 Cel

0 Cel

128MX64

3-STATE

PLASTIC/EPOXY

DIMM

DIMM200,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.8

Not Qualified

8192

.08 Amp

DRAMs

3360 mA

1.8

NO

CMOS

COMMERCIAL

NO LEAD

.6 mm

DUAL