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MT18HTF12872PY-667D2

Micron Technology

MT18HTF12872PY-667D2 by Micron Technology

Micron Technology's MT18HTF12872PY-667D2 is a DDR DRAM MODULE with 128Mx72 organization, 9663676416-bit memory density, and operates at 1.8V. It features synchronous operation, self-refresh capability, and dual bank page burst access mode. Ideal for commercial applications requiring high-speed data processing in microelectronic assemblies.

Median Price

-

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 12,400 parts In-Stock

1+ parts

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12,400

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Vyrian

USA . 7,753 parts In-Stock

1+ parts

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7,753

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Digiode

USA . 1,878 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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1,878

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Nova Conductors

Japan . 70 parts In-Stock

1+ parts

-

100+ parts

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70

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Prism Electronics

USA . 2 parts In-Stock

1+ parts

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2

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 459 parts In-Stock

1+ parts

$5.000

100+ parts

-

1k+ parts

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10k+ parts

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459

$5.000

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AZTECH Wire

Italy . 185 parts In-Stock

1+ parts

$12.470

100+ parts

-

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185

$12.470

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Component Stockers USA

USA . 273 parts In-Stock

1+ parts

$99.990

100+ parts

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273

$99.990

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Corphita

USA . 1,585 parts In-Stock

1+ parts

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100+ parts

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1,585

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Aranea Global

USA . 50 parts In-Stock

1+ parts

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50

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Perfect Parts

USA . 25 parts In-Stock

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25

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Overview

Experience the superior quality and performance of Micron Technology with the MT18HTF12872PY-667D2. As a leading manufacturer in the industry, Micron delivers top-notch DRAM modules that are perfect for a wide range of applications. With its synchronous operating mode, self-refresh capability, and dual bank page burst access mode, this DDR DRAM module offers exceptional value and reliability. Trust in Micron Technology to provide you with the memory solutions you need for optimal performance and efficiency.

Feature Benefit Bullets

Package Shape: RECTANGULAR

Rectangular shape allows for efficient use of space and easy installation in various devices.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures faster data transfer and more efficient use of CPU cycles.

Self Refresh: YES

Self-refresh capability allows for energy savings and improved stability during standby mode.

Nominal Supply Voltage / Vsup (V): 1.8

Operates at a standard supply voltage of 1.8V, ensuring compatibility with a wide range of devices.

No. of Terminals: 240

High number of terminals allows for more connections and efficient data transfer between components.

Package Style (Meter): MICROELECTRONIC ASSEMBLY

Microelectronic assembly offers a compact form factor and high reliability for demanding applications.

Maximum Operating Temperature: 70 °C

High maximum operating temperature range ensures reliability in various environmental conditions.

Organization: 128MX72

Efficient organization of memory cells ensures high performance and data storage capacity.

Minimum Operating Temperature: 0 °C

Low minimum operating temperature allows for operation in cold environments without performance degradation.

Terminal Position: DUAL

Dual terminal position provides redundancy and improves electrical connections for stable data transfer.

Maximum Seated Height: 30.15 mm

Low seated height allows for installation in slim devices with space constraints.

Minimum Supply Voltage (Vsup): 1.7 V

Can operate at a minimum supply voltage of 1.7V, allowing for energy efficiency and extended battery life in portable devices.

Maximum Time At Peak Reflow Temperature (s): 30

Allows for efficient reflow soldering process with a short time at peak temperature, reducing manufacturing time and cost.

Peak Reflow Temperature °C: 260

Can withstand high peak reflow temperature of 260C during manufacturing process, ensuring reliable solder joints.

Length: 133.35 mm

Standard length allows for easy integration into various devices and systems.

Temperature Grade: COMMERCIAL

Commercial temperature grade ensures reliable operation in standard operating conditions.

Access Mode: DUAL BANK PAGE BURST

Dual bank page burst access mode allows for improved data transfer rates and performance.

Technology: CMOS

CMOS technology offers low power consumption and high speed operation for efficient memory performance.

Terminal Form: NO LEAD

Lead-free terminal form is environmentally friendly and complies with RoHS regulations.

No. of Words: 134217728 words

High number of words allows for large data storage capacity and efficient data processing.

Memory Width: 72

Wide memory width of 72 bits enables high-speed data transfer and efficient processing of data.

No. of Words Code: 128M

Efficient coding scheme allows for easy identification and management of memory cells.

Maximum Supply Voltage (Vsup): 1.9 V

Can handle maximum supply voltage of 1.9V, providing a safety margin for voltage fluctuations.

Memory Density: 9663676416 bit

High memory density of 9663676416 bits allows for large data storage capacity and efficient data processing.

Memory IC Type: DDR DRAM MODULE

DDR DRAM module offers high-speed data transfer rates and efficient memory performance for demanding applications.

Technical Specifications

DRAM MT18HTF12872PY-667D2 attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

DUAL BANK PAGE BURST

Additional Features:

AUTO/SELF REFRESH

JESD-30 Code:

R-XDMA-N240

Length:

133.35 mm

Memory Density:

9663676416 bit

Memory IC Type:

Memory Width:

72

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

240

No. of Words:

134217728 words

No. of Words Code:

128M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

128MX72

Package Body Material:

UNSPECIFIED

Package Code:

Package Shape:

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Seated Height:

30.15 mm

Self Refresh:

YES

Maximum Supply Voltage (Vsup):

1.9 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MT18HTF12872PY-667D2 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.36

SB

8542.32.00.23

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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